JPH0236056B2 - - Google Patents

Info

Publication number
JPH0236056B2
JPH0236056B2 JP60074372A JP7437285A JPH0236056B2 JP H0236056 B2 JPH0236056 B2 JP H0236056B2 JP 60074372 A JP60074372 A JP 60074372A JP 7437285 A JP7437285 A JP 7437285A JP H0236056 B2 JPH0236056 B2 JP H0236056B2
Authority
JP
Japan
Prior art keywords
film
lower layer
transistor
metal silicide
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60074372A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61234027A (ja
Inventor
Kyoichi Suguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60074372A priority Critical patent/JPS61234027A/ja
Publication of JPS61234027A publication Critical patent/JPS61234027A/ja
Publication of JPH0236056B2 publication Critical patent/JPH0236056B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3241—
    • H10P14/3411—
    • H10P14/3802—

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP60074372A 1985-04-10 1985-04-10 半導体装置の製造方法 Granted JPS61234027A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60074372A JPS61234027A (ja) 1985-04-10 1985-04-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60074372A JPS61234027A (ja) 1985-04-10 1985-04-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61234027A JPS61234027A (ja) 1986-10-18
JPH0236056B2 true JPH0236056B2 (OSRAM) 1990-08-15

Family

ID=13545268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60074372A Granted JPS61234027A (ja) 1985-04-10 1985-04-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61234027A (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612799B2 (ja) * 1986-03-03 1994-02-16 三菱電機株式会社 積層型半導体装置およびその製造方法
US5643801A (en) 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
US6323071B1 (en) 1992-12-04 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
US5403762A (en) 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
KR100663360B1 (ko) 2005-04-20 2007-01-02 삼성전자주식회사 박막 트랜지스터를 갖는 반도체 소자들 및 그 제조방법들
RU2769430C1 (ru) * 2021-06-16 2022-03-31 Анатолий Васильевич Двуреченский Способ получения эпитаксиальной пленки силицида кальция (варианты)

Also Published As

Publication number Publication date
JPS61234027A (ja) 1986-10-18

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term