JPS6125220B2 - - Google Patents

Info

Publication number
JPS6125220B2
JPS6125220B2 JP52124505A JP12450577A JPS6125220B2 JP S6125220 B2 JPS6125220 B2 JP S6125220B2 JP 52124505 A JP52124505 A JP 52124505A JP 12450577 A JP12450577 A JP 12450577A JP S6125220 B2 JPS6125220 B2 JP S6125220B2
Authority
JP
Japan
Prior art keywords
circuit
diode
substrate
wiring layer
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52124505A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5458380A (en
Inventor
Hiroshi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12450577A priority Critical patent/JPS5458380A/ja
Publication of JPS5458380A publication Critical patent/JPS5458380A/ja
Publication of JPS6125220B2 publication Critical patent/JPS6125220B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP12450577A 1977-10-19 1977-10-19 Zener diode Granted JPS5458380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12450577A JPS5458380A (en) 1977-10-19 1977-10-19 Zener diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12450577A JPS5458380A (en) 1977-10-19 1977-10-19 Zener diode

Publications (2)

Publication Number Publication Date
JPS5458380A JPS5458380A (en) 1979-05-11
JPS6125220B2 true JPS6125220B2 (https=) 1986-06-14

Family

ID=14887141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12450577A Granted JPS5458380A (en) 1977-10-19 1977-10-19 Zener diode

Country Status (1)

Country Link
JP (1) JPS5458380A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
JPS59208787A (ja) * 1983-05-13 1984-11-27 Hitachi Ltd 等価ツエナ−ダイオ−ド
US5066991A (en) * 1989-12-26 1991-11-19 Motorola, Inc. Semiconductor diode and method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5257780A (en) * 1975-11-06 1977-05-12 Mitsubishi Electric Corp Semiconductor device
US4075649A (en) * 1975-11-25 1978-02-21 Siemens Corporation Single chip temperature compensated reference diode and method for making same

Also Published As

Publication number Publication date
JPS5458380A (en) 1979-05-11

Similar Documents

Publication Publication Date Title
US3461357A (en) Multilevel terminal metallurgy for semiconductor devices
US3566214A (en) Integrated circuit having a plurality of circuit element regions and conducting layers extending on both of the opposed common major surfaces of said circuit element regions
US4724475A (en) Semiconductor device
US5436497A (en) Semiconductor device having a plurality of vertical type transistors having non-intersecting interconnections
US3325706A (en) Power transistor
JPS6125220B2 (https=)
US3581166A (en) Gold-aluminum leadout structure of a semiconductor device
JP2022032542A (ja) 半導体装置
GB2105109A (en) Thermosensitive semiconductor devices
JPS6159535B2 (https=)
JPS60152075A (ja) 特に高電圧pinダイオード等の高速半導体部品
US5220193A (en) Variable-capacitance diode device with common electrode
JPS6346984B2 (https=)
US3506886A (en) High power transistor assembly
JP2633612B2 (ja) 半導体装置
JPS6239830B2 (https=)
US4042948A (en) Integrated circuit isolation with mesas and/or insulating substrate
JPS5870584A (ja) 半導体装置
JPS6223098Y2 (https=)
JPS6348193B2 (https=)
JPS62193175A (ja) シヨツトキバリア半導体装置
JPH0629466A (ja) 半導体集積回路
JP2526534Y2 (ja) シヨツトキバリアダイオ−ド素子
JPH063840B2 (ja) 半導体装置
JPS60175444A (ja) 半導体装置