JPS61234027A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS61234027A
JPS61234027A JP60074372A JP7437285A JPS61234027A JP S61234027 A JPS61234027 A JP S61234027A JP 60074372 A JP60074372 A JP 60074372A JP 7437285 A JP7437285 A JP 7437285A JP S61234027 A JPS61234027 A JP S61234027A
Authority
JP
Japan
Prior art keywords
film
forming
layer
epitaxial growth
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60074372A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0236056B2 (OSRAM
Inventor
Kyoichi Suguro
恭一 須黒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60074372A priority Critical patent/JPS61234027A/ja
Publication of JPS61234027A publication Critical patent/JPS61234027A/ja
Publication of JPH0236056B2 publication Critical patent/JPH0236056B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3241—
    • H10P14/3411—
    • H10P14/3802—

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP60074372A 1985-04-10 1985-04-10 半導体装置の製造方法 Granted JPS61234027A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60074372A JPS61234027A (ja) 1985-04-10 1985-04-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60074372A JPS61234027A (ja) 1985-04-10 1985-04-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61234027A true JPS61234027A (ja) 1986-10-18
JPH0236056B2 JPH0236056B2 (OSRAM) 1990-08-15

Family

ID=13545268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60074372A Granted JPS61234027A (ja) 1985-04-10 1985-04-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61234027A (OSRAM)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902637A (en) * 1986-03-03 1990-02-20 Mitsubishi Denki Kabushiki Kaisha Method for producing a three-dimensional type semiconductor device
US5888857A (en) * 1992-12-04 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6479331B1 (en) 1993-06-30 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
US6638800B1 (en) 1992-11-06 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
US7622335B2 (en) 1992-12-04 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film transistor device
US7719033B2 (en) 2005-04-20 2010-05-18 Samsung Electronics Co., Ltd. Semiconductor devices having thin film transistors and methods of fabricating the same
RU2769430C1 (ru) * 2021-06-16 2022-03-31 Анатолий Васильевич Двуреченский Способ получения эпитаксиальной пленки силицида кальция (варианты)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902637A (en) * 1986-03-03 1990-02-20 Mitsubishi Denki Kabushiki Kaisha Method for producing a three-dimensional type semiconductor device
US6638800B1 (en) 1992-11-06 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US7179726B2 (en) 1992-11-06 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US5888857A (en) * 1992-12-04 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6872605B2 (en) 1992-12-04 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US7622335B2 (en) 1992-12-04 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film transistor device
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
US6479331B1 (en) 1993-06-30 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
US7238558B2 (en) 1993-06-30 2007-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US7719033B2 (en) 2005-04-20 2010-05-18 Samsung Electronics Co., Ltd. Semiconductor devices having thin film transistors and methods of fabricating the same
RU2769430C1 (ru) * 2021-06-16 2022-03-31 Анатолий Васильевич Двуреченский Способ получения эпитаксиальной пленки силицида кальция (варианты)

Also Published As

Publication number Publication date
JPH0236056B2 (OSRAM) 1990-08-15

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term