TWI261628B - Electronic component and method and apparatus for manufacturing the same - Google Patents
Electronic component and method and apparatus for manufacturing the same Download PDFInfo
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- TWI261628B TWI261628B TW092135539A TW92135539A TWI261628B TW I261628 B TWI261628 B TW I261628B TW 092135539 A TW092135539 A TW 092135539A TW 92135539 A TW92135539 A TW 92135539A TW I261628 B TWI261628 B TW I261628B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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Abstract
Description
1261628 五、發明說明（1) 一、 【發明所屬之技術領域】 本發明係有關電子零件 有關於在外部端子之表面上ς =古以钱;:I k表置，尤 接用ν電層之電子零件及其製造方法與製造裝置。連 二、 【習知技術】 、電容器、電阻 裝被使用於廣泛 係使用預先印刷 並於此安裝基板 作為外部端子的 連接於電路圖案 板時，為滿足電 電子零件的引線 法以形成以錫為 連接用導電層。 以電錢法形成的 連接用導電層之 構成錫-鉛之主 低熔點合金以降 由此可見， 則可輕易調整 有利，因此，在 電層，Sn-Pb合 藉由Κ (半導體積體電路）、電晶體 器、電感器等各種電子零件之利用，以組 領域之電子裝置。此等電子裝置的組裝’ 由導電層所構成的電路圖案之安穿基板， 上裝設預定的電子零件。具體而^，係將 f + $ # t H利用低溶點的焊料電性 的-部份。如此將電子零件安裝於安裝基 子零件與安裝基板間之連接可靠性，而於 之表面上，預先利用電鍍法等的表面處理 主要成分之錫系合金所構成且具低熔點之 於此，以往普遍採用之方法，係使用 Sn-Pb(錫-鉛）合金，來作為構成如上述之 低熔點金屬薄膜的材料。纟-方®，錫是 要^在一方面’斜是擔當與錫形成 低5金熔點，並提高連接強度的角色。1261628 V. INSTRUCTION DESCRIPTION (1) 1. Technical Field of the Invention The present invention relates to an electronic component relating to the surface of an external terminal, which is 古 古 古 ; ; ; ; ; ; ; ; ; ; ; ; ; ; : : : : : : : : : Electronic parts, methods of manufacturing the same, and manufacturing apparatus. Twenty-two, [conventional technology], capacitors, and resistors are used in a wide range of ways to connect to a circuit pattern board using pre-printed and mounted substrates as external terminals, to form a tin-based connection for electrical and electronic parts. Use a conductive layer. The main low-melting alloy of tin-lead formed by the connection conductive layer formed by the electric money method can be easily seen, so that it can be easily adjusted. Therefore, in the electric layer, Sn-Pb is combined with Κ (semiconductor integrated circuit). The use of various electronic components such as transistors, inductors, etc., in the field of electronic devices. The assembly of these electronic devices 'the circuit pattern of the conductive layer is mounted on the substrate, and predetermined electronic components are mounted thereon. Specifically, ^, f + $ # t H utilizes the low-solubility solder-parts. In this way, the electronic component is mounted on the reliability of the connection between the mounting base component and the mounting substrate, and the surface is preliminarily formed by a tin-based alloy which is mainly composed of a surface treatment such as a plating method and has a low melting point. In the method, a Sn-Pb (tin-lead) alloy is used as a material constituting the low-melting-point metal film as described above.纟-方®, tin is to be on the one hand 'slant is responsible for the role of forming a lower 5 gold melting point with tin and increasing the strength of the joint.
Sn-Pb合金可藉由改變兩成分之含有比 rmr堇T濕性佳，且在成本方面亦 女装電々件柃，作為如上述的連接用導 1261628 五、發明說明（2) 至已成為廣受务田 然而，：：：之合金 害的，當使用過合/中，由於Pb成分係對人體有 因此，從就環境破 ^要廢棄時便造成公害之原因， 來，將電子零件安、、，，而言係不理想的。於是近年 鑛法連接用導電層开;般製程中’係利用電 且具低溶點的金屬薄：由：：：錯之錫(Sn)系合金所構成 系合金而言，例如有苏加R •為連接用導電層。就此等Sn 金，並電鍍於引 :σ 1 (鉍）以替代鉛的Sn-Bi合 於此，叙（Bi )如ίΐ上而成之電子零件為公眾週知的。 形成低熔點合金，：二jS::合金所含的Pb ’用以與sn 當進行無鉛Sn系合金“二:金之；點降低的角色。又， 低熔點合金，務必“可：：種金屬作以與 糸合金電鍍之金屬。 化成不彳貝害其可濕性的Sn 此時，若利用電鍍法將由如上 Sn系合金所構成之連接用導電 於^鉛Sn-Bi合金之 面上，並使其長時間暴露 定零，之引線表 面的電鑛層有稱為％曰曰鬚（Whiske/件之下/則由引線表 生。此晶鬚特別於使用純錫電錢時較容」易^細金屬鬚產 無毅Sn-Bi合金可將少量之pb X生，如上述的 ；Γ/σ "Sn ^ ^ ^ ^ ^ 園以微小的間隔拉出複數條引線之J =IC般自封裝的周 擔心因晶鬚而造成引線之間短路。因：ί置而言，更須 弓丨線之表面上，以電鑛法形成 ：：電子零件的 …免之Sn系合金所構成的 1261628The Sn-Pb alloy can be improved in moisture content by changing the content ratio of the two components, and is also cost-effective, and is also used as the connection guide 1261628 as described above. 5. The invention (2) has become widely accepted. However, the use of the alloy is harmful to the use of the alloy. If the Pb component is used in the human body, the cause of the public hazard is caused by the environmental damage. ,, is not ideal. In recent years, the mineralization method has been connected with a conductive layer; in the general process, the metal is thin and has a low melting point: in the case of alloys composed of::: tin alloy (Sn) alloy, for example, Sujia R • Conductive layer for connection. In this case, Sn gold is electroplated on the lead: σ 1 (铋) to replace the lead Sn-Bi. The electronic parts made of the Bi (Bi) are known to the public. Forming a low-melting alloy,: Pb' contained in the two jS:: alloy is used with Sn as a lead-free Sn-based alloy. "Two: gold; the role of point reduction. Also, low-melting alloy, must be: ": metal Made of metal plated with bismuth alloy. In order to form a Sn which is not wettable with moisture, the surface of the Sn-Bi alloy which is made of the Sn-based alloy is electrically connected to the surface of the lead-Sn-Bi alloy by electroplating, and is exposed to zero for a long time. The electric ore layer on the surface of the lead is called % whisker (Whiske / under the piece / then by the lead. This whisker is especially suitable when using pure tin money) easy to fine metal must produce no sense Sn- Bi alloy can be a small amount of pb X, as described above; Γ / σ " Sn ^ ^ ^ ^ ^ Park at a small interval to pull out a plurality of leads J = IC-like self-encapsulation week concerns due to whiskers Short-circuit between the leads. Because: 置, the surface of the bow line must be formed by electro-minening method:: electronic parts...free 121628 made of Sn-based alloy
連接用導電層時，抑制晶鬚之發生成為一項課題。When the conductive layer is connected, it is a subject to suppress the occurrence of whiskers.
關於用以抑制上述晶鬚之發生而構成之電子零件，已 有人揭路了可變電阻器以及其製造方法（請參照專利文 '1 )。如圖7所示，上述可變電阻器為避免因晶鬚發生而 2 —對外部端子間互相導電，致造成其輸出信號之不穩 疋’其一對外部端子1 0 2與構成可變電阻器的中端子丨〇 1均 化成為如下狀態’即是於金屬製的板部丨〇 3 (被電鍍材） 的表面上’依序形成由⑸（銅）構成之第一電鍍層以 及由Sn構成之第二電鍍層1〇5，此第二電鍍層1〇5的以被熔 化而使電鍍粒子成被消滅之狀態。依據如此構造之可變電 阻為，由於第二電鍍層丨05中的電鍍粒子已被熔化而消 滅，即使長時間使用可變電阻器，也不會因各個電鍍粒子 形成氧化膜而導致體積之膨脹，而可抑制設於外端子丨〇2 表面之由Sn所構成之第二電鍍層105上發生晶鬚，可使可 變電阻器的輸出信號穩定。 /Regarding electronic components configured to suppress the occurrence of the above whiskers, a variable resistor and a method of manufacturing the same have been proposed (refer to Patent Document '1). As shown in FIG. 7, the above-mentioned variable resistor is for avoiding the occurrence of whiskers, and the other terminals are electrically connected to each other, causing the output signal to be unstable. A pair of external terminals 1 0 2 and a variable resistor are formed. The middle terminal 丨〇1 of the device is homogenized into the following state, that is, the first plating layer composed of (5) (copper) is sequentially formed on the surface of the metal plate portion 丨〇3 (electroplated material) and by Sn The second plating layer 1〇5 is formed, and the second plating layer 1〇5 is melted to cause the plating particles to be destroyed. According to the varistor thus constructed, since the plating particles in the second plating layer 丨05 have been melted and destroyed, even if the variable resistor is used for a long time, the volume expansion is not caused by the formation of an oxide film by each of the plating particles. On the other hand, it is possible to suppress the occurrence of whiskers on the second plating layer 105 composed of Sn provided on the surface of the external terminal 丨〇2, and the output signal of the variable resistor can be stabilized. /
又，依專利文獻1所揭露之可變電阻器的製造方法， 為使Sn熔化且消滅電鍍粒子，包含如下步驟，第一階段， 係準備一體设有中端子1 〇 1以及外端子1 〇 2的環帶，而後令 此環帶通過裝設有遠紅外線加熱器的第一加熱爐約3〇秒7 鐘，將中端子101以及外端子102預先加熱至大約相當於“ 之熔點232 °C的約2 20 °C為止。接著，第二階段係將環帶通 過裝設有燃燒器之第二加熱爐約1秒鐘，使中端子1〇1以及 外端子102加熱至大於Sn熔點的約9 0 0 t，藉此將設於中端 子1〇1以及外端子102表面上的第二電鍍層1〇5中之電鍍粒Further, according to the method for manufacturing a variable resistor disclosed in Patent Document 1, in order to melt Sn and destroy the plating particles, the following steps are included, and in the first stage, the intermediate terminal 1 〇1 and the external terminal 1 〇2 are integrally provided. The endless belt is then heated by the first heating furnace equipped with the far-infrared heater for about 3 seconds and 7 seconds, and the intermediate terminal 101 and the external terminal 102 are preheated to approximately "the melting point of 232 ° C. At about 2 20 ° C. Next, the second stage passes the endless belt through a second furnace equipped with a burner for about 1 second to heat the middle terminal 1〇1 and the outer terminal 102 to about 9 which is greater than the melting point of Sn. 0 0 t, thereby galvanizing the second plating layer 1〇5 provided on the middle terminal 1〇1 and the surface of the outer terminal 102
I261628 五、發明說明（4) 二=匕”接^，於第三階段，將*述環帶浸漬於裝有由Na 子ι4〇匕ίίί成的驗性溶液的槽裡，以去除形成於中端 一及外端子103表面之氧化膜。 電子：Γ也也有人揭露適用於抑制上述晶鬚發生而構成之 合金雷二i…、鉛以合金電鍍材（例如專利文獻2)。該如 C 一 2 Ϊ、1係以用於電子零件亦即端子或連接器的C η或 餘二ί 電鍍材，將含有〇.3~15質量百分比之Cu、剩 ’、、。卩分為Sn而構成的Sn_Cll合金層予以電鍍，並經過於 熔（reflow)處理（熔化處理）。在此，前述軟熔處理，人 將已電鍍有Sn-Cu合金電鍍層之前述Cu或以合金被電鍍’、 材在大氣中或還原環境中連續地置入於加熱爐中予以力口 熱，而使Sn-Cu合金層熔化。具有如此構造的Sn合金電鍍口 材，略同於專利文獻i，由於電鍍在被電鍍材上的Sn — Cu^ 金層熔化，所以能抑制晶鬚之發生。 〇 【專利文獻1】日本特開2002-246208號公報（第2〜3 項、圖1〜3 ) 【專利文獻2】日本特開20 0 2-6 9688號公報（第2〜3項 三、【發明内容】 發明所欲解決之問顳 依據專利文獻1或專利文獻2所揭露的習知電子零件之 製造方法，將電鍍在被電鍍材的“電鍍層或Sn-Cu合金電 鍍層在咼溫氣體中予以熔化，藉此抑制晶鬚之發生，但於I261628 V. INSTRUCTIONS (4) Two = 匕", in the third stage, the * ring is immersed in a tank containing an experimental solution of Na ι4 〇匕 ίίί to remove the formation An oxide film on the surface of the terminal and the external terminal 103. Electron: The alloy is also disclosed as an alloy plating material (for example, Patent Document 2) which is suitable for suppressing the occurrence of the above-mentioned whiskers (for example, Patent Document 2). 2 Ϊ, 1 is a C η or Yu Er 电镀 electroplating material for electronic parts, that is, terminals or connectors, and is composed of 33 to 15 mass% of Cu, remaining ', and 卩 is divided into Sn. The Sn_C11 alloy layer is electroplated and subjected to a reflow treatment (melting treatment). Here, in the reflow treatment, a person who has been plated with a Sn-Cu alloy plating layer or a metal is electroplated. In the atmosphere or in a reducing environment, it is continuously placed in a heating furnace to heat the Sn, and the Sn-Cu alloy layer is melted. The Sn alloy plating port having such a structure is slightly the same as in Patent Document i, since the plating is plated. The Sn—Cu^ gold layer on the material melts, so it can suppress the occurrence of whiskers. [Patent Document 1] JP-A-2002-246208 (Nos. 2 to 3, Figs. 1 to 3) [Patent Document 2] Japanese Patent Laid-Open No. 20 0 2-6 9688 (Items 2 to 3) SUMMARY OF THE INVENTION According to the method for manufacturing a conventional electronic component disclosed in Patent Document 1 or Patent Document 2, a plating layer or a Sn-Cu alloy plating layer is plated on a plated material. Melting in the gas, thereby suppressing the occurrence of whiskers, but
1261628 五、發明說明（5) 使各個電艘層炫化之加熱處理中/ 士土命 受到熱影響之虞的問題。 仍有使電子零件之内部 例如，專利文獻1所 i 如前述，在第一階段，使由、t^變電阻器之製造方法係 體成型之環帶，首先經過裳:^子10^以及外部端子102 — 秒鐘以預熱至約2 2 (Tc，而加熱器之第一加熱爐約3 0 裝設燃燒器之第二加熱爐約二階段，使此環帶經過 藉此將設於中端子1 〇i以及外:，予以加熱至約900 °c， 105中的電鍍粒子熔化。卜°卩钨子102表面之第二電鍍層 一般而言，對於由複雜 件進行熱處理時，需要注意此2構成而具複雜形狀之零 否上升過度，或有局部^達到的某特定部位之溫度是 過大的情形，故使時以裕等溫度分布變動 分布均勻。 7零件之表面、内部之溫度 依據專利文獻1，於裝吟έ Φ ^ ^ ^ ^ M S η ° 卜線加熱器之第一加熱爐 中：零件預熱至炼化溫度附近， 加熱期所發生之零件溫度分右 > 之隹弟 ·、、、版扪 、、西声Α99Π Μ古、w 度刀布之變動為最小，但由於預熱 /JHL 為Ζ 2 0 C的而溫，泛"/ίη為α士日日r= 且加熱時間長達約3 0秒鐘等緣故， ^ ^ ^ + 电艰增逹到均句之溫度分布的同時，由於 熱傳導使零件内部之溫声^7 μ & 展也上升，故無法避免於零件内部 產生熱應力。 又，於專利文獻2所揭露的sn合金電鍍材之製造方法 中，係如前述，將電鍍有Sn —Cu合金層的Cu或以合金被電 鍍材，在大氣或還原環境中連續放入於加熱爐内予以加1261628 V. INSTRUCTIONS (5) The problem of heat treatment in the heat treatment of each electric ship layer. There is still an internal part of the electronic component. For example, in the first stage, in the first stage, the ring belt formed by the manufacturing method of the t^variable resistor is first passed through the skirt: Terminal 102 - second to preheat to about 2 2 (Tc, and the first furnace of the heater is about 30. The second furnace of the burner is installed in about two stages, so that the belt is passed through Terminal 1 〇i and outside:, heated to about 900 °c, the plating particles in 105 are melted. The second plating layer on the surface of the tungsten 102 is generally required for the heat treatment of complex parts. 2 If the zero of the complex shape is excessively increased, or the temperature of a certain part reached by the local ^ is too large, the temperature distribution of the part is uniform and uniform. 7 The surface and internal temperature of the part are based on the patent. Document 1, in the first heating furnace of Φ ^ ^ ^ ^ MS η ° line heater: the parts are preheated to the vicinity of the refining temperature, and the temperature of the parts occurring during the heating period is divided into right > ,,,,,,,,,,,,,,,,,,,,,,,,, The change is minimal, but because the preheating/JHL is Ζ 2 0 C, the temperature is "/ίη is α士日日 r= and the heating time is up to about 30 seconds, etc. ^ ^ ^ + When the temperature distribution of the average sentence is increased, the temperature of the inside of the part is also increased due to heat conduction, so that thermal stress is not generated inside the part. Further, the Sn alloy plating disclosed in Patent Document 2 In the method for producing a material, as described above, Cu or an alloy plated with a Sn—Cu alloy layer is continuously placed in a heating furnace in an atmosphere or a reducing environment.
第10頁 1261628 五、發明說明（6) 熱，使Sn-Cu合金電鑛層炫化，故與專利文獻1 地，此等加熱處理係將被電鍍材暴露在氣體環 行的。因此，如同於專利文獻1所說明之理由， 有使被電鍍材的内部受到熱影響之虞。 在將上述專利文獻1或專利文獻2所揭露的 應用於廣被使用作為電子零件之樹脂封裝型半 製造方法的情形時，由於用以將Sn系合金電鍍 熱處理所產生之熱，容易從引線達到被樹脂製 封的半導體裝置之内部，故會造成例如半導體 框架以及密封樹脂等之内部構造物間之剝離現 隨著封裝内部所含成分之氣化而使體積急速膨 大的應力發生作用，致使半導體裝置之可靠度 害。 本發明係鑑於上述情形而完成的，而本發 提供一種電子零件以及其製造方法與製造裝置 晶鬚之發生，而於連接用導電層熔化時，避免 令電子零件的内部受到熱的影響，其中，前述 形成於外部端子之表面上的無鉛Sn系合金電鍍 的。 解決問題之方式 為達成上述之目的，本案的第一發明係有 零件的製造方法，其於外部端子的表面上形成 成分之連接用導電層，此製造方法包含：電鍍 外部端子表面形成無鉛之錫系合金的電鍍層； 的情形同樣 境之下所進 加熱處理 加熱處理， 導體裝置之 層熔化之加 的封裝所密 晶片、引線 象，或因為 服等而有頗 明顯受損 明的目的在 ’其為抑制 因加熱處理 導電層係由 層所構成 關一種電子 以S η為主要 步驟，於該 加熱步驟，Page 10 1261628 V. INSTRUCTION DESCRIPTION (6) Heat causes the Sn-Cu alloy electric ore layer to be dazzled. Therefore, in the case of Patent Document 1, these heat treatments expose the plated material to gas circulation. Therefore, as described in Patent Document 1, there is a possibility that the inside of the material to be plated is subjected to heat. In the case where the above-mentioned Patent Document 1 or Patent Document 2 is applied to a resin-encapsulated semi-fabrication method widely used as an electronic component, it is easy to obtain from the lead due to heat generated by heat treatment of the Sn-based alloy plating. In the inside of a semiconductor device sealed with a resin, for example, peeling between internal structures such as a semiconductor frame and a sealing resin causes a rapid expansion of the volume due to vaporization of components contained in the package, resulting in a semiconductor The reliability of the device. The present invention has been made in view of the above circumstances, and the present invention provides an electronic component, a manufacturing method thereof, and a whisker of a manufacturing apparatus, and when the conductive layer for connection is melted, the inside of the electronic component is prevented from being affected by heat, wherein The lead-free Sn-based alloy formed on the surface of the external terminal is plated. Solution to Problem In order to achieve the above object, the first invention of the present invention relates to a method of manufacturing a component for forming a conductive layer for connection on a surface of an external terminal, the manufacturing method comprising: plating a surface of an external terminal to form a lead-free tin The plating layer of the alloy; in the same situation, the heating treatment is carried out under the same conditions, the layer of the conductor device is melted, the packaged wafer, the lead image, or the object is obviously damaged due to the service, etc. In order to suppress the heat treatment of the conductive layer, the layer consists of a layer of electrons with S η as a main step, in the heating step,
第11頁 1261628 五、發明說明（7) 於加熱至該錫 學液中，將前 系合金電鍍層 其熱容量大於 時間縮短，故 果。 又，本發 法，在其外部 電層，前述製 成樹脂製之封 步驟，於該外 形成無鉛之錫 系合金電鍵層 前述錫系合金 化。藉此，能 又，本案 零件之製造方 氟化系非活性 之下將前述氟 係恰好可將無 層有效溶化， 效果。又，本案 子零件之製造 系合金電鍍 述錫系合金 溶化。如此 氣體的液體 能獲得防止 明之第二發 端子之表面 造方法更包 裝，用以覆 部端子的表 系合金電鍍 之熔點以上 電鍍層浸潰 獲得與本發 之第三發明 法，其中， 化學液之沸 化系非活性 鉛之錫系合 且可獲得防 之第四發明 方法，於前 之熔點以上 電鍍層浸潰 ，將上述錫 中，藉此能 熱影響及到 明係有關一 形成以Sn為 含如下步驟 蓋前述外部 面上之未被 層；加熱步 的液態氟系 ，藉此使前 明之第一發明相 ，係有關第 於前述加熱 點的範圍内 化學液予以 金熔化之溫 止熱影響波 ，係有關於 述加熱步驟 的液態氟系非活性化 於此内，藉此使該錫 系合金電鑛層浸潰於 使熔化電鍍層所需的 電子零件之内部的效 種電子零件的 主要成分的連 :封裝形成步 端子的一部份 該封裝所覆蓋 驟，於加熱至 非活性化學液 述錫系合金電 同之效果 一或第二發明 步驟裡，在低 ，即是再2 0 0〜 加熱。此溫度 度，故能使上 及到電子零件 製造方 接用導 驟，形 ;電鍍 的部分 前述錫 中，將 鐘層熔 〇 的電子 於前述 28 0 °C 範圍， 述電鍍 内部之 本案之第三發明的電 裡，將上述錫系合金Page 11 1261628 V. INSTRUCTIONS (7) In the heating of the tin bath, the thermal capacity of the precursor alloy plating layer is shortened by time, so. Further, in the present method, in the external electric layer, the resin-sealing step is performed, and the lead-free tin-based alloy electric-switch layer is formed to form the tin-based alloy. As a result, in the production of the parts of the present invention, the fluorine-based system is inactive, and the fluorine-based layer can be effectively dissolved without effect. Further, in the production of the case, the alloy plating is performed by melting the tin-based alloy. The liquid of such a gas can be obtained by a method for preventing the surface of the second terminal of the invention from being packaged, and the third embodiment of the present invention is obtained by the impregnation of the plating layer above the melting point of the surface alloy plating of the covering terminal, wherein the chemical liquid The boiling method is an inactive lead tin and can be prevented by the fourth invention method, and the plating layer is impregnated above the melting point of the former, and the tin is used to thereby thermally influence and form a related In order to cover the outer surface of the uncovered layer on the outer surface; the liquid fluorine system in the heating step, thereby making the first invention phase of the prior art, the temperature of the chemical liquid to be melted in the range of the heating point Influencing the wave, the liquid fluorine-based inactivation of the heating step is performed, thereby immersing the tin-based alloy electric ore layer in the effect of the electronic component of the electronic component required for melting the plating layer. The main component of the package: the part of the package forming the step terminal covered by the package, in the process of heating to the inactive chemical liquid, the tin alloy is the same effect or the second invention step Low, i.e. 20, then 0~ heating. This temperature degree can be used to connect the lead to the electronic component manufacturer. The electroplated part of the tin, the electrons of the clock layer are melted in the above-mentioned range of 28 ° ° C. In the third invention of the electric, the above tin alloy
第12頁 1261628 發明說明（8) 電鍍層予以〇 2〜 錫系合金電❹/童的加Λ。在此時間範圍内，將上述 系非活性化學‘ Ϊ入於本案第三發明中所規定之溫度的氟 分地熔化，且予以浸潰，則能將前述錫系合金電鍍層充 又，本案可，防止熱影響波及到電子零件内部。 電子零件之Ϊ五發明，係有關利用本案之第一發明的 合金電鍍層if了f所製造的電子零件，其中，前述锡系 又，二案=制晶鬚發生之結晶構造。 件之製造方法= 發明，係有關本案第二發明的電子零 鍍層具有可抑㈣：：的電子零件’其中，前述錫系合金電 又，本案2 發生之結晶結構。 電子零件，S中 七1明’係有關本案第五或第六發明的 sn形成低熔點人*上述錫系合金電鍍層，係於Sn中添加與 又，本案的所需金屬，並具有所需膜厚。 件，盆中，、+、第八發明’係有關本案第七發明之電子零 二，本G所需金屬，係包含Bi。 置，在其外部九發明，係有關一種電子零件製造裝 用導電層，包含·之表面上形成有以Sn為主要成分的連接 之無鉛之錫系1八加熱部，將形成在前述外部端子表面上 造，係於加埶样内J鍍層予以熔化，其中，此加熱部之構 化學液被加熱二ί滿氟系非活性化學液，此I系非活性 氟系非活性化風=I该錫系合金電鍍層之熔點，並且於該 使該錫系合金^=將該锡系合金電鑛層予以浸潰，藉此 置以製造電子定杜9熔化利用本發明之電子零件製造装 電子零件，藉此能得與本案的第—發明相^之妹 1261628 五、發明說明（9) 果〇 四 【貫施方式】 以下將參昭 圖1及圖2 ^圖式詳細說明依本發明的較佳實施形態。 施型態的電子定製程圖，依製程順序顯示本發明之一實 電子零件製造二件製造方法之製程。圖3係顯示依據前述 中沿著A-A箭頭决所製造的電子零件之立體圖。圖4係圖3 件之製造方法的的剖面圖，圖5係顯示用以實施前述電子零 依製程順序說明二造裝置之構造。以下，參照圖1及圖2， 中，電子零件作別述電子零件之製造方法。在此實施型態 首先，如圖；^脂封裝型半導體裝置為例加以說明。 如F e - N i (鐵/鋅）^ )所示，準備引線框架3，其係由例 有薄片1及於薄/片】δ金等所構成，且在其中央部一體形成 由例如Si (石夕）所^ f圍部之複數條引線2 °接¥，準備 形成有由例如A1 的半導體晶片5，於其表面上預先 其背面利用導電性@=形成的複數個焊墊電極4，並將 接著，如圖！ (A與薄片1連接以進行晶片接合。 與此相對應的半導體曰不在引線框架3的引線2之端部 (金）所形成之連；:;6片5的：塾電極4之間，連接如由Au 接著，如圖m’—以進于連接線接合。 入如環氧樹脂等之樹脂周知的轉送模製法，注 引線2之端部、半導體θ =泠=7，用以將引線框架3的 接著，如圖密封。 斤不於未破封裝7所包圍的引線2 1261628 五、發明說明（10) ' --——" 之表面上，利用電鍍法等表面處理法以形成Sn〜Bi合金所 構成之連接用導電層8。於此，如前述，如同在以往廣泛 被使用之Sn-Pb合金所含的pb，β丨能與Sn形成低熔點合 金，並擔當降低合金之熔點的角色。連接用導電層8，係 例如在Sn中添加〇. 5〜6· 〇wt ( weight ) %的Bi，而且有 =〜20 的電鍍膜厚。接著，將引線框架3切斷以分離成 各個封裝7，用以製造電子零件9。 形忐^: ’如圖2 ( 6 )所*，為抑制晶鬚之發生，將構成 金^=子零件9的引線2表面的連接用導電層8之Sn-Bi合 層8變又成Λ以加熱處理以炫化之°結《，前述連接用導電 具有可女熔化的連接用導電層8Α，此連接用導電層8Α則 熱處：：制晶鬚發生之結晶組織（結晶構造）。上述之加 如ΡΙ ^系利用圖5所示的電子零件製造裝置1 0所進行。 成：圖5所示，電子零件製造裝置1〇，由如下各部份構 之水平2邛1 4，其沿著裝置本體11的裝載部1 2向卸載部1 3 電子零向X丄搬送作為被處理體的電子零件9，其中，於 連接用導的刖述引線2之表面上形成有由Bi合金所構成的 1 6，於此骑層8 ,預熱部丨5，將引線2予以預熱；加熱部 系非活性彳I!線2浸潰在加熱至Sn〜Bi合金的熔點以上之氟 性化學液ί液中；回收部17，回收附著於引線2的非活 乾。於此，j洗邛18，沖洗引線2 ;烘乾部19，將引線2烘 兩個沖洗^冲洗部1 8具有第1沖洗部1 8Α與第2沖洗部1 8Β的 便使Sn、B ·卩人為達成本發明之目的，將引線2予以預熱以 1 口金所形成的連接用導電層8熔化，而將引線2Page 12 1261628 Description of the invention (8) The plating layer is 〇 2~ tin-based alloy electric ❹ / child's twist. In this time range, the fluorine in the above-mentioned inactive chemical's temperature incorporated in the third invention of the present invention is melted and impregnated, and the tin-based alloy plating layer can be charged again. To prevent the heat from affecting the inside of the electronic parts. The fifth invention of the electronic component relates to an electronic component manufactured by using the alloy plating layer of the first invention of the present invention, wherein the tin system and the second case are crystal structures in which whiskers are generated. Manufacture method of the article = invention, the electronic zero-coating layer according to the second invention of the present invention has an electronic component which can suppress (4):: wherein the tin-based alloy is electrically, and the crystal structure of the present invention 2 occurs. The electronic component, S in the seven 1 Ming's related to the fifth or sixth invention of the present invention, the Sn forms a low melting point person * the tin-based alloy plating layer, which is added to the Sn, and the required metal of the case, and has the required Film thickness. The article, the basin, the +, the eighth invention is an electronic component related to the seventh invention of the present invention, and the metal required for the G is Bi. In addition, the invention relates to a conductive layer for manufacturing an electronic component, and a lead-free tin-based heating portion having a Sn-based connection formed on the surface thereof is formed on the surface of the external terminal. The upper layer is melted by the J plating layer in the sample, wherein the chemical liquid of the heating portion is heated by the two-flux-inactive chemical liquid, and the I-based inactive fluorine-based inactive wind = I. a melting point of the alloy plating layer, and the tin-based alloy is used to impregnate the tin-based alloy electric ore layer, thereby forming an electronic component manufacturing electronic component using the electronic component of the present invention. Therefore, it is possible to obtain the first invention of the present invention. The sister of the invention is 1261628. 5. The invention description (9) The fourth embodiment of the invention. The following is a detailed description of the invention according to FIG. 1 and FIG. Implementation form. The electronic custom process diagram of the embodiment mode shows the manufacturing process of the two-piece manufacturing method of the actual electronic component of the present invention in the order of the process. Fig. 3 is a perspective view showing an electronic component manufactured in accordance with the aforementioned A-A arrow. Fig. 4 is a cross-sectional view showing the manufacturing method of Fig. 3, and Fig. 5 is a view showing the configuration for explaining the second manufacturing apparatus for carrying out the above-described electronic zero-by-process sequence. Hereinafter, referring to FIG. 1 and FIG. 2, an electronic component is described as a method of manufacturing an electronic component. In this embodiment, first, a semiconductor package type semiconductor device will be described as an example. As shown by F e - N i (iron/zinc) ^), the lead frame 3 is prepared by, for example, a sheet 1 and a thin sheet/strip δ gold, and is integrally formed of, for example, Si at a central portion thereof. (Shi Xi), a plurality of leads of the periphery of the ^ f are connected to each other, and a plurality of pad electrodes 4 formed of a semiconductor wafer 5 made of, for example, A1 on the surface thereof and having a front surface of the front surface thereof by conductivity @= are prepared. And then, as shown! (A is connected to the sheet 1 for wafer bonding. The semiconductor yoke corresponding thereto is not formed by the end portion (gold) of the lead 2 of the lead frame 3;: 6 sheets 5: between the 塾 electrodes 4, connected If it is followed by Au, as shown in Fig. m', it is bonded to the connecting wire. Into a resin transfer method such as epoxy resin, the end portion of the lead wire 2, the semiconductor θ = 泠 = 7, for the lead frame 3, next, as shown in the figure. Jin is not in the unbroken package 7 surrounded by the lead 2 1261628 5, the invention description (10) '--" on the surface, using surface treatment such as electroplating to form Sn~ As described above, the connection conductive layer 8 composed of a Bi alloy is as described above, and as in the conventionally used Sn-Pb alloy, pb, β丨 can form a low melting point alloy with Sn, and serves to lower the melting point of the alloy. The role of the conductive layer 8 for connection is, for example, adding 〇. 5~6· 〇wt (weight) % of Bi to the Sn, and having a plating film thickness of 〜20. Then, the lead frame 3 is cut to be separated into Each package 7 is used to manufacture electronic parts 9. Shape 忐^: 'As shown in Fig. 2 (6)*, to suppress whiskers Occurs, the Sn-Bi layer 8 of the connection conductive layer 8 constituting the surface of the lead 2 of the gold component is replaced by a heat treatment to brighten the junction. The connection is made of a conductive layer 8Α, and the connection is made of a conductive layer 8Α, where the heat is: a crystal structure (crystal structure) in which whisker is generated. The above-mentioned addition is based on the electronic component manufacturing apparatus 10 shown in FIG. As shown in Fig. 5, the electronic component manufacturing apparatus 1 is composed of the following parts: the horizontal portion 2邛1 4, which is along the loading portion 1 2 of the apparatus body 11 to the unloading portion 1 3 electron zero direction X丄The electronic component 9 as the object to be processed is transported, and on the surface of the lead-through lead 2 for connection, a bridge made of a Bi alloy is formed, and the riding layer 8 and the preheating portion ,5 are used. Preheating is performed; the heating portion is inactive 彳I! line 2 is immersed in a fluorinated chemical liquid 395 which is heated to a melting point or higher of the Sn~Bi alloy; and the recovery portion 17 recovers the non-living adhered to the lead 2. Here, j washes 18, rinses the lead 2; the drying section 19, and the lead 2 is baked twice; the rinse part 1 8 has the first rinse part 1 8 Α and the second rinsing portion 1 8 使 使 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线
第15頁 1261628 五、發明說明（11) 浸潰於氟系非活性化與^、、 線2之氟系非活性化學液，铁力熱，接著回收附著在引 考慮實際上的製程簡 …、"ί :弓丨線2烘乾即可。作是， 熱，接著將電子零為將電子零件9予以預 加熱，再回收附著於電文子貝裳^氟系非活性化學液中並予以 後將電子零件9烘乾亦可。%牛9之氟系非活性化學液，而 進行之此等處理，言兒明本對電子零件9所 搬送部“包含：搬送執道20λ 二 移動；伸縮臂21 ’由搬送軌道2〇所:::χ間斷地 Υ伸縮自如；以及收納籃22，裝設於牙化者垂直方向 作為被處理體之複數個電子零件9。收;;ί ’用以收納 如不錄鋼等具優越耐蝕性之 、、’監22，係利用利 身的熱容量達於“，並提高其对；性 …鋼片加以組合而構成簡單的形狀：：二= 22裝设止.動部（未圖不），以防所收納之 …動。此外，為提高電子零件9之收 '件：： 籃22具有多段構造為較佳。 裝設預熱部15之目的’係在將電子零件9予以加熱處 理之際，防止因急速且大量浸潰冰冷之零件於加熱部i 6 中，使氟系非活性化學液的溫度降低，而造成連續生產性 之降低，同時為滅輕因電子零件9的溫度急速上升所造成 之應力。將預熱部1 5之加熱溫度設定於相較於加熱部1 6的 加熱溫度（如後述，22〇〜280 °C )為低的1〇〇〜18〇。〇，並在 如大氣中或N2般之非活性環境中將電子零件9予以預熱。Page 15 1261628 V. INSTRUCTIONS (11) Impregnated with fluorine-based inactive chemical and fluorine-based inactive chemical liquids of ^, and 2, iron heat, and then recovered and adhered to the actual process. "ί : Bow line 2 can be dried. For example, heat, then electronic zero is used to preheat the electronic component 9, and then recovered and attached to the electronic message, the fluorine-based inactive chemical liquid, and then the electronic component 9 can be dried. In the case where the fluorine-based inactive chemical liquid of Niu 9 is subjected to such treatment, it is said that the transfer unit of the electronic component 9 includes: the transfer of the road 20λ is moved; the telescopic arm 21 is transported by the transfer rail 2: χ χ χ ; ; ; ; ; ; ; ; ; ; ; ; ; 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳 收纳, "Supervisor 22, the use of the body's heat capacity up to ", and improve its pair; sex ... steel sheets combined to form a simple shape:: 2 = 22 installation stop. Moving parts (not shown), In order to prevent the storage of ... move. Further, in order to improve the receipt of the electronic component 9, the basket 22 has a multi-segment configuration. The purpose of installing the preheating unit 15 is to prevent the temperature of the fluorine-based inactive chemical liquid from being lowered by rapidly immersing the ice-cooled parts in the heating unit i 6 while the electronic component 9 is being heat-treated. This results in a decrease in continuous productivity and at the same time a stress caused by a rapid rise in temperature of the electronic component 9. The heating temperature of the preheating unit 15 is set to be lower than the heating temperature of the heating unit 16 (22 〇 to 280 ° C as will be described later). 〇, and preheat the electronic component 9 in an inert environment such as the atmosphere or N2.
第16頁 1261628Page 16 1261628
裝設加熱部1 6之目的，係在於使構成形成於電子零件 9的引線2表面上的連接用導電層8之Sn-Bi合金電鍍層炼 化，使用如Gal den (伊AUS I MONT公司商品名）的氟系非 活性化學液以裝滿加熱槽丨6 a，並在將電子零件9浸潰於此 氟系非活性化學液的狀態之下，將氟系非活性化學液加熱 至高於前述Sn-Bi合金電鍍層之熔點的22〇〜28〇它為止。^ 時，氟系非活性化學液的溫度愈高，愈可在短時間内處 理，但須將其溫度設定在不超越氟系非活性化學液的 之範圍内。 ^ 回收部1 7，係用以回收附著於電子零件9的前述氟系 非活性化學液，使用將氟系非活性化學液熔化之有機溶劑 將回收槽1 7a裝滿，並將完成加熱處理之電子零件9浸潰於 此有機溶劑中。有機溶劑須設定於常溫或前述加熱溫度以 下，而回收氟系非活性化學液。 第1沖洗部18A以及第2沖洗部18B，係用以沖洗完成加 ，處理後之電子零件9，使用加熱過之界面活化劑或純水 ，之沖洗液以將各個沖洗槽18a、18b裝滿，並將完成加埶 處理之電子零件9浸潰在此沖洗液中，將電子零件9沖洗.而 去除附著於其表面的各種附著物。 ^烘乾部1 9，係用以將完成沖洗處理的電子零件9烘 2，將加熱至約1 5 0。。的N2氣體或乾空氣供應於烘乾爐i 9a ^ ’並將完成沖洗處理之電子零件9暴露在此乾燥環境 中’使附著於其表面上之沖洗液蒸發以完成乾燥。 接著，說明如何使用圖5所示的電子零件製造裝置The purpose of mounting the heating portion 16 is to refine the Sn-Bi alloy plating layer constituting the connection conductive layer 8 formed on the surface of the lead 2 of the electronic component 9, and use, for example, Gal den (I-AUS I MONT Co., Ltd. product The fluorine-based inactive chemical liquid is filled with the heating tank 丨 6 a, and the fluorine-based inactive chemical liquid is heated to a temperature higher than the above in a state where the electronic component 9 is immersed in the fluorine-based inactive chemical liquid. The melting point of the Sn-Bi alloy plating layer is 22 〇 28 〇 28 〇. ^ The higher the temperature of the fluorine-based inactive chemical liquid, the more it can be treated in a short period of time, but the temperature must be set within a range not exceeding the fluorine-based inactive chemical liquid. ^ The recovery unit 17 is for recovering the fluorine-based inactive chemical liquid adhering to the electronic component 9, and filling the recovery tank 17a with an organic solvent that melts the fluorine-based inactive chemical liquid, and completing the heat treatment The electronic component 9 is impregnated in this organic solvent. The organic solvent must be set to a normal temperature or a heating temperature as described above to recover a fluorine-based inactive chemical liquid. The first rinsing portion 18A and the second rinsing portion 18B are used for rinsing the processed and processed electronic component 9 and using the heated interface activator or pure water to fill the respective rinsing tanks 18a and 18b. And the electronic component 9 which has been subjected to the twisting treatment is immersed in the rinsing liquid, and the electronic component 9 is rinsed to remove various adhering substances attached to the surface thereof. The drying section 197 is used to bake the electronic component 9 which has been subjected to the rinsing process, and is heated to about 1500. . The N2 gas or dry air is supplied to the drying oven i 9a ^ ' and the finished rinsing electronic component 9 is exposed to the dry environment. The rinsing liquid adhering to the surface is evaporated to complete the drying. Next, an explanation will be given of how to use the electronic component manufacturing apparatus shown in FIG.
Ϊ261628 五、發明說明i 一 - ^心針對構成形成於電子零件9的引線2表面上之連接用導 曰的Sn-Bi合金電鍍層進行加熱處理並熔化之方法。 子堂Γ先’⑯在圖2 (d)的製程所製造的收納有複數個電 :件9之收納籃22裝設於圖5所示之電子零件製造裝㈣ X轉#Γ部+14之伸縮臂^丨處’使其搬送軌道20沿著水平方向 ,,，藉此將收納籃22自裝載部1 2搬送至裝置本體11内 荟，，部15。當裝設前述收納藍22時，使伸縮臂21處於沿 之狀態。然後，在預熱部15,於大氣μ 埶。/ %丨兄中，將電子零件Θ在100〜180 °c之下予以預 —接著，使搬送軌道2 0沿著水平方向χ移動，藉此將伸 縮臂21搬送至加熱部16之後，使伸縮臂仏沿著垂直方向γ 伸長，以將收納籃22於裝滿加熱槽16a内，且加熱至 2 2 0〜2 8 0 °C的氟系非活性化學液中浸潰〇· 2〜5秒鐘，將電子 零件9予以加熱。將此浸潰時間設定為使電鍍層熔化所需 的最短時間，並於完成熔化之後立即自氟系非活性化學液 中將電子零件9撈起。於此，在浸潰收納籃2 2之前，事先 將氟系非活性化學液予以加熱至前述溫度。 一如此，將電子零件9浸潰於氟系非活性化學液中而進 行加熱處理，相較於如下所述之方法其效率較好，且可予 以均勻加熱。意即，在如空氣爐等之高溫氣體中所進行之 加熱中，由於氣體的單位體積熱量為小，為將一定熱量供 應於零件，則需要大體積的加熱空氣，故氣體到零件表面 之熱傳導率較液體中為差。接著，利用遠紅外線的放射等Ϊ261628 V. The invention is a method of heat-treating and melting a Sn-Bi alloy plating layer constituting a connection guide formed on the surface of the lead 2 of the electronic component 9. The sub-menu '16' is manufactured in the process of Fig. 2 (d), and the storage basket 22 containing a plurality of electric components: the electric component manufacturing device (4) X-turn #Γ部+14 The telescopic arm is configured to carry the transport rail 20 in the horizontal direction, thereby transporting the storage basket 22 from the loading unit 12 to the inner portion of the apparatus body 11. When the accommodation blue 22 is installed, the telescopic arm 21 is placed in a state of being along. Then, in the preheating section 15, the atmosphere is μ. In the % brother, the electronic component is pre-staged at 100 to 180 ° C. Then, the transport rail 20 is moved in the horizontal direction, whereby the telescopic arm 21 is transported to the heating portion 16 to be stretched. The arm 伸长 is elongated in the vertical direction γ to immerse the storage basket 22 in the fluorine-based inactive chemical liquid filled in the heating tank 16a and heated to 2 2 0 to 2 80 ° C for 2 to 5 seconds. The clock is used to heat the electronic component 9. This immersion time is set to the shortest time required to melt the plating layer, and the electronic component 9 is picked up from the fluorine-based inactive chemical liquid immediately after the completion of the melting. Here, the fluorine-based inactive chemical liquid is previously heated to the above temperature before the storage basket 2 2 is impregnated. In this manner, the electronic component 9 is immersed in a fluorine-based inactive chemical liquid and heat-treated, and the efficiency is better than that of the method described below, and uniform heating can be performed. That is, in the heating performed in a high-temperature gas such as an air furnace, since the heat per unit volume of the gas is small, in order to supply a certain amount of heat to the parts, a large volume of heated air is required, so the heat conduction from the gas to the surface of the part is required. The rate is worse than in liquids. Next, using radiation of far infrared rays, etc.
第18頁 1261628 五、發明說明（14) 以加熱，非常難以將具複雜形狀的外部端子之表面予以均 勻的加熱。另一面，若將電子零件浸潰在具有大埶容量之 加熱用液體中，則能將零件之表面均勻且在短時間内予以 加熱。由於短時間内予以加熱，能使自零件表面至封裝内 部之熱傳導為最小’同時僅針對形成於引線2表面之原來 tSn — Bl合金電鍍層予以集中加熱，故能缓和對於封裝之 應力。 ^ 接f，將伸縮臂21沿著垂直方向γ收縮後，將搬送執 ^沿著水平方向X移動，藉此使伸縮臂2 1搬送至回收部 、主，而後將伸縮臂21沿著垂直方向γ伸長，使收納籃22浸 >貝，回收槽17a裡的有機溶劑中，並回收包括引線2表面的 附著於電子零件9之氟系非活性化學液。 ，^ ’將伸縮臂2 1沿著垂直方向Y收縮後，將搬送執 ^ 2 〇石著水平方向X移動，藉此使伸縮臂2丨搬送至第1沖洗 \而後將伸縮臂21沿著垂直方向γ伸長，使收納籃22 貝在冲洗槽1 8 a之沖洗液中，以沖洗電子零件9並去除附 者於其表面上的各種附著物。 ^ 接著’將伸縮臂2 1沿著垂直方向Y收縮後，將搬送執 ^2 0沿著水平方向χ移動，藉此使伸縮臂2丨搬送至第2沖洗 ’而後將伸縮臂21沿著垂直方向γ伸長，使收納籃22 ’又/貝在沖洗槽1 8 a之沖洗液中，以沖洗電子零件9並完全去 除附著於其表面上的各種附著物。 ^ 接著，將伸縮臂2 1沿著垂直方向γ收縮後，將搬送軌 0沿著水平方向χ移動，藉此使伸縮臂2丨搬送至烘乾部Page 18 1261628 V. INSTRUCTIONS (14) With heating, it is very difficult to uniformly heat the surface of an external terminal having a complicated shape. On the other hand, if the electronic component is immersed in a heating liquid having a large volume, the surface of the component can be heated uniformly in a short time. Since the heating is performed in a short period of time, the heat conduction from the surface of the component to the inside of the package can be minimized. At the same time, only the original tSn-Bl alloy plating layer formed on the surface of the lead 2 is collectively heated, so that the stress on the package can be alleviated. ^ After f, the telescopic arm 21 is contracted in the vertical direction γ, and then the transporting arm is moved in the horizontal direction X, whereby the telescopic arm 2 1 is transported to the collecting portion and the main body, and then the telescopic arm 21 is vertically oriented. γ is elongated, and the storage basket 22 is immersed in the organic solvent in the recovery tank 17a, and the fluorine-based inactive chemical liquid adhering to the electronic component 9 including the surface of the lead 2 is recovered. , ^ ' After the telescopic arm 2 1 is contracted in the vertical direction Y, the transporting movement 2 is moved in the horizontal direction X, whereby the telescopic arm 2 is transported to the first flushing, and then the telescopic arm 21 is vertically moved. The direction γ is elongated, so that the storage basket 22 is in the rinsing liquid of the rinsing tank 18 a to wash the electronic parts 9 and remove various attachments attached to the surface thereof. ^ Then, after the telescopic arm 2 1 is contracted in the vertical direction Y, the transporting handle 2 is moved in the horizontal direction, whereby the telescopic arm 2 is transported to the second flushing', and then the telescopic arm 21 is vertically moved. The direction γ is elongated, so that the storage basket 22' is again/in the rinsing liquid of the rinsing tank 18a to rinse the electronic parts 9 and completely remove various attachments adhering to the surface thereof. ^ Next, after the telescopic arm 2 1 is contracted in the vertical direction γ, the transport rail 0 is moved in the horizontal direction, whereby the telescopic arm 2 is transported to the drying section.
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19 ’而後將伸縮臂21沿著垂直方向γ伸長，使收納籃22配 置於烘乾爐1 9a内。並在此烘乾爐丨9a内，在％氣體或乾空 氣等之乾燥環境中，將電子零件9在約〗5 〇艺之下予以加 熱’使附著於電子零件9表面上之沖洗液蒸發而將電子雯 件9烘乾。 ^ 接 道2 0沿 之收納 由 法，將 鑛層， 的氟系 在氣體 地將引 於加熱 此，可 剝離及 學液中 化，故 又 子零件 簡單的 於軟熔 造成加 ^ ’將伸縮臂2 1沿著垂直方向γ收縮後，將搬送執 著水平方向2 0移動，藉此使收納複數個電子零件g 籃22，自卸載部13搬送至裝置本體u外面。7 上述得知，依據本實施型態的電子零件之製造方 形成於引線2表面而作為連接用導電層8之以-Bi ==時間浸漬在加熱至Sn_Bi電鍍層的熔點以上 非活性化學液内予以融化，因此’相較於以往兩 壤境中加熱的製造方法，能在更短 ί2理表中面rr 引線2及到電子零件9之内部。因 避免對封裝7施加大的應力，且 ^ ^ 裂解。又，由於將電子零件9浸潰以=内部 ==加熱處理，而減少對面 此進仃有利於可焊接性或連接可靠性之的軋 ，用以實施本實施型態的電子零 = 製造裝置1〇 ’係由習知裝置的組合=方= 構造可以製造抑制晶鬚發生之 ：的：故:1〗用 等在氣體中所進行的加熱方法，隨著I件m 熱槽的溫度下降之葙许盏一, 考零件的加入而 之私度為車父小，而可輕易增加-處Then, the telescopic arm 21 is extended in the vertical direction γ, and the storage basket 22 is placed in the drying furnace 19a. And in the drying furnace 9a, in the dry environment of % gas or dry air, the electronic component 9 is heated under about 5 liters to evaporate the rinsing liquid attached to the surface of the electronic component 9 The electronic figure 9 is dried. ^ The channel is separated by 0. The fluorine layer in the ore layer will be heated in the gas layer. It can be stripped and neutralized. Therefore, the sub-component is simply added to the reflow. After the arm 2 1 is contracted in the vertical direction γ, the transporting horizontal direction 20 is moved, whereby a plurality of electronic component g baskets 22 are housed and transported from the unloading unit 13 to the outside of the apparatus main body u. 7 As described above, the electronic component according to the present embodiment is formed on the surface of the lead 2 and is immersed as a connecting conductive layer 8 at -Bi == time in an inactive chemical liquid heated above the melting point of the Sn_Bi plating layer. It is melted, so it can be used to make the rr lead 2 and the inside of the electronic part 9 shorter in the shorter range than the conventional heating method in the two soils. This avoids the application of large stresses to the package 7 and ^ ^ cracking. Moreover, since the electronic component 9 is immersed to = internal == heat treatment, the rolling which is advantageous for solderability or connection reliability is reduced, and the electronic zero = manufacturing apparatus 1 of this embodiment is implemented. 〇 ' is a combination of conventional devices = square = structure can be made to suppress the occurrence of whiskers: Therefore: 1] with the heating method carried out in the gas, with the temperature drop of the I piece m heat sink Xu Yiyi, the private part of the test part is private to the car, and can be easily added -
1261628 五、發明說明（16) 理單位中的電子零件數，因此，更能降低成本。 利用本實施型態所揭露的製造方法以製造的電子零件 9 (即樹脂密封型半導體裝置），如圖3以及圖4所不’係 具有由樹脂等模製成型的封裝了之雨側面’拉出複數條如 F e - N i合金所形成之引線2的構造，在各個引線2之表面 上’預先形成*Sn — 合金電鑛層戶斤形成之連接用導電層 8。構成此連接用導電層8的以 — B丄合金電鍍層，如前述，1261628 V. INSTRUCTIONS (16) The number of electronic parts in the unit is therefore more cost-effective. The electronic component 9 (i.e., the resin-sealed semiconductor device) manufactured by the manufacturing method disclosed in this embodiment mode is not packaged as shown in Figs. 3 and 4, and has a packaged rain side surface molded by a resin or the like. The structure of the lead wires 2 formed of a plurality of alloys such as F e - N i alloy is pulled out, and the connection conductive layer 8 formed of *Sn - alloy electric ore layer is formed in advance on the surface of each lead wire 2. a -B 丄 alloy plating layer constituting the connection conductive layer 8, as described above,
係利用圖5所示之電子零件製造裝置1 〇，於其加熱部1 6中 被浸潰於加熱至2 2 〇〜2 8 0 °C的氣系#活性化學液中而被熔 化’使連接用導電層8變化成具穩定結晶結構的熔化之連 接用導電層8 A，故具有可抑制晶鬚發生之結晶結構。於 此’為使電子零件9容易安裝於基板上，所完成的電子零 件9其作為外部端子的引線2之形狀，係如圖3所示般將其 端部幫折。 法，如此’依據本實施型態所揭露的電子零件之製造方 人金將構成形成於引線2表面上的連接用導電層8 iSn — Bi i電^層/在〇 · 2〜5秒鐘的極短時間内浸潰在加熱至 學液i/rfp電鍍層之熔點以上的2 20〜28〇°C之氟系非活性化The electronic component manufacturing apparatus 1 shown in FIG. 5 is immersed in the gas system #active chemical liquid heated to 2 2 〇 to 280 ° C in the heating portion 16 to be melted. The conductive layer 8 is changed to a molten connecting conductive layer 8 A having a stable crystal structure, so that it has a crystal structure capable of suppressing the occurrence of whiskers. Here, in order to make the electronic component 9 easy to mount on the substrate, the finished electronic component 9 has the shape of the lead 2 as an external terminal, and the end portion thereof is folded as shown in FIG. According to the method, the manufacturing method of the electronic component disclosed in the present embodiment will constitute the connecting conductive layer 8 iSn — Bi i layer formed on the surface of the lead 2 / at 〇 2 to 5 seconds In a very short period of time, it is impregnated with fluorine in the range of 2 20~28 °C above the melting point of the i/rfp plating layer.
能抑制於Λ ί南藉此而能集中加熱Sn — Bi合金電鍍層’故 部。' 〇…、處理中使熱氣自引線2波及到電子零件9之内 連接用導電子零件9，於引線2的表面形成有構） 係被浸潰於Βι合金電鍍層，此sn—M合金電鍍層 ;加熱至Sn-Bi合金電鍍層的熔點以上的氤系非 1261628 五、發明說明（17) = = Γ而被溶化’變成具有穩定結晶結構 的熔化之連接用導電層8Α，故可抑制晶鬚之發生。 又：依此例之電子零件製造裝置10包含加熱部16，用 以St於引線2表面上之構成連接用導電層8的Sn-ΒΜ v予人以溶：，此加熱部16的加熱槽…内裝滿著加 …至^ !。金電鍍層的熔點以上之氟系非活性化學液， 由於係將Sn-Bi合金電鍍層浸潰於此氟系非活性化 =寺=使其溶化…讓以簡單構造抑制肅^ 因此j將為了抑制晶鬚之發生而形成於外部端子表面 ^無鉛Sn系合金電鍍層所形成的連接用導電層予以熔化 時，不會因加熱處理而使電子零件之内部受到熱的影響。 以上’雖係參照附圖詳細說明有關本發明之實施型 態，然本發明之具體構成並不限於上述實施例。即使包含 有不脫發明之要旨範圍内的設計變更等，亦仍屬於本 發=之範疇。例如，在實施例中雖以對具有弓丨線形狀之外 邙知子开y成連接用導電層的情形為例加以説明，但並不限 於引線形狀’只要能使用作為外部端子者即可適用。又， 在實施例中，關於電子零件雖以應用於1C之情形為例說 ^但應用於I C之外，亦可應用於如圖6 ( a )所示之插入 ，凌型之電晶體23，或如圖6 (b)所示之表面安裝型之電 曰曰體24，或如圖6 (c)所示之電解電容器25等其他電子零 :又不限於為了晶鬚措施而進行之電孑零件處理上的 心用，亦可應用在需要使對象物的内部構造所受的熱應力It can suppress the heating of the Sn-Bi alloy plating layer by Λ 南 南. '〇..., during the processing, the hot gas is applied from the lead 2 to the conductive sub-part 9 for connection in the electronic component 9, and is formed on the surface of the lead 2, and is impregnated on the 合金1 alloy plating layer, and the sn-M alloy plating a layer; a lanthanide non-1261628 heated to a melting point of the Sn-Bi alloy plating layer. 5. Description of the invention (17) = = Γ is melted and becomes a molten connecting layer 8 具有 having a stable crystal structure, so that the crystal can be suppressed It must happen. Further, the electronic component manufacturing apparatus 10 according to this example includes a heating portion 16 for stating the Sn-ΒΜv of the connecting conductive layer 8 on the surface of the lead 2 to dissolve the heating groove of the heating portion 16... The interior is filled with plus... to ^!. A fluorine-based inactive chemical liquid having a melting point or higher above the gold plating layer, because the Sn-Bi alloy plating layer is impregnated with the fluorine-based inactivation = temple = melted, so that the structure is suppressed by a simple structure, so j will be When the connection conductive layer formed on the external terminal surface and the lead-free Sn-based alloy plating layer is formed by suppressing the occurrence of whiskers, the inside of the electronic component is not affected by heat due to heat treatment. The above embodiments are described in detail with reference to the accompanying drawings, but the specific configuration of the present invention is not limited to the above embodiments. Even if there are design changes within the scope of the gist of the invention, it is still within the scope of this issue. For example, in the embodiment, the case where the conductive layer for connection is opened in the shape of a bow line is described as an example. However, the shape of the lead wire is not limited as long as it can be used as an external terminal. Further, in the embodiment, the case where the electronic component is applied to the 1C is exemplified, but it is applied to the IC, and can also be applied to the insertion of the transistor 23 as shown in Fig. 6 (a). Or the surface mount type electric body 24 shown in Fig. 6 (b), or other electronic zero such as the electrolytic capacitor 25 shown in Fig. 6 (c): not limited to the electric whisker for the whisker measure The core of the part processing can also be applied to the thermal stresses required to make the internal structure of the object
1261628 五、發明說明（18) 為最小’同時需要將其表面予以均勻的加熱之情況。例 如，亦可應用於對BGA (Ball Gri(i Arra/，球柵陣列）封 裝施加焊球時所進行之加熱處理，或用以將電子零件安裝 於基板之熱處理等。 ^ 又，有關作為電子零件之外部端子的引線上形成由Sn 系合金形成的連接用導電層之表面處理法，以電鍍法為例 而說明’但並不限於電鍍法，亦可利用無電解電鍍法、化 學電鑛法、或將電解電鍍法等與無電解電鍍法組合之電鍍 法等等之其他電鑛法。又，在本發明中，以形成由Sn系合 金所形成的連接用導電層之引線，係以使用Fe — Ni合金為 例而作說明，但不限於此，亦可使用含有其他金屬成分之 Fe系合金。再者，不限於使用Fe系合金，亦可使用Cu或以 Cii為f要成分之Cu系合金。又，在實施型態中，就Sn系合 金而a ’係以Sn〜B i合金為例而作說明，但只要為純sn或 與S η形成低溶點合金之金屬，則並不限於b丨，亦可使用 Ag、Cu或Zn等之其他金屬。又，在實施型態中，以使用氟 系非活性化學液為例而作說明，但只要在熱處理時的壓力 之下’其液體之沸點為高於電鍍熔點，且不會對電極造成 腐蝕等之影響者即可適用。 又’在貫施型態所示之電子零件製造裝置中，達到加 f部之β没有預熱部，或可省略此部份或在液體中進行 等’可做適當的變更。再者，本案以設有2個沖洗部為例 而作說明’但並不一定需要設置2個沖洗部，可依據被處 理體的電子零件其數量之多寡以適當加減。又，有關電子1261628 V. INSTRUCTIONS (18) is the minimum 'the case where the surface needs to be uniformly heated. For example, it can also be applied to a heat treatment performed when a solder ball is applied to a BGA (Ball Gri (i Arra/) ball grid array package, or a heat treatment for mounting an electronic component on a substrate, etc. ^ Further, as an electron A surface treatment method of forming a conductive layer for connection formed of a Sn-based alloy on a lead of an external terminal of the component, and an electroplating method is taken as an example. However, it is not limited to the electroplating method, and an electroless plating method or a chemical electro-mine method may also be used. Or another electro-mine method such as electroplating or the like which is combined with an electroless plating method, etc. Further, in the present invention, a lead for forming a connecting conductive layer formed of a Sn-based alloy is used. The Fe-Ni alloy is exemplified as an example, but is not limited thereto, and an Fe-based alloy containing another metal component may be used. Further, it is not limited to the use of a Fe-based alloy, and Cu or Cu having Cii as an essential component may be used. Further, in the embodiment, the Sn-based alloy and the a'-based Sn-B i alloy are exemplified, but as long as they are pure Sn or form a low-melting alloy metal with S η , Not limited to b丨, you can also use Ag, C u or other metals such as Zn. Further, in the embodiment, a fluorine-based inactive chemical liquid is used as an example, but as long as the boiling point of the liquid is higher than the plating melting point under the pressure at the time of heat treatment, It is not applicable to the influence of corrosion or the like on the electrode. Further, in the electronic component manufacturing apparatus shown in the embodiment, the portion of the portion where the f portion is added has no preheating portion, or the portion may be omitted or In the case of liquid, etc., it can be appropriately changed. In addition, in this case, two flushing sections are provided as an example. However, it is not necessary to provide two flushing sections, depending on the number of electronic components of the object to be processed. Appropriate additions and subtractions.
第23頁 1261628 五、發明說明（19) 日零件製造裝置的回收部，係 7但亦可以不使用有機溶 (air〜blow )之物理回收裝 可:又，在熱處理結束後， 理等，以去除表面氧化膜或 又，電子零件製造裝置亦可 f生而使氧濃度降低，而防止 化的同時，回收已揮發的氟 又，若將電子零件浸潰 不要將電子零件整體浸潰， 裝之損害。再者，若將電子 液内，如在實施型態中所說 別浸潰，而是在引線之切斷 架本身之狀態直接浸潰亦可 日令間、溫度管理，或進行局 限於在實施型態中所揭露的 可使用另一方法’即是對固 的非活性氣體喷射之熱處理 【發明的效果】 如上說明，依據本發明 構成形成於外部端子表面上 金電鍍層，浸潰於加熱至前 的氟系非活性化學液中極短 加熱位於表面的S η系合金電 以使用有機溶劑為知 劑，而使用如空氣吹掃乍說 置，或由此等組合以^ 、 藉由酸或鹼性溶劑φ ^成印亦 膜，藉此亦能提高可濕、性^處 裝設藉由提高裝置整，° , 體的氣密 作為被處理體的電子跫姓 厂+件之氧 化系非活性化學液之構造。 於氟化系非活性化學液内時， 而僅浸潰引線則能更減少對封 零件浸潰於氟化系非活性化學 明者，不要將各個電子零件分 以及成型之前，即是以引線框 。又，若欲進行較嚴緊之加熱 部加熱處理之情況之下，則不 浸潰於加熱液體中之方法，亦 定的電子零件自喷嘴將已加熱 的電子零件之製造方法，係將 的連接用導電層的無鉛以系合 述Sn系合金電鍍層之熔點以上 時間，以使其熔化，故能集中 鍵層之部分，而防止於加熱處Page 23 1261628 V. INSTRUCTIONS (19) The collection part of the daily parts manufacturing equipment is 7 but it is also possible to use the physical recovery of the organic solvent (air to blow): after the heat treatment is finished, The surface oxide film is removed, or the electronic component manufacturing apparatus can reduce the oxygen concentration, and prevent the volatile fluorine from being recovered. If the electronic component is impregnated, the electronic component should not be completely impregnated. damage. In addition, if the electronic liquid is impregnated as described in the embodiment, it may be directly impregnated in the state of the lead of the cutting frame itself, or may be controlled by the day, temperature, or implementation. Another method that can be used in the form can be used as a heat treatment for solid inert gas injection. [Effects of the Invention] As described above, according to the present invention, a gold plating layer formed on the surface of an external terminal is formed, and is immersed in heating to In the former fluorine-based inactive chemical liquid, the S η-based alloy electricity located on the surface is extremely shortly heated to use an organic solvent as a known agent, and is used, for example, by an air purge, or by a combination thereof, by acid or The alkaline solvent φ ^ is printed on the film, thereby improving the wettability, the installation of the device by increasing the integrity of the device, and the gas tightness of the body as the object to be treated. The structure of the active chemical liquid. When it is used in a fluorinated inactive chemical liquid, only the impregnation of the lead wire can reduce the impregnation of the sealing part to the fluorinated inactive chemical. Do not divide the individual electronic parts and form the lead frame before molding. . Moreover, if it is desired to perform a relatively strict heat treatment of the heating portion, the method of not immersing in the heating liquid, and the method of manufacturing the electronic component from the nozzle by the electronic component from the nozzle The lead-free of the conductive layer is combined with the melting point of the Sn-based alloy plating layer to melt it, so that part of the bonding layer can be concentrated and prevented from being heated.
1261628 五、發明說明（20) 理中所產生的熱自外部端子波及到電子零件之内部。 又，依本發明的電子零件之構造，係於外部端子表面 上形成構成連接用導電層之Sn系合金電鍍層，並將此Sη系 合金電鍍層浸潰在加熱至前述Sn-Bi合金電鍵層之炫點以 上之氟系非活性化學液中極短時間使其熔化，而變成結晶 組織穩定的已熔化之連接用導電層，故能抑制晶鬚之發 生。1261628 V. INSTRUCTIONS (20) The heat generated in the process is transmitted from the external terminal to the inside of the electronic component. Further, according to the structure of the electronic component of the present invention, a Sn-based alloy plating layer constituting a conductive layer for connection is formed on the surface of the external terminal, and the Sη-based alloy plating layer is immersed in the Sn-Bi alloy key layer. In the fluorine-based inactive chemical liquid having a bright point or more, it is melted for a short time, and becomes a molten conductive layer for melting which is stable in crystal structure, so that generation of whiskers can be suppressed.
又，依本發明的電子零件製造裝置包含加熱部，用以 將構成形成於外部端子表面之連接用導電層的S η系合金電 鑛層予以溶化，此加熱部的加熱槽内裝滿著加熱至前述S η 系合金電鍍層之溶點以上的氟系非活性化學液，而其構造 係用以在極短時間内將Sn系合金電鍍層浸潰於氟系非活性 化學液中予以熔化，而能藉由如此簡單構造以製造可抑制 晶鬚發生之電子零件。 因此，為抑制晶鬚之發生，當欲將形成於外部端子表 面之無鉛Sn系合金電鍍層所形成的連接用導電層予以熔化 時，可防止因進行加熱處理而造成的熱影響波及到電子零 件之内部。Moreover, the electronic component manufacturing apparatus according to the present invention includes a heating portion for melting the S η-based alloy electric ore layer constituting the connection conductive layer formed on the surface of the external terminal, and the heating tank of the heating portion is filled with heating a fluorine-based inactive chemical liquid having a melting point or higher to the melting point of the S η -based alloy plating layer, and a structure for melting the Sn-based alloy plating layer in a fluorine-based inactive chemical liquid in a very short time. It is possible to manufacture an electronic component that suppresses the occurrence of whiskers by such a simple configuration. Therefore, in order to suppress the occurrence of whiskers, when the conductive layer for connection formed by the lead-free Sn-based alloy plating layer formed on the surface of the external terminal is to be melted, heat influence due to heat treatment can be prevented from being applied to the electronic component. Internal.
第25頁 1261628 圖式簡單說明 五、【圖式之簡單說明】 圖1 ( a) ( b ) ( c )係依製程順序顯示本發明之一實施型態 的電子零件之製造方法之製程圖。 圖2 ( d)( e )係依製程順序顯示同一電子零件之製造方 法之製程圖。 圖3係顯示使用同一電子零件之製造方法所製造的電 子零件之一立體圖。 圖4係圖3之A - A箭頭剖面圖。Page 25 1261628 Brief description of the drawings V. [Simple description of the drawings] Fig. 1 (a) (b) (c) shows a process diagram for manufacturing a method of manufacturing an electronic component according to an embodiment of the present invention in a process sequence. Figure 2 (d)(e) shows the process diagram for the manufacturing method of the same electronic component in the order of process. Fig. 3 is a perspective view showing an electronic component manufactured by a manufacturing method using the same electronic component. Figure 4 is a cross-sectional view taken along line A - A of Figure 3.
圖5顯示用以實施同一電子零件之製造方法的製造裝 置之構造的圖式。 圖6 (a) ( b ) ( c )係顯示適用本發明的電子零件的變化例 之立體圖。 圖7係顯示習知電子零件的一變化例的可變電阻器之 局部構造之剖面圖。 【元件符號之簡單說明】 1〜薄片 2〜引線（外部端子）Fig. 5 is a view showing the configuration of a manufacturing apparatus for carrying out the manufacturing method of the same electronic component. Fig. 6 (a), (b) and (c) are perspective views showing a modification of the electronic component to which the present invention is applied. Fig. 7 is a cross-sectional view showing a partial configuration of a variable resistor of a variation of a conventional electronic component. [Simple description of component symbols] 1 to thin sheet 2 to lead (external terminal)
3〜引線框架 4〜焊塾電極 5〜半導體晶片 6〜接合線 7〜封裝 8〜連接用導電層3 to lead frame 4 to solder electrode 5 to semiconductor wafer 6 to bonding wire 7 to package 8 to conductive layer for connection
第26頁 1261628 圖式簡單說明 8A〜熔化後的連接用導電層 9〜電子零件（樹脂封止型半導體裝置） 10〜電子零件製造裝置 11〜裝置本體 1 2〜裝載部 1 3〜卸載部 1 4〜搬送部 1 5〜預熱部 1 6〜加熱部Page 26 1261628 Brief description of the drawings 8A - The conductive layer 9 to the connection after melting, the electronic component (resin-sealed semiconductor device) 10 - The electronic component manufacturing device 11 - The device body 1 2 - The loading portion 1 3 - The unloading portion 1 4 to the conveying unit 1 5 to the preheating unit 1 6 to the heating unit
1 6 a〜加熱槽 1 7〜回收部 1 7 a〜回收槽 1 8、1 8 A、1 8 B〜沖洗部 1 9〜烘乾部 19a〜烘乾爐 20〜搬送執道 2 1〜伸縮臂 2 2〜收納籃1 6 a~heating tank 1 7~recycling unit 1 7 a~recovering tank 1 8 ,1 8 A,1 8 B~rinsing unit 1 9 to drying unit 19a~drying furnace 20~transporting 2 1~stretching Arm 2 2 ~ storage basket
2 3〜插入安裝型的電晶體 24〜表面安裝型的電晶體 25〜電解電容器2 3~ Insert type transistor 24~ Surface mount type transistor 25~ Electrolytic capacitor
第27頁Page 27
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| JP2002364467A JP2004200249A (en) | 2002-12-16 | 2002-12-16 | Electronic component and its producing method and system |
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| JPS59161850A (en) | 1983-03-07 | 1984-09-12 | Hitachi Ltd | Resin sealed type semiconductor device and lead frame used therefor |
| KR960032701A (en) * | 1995-02-15 | 1996-09-17 | 김광호 | Lead frame for semiconductor and surface treatment method |
| KR19990000386A (en) * | 1997-06-05 | 1999-01-15 | 윤종용 | Leadframe of Semiconductor Package |
| JP3622462B2 (en) * | 1997-12-16 | 2005-02-23 | 株式会社日立製作所 | Semiconductor device |
| JPH11354705A (en) * | 1998-06-04 | 1999-12-24 | Toshiba Corp | Semiconductor device and its manufacture |
| JP2002030468A (en) * | 2000-07-19 | 2002-01-31 | Furukawa Electric Co Ltd:The | Lead wire for electronic parts |
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