JPH06196349A - Copper lead frame material for tantalum capacitor and manufacture thereof - Google Patents
Copper lead frame material for tantalum capacitor and manufacture thereofInfo
- Publication number
- JPH06196349A JPH06196349A JP4344143A JP34414392A JPH06196349A JP H06196349 A JPH06196349 A JP H06196349A JP 4344143 A JP4344143 A JP 4344143A JP 34414392 A JP34414392 A JP 34414392A JP H06196349 A JPH06196349 A JP H06196349A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- tin
- layer
- plating layer
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半田濡れ性及び耐熱剥
離性が優れたタンタルコンデンサ用銅系リードフレーム
材及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a copper-based lead frame material for a tantalum capacitor having excellent solder wettability and heat-resistant peeling property, and a method for producing the same.
【０００２】[0002]
【従来の技術】一般的に、タンタルコンデンサはコンデ
ンサ部とリードフレーム部とに分けられる。また、リー
ドフレーム材料としては、銅合金系のものと、ニッケル
合金系のものとがある。このうち、リードフレーム部に
厳しい加工性が要求される用途については、主に、銅系
合金である洋白（Ｃｕ−Ｎｉ−Ｚｎ系合金）が使用され
ている。2. Description of the Related Art Generally, a tantalum capacitor is divided into a capacitor section and a lead frame section. Further, as the lead frame material, there are a copper alloy type and a nickel alloy type. Among these, nickel-white (Cu-Ni-Zn-based alloy), which is a copper-based alloy, is mainly used for applications in which the lead frame portion requires severe workability.
【０００３】タンタルコンデンサは、その製造組み立て
工程において、コンデンサ部を樹脂でモールドした後、
樹脂を硬化させるために１８０℃の温度で数時間の熱処
理が施される。その後、製品として出荷され、電子部品
の一つとして基板上に半田付けされる。このため、一般
的に、タンタルコンデンサ用リードフレーム材には１８
０℃の温度で数時間の熱処理を施した後も優れた半田濡
れ性及び耐剥離性を有することが要求される。In the manufacturing and assembling process of a tantalum capacitor, after molding the capacitor part with resin,
Heat treatment is carried out at a temperature of 180 ° C. for several hours to cure the resin. After that, it is shipped as a product and soldered on a substrate as one of electronic components. For this reason, in general, the lead frame material for tantalum capacitors has 18
It is required to have excellent solder wettability and peeling resistance even after heat treatment at a temperature of 0 ° C. for several hours.
【０００４】従来のタンタルコンデンサ用銅系リードフ
レーム材としては、洋白にニッケルを下地めっきした
後、更に錫又は半田めっきをしたもの、又は洋白にニッ
ケル下地めっき及び銅めっきを順次施し、更に錫又は半
田をめっきしたものが使用されている。As a conventional copper-based lead frame material for tantalum capacitors, nickel-plated nickel underlayer is plated with tin or solder, or nickel-plated nickel underplating and copper are sequentially plated, Those plated with tin or solder are used.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上述し
た洋白にニッケル下地めっきをした後、更に錫又は半田
めっきをしたものは、熱処理すると錫とニッケルとの金
属間化合物の生成により表面の錫層が失われ、半田濡れ
性が低下するという難点がある。このため、熱処理後で
も優れた半田濡れ性を得るためには、熱処理後も錫層を
確保するために、錫めっき層を厚く形成する必要があ
り、製品コストの上昇を招来する。However, after the nickel undercoat is plated on the nickel silver and then tin or solder is plated, heat treatment results in the formation of an intermetallic compound of tin and nickel on the surface of the tin layer. Is lost and solder wettability deteriorates. Therefore, in order to obtain excellent solder wettability even after the heat treatment, it is necessary to form a thick tin plating layer in order to secure the tin layer even after the heat treatment, resulting in an increase in product cost.
【０００６】一方、洋白にニッケル下地めっき及び銅め
っきを順次施し、更に錫又は半田をめっきしたものも、
熱処理によって錫と銅との金属間化合物層の生成による
錫層の減少で半田濡れ性が低下するという難点があると
共に、熱処理により生成される錫と銅との金属間化合物
層（ε相；Ｃｕ3 Ｓｎ）と銅めっき層との間で剥離が生
じやすいという問題点がある。[0006] On the other hand, nickel-plated nickel-base plating and copper plating are sequentially applied on nickel silver, and tin or solder is also plated,
The heat treatment causes a decrease in the tin layer due to the formation of an intermetallic compound layer of tin and copper, which lowers the solder wettability, and the intermetallic compound layer of the tin and copper (ε phase; Cu) produced by the heat treatment. 3 Sn) and the copper plating layer are liable to peel off.
【０００７】本発明はかかる問題点に鑑みてなされたも
のであって、熱処理後も良好な半田濡れ性を確保できる
と共に、耐熱剥離性も優れたタンタルコンデンサ用銅系
リードフレーム材及びその製造方法を提供することを目
的とする。The present invention has been made in view of the above problems, and it is possible to ensure good solder wettability even after heat treatment and to provide a copper lead frame material for a tantalum capacitor excellent in heat-resistant peeling property and a method for manufacturing the same. The purpose is to provide.
【０００８】[0008]
【課題を解決するための手段】本発明に係るタンタルコ
ンデンサ用銅系リードフレーム材は、洋白からなる基材
と、この基材上に形成されたニッケルめっき層と、この
ニッケルめっき層の上に０．２乃至２．０μｍの厚さで
形成された錫及び銅の金属間化合物層と、この金属間化
合物層の上に形成された錫又は半田からなるめっき層と
を有することを特徴とする。A copper-based lead frame material for a tantalum capacitor according to the present invention comprises a base material made of nickel silver, a nickel plating layer formed on the base material, and a nickel plating layer on the nickel plating layer. And an intermetallic compound layer of tin and copper formed to a thickness of 0.2 to 2.0 μm, and a plating layer of tin or solder formed on the intermetallic compound layer. To do.
【０００９】本発明に係るタンタルコンデンサ用銅系リ
ードフレーム材の製造方法は、洋白からなる基材の表面
上にニッケルめっき層を形成する工程と、このニッケル
めっき層上に０．１乃至１．０μｍの厚さの銅めっき層
を形成する工程と、この銅めっき層上に錫又は半田めっ
き層を形成する工程と、リフロー処理により前記錫又は
半田めっき層と前記ニッケルめっき層との間に０．２乃
至２．０μｍの厚さの錫及び銅の金属間化合物層を形成
する工程とを有することを特徴とする。A method of manufacturing a copper-based lead frame material for tantalum capacitors according to the present invention comprises a step of forming a nickel plating layer on the surface of a base material made of nickel silver, and 0.1 to 1 on the nickel plating layer. A step of forming a copper plating layer having a thickness of 0.0 μm, a step of forming a tin or solder plating layer on the copper plating layer, and a step of reflowing between the tin or solder plating layer and the nickel plating layer. And a step of forming an intermetallic compound layer of tin and copper having a thickness of 0.2 to 2.0 μm.
【００１０】また、本発明に係るタンタルコンデンサ用
銅系リードフレーム材の製造方法は、洋白からなる基材
の表面上にニッケルめっき層を形成する工程と、このニ
ッケルめっき層上に０．１乃至１．０μｍの厚さの銅め
っき層を形成する工程と、溶融錫めっき又は溶融半田め
っきによりこの錫又は半田めっき層と前記ニッケルめっ
き層との間に０．２乃至２．０μｍの厚さの錫及び銅の
金属間化合物層を形成する工程とを有することを特徴と
する。The method of manufacturing a copper-based lead frame material for tantalum capacitors according to the present invention comprises a step of forming a nickel plating layer on the surface of a base material made of nickel silver, and a step of forming a nickel plating layer on the nickel plating layer. A step of forming a copper plating layer having a thickness of 1.0 to 1.0 μm, and a thickness of 0.2 to 2.0 μm between the tin or solder plating layer and the nickel plating layer by hot-dip tin plating or hot-dip solder plating. And a step of forming an intermetallic compound layer of tin and copper.
【００１１】なお、本願においてニッケルとは、純ニッ
ケルの他にニッケル合金を含むものとする。In the present application, nickel includes nickel alloy in addition to pure nickel.
【００１２】[0012]
【作用】本発明に係るタンタルコンデンサ用銅系リード
フレーム材は、錫又は半田めっき層とニッケルめっき層
との間に、厚さが０．２乃至２．０μｍの錫と銅との金
属間化合物を有する。このため、錫と銅との金属間化合
物層がバリヤー的に作用して錫とニッケルとの接触を遮
断し、熱処理を受けた場合に錫とニッケルとの金属間化
合物の生成を防止する。これにより、熱処理後でもその
表面に錫又は半田層を確保することができるため、錫又
は半田めっき層を厚くしなくても、熱処理後も良好な半
田濡れ性を得ることができる。The copper-based lead frame material for tantalum capacitors according to the present invention is an intermetallic compound of tin and copper having a thickness of 0.2 to 2.0 μm between a tin or solder plating layer and a nickel plating layer. Have. Therefore, the intermetallic compound layer of tin and copper acts as a barrier to block the contact between tin and nickel and prevent the formation of the intermetallic compound of tin and nickel when subjected to heat treatment. With this, since the tin or solder layer can be secured on the surface even after the heat treatment, good solder wettability can be obtained even after the heat treatment without increasing the thickness of the tin or solder plating layer.
【００１３】錫と銅との金属間化合物層の厚さは、０．
２乃至２．０μｍが適切である。錫と銅との金属間化合
物層の厚さが０．２μｍ未満の場合は、前述のバリヤー
的作用が少なく、熱処理を受けた場合に錫とニッケルと
の金属間化合物の生成を十分に防止することができな
い。このため、熱処理後に良好な半田濡れ性を維持する
ことができなくなる。The thickness of the intermetallic compound layer of tin and copper is 0.
2 to 2.0 μm is suitable. When the thickness of the intermetallic compound layer of tin and copper is less than 0.2 μm, the above-mentioned barrier action is small, and the formation of the intermetallic compound of tin and nickel is sufficiently prevented when subjected to heat treatment. I can't. Therefore, good solder wettability cannot be maintained after the heat treatment.
【００１４】一方、錫と銅との金属間化合物層の厚さを
２．０μｍを超えて厚くしても、それによる特性の改善
効果は小さく、コストの上昇を招来する。このため、こ
の金属間化合物層の厚さは２．０μｍ以下とする。On the other hand, even if the thickness of the intermetallic compound layer of tin and copper is made thicker than 2.0 μm, the effect of improving the characteristics by that is small and the cost is increased. Therefore, the thickness of the intermetallic compound layer is set to 2.0 μm or less.
【００１５】なお、本発明に係るタンタルコンデンサ用
の銅系リードフレーム材は、銅層を有してしないため、
一般的に、銅層と錫層との金属間化合物層（ε相）との
間で起こるといわれている剥離は生じない。このため、
耐熱剥離性が優れている。The copper-based lead frame material for tantalum capacitors according to the present invention does not have a copper layer.
Generally, peeling, which is said to occur between the copper layer and the tin layer and the intermetallic compound layer (ε phase), does not occur. For this reason,
Excellent heat-resistant peeling property.
【００１６】上述の優れた特性を有するタンタルコンデ
ンサ用銅系リードフレーム材は、洋白からなる基材にニ
ッケルめっき層を形成し、０．１乃至１．０μｍの厚さ
の銅めっき層を形成した後、更に錫又は半田のめっき層
を形成し、リフロー処理により前述の錫及び銅の金属間
化合物層を形成するか、又は前記銅めっき層の上に、溶
融錫めっき又は半田めっきを施して、前述の金属間化合
物層を形成することにより、製造することができる。In the copper-based lead frame material for tantalum capacitors having the above-mentioned excellent characteristics, a nickel plating layer is formed on a base material made of nickel silver, and a copper plating layer having a thickness of 0.1 to 1.0 μm is formed. After that, a tin or solder plating layer is further formed, and the above-mentioned tin and copper intermetallic compound layer is formed by reflow treatment, or hot-dip tin plating or solder plating is applied on the copper plating layer. Can be manufactured by forming the above-mentioned intermetallic compound layer.
【００１７】この場合に、リフロー処理又は溶融めっき
処理により、全ての銅めっき層を錫と銅との金属間化合
物層に変化させることが重要である。このため、前記銅
めっき層の厚さは、３００℃前後で数秒間のリフロー処
理で前述の錫と銅との金属間化合物を形成すること、又
は溶融めっきの製造上の制約等を勘案して、０．１乃至
１．０μｍとする。In this case, it is important to change all the copper plating layers into the intermetallic compound layers of tin and copper by the reflow treatment or the hot dipping treatment. Therefore, the thickness of the copper plating layer is determined by forming the above-mentioned intermetallic compound of tin and copper by a reflow treatment at about 300 ° C. for several seconds, or taking into consideration the restrictions on the production of hot dip plating. , 0.1 to 1.0 μm.
【００１８】なお、本願発明方法において、洋白からな
る基材にニッケルめっきを施す前に銅めっきを行って
も、上述の特性に差し支えることはない。In the method of the present invention, even if the nickel-plated base material is plated with copper before being plated with nickel, the above-mentioned characteristics are not adversely affected.
【００１９】[0019]
【実施例】以下、本発明の実施例について、具体的に説
明する。EXAMPLES Examples of the present invention will be specifically described below.
【００２０】実施例Ａ，Ｂ，Ｃとして、図１に示すよう
に、板厚が０．３ｍｍの洋白からなる基材４に厚さが
２．０μｍのニッケルめっき層２を形成した後、厚さが
夫々０．１μｍ、０．５μｍ、１．０μｍの銅めっき層
を形成し、更に後工程のリフロー処理後に残存する錫め
っき層１の厚さが２．０μｍとなるように、厚さが夫々
２．２μｍ、３．０μｍ、４．０μｍの錫めっき層１を
形成した後、３００℃の温度で５０秒間のリフロー処理
を施し、錫めっき層１とニッケル層２との間に錫と銅と
の金属間化合物層３を形成したものを用意した。As Examples A, B, and C, as shown in FIG. 1, after a nickel plating layer 2 having a thickness of 2.0 μm was formed on a base material 4 made of nickel silver having a thickness of 0.3 mm, The copper plating layers having the thicknesses of 0.1 μm, 0.5 μm, and 1.0 μm are formed, and the thickness of the tin plating layer 1 remaining after the reflow treatment in the subsequent step is 2.0 μm. After forming the tin plating layer 1 having a thickness of 2.2 μm, 3.0 μm and 4.0 μm, respectively, a reflow treatment was performed at a temperature of 300 ° C. for 50 seconds to remove tin between the tin plating layer 1 and the nickel layer 2. The thing which formed the intermetallic compound layer 3 with copper was prepared.
【００２１】また、比較例Ｄ，Ｅとして、板厚が０．３
ｍｍの洋白からなる基材に厚さが２．０μｍのニッケル
めっき層を形成した後、厚さが夫々０．０５μｍ、２，
０μｍの銅めっき層を形成し、更にリフロー処理後の錫
めっき層の厚さが２．０μｍとなるように、厚さが夫々
２．１μｍ、６．０μｍの錫めっき層を形成した後、リ
フロー処理を施し、錫とニッケル層との間に厚さが夫々
０．１μｍ、４．０μｍの錫と銅との金属間化合物層を
形成したものを用意した。Further, as Comparative Examples D and E, the plate thickness is 0.3.
After forming a nickel plating layer having a thickness of 2.0 μm on a base material made of nickel silver having a thickness of 2.0 mm, the thickness is 0.05 μm,
After forming a copper plating layer of 0 μm and further forming tin plating layers of 2.1 μm and 6.0 μm, respectively, so that the thickness of the tin plating layer after the reflow treatment is 2.0 μm, the reflow is performed. A treatment was performed to form an intermetallic compound layer of tin and copper having a thickness of 0.1 μm and a thickness of 4.0 μm between the tin and nickel layers, respectively.
【００２２】更に、従来例Ｆとして、図２に示すよう
に、板厚が０．３ｍｍの洋白からなる基材４に厚さが
２．０μｍのニッケルめっき層２を形成した後、２．０
μｍの厚さで錫めっき層１を形成したものを用意した。
更にまた、従来例Ｇとして、図３に示すように、板厚が
０．３ｍｍの洋白からなる基材４に厚さが２．０μｍの
ニッケルめっき層２を形成した後、厚さが１．０μｍの
銅めっき層５を形成し、更に厚さが２．０μｍの錫めっ
き層１を形成したものを用意した。Further, as a conventional example F, as shown in FIG. 2, after forming a nickel plating layer 2 having a thickness of 2.0 μm on a base material 4 made of nickel silver having a plate thickness of 0.3 mm, 2. 0
The thing which formed the tin plating layer 1 with the thickness of μm was prepared.
Furthermore, as a conventional example G, as shown in FIG. 3, after forming a nickel plating layer 2 having a thickness of 2.0 μm on a base material 4 made of nickel silver having a plate thickness of 0.3 mm, the thickness is 1 μm. A copper plating layer 5 having a thickness of 0.0 μm and a tin plating layer 1 having a thickness of 2.0 μm were further prepared.
【００２３】得られたリードフレーム材の各めっき層の
厚さ及び金属間化合物層の厚さを断面観察により求め
た。その結果を、下記表１に示す。なお、上述のニッケ
ルめっき、銅めっき及び錫めっき時のめっき条件を下記
表２に示す。The thickness of each plating layer and the thickness of the intermetallic compound layer of the obtained lead frame material were determined by observing the cross section. The results are shown in Table 1 below. The plating conditions for the above nickel plating, copper plating and tin plating are shown in Table 2 below.
【００２４】[0024]
【表１】 [Table 1]
【００２５】[0025]
【表２】 [Table 2]
【００２６】また、各実施例、比較例及び従来例のリー
ド材を１８０℃の温度で熱処理した後、その半田濡れ性
及び耐剥離性を調べた。Further, the lead materials of the respective examples, comparative examples and conventional examples were heat-treated at a temperature of 180 ° C., and then their solder wettability and peeling resistance were examined.
【００２７】但し、半田濡れ性試験は以下の条件で行な
った。 試験方法；メニスコグラフ法（ＭＩＬ−ＳＴＤ−２０２
Ｅに基づく） 評価方法；図４に示すように、半田浴中に浸漬後、濡れ
の力（半田引き込み力）が０に回復するまでの時間（以
下、濡れ時間という）を測定した。濡れ時間が短いほど
半田濡れ性がよいといえる。 試験装置；ＳＡＴ−２０００（レスカ社製） 浸漬速度；２５ｍｍ／秒 浸漬深さ；２ｍｍ 浸漬時間；５秒間 半田組成；Ｓｎ／Ｐｂ＝６／４ 半田温度；２３０℃ フラックス；非活性ロジン系フラックス アルファ−１
００（日本アルファメタルズ社製）。However, the solder wettability test was conducted under the following conditions. Test method: Meniscograph method (MIL-STD-202
(Based on E) Evaluation method: As shown in FIG. 4, after immersion in a solder bath, the time until the wetting force (solder drawing force) recovers to 0 (hereinafter referred to as wetting time) was measured. It can be said that the shorter the wetting time, the better the solder wettability. Test device; SAT-2000 (manufactured by Reska) Immersion speed; 25 mm / sec Immersion depth; 2 mm Immersion time; 5 seconds Solder composition; Sn / Pb = 6/4 Solder temperature; 230 ° C. Flux; Inactive rosin-based flux alpha -1
00 (manufactured by Japan Alpha Metals).
【００２８】また、耐剥離製試験は、１８０℃で熱処理
した試験材を用いて、曲げ半径（Ｒ）が０．５ｍｍで９
０°曲げを行い、また平板状に戻す動作を２回行なった
後、ルーペを用いて剥離の有無を調べた。In the peeling resistance test, a test material heat-treated at 180 ° C. was used and the bending radius (R) was 0.5 mm.
After performing 0 ° bending and returning to a flat plate shape twice, the presence or absence of peeling was examined using a loupe.
【００２９】熱処理後のメニスコグラフ法による半田濡
れ性の試験（半田濡れ時間）の結果を下記表３に示す。
但し、浸漬時間が５秒までの間に濡れの力が０まで回復
しない場合は、半田濡れ時間を“＞５”として示した。The results of the solder wettability test (solder wetting time) by the meniscograph method after heat treatment are shown in Table 3 below.
However, when the wetting force did not recover to 0 within the immersion time of 5 seconds, the solder wetting time was shown as ">5".
【００３０】この表３から明らかなように、従来例Ｆ，
Ｇは熱処理時間が１時間を過ぎると半田濡れ性が低下し
た。これに対し、本発明方法により製造した実施例Ａ，
Ｂ，Ｃのリードフレーム材と比較例Ｅのリードフレーム
材は、熱処理時間が９時間を超えても良好な半田濡れ性
を示した。これは、従来例Ｆ，Ｇが熱処理により錫層が
減少したのに対して、実施例Ａ，Ｂ，Ｃ及び比較例Ｅは
熱処理後も錫層が減少していないためである。また、比
較例Ｄは熱処理時間が９時間に達すると錫とニッケルと
の接触を遮断して錫とニッケルとの金属間化合物の生成
を防止した効果が薄れ、半田濡れ性が低下した。As is clear from Table 3, the conventional example F,
For G, the solder wettability deteriorated when the heat treatment time exceeded 1 hour. On the other hand, Example A manufactured by the method of the present invention,
The lead frame materials of B and C and the lead frame material of Comparative Example E showed good solder wettability even when the heat treatment time exceeded 9 hours. This is because the tin layers were reduced in the conventional examples F and G by the heat treatment, whereas the tin layers were not reduced in the examples A, B and C and the comparative example E even after the heat treatment. Further, in Comparative Example D, when the heat treatment time reached 9 hours, the effect of blocking the contact between tin and nickel and preventing the formation of the intermetallic compound of tin and nickel was weakened, and the solder wettability was lowered.
【００３１】[0031]
【表３】 [Table 3]
【００３２】次に、耐熱剥離試験を行なった結果を下記
表４に示す。但し、表４において、剥離が認められない
場合を○、剥離が認められる場合を×で示した。Next, the results of the heat-resistant peeling test are shown in Table 4 below. However, in Table 4, the case where peeling is not observed is indicated by O, and the case where peeling is observed is indicated by X.
【００３３】[0033]
【表４】 [Table 4]
【００３４】この表４から明らかなように、従来例Ｇは
熱処理を９時間行なうと剥離が生じたのに対し、実施例
Ａ，Ｂ，Ｃ及び比較例Ｄ，Ｅはいずれも熱処理時間は９
時間でも剥離が生じなかった。As is clear from Table 4, in the conventional example G, peeling occurred when the heat treatment was carried out for 9 hours, whereas in the examples A, B and C and the comparative examples D and E, the heat treatment time was 9 hours.
No peeling occurred even in time.
【００３５】[0035]
【発明の効果】以上説明したように本発明に係るタンタ
ルコンデンサ用銅系リードフレーム材は、基材上に形成
されたニッケルめっき層と錫又は半田めっき層との間に
所定の厚さで形成された錫及び銅の金属間化合物層を有
するから、耐熱剥性が優れ、熱処理後も良好な半田濡れ
性を示す。As described above, the copper lead frame material for tantalum capacitors according to the present invention is formed with a predetermined thickness between the nickel plating layer and the tin or solder plating layer formed on the base material. Since it has the formed intermetallic compound layer of tin and copper, it has excellent heat-resistant peelability and shows good solder wettability even after heat treatment.
【００３６】また、本発明方法によれば、ニッケルめっ
き層上に所定の厚さで銅めっき層を形成し、更に錫又は
半田のめっき層を形成した後リフロー処理により錫及び
銅の金属間化合物層を形成するか、又は、前記銅めっき
層上に溶融錫若しくは半田めっきを施して錫及び銅の金
属間化合物層を形成するから、上述のタンタルコンデン
サ用銅系リードフレーム材を容易に製造することができ
る。According to the method of the present invention, a copper plating layer having a predetermined thickness is formed on the nickel plating layer, and a tin or solder plating layer is further formed. A layer is formed, or molten tin or solder plating is applied on the copper plating layer to form an intermetallic compound layer of tin and copper. Therefore, the above-mentioned copper lead frame material for tantalum capacitors can be easily manufactured. be able to.
【図１】本発明の実施例に係るリードフレーム材を示す
断面図である。FIG. 1 is a cross-sectional view showing a lead frame material according to an embodiment of the present invention.
【図２】従来例のリードフレーム材を示す断面図であ
る。FIG. 2 is a sectional view showing a conventional lead frame material.
【図３】他の従来例のリードフレーム材を示す断面図で
ある。FIG. 3 is a cross-sectional view showing another conventional lead frame material.
【図４】半田濡れ性の評価方法を示すグラフ図である。FIG. 4 is a graph showing a method of evaluating solder wettability.
１；錫めっき層 ２；ニッケルめっき層 ３；金属間化合物層 ４；基材 ５；銅めっき層 1; tin plating layer 2; nickel plating layer 3; intermetallic compound layer 4; base material 5; copper plating layer
Claims (3)
されたニッケルめっき層と、このニッケルめっき層の上
に０．２乃至２．０μｍの厚さで形成された錫及び銅の
金属間化合物層と、この金属間化合物層の上に形成され
た錫又は半田からなるめっき層とを有することを特徴と
するタンタルコンデンサ用銅系リードフレーム材。1. A base material made of nickel silver, a nickel plating layer formed on the base material, and tin and copper formed on the nickel plating layer to a thickness of 0.2 to 2.0 μm. And a plating layer made of tin or solder formed on the intermetallic compound layer, and a copper-based leadframe material for a tantalum capacitor.
っき層を形成する工程と、このニッケルめっき層上に
０．１乃至１．０μｍの厚さの銅めっき層を形成する工
程と、この銅めっき層上に錫又は半田めっき層を形成す
る工程と、リフロー処理により前記錫又は半田めっき層
と前記ニッケルめっき層との間に０．２乃至２．０μｍ
の厚さの錫及び銅の金属間化合物層を形成する工程とを
有することを特徴とするタンタルコンデンサ用銅系リー
ドフレーム材の製造方法。2. A step of forming a nickel plating layer on the surface of a base material made of nickel silver, and a step of forming a copper plating layer having a thickness of 0.1 to 1.0 μm on the nickel plating layer, 0.2 to 2.0 μm between the tin or solder plating layer and the nickel plating layer by a step of forming a tin or solder plating layer on the copper plating layer and a reflow process.
And a step of forming an intermetallic compound layer of tin and copper having a thickness of 5 mm, and a method of manufacturing a copper-based lead frame material for a tantalum capacitor.
っき層を形成する工程と、このニッケルめっき層上に
０．１乃至１．０μｍの厚さの銅めっき層を形成する工
程と、溶融錫めっき又は溶融半田めっきによりこの錫又
は半田めっき層と前記ニッケルめっき層との間に０．２
乃至２．０μｍの厚さの錫及び銅の金属間化合物層を形
成する工程とを有することを特徴とするタンタルコンデ
ンサ用銅系リードフレーム材の製造方法。3. A step of forming a nickel plating layer on the surface of a base material made of nickel silver, and a step of forming a copper plating layer having a thickness of 0.1 to 1.0 μm on the nickel plating layer, By the hot-dip tin plating or the hot-dip solder plating, 0.2 is provided between the tin- or solder-plated layer and the nickel-plated layer.
A step of forming a tin-copper intermetallic compound layer having a thickness of 2.0 μm to 2.0 μm, and a method of manufacturing a copper-based lead frame material for a tantalum capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4344143A JPH06196349A (en) | 1992-12-24 | 1992-12-24 | Copper lead frame material for tantalum capacitor and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4344143A JPH06196349A (en) | 1992-12-24 | 1992-12-24 | Copper lead frame material for tantalum capacitor and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06196349A true JPH06196349A (en) | 1994-07-15 |
Family
ID=18366974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4344143A Pending JPH06196349A (en) | 1992-12-24 | 1992-12-24 | Copper lead frame material for tantalum capacitor and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06196349A (en) |
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