JPS61232626A - 絶縁膜形成方法 - Google Patents

絶縁膜形成方法

Info

Publication number
JPS61232626A
JPS61232626A JP60073513A JP7351385A JPS61232626A JP S61232626 A JPS61232626 A JP S61232626A JP 60073513 A JP60073513 A JP 60073513A JP 7351385 A JP7351385 A JP 7351385A JP S61232626 A JPS61232626 A JP S61232626A
Authority
JP
Japan
Prior art keywords
silicon substrate
insulating film
gas
sample chamber
lamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60073513A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0329295B2 (cg-RX-API-DMAC10.html
Inventor
Koji Shiozaki
宏司 塩崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60073513A priority Critical patent/JPS61232626A/ja
Publication of JPS61232626A publication Critical patent/JPS61232626A/ja
Publication of JPH0329295B2 publication Critical patent/JPH0329295B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/60—

Landscapes

  • Formation Of Insulating Films (AREA)
JP60073513A 1985-04-09 1985-04-09 絶縁膜形成方法 Granted JPS61232626A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60073513A JPS61232626A (ja) 1985-04-09 1985-04-09 絶縁膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60073513A JPS61232626A (ja) 1985-04-09 1985-04-09 絶縁膜形成方法

Publications (2)

Publication Number Publication Date
JPS61232626A true JPS61232626A (ja) 1986-10-16
JPH0329295B2 JPH0329295B2 (cg-RX-API-DMAC10.html) 1991-04-23

Family

ID=13520400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60073513A Granted JPS61232626A (ja) 1985-04-09 1985-04-09 絶縁膜形成方法

Country Status (1)

Country Link
JP (1) JPS61232626A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106098542A (zh) * 2016-06-20 2016-11-09 中国工程物理研究院电子工程研究所 一种提升碳化硅功率器件反向阻断电压的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147435A (ja) * 1983-02-10 1984-08-23 Mitsui Toatsu Chem Inc 酸化シリコン膜の形成法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147435A (ja) * 1983-02-10 1984-08-23 Mitsui Toatsu Chem Inc 酸化シリコン膜の形成法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106098542A (zh) * 2016-06-20 2016-11-09 中国工程物理研究院电子工程研究所 一种提升碳化硅功率器件反向阻断电压的方法

Also Published As

Publication number Publication date
JPH0329295B2 (cg-RX-API-DMAC10.html) 1991-04-23

Similar Documents

Publication Publication Date Title
JP3937892B2 (ja) 薄膜形成方法および半導体装置の製造方法
US5412246A (en) Low temperature plasma oxidation process
US5174881A (en) Apparatus for forming a thin film on surface of semiconductor substrate
US4985372A (en) Method of forming conductive layer including removal of native oxide
US5407867A (en) Method of forming a thin film on surface of semiconductor substrate
US7622402B2 (en) Method for forming underlying insulation film
US5543336A (en) Removing damage caused by plasma etching and high energy implantation using hydrogen
KR19990006332A (ko) 반도체 장치의 제조 방법 및 반도체 제조장치
JPS61117822A (ja) 半導体装置の製造装置
JPH07321046A (ja) 薄膜形成装置及び薄膜形成方法
JPH0714986A (ja) 半導体装置の製造方法及びその製造装置
US5336361A (en) Method of manufacturing an MIS-type semiconductor device
JPH0964307A (ja) 酸化物薄膜の熱処理方法
US6465374B1 (en) Method of surface preparation
JP4124675B2 (ja) シリコンウェハを低温酸化する方法およびその装置
JPS61232626A (ja) 絶縁膜形成方法
US20030068902A1 (en) Method for depositing silicon oxide incorporating an outgassing step
JPH05343391A (ja) 半導体装置の製造方法
JPH0855846A (ja) 酸化珪素膜の加熱処理方法および加熱処理装置
JP2004088078A (ja) 半導体装置およびその製造方法
JPH08124923A (ja) 酸化物薄膜の熱処理方法および熱処理装置
JPH0778759A (ja) 半導体材料の製造方法および製造装置
JPH05259153A (ja) シリコン酸化膜の製造方法と製造装置
KR100329745B1 (ko) 알루미나를 사용한 게이트 절연막 형성방법
JPH0682683B2 (ja) 薄膜トランジスタの製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term