JPS6344299B2 - - Google Patents
Info
- Publication number
- JPS6344299B2 JPS6344299B2 JP6981381A JP6981381A JPS6344299B2 JP S6344299 B2 JPS6344299 B2 JP S6344299B2 JP 6981381 A JP6981381 A JP 6981381A JP 6981381 A JP6981381 A JP 6981381A JP S6344299 B2 JPS6344299 B2 JP S6344299B2
- Authority
- JP
- Japan
- Prior art keywords
- silver
- plating layer
- silver plating
- selenium
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007747 plating Methods 0.000 claims description 97
- 229910052709 silver Inorganic materials 0.000 claims description 84
- 239000004332 silver Substances 0.000 claims description 84
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 83
- 239000010410 layer Substances 0.000 claims description 70
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 239000011669 selenium Substances 0.000 claims description 35
- 229910052711 selenium Inorganic materials 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 125000003748 selenium group Chemical group *[Se]* 0.000 claims 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 33
- 239000002585 base Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 11
- 229940098221 silver cyanide Drugs 0.000 description 11
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 230000004584 weight gain Effects 0.000 description 7
- 235000019786 weight gain Nutrition 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000011282 treatment Methods 0.000 description 5
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- CYVKTCMFCQRFIW-UHFFFAOYSA-N [Ag].N#CC#N.[K] Chemical compound [Ag].N#CC#N.[K] CYVKTCMFCQRFIW-UHFFFAOYSA-N 0.000 description 1
- MFIHOCAEOJNSOL-UHFFFAOYSA-N [Ag]C#N Chemical class [Ag]C#N MFIHOCAEOJNSOL-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 235000019198 oils Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 235000015112 vegetable and seed oil Nutrition 0.000 description 1
- 239000008158 vegetable oil Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
【発明の詳細な説明】
本発明は電子部品用金属部材に関し、特に表面
に銀（Ag）被覆層を有する基体部材あるいは端
子部材を有する電子部品に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a metal member for electronic components, and more particularly to an electronic component having a base member or terminal member having a silver (Ag) coating layer on its surface.
電子部品、例えば半導体集積回路装置にあつて
は、当該集積回路装置が樹脂封止型である場合に
はそのリードフレーム、当該集積回路装置がセラ
ミツク封止型である場合には外部接続端子等を構
成する金属体の表面に銀（Ag）めつき被覆を施
すことが行なわれている。 For electronic components, such as semiconductor integrated circuit devices, if the integrated circuit device is a resin-sealed type, its lead frame, and if the integrated circuit device is a ceramic-sealed type, external connection terminals, etc. Silver (Ag) plating is applied to the surface of the constituent metal bodies.
かかる銀めつき被覆は、リードフレームあるい
は外部接続端子を構成する42合金、コバールある
いは銅等の金属体の耐蝕性、耐熱性、電気伝導性
等を向上するとともに、当該金属基体への半田付
け性、リード線接続性等を向上する上で有効であ
る。 Such a silver-plated coating improves the corrosion resistance, heat resistance, electrical conductivity, etc. of the metal body such as 42 alloy, Kovar, or copper that constitutes the lead frame or external connection terminal, and also improves the solderability to the metal base. , is effective in improving lead wire connectivity, etc.
しかしながら、これらの諸特性を満足した上
に、基体金属との密着性が高く、ピンホール等の
欠陥を有することがなく、更に用途によつて所望
の光沢を要求されるため、前記銀めつき被覆は、
従来３〜10〔μm〕という厚さをもつて形成されて
いる。 However, in addition to satisfying these characteristics, the silver plating has high adhesion to the base metal, does not have defects such as pinholes, and is required to have the desired gloss depending on the application. The coating is
Conventionally, it has been formed with a thickness of 3 to 10 [μm].
ところが近時半導体装置の低価格が要求され、
省貴金属化の傾向が強まり、前記銀めつき処理に
おいても部分めつき化、薄めつき化が図られつつ
ある。 However, recently there has been a demand for lower prices for semiconductor devices,
There is a growing tendency to use less precious metals, and partial plating and thinner plating are also being attempted in the silver plating process.
一方、このような省貴金属化の傾向の中でも、
前記諸機能特性の低下を招くことなくより信頼度
の高い銀めつき処理が望まれている。 On the other hand, even in this trend of saving precious metals,
A more reliable silver plating process is desired without causing a deterioration of the various functional characteristics.
したがつて、前記薄めつき化により銀の使用量
を低減しようとする場合には、前記諸機能特性を
満足することが困難となるため、めつき浴の改善
を図つたり、銀合金めつきに変更してこれに対処
している例もあるが、かかる手段によつても前記
諸機能特性を全て満足することは極めて困難であ
る。 Therefore, when trying to reduce the amount of silver used by thinning, it becomes difficult to satisfy the various functional characteristics described above, so it is necessary to improve the plating bath or to reduce the amount of silver used by silver alloy plating. Although there are examples in which this problem has been addressed by changing to the above, it is extremely difficult to satisfy all of the above-mentioned functional characteristics even with such means.
本発明は、このような従来の銀めつき構成を改
善して、前記諸機能特性をより有効に果すことが
できる銀めつき層を有する電子部品用金属部材を
提供しようとするものである。 The present invention aims to improve such a conventional silver plating structure and provide a metal member for electronic components having a silver plating layer that can more effectively achieve the various functional characteristics described above.
このため、本発明によれば、金属基体上に表面
層として銀めつき層からなる被覆が施されてなる
電子部品用金属部材において、前記銀めつき層の
下層にセレン、アンチモン、銅、コバルト、亜
鉛、テルル及びインジウムから選択された少なく
とも一つの物質を40〜10000〔ppm〕含有する銀め
つき層を施してなる電子部品用金属部材が提供さ
れる。 Therefore, according to the present invention, in a metal member for electronic components in which a coating consisting of a silver plating layer is applied as a surface layer on a metal substrate, selenium, antimony, copper, or cobalt is added to the lower layer of the silver plating layer. A metal member for electronic components is provided, which is coated with a silver plating layer containing 40 to 10,000 [ppm] of at least one substance selected from zinc, tellurium, and indium.
以下、本発明を実施例をもつて詳細に説明す
る。 Hereinafter, the present invention will be explained in detail using examples.
以下の実施例においては、被銀めつき金属基体
として42合金からなる樹脂封止型半導体装置用リ
ードフレームを用い、めつき前処理として、有機
溶剤によるプレスの際の油の除去、アルカリ脱脂
による植物性油の除去、シアン化カリウムと水酸
化ナトリウムとを用いた電解脱脂更には塩酸を用
いた酸処理を行なつた後水洗処理を行なつた。 In the following examples, a lead frame for a resin-sealed semiconductor device made of alloy 42 is used as the metal substrate to be silver plated, and pre-treatments for plating include removal of oil during pressing with an organic solvent and degreasing with an alkali. After removal of vegetable oil, electrolytic degreasing using potassium cyanide and sodium hydroxide, and acid treatment using hydrochloric acid, water washing treatment was performed.
実施例 １
前記被めつき金属基体を、温度50〔℃〕の銅
（Cu）シアン浴に浸漬し、前記被めつき金属基
体の表面に厚さ0.3〔μm〕程の銅めつきを施し
た。かかる状態を第１図ａに示す。同図におい
て、１１は金属基体、１２は銅めつき層であ
る。Example 1 The plated metal base was immersed in a copper (Cu) cyanide bath at a temperature of 50 [°C], and copper plating was applied to the surface of the plated metal base to a thickness of about 0.3 [μm]. . Such a state is shown in FIG. 1a. In the figure, 11 is a metal base and 12 is a copper plating layer.
かかる銅めつき１２は、当該被めつき金属基
体１１と以後に形成される銀めつき層との密着
性の向上を図るものである。 The copper plating 12 is intended to improve the adhesion between the plated metal base 11 and the silver plating layer to be formed later.
次いで前記被めつき金属基体を温度25〔℃〕
の銀シアンストライク浴に浸漬し、前記銅めつ
き層上に厚さ0.2〔μm〕程の銀ストライクめつ
き層を形成した。かかる状態を第１図ｂに示
す。同図において１３は銀ストライクめつき層
である。 Next, the plated metal substrate was heated to a temperature of 25 [℃].
A silver strike plating layer having a thickness of about 0.2 [μm] was formed on the copper plating layer by immersing it in a silver cyan strike bath. Such a state is shown in FIG. 1b. In the figure, 13 is a silver strike plating layer.
かかる銀ストライクめつき層１３は以後の銀
めつき工程において銀めつき浴中に前記銅めつ
き部分が溶出し当該銀めつき浴を汚染すること
を防止するためのものである。 The purpose of this silver strike plating layer 13 is to prevent the copper plated portion from eluting into the silver plating bath and contaminating the silver plating bath in the subsequent silver plating process.
本発明によれば、次いで被めつき金属基体を
温度25〔℃〕の、セレン（Se）を含有した銀シ
アン浴（濃度100〔ｇ／〕のシアン化カリウム
（KCN）と、濃度100〔ｇ／〕のシアン銀カリ
ウム（KAg（CN）2）からなる浴）中に浸漬し、
前記ストライクめつき層１３上に厚さ2.0〔μm〕
のセレン含有銀めつき層を形成した。かかる状
態を第１図ｃに示す。同図において、１４はセ
レン含有銀めつき層である。 According to the present invention, the coated metal substrate is then treated with a silver cyanide bath containing selenium (Se) (potassium cyanide (KCN) at a concentration of 100 [g/] and a concentration of 100 [g/]) at a temperature of 25 [°C]. immersed in a bath consisting of cyanogen-silver potassium (KAg(CN) 2 ),
A thickness of 2.0 [μm] on the strike plating layer 13
A selenium-containing silver plating layer was formed. Such a state is shown in FIG. 1c. In the figure, 14 is a selenium-containing silver plating layer.
ここで銀シアン浴中へのセレンの添加は、形
成される銀めつき層の下地保護性すなわち下地
層の酸化を防止し半田付け性を向上し得る特性
をより増長させるためになされる。かかる目的
を達成するために本発明にあつては、銀シアン
浴中へのセレンの添加量は２〜1000〔ppm〕と
される。 Here, selenium is added to the silver cyanide bath in order to further enhance the underlying protective properties of the silver plating layer to be formed, that is, the properties that can prevent oxidation of the underlying layer and improve solderability. In order to achieve this object, in the present invention, the amount of selenium added to the silver cyanide bath is set at 2 to 1000 [ppm].
かかる量（２〜1000〔ppm〕のセレンが添加
されためつき浴を用いて形成された銀めつき層
には、40〜10000〔ppm〕のセレンが含有され
る。めつき浴中におけるセレンの添加量と生成
される銀めつき層中におけるセレンの含有量
（析出量）とは、当該セレンの添加量が少量で
ある場合には比例関係にあるが、セレンの添加
量が多量である場合には飽和状態となり比例し
ない。当該セレンの含有量が40〔ppm〕未満で
あると前記下地保護性が十分でなく、セレン添
加の効果が生じない。また当該セレンの含有量
が10000〔ppm〕を越えると、生成された銀めつ
き皮膜にふくれを生じてしまい好ましくない。 A silver plating layer formed using a plating bath to which selenium is added in such an amount (2 to 1000 [ppm]) contains 40 to 10000 [ppm] selenium. There is a proportional relationship between the addition amount and the selenium content (precipitation amount) in the silver plating layer produced when the addition amount of selenium is small, but when the addition amount of selenium is large. If the selenium content is less than 40 [ppm], the base protection property will not be sufficient and the effect of selenium addition will not occur.Also, if the selenium content is less than 10000 [ppm] If it exceeds this value, the resulting silver plating film will blister, which is undesirable.
このようなセレン添加の効果ならびに銀めつ
き皮膜の膜質等からもたらされる作業性、制御
性からして、前記銀シアン浴中に添加されるセ
レンの量は10〜20〔ppm〕とすることがより好
ましい。 Considering the effect of selenium addition as well as the workability and controllability brought about by the film quality of the silver plating film, the amount of selenium added to the silver cyanide bath should be 10 to 20 [ppm]. More preferred.
本発明によれば、次いで前記被めつき金属基
体を温度25〔℃〕の銀シアン浴中へ浸漬し、前
記セレンを含む銀めつき層上に厚さ1.0〔μm〕
の銀めつき層（表面銀めつき層）を形成した。
かかる状態を第１図ｄに示す。同図において、
１５は本工程により生成された銀めつき層を示
す。 According to the present invention, the plated metal substrate is then immersed in a silver cyanide bath at a temperature of 25 [°C], and a thickness of 1.0 [μm] is deposited on the selenium-containing silver plating layer.
A silver plating layer (surface silver plating layer) was formed.
Such a situation is shown in FIG. 1d. In the same figure,
15 shows the silver plating layer produced by this process.
かかる銀めつき層１５の形成は、被めつき金
属基体の耐蝕性、耐熱性、リード線接続性等の
向上並びに保障を行なうためになされる。 The silver plating layer 15 is formed in order to improve and guarantee the corrosion resistance, heat resistance, lead wire connectivity, etc. of the plated metal substrate.
このようにして本発明にかかる銀めつき処理
が施された金属基体と、従来技術に従つて、セ
レンを含まない銀シアン浴への浸漬処理によつ
て厚さ３〔μm〕の銀めつきが施された金属基体
との、下地保護性を比較したとろ第２図に示さ
れる特性が得られた。 The metal substrate thus subjected to the silver plating treatment according to the present invention is silver plated to a thickness of 3 [μm] by immersion treatment in a selenium-free silver cyanide bath according to the prior art. The properties shown in Fig. 2 were obtained by comparing the base protection properties with a metal substrate coated with the following.
第２図において、横軸は温度400〔℃〕の空気中
における加熱時間を示し、縦軸は前記金属基体の
酸化増量（μｇ／cm2）を示す。また同図におい
て、実線Ａは本発明にかかる銀めつき処理が施さ
れた金属基体の酸化増量の変化を、実線Ｂは従来
法によつて銀めつき処理が施された金属基体の酸
化増量を示す。 In FIG. 2, the horizontal axis shows the heating time in air at a temperature of 400 [° C.], and the vertical axis shows the oxidation weight gain (μg/cm 2 ) of the metal substrate. Furthermore, in the same figure, solid line A shows the change in oxidation weight gain of the metal substrate subjected to the silver plating treatment according to the present invention, and solid line B shows the change in oxidation weight gain of the metal substrate subjected to the silver plating treatment according to the conventional method. shows.
かかる酸化増量特性から明らかな如く、本発明
によれば、従来技術によるものに比較して、同一
加熱時間における酸化増量が約1/2に減少する。
すなわち本発明によれば、銀めつきによる下地保
護性が大幅に改善される。 As is clear from the oxidation weight gain characteristics, according to the present invention, the oxidation weight gain is reduced to about 1/2 for the same heating time compared to the conventional technology.
That is, according to the present invention, the protection of the base by silver plating is greatly improved.
このように、不地保護性が改善されることによ
つて半田付け性も向上し、本発明によれば、従来
法によつて形成される銀めつき層に対する半田付
け性と同程度の半田付け性を得るための銀めつき
厚を、かかる従来法によつて形成される銀めつき
層の厚さの2/3〜1/2の値とすることができる。す
なわち、銀の使用量の低減化が図れ電子部品の低
価格化を実現することができる。 As described above, the solderability is also improved by improving the surface protection property, and according to the present invention, the solderability is comparable to that for the silver-plated layer formed by the conventional method. The thickness of silver plating for obtaining adhesion properties can be set to a value of 2/3 to 1/2 of the thickness of the silver plating layer formed by such conventional methods. In other words, the amount of silver used can be reduced, and the cost of electronic components can be lowered.
実施例 ２
本実施例にあつては、前記実施例１におけると
同一の工程〜がとられ銅下地めつき層、銀ス
トライクめつき層、セレンを含む銀めつき層及び
表面銀めつき層の形成がなされた金属基体に対
し、更に光沢めつきを施した。Example 2 In this example, the same steps as those in Example 1 were taken to form a copper base plating layer, a silver strike plating layer, a selenium-containing silver plating layer, and a surface silver plating layer. The formed metal substrate was further given a bright plating.
すなわち前記工程の後に、被めつき金属基体
を、セレンを１〔ppm〕程含む銀シアン浴（温度
25（℃）中に浸漬し、工程において形成された
銀めつき層上に、厚さ0.5〔μm〕程の光沢を有す
る銀めつき層を形成した。 That is, after the above step, the coated metal substrate is placed in a silver cyanide bath containing about 1 ppm of selenium (temperature
A silver-plated layer having a gloss of about 0.5 [μm] in thickness was formed on the silver-plated layer formed in the process by dipping in water at 25 (°C).
このようにして形成された銀めつき層構成によ
れば、銀ストライクめつき層によつて下地銅めつ
き層及び金属基体に対して十分強固な密着を得、
本発明にかかるセレンを含む銀めつき層によつて
高い下地保護性及び半田付け性を得、更に表面銀
めつき層によつて所望の光沢が与えられる。 According to the silver plating layer structure formed in this way, the silver strike plating layer provides sufficiently strong adhesion to the underlying copper plating layer and the metal substrate,
The selenium-containing silver plating layer according to the present invention provides high base protection and solderability, and the surface silver plating layer provides desired gloss.
実施例 ３
本実施例においては、前記実施例１における工
程と工程、すなわち銀ストライクめつき処理
とセレンを含む銀めつき処理との間に、純銀めつ
き処理工程を挿入した。Example 3 In this example, a pure silver plating process was inserted between the steps in Example 1, that is, the silver strike plating process and the selenium-containing silver plating process.
すなわち、前記銀ストライクめつき処理の終了
した被めつき金属基体を、温度25〔℃〕程の銀シ
アン浴へ浸漬し、銀ストライクめつき層上に厚さ
1.0〔μm〕程の銀めつき層を形成した。しかる後、
前記実施例１の工程，と同様の手段により、
かかる銀めつき層上にセレンを含む銀めつき層及
び表面銀めつき層を形成した。 That is, the plated metal substrate that has been subjected to the silver strike plating process is immersed in a silver cyanide bath at a temperature of about 25 [°C], and a thickness of
A silver plating layer of about 1.0 [μm] was formed. After that,
By the same means as in the process of Example 1,
A selenium-containing silver plating layer and a surface silver plating layer were formed on the silver plating layer.
このようにして銀ストライクめつき層とセレン
を含む銀めつき層との間に配設された銀めつき層
は、下地金属（下地銅めつき層）の表面への拡散
を抑制し、表面銀めつき層の変色及び耐蝕性、耐
熱性等の諸機能特性の劣化を防止する。 The silver plating layer disposed between the silver strike plating layer and the selenium-containing silver plating layer in this way suppresses the diffusion of the base metal (base copper plating layer) to the surface, and Prevents discoloration of the silver plating layer and deterioration of various functional properties such as corrosion resistance and heat resistance.
実施例 ４
本実施例においては、前記実施例１における工
程のセレン含有銀シアン浴を、低シアン浴に変
更して、銀ストライクめつき層上にセレンを含む
めつき層を形成した。Example 4 In this example, the selenium-containing silver cyanide bath used in the process of Example 1 was changed to a low cyanide bath, and a selenium-containing plating layer was formed on the silver strike plating layer.
すなわち、前記銀ストライクめつき処理の終了
した後めつき金属基体を、セレンを５〔ppm〕含
む温度70〔℃〕程のピロリン酸カリウム
（K4O2P7）と銀シアン塩との混合浴に浸漬し、銀
ストライクめつき層上に厚さ2.0〔μm〕の、セレ
ンを含む銀めつき層を形成した。かかる場合前記
ピロリン酸カリウムの濃度は、90〔ｇ／〕とさ
れ、銀シアン塩の濃度は100〔ｇ／〕とされた。
しかる後、前記実施例１と同様に表面銀めつき層
を形成した。 That is, after the silver strike plating process has been completed, the plated metal substrate is mixed with potassium pyrophosphate (K 4 O 2 P 7 ) and silver cyanide at a temperature of about 70 [°C] containing 5 [ppm] of selenium. A 2.0 [μm] thick silver plating layer containing selenium was formed on the silver strike plating layer by immersing it in a bath. In this case, the concentration of potassium pyrophosphate was 90 [g/], and the concentration of silver cyanide salt was 100 [g/].
Thereafter, a surface silver plating layer was formed in the same manner as in Example 1 above.
このように、低シアン浴を使用して形成された
セレンを含む銀めつき層は、前記実施例１と同等
以上の下地保護性、耐酸化性の改善を実現するこ
とができた。 As described above, the selenium-containing silver plating layer formed using the low cyanide bath was able to achieve improvements in base protection properties and oxidation resistance equivalent to or greater than those in Example 1.
以上のように、本発明によれば、金属基体上に
形成される銀めつき層を、少なくとも例えばセレ
ンを含む第１の銀めつき層と当該第１のめつき層
を覆う第２の銀めつき層とから構成することによ
り、当該金属基体への半田付け性が大幅に改善さ
れ、しかも当該銀めつき層のめつき厚の低減化を
図ることができる。 As described above, according to the present invention, a silver plating layer formed on a metal substrate is formed by at least a first silver plating layer containing, for example, selenium, and a second silver plating layer covering the first silver plating layer. By comprising a plating layer, the solderability to the metal substrate is greatly improved, and the plating thickness of the silver plating layer can be reduced.
したがつて、本発明による銀めつき処理が施さ
れた金属基体を使用して構成される電子部品、例
えば半導体装置は、前記高い半田付け性によつて
もたらされる半導体素子固着性、リード線接続性
の向上による製造歩留りの向上、並びに前記銀め
つき厚の低減化によつてもたらされる低価格化に
よつて、高い信頼性を有する製品が安価に提供さ
れる。 Therefore, electronic components such as semiconductor devices constructed using a metal substrate subjected to silver plating according to the present invention have excellent semiconductor element fixing properties and lead wire connections brought about by the high solderability. Products with high reliability can be provided at low cost due to improved manufacturing yield due to improved properties and lower prices brought about by reducing the silver plating thickness.
なお、以上の実施例にあつては、酸化増量を抑
制し、半田付け性の改善を図る銀めつき層構成と
して、セレンを２〜1000〔ppm〕含有する銀シア
ン浴を用いて形成され、成膜中にセレンを40〜
10000〔ppm〕含む銀めつき層を掲げて説明を行な
つたが、本発明はこれに限られるものではなく、
前記セレンの他、アンチモン（Sb）、銅（Cu）、
ゴバルト（Co）、亜鉛（Zn）、テルル（Te）、イ
ンジウム（In）から選択された物質を単体または
複数種添加した銀めつき浴を用いて形成される銀
めつき層でも同様の効果を得ることができる。か
かる場合も添加物の銀めつき層中への析出量は40
〜10000〔ppm〕とされる。 In addition, in the above examples, the silver plating layer structure for suppressing oxidation weight gain and improving solderability is formed using a silver cyanide bath containing 2 to 1000 [ppm] selenium. 40~40% selenium during film formation
Although the explanation has been given using a silver plating layer containing 10,000 [ppm], the present invention is not limited to this.
In addition to the above selenium, antimony (Sb), copper (Cu),
A similar effect can be achieved with a silver plating layer formed using a silver plating bath containing one or more substances selected from Gobalt (Co), zinc (Zn), tellurium (Te), and indium (In). Obtainable. In such cases, the amount of additives deposited in the silver plating layer is 40%.
~10000 [ppm].
また本発明は、前記半導体集積回路装置に適用
されるリードフレーム、端子等に限定されるもの
ではなく、個別トランジスタ等に適用される金属
ステム等半田付けあるいは鑞付け処理がなされ、
且つ高い信頼度を要求される電子部品用金属部材
に適用され得る。 Furthermore, the present invention is not limited to lead frames, terminals, etc. applied to the semiconductor integrated circuit device, but also metal stems applied to individual transistors etc., which are soldered or brazed.
Moreover, it can be applied to metal members for electronic components that require high reliability.
第１図ａ〜ｄは、本発明の第１の実施例にかか
るめつめ処理工程を示す断面図、第２図は本発明
にかかる銀めつき層と従来法によつて形成された
銀めつき層との酸化増量特性を示すグラフであ
る。
第１図において、１１……金属基体、１２……
下地銅めつき層、１３……銀ストライクめつき
層、１４……セレンを含む銀めつき層、１５……
銀めつき層、である。
1A to 1D are cross-sectional views showing the plating process according to the first embodiment of the present invention, and FIG. It is a graph showing oxidation weight gain characteristics with a layer. In FIG. 1, 11...metal base, 12...
Base copper plating layer, 13...Silver strike plating layer, 14...Silver plating layer containing selenium, 15...
It is a silver plating layer.
Claims (1)
る被覆が施されてなる電子部品用金属部材におい
て、前記銀めつき層の下層にセレン、アンチモ
ン、銅、コバルト、亜鉛、テルル及びインジウム
から選択された少なくとも一つの物質を40〜
10000［ppm］含有する銀めつき層を施してなるこ
とを特徴とする電子部品用金属部材。1. In a metal member for electronic components in which a coating consisting of a silver plating layer is applied as a surface layer on a metal substrate, the layer below the silver plating layer is selected from selenium, antimony, copper, cobalt, zinc, tellurium, and indium. 40 ~ at least one substance
A metal member for electronic components, characterized by being coated with a silver plating layer containing 10,000 [ppm].
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6981381A JPS57184244A (en) | 1981-05-08 | 1981-05-08 | Metallic member for electronic parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6981381A JPS57184244A (en) | 1981-05-08 | 1981-05-08 | Metallic member for electronic parts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57184244A JPS57184244A (en) | 1982-11-12 |
| JPS6344299B2 true JPS6344299B2 (en) | 1988-09-05 |
Family
ID=13413568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6981381A Granted JPS57184244A (en) | 1981-05-08 | 1981-05-08 | Metallic member for electronic parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57184244A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010199166A (en) * | 2009-02-24 | 2010-09-09 | Panasonic Corp | Lead frame for optical semiconductor apparatus, and method of manufacturing the same |
| CN110265376A (en) | 2018-03-12 | 2019-09-20 | 意法半导体股份有限公司 | Lead frame surface finishing |
| US11735512B2 (en) | 2018-12-31 | 2023-08-22 | Stmicroelectronics International N.V. | Leadframe with a metal oxide coating and method of forming the same |
-
1981
- 1981-05-08 JP JP6981381A patent/JPS57184244A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57184244A (en) | 1982-11-12 |
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