JPS6124829B2 - - Google Patents
Info
- Publication number
- JPS6124829B2 JPS6124829B2 JP51074519A JP7451976A JPS6124829B2 JP S6124829 B2 JPS6124829 B2 JP S6124829B2 JP 51074519 A JP51074519 A JP 51074519A JP 7451976 A JP7451976 A JP 7451976A JP S6124829 B2 JPS6124829 B2 JP S6124829B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- layer
- substrate
- impurity
- capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000003990 capacitor Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 27
- 230000015654 memory Effects 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7451976A JPS53985A (en) | 1976-06-25 | 1976-06-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7451976A JPS53985A (en) | 1976-06-25 | 1976-06-25 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53985A JPS53985A (en) | 1978-01-07 |
| JPS6124829B2 true JPS6124829B2 (enrdf_load_html_response) | 1986-06-12 |
Family
ID=13549644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7451976A Granted JPS53985A (en) | 1976-06-25 | 1976-06-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53985A (enrdf_load_html_response) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60143663A (ja) * | 1984-10-24 | 1985-07-29 | Hitachi Ltd | 半導体記憶装置 |
-
1976
- 1976-06-25 JP JP7451976A patent/JPS53985A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53985A (en) | 1978-01-07 |
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