JPS6125226B2 - - Google Patents
Info
- Publication number
- JPS6125226B2 JPS6125226B2 JP2480278A JP2480278A JPS6125226B2 JP S6125226 B2 JPS6125226 B2 JP S6125226B2 JP 2480278 A JP2480278 A JP 2480278A JP 2480278 A JP2480278 A JP 2480278A JP S6125226 B2 JPS6125226 B2 JP S6125226B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor
- oxide film
- single crystal
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229910021426 porous silicon Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2480278A JPS54117690A (en) | 1978-03-03 | 1978-03-03 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2480278A JPS54117690A (en) | 1978-03-03 | 1978-03-03 | Production of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54117690A JPS54117690A (en) | 1979-09-12 |
| JPS6125226B2 true JPS6125226B2 (US06633600-20031014-M00021.png) | 1986-06-14 |
Family
ID=12148317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2480278A Granted JPS54117690A (en) | 1978-03-03 | 1978-03-03 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54117690A (US06633600-20031014-M00021.png) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63190905A (ja) * | 1987-01-31 | 1988-08-08 | Hiroshi Sato | 並列駆動油圧モ−タ装置および油圧モ−タ駆動車両 |
| JPS63172725U (US06633600-20031014-M00021.png) * | 1987-04-30 | 1988-11-09 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2480501A1 (fr) * | 1980-04-14 | 1981-10-16 | Thomson Csf | Dispositif semi-conducteur a grille profonde accessible par la surface et procede de fabrication |
-
1978
- 1978-03-03 JP JP2480278A patent/JPS54117690A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63190905A (ja) * | 1987-01-31 | 1988-08-08 | Hiroshi Sato | 並列駆動油圧モ−タ装置および油圧モ−タ駆動車両 |
| JPS63172725U (US06633600-20031014-M00021.png) * | 1987-04-30 | 1988-11-09 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54117690A (en) | 1979-09-12 |
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