JPS6125221B2 - - Google Patents
Info
- Publication number
- JPS6125221B2 JPS6125221B2 JP53024651A JP2465178A JPS6125221B2 JP S6125221 B2 JPS6125221 B2 JP S6125221B2 JP 53024651 A JP53024651 A JP 53024651A JP 2465178 A JP2465178 A JP 2465178A JP S6125221 B2 JPS6125221 B2 JP S6125221B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating film
- titanium
- gold
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000007747 plating Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 20
- 239000010931 gold Substances 0.000 description 20
- 229910052737 gold Inorganic materials 0.000 description 20
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- 239000010936 titanium Substances 0.000 description 13
- 229910052719 titanium Inorganic materials 0.000 description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- FHUGMWWUMCDXBC-UHFFFAOYSA-N gold platinum titanium Chemical compound [Ti][Pt][Au] FHUGMWWUMCDXBC-UHFFFAOYSA-N 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241001310793 Podium Species 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- FZQYVWUONRVDQB-UHFFFAOYSA-N gold titanium tungsten Chemical compound [Ti][W][Au] FZQYVWUONRVDQB-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2465178A JPS54117680A (en) | 1978-03-03 | 1978-03-03 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2465178A JPS54117680A (en) | 1978-03-03 | 1978-03-03 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54117680A JPS54117680A (en) | 1979-09-12 |
| JPS6125221B2 true JPS6125221B2 (fr) | 1986-06-14 |
Family
ID=12144034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2465178A Granted JPS54117680A (en) | 1978-03-03 | 1978-03-03 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54117680A (fr) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10941251B2 (en) | 2018-03-22 | 2021-03-09 | Momentive Performance Materials Inc. | Silicone polymer and composition comprising the same |
| US10968351B2 (en) | 2018-03-22 | 2021-04-06 | Momentive Performance Materials Inc. | Thermal conducting silicone polymer composition |
| US11319414B2 (en) | 2018-03-22 | 2022-05-03 | Momentive Performance Materials Inc. | Silicone polymer |
| US11472925B2 (en) | 2018-03-22 | 2022-10-18 | Momentive Performance Materials Inc. | Silicone polymer |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6112045A (ja) * | 1984-06-28 | 1986-01-20 | Oki Electric Ind Co Ltd | バンプ電極の形成方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52131455A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Semiconductor device |
-
1978
- 1978-03-03 JP JP2465178A patent/JPS54117680A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52131455A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10941251B2 (en) | 2018-03-22 | 2021-03-09 | Momentive Performance Materials Inc. | Silicone polymer and composition comprising the same |
| US10968351B2 (en) | 2018-03-22 | 2021-04-06 | Momentive Performance Materials Inc. | Thermal conducting silicone polymer composition |
| US11319414B2 (en) | 2018-03-22 | 2022-05-03 | Momentive Performance Materials Inc. | Silicone polymer |
| US11472925B2 (en) | 2018-03-22 | 2022-10-18 | Momentive Performance Materials Inc. | Silicone polymer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54117680A (en) | 1979-09-12 |
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