JPS61236133A - 半導体集積回路製造装置 - Google Patents

半導体集積回路製造装置

Info

Publication number
JPS61236133A
JPS61236133A JP60077805A JP7780585A JPS61236133A JP S61236133 A JPS61236133 A JP S61236133A JP 60077805 A JP60077805 A JP 60077805A JP 7780585 A JP7780585 A JP 7780585A JP S61236133 A JPS61236133 A JP S61236133A
Authority
JP
Japan
Prior art keywords
capillary
wire
ball
integrated circuit
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60077805A
Other languages
English (en)
Inventor
Naoki Saito
直樹 斎藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60077805A priority Critical patent/JPS61236133A/ja
Publication of JPS61236133A publication Critical patent/JPS61236133A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体集積回路の製造装置に関し、特に集積回
路基板と外部引き出し電極とを全域細線にて電気的に接
続する装置に関する。
〔従来の技術〕
従来、このワイヤボンダーの動作は、集積回路基板上の
金属配線上に予め形成されたワイヤ先端のボール状溶融
部を圧着し、次にそれに連なる全極細線をリードフレー
ム上に懸架し、ワイヤをリードフレーム上に押しけ、次
に金属細線を切断し、しかる後火の結線に用いるボール
状溶融部を形成し、この時点で結線の単位動作を終了す
るものとなっていた。
〔発明が解決しようとする問題点〕
上述した従来のワイヤボンダーは結線の単位動作がボー
ル状溶融部を形成した時点で終了するので、その単位動
作を終了後、一定の時間をおいて次の結線の動作に入る
とき、既に形成されたボール状部の表面が、集積回路基
板並びにリードフレームを加熱するためのヒーターによ
る熱雰囲気によシ酸化され、集積回路基板上の金属配線
との接合が適正に行われず、接合面が争１離したハス、
長時間の熱雰囲気によるアニール効果により、金属線の
破断荷重が低下し、結線動作中に全極線が切断されてし
まうという不具合の生じることがある０ 〔問題点を解決するための手段〕 本発明によれば、金属細線先端にボール伏溶融部を形成
し、このボール伏尋融部を半導体テ、グの電極に押し付
けて接続し、その後金極細線を他部に圧着し、金属軸線
を切断する半導体装置製造装置に於いて、一連の動作を
ホール吠溶融部を形成する前に終了し、この状態で次の
金属細線接続工程のために待機する半導体装置製造装置
を得る。
〔実施例〕
矢に図面を参照して本発明を説明する。
第１図から第５図は本発明の一実施例による半導体装置
製造装置の動作を説明する図で、リードフレームＩＫ取
シ付けられた半尋体テ、グ２上にワイヤー３が貫通した
キャピラリー４が静止して作業の開始を待っている。ま
ず、第１図のように対向電極５とワイヤー３との間の放
電によシ、ワイヤー３の先端にボール伏溶融部を作る。
このボール伏浴融部をキャピラリー４の降下により半導
体テ、グ２の電極に押し付けて接続する（第２図）。
次に、第３図に示すように、キャビ２リ−４を上げ、キ
ャピラリー４をリードフレームｌの外部導出リード上に
もって行き、第４図のようにキャピラリー４を降下せし
めてここにワイヤー３を圧着する。その後、第５図のよ
うにキャピラリー４を上げることによりワイヤー３を切
断し、半導体テップ２上にもって行って止める。
〔発明の効果〕
以上説明の如く、本発明によるワイヤーボンダによれば
、結線の単位動作をボール形成の直前に終了することに
なり、従来のワイヤーボンダで問題となりていた熱雰凹
気によるボール表面の酸化並びにアニール効果を防止す
ることが出来、金属細線による集積回路基板とリードフ
レームの結線が常に安定した状態で実行できることとな
り、半導体集積回路装置の信頼性向上を大巾に促進する
効果がある。
【図面の簡単な説明】
第１図乃至第５図は本発明の一実施例による午褥体裂造
装置の動作を示す所要部の断面図である。 ｌ・・・・・・リードフレーム、２・・・・・・半導体
テ、グ、３・・・・・・ワイヤー％　４・・・・・・キ
ャピラリー、５・・・・・・対向電極。

Claims (1)

    【特許請求の範囲】
  1. 半導体集積回路基板上の電極と、外部引き出し電極とを
    金属細線にて接続する半導体集積回路製造装置に於て、
    金属細線接続工程が前記金属細線を集積回路基板上に圧
    着する為のボール状溶融部を生成する直前で停止し、単
    位動作を終えることを特徴とする半導体集積回路製造装
    置。
JP60077805A 1985-04-12 1985-04-12 半導体集積回路製造装置 Pending JPS61236133A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60077805A JPS61236133A (ja) 1985-04-12 1985-04-12 半導体集積回路製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60077805A JPS61236133A (ja) 1985-04-12 1985-04-12 半導体集積回路製造装置

Publications (1)

Publication Number Publication Date
JPS61236133A true JPS61236133A (ja) 1986-10-21

Family

ID=13644225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60077805A Pending JPS61236133A (ja) 1985-04-12 1985-04-12 半導体集積回路製造装置

Country Status (1)

Country Link
JP (1) JPS61236133A (ja)

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