JPS6123008Y2 - - Google Patents
Info
- Publication number
- JPS6123008Y2 JPS6123008Y2 JP6529281U JP6529281U JPS6123008Y2 JP S6123008 Y2 JPS6123008 Y2 JP S6123008Y2 JP 6529281 U JP6529281 U JP 6529281U JP 6529281 U JP6529281 U JP 6529281U JP S6123008 Y2 JPS6123008 Y2 JP S6123008Y2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- furnace
- container
- exhaust
- exhaust port
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 description 13
- 239000013078 crystal Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6529281U JPS6123008Y2 (enrdf_load_stackoverflow) | 1981-05-06 | 1981-05-06 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6529281U JPS6123008Y2 (enrdf_load_stackoverflow) | 1981-05-06 | 1981-05-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57180759U JPS57180759U (enrdf_load_stackoverflow) | 1982-11-16 |
JPS6123008Y2 true JPS6123008Y2 (enrdf_load_stackoverflow) | 1986-07-10 |
Family
ID=29861336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6529281U Expired JPS6123008Y2 (enrdf_load_stackoverflow) | 1981-05-06 | 1981-05-06 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6123008Y2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5826095A (ja) * | 1981-07-31 | 1983-02-16 | Toshiba Ceramics Co Ltd | 単結晶シリコン引上装置 |
-
1981
- 1981-05-06 JP JP6529281U patent/JPS6123008Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS57180759U (enrdf_load_stackoverflow) | 1982-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6123008Y2 (enrdf_load_stackoverflow) | ||
JPS5930792A (ja) | 単結晶育成装置 | |
JP2003504884A (ja) | 溶着反応装置におけるシール手段およびその適用 | |
JP2023514699A (ja) | ユニット化るつぼアセンブリを形成するための方法、るつぼ鋳型、およびユニット化るつぼ | |
JP2000068209A (ja) | 基板処理装置 | |
JPS61186288A (ja) | 炭化珪素化合物半導体の気相エピタキシヤル成長装置 | |
US11326271B2 (en) | Methods for forming a unitized crucible assembly | |
JPH0329332Y2 (enrdf_load_stackoverflow) | ||
JPS61163279A (ja) | Cvd装置 | |
JPH092892A (ja) | 半導体単結晶引き上げ装置 | |
JPH05109626A (ja) | 減圧cvd装置 | |
CN113652738A (zh) | 一种用于物理气相传输法生长晶体的坩埚系统及其使用方法 | |
JPH0369113A (ja) | 半導体製造装置 | |
JPS59191325A (ja) | 気相成長装置 | |
JPH116068A (ja) | 減圧気相成長装置 | |
JPH0410617A (ja) | 半導体製造装置 | |
JP3252644B2 (ja) | 気相成長方法及びその装置 | |
JP3070130B2 (ja) | 縦型減圧気相成長装置 | |
JP2001278698A (ja) | 真空配管構造 | |
JPS59149022A (ja) | 熱処理装置 | |
JPH0258825A (ja) | 縦型減圧cvd装置 | |
JPH06293586A (ja) | シリコン単結晶引上げ装置 | |
JPH0691015B2 (ja) | 気相成長装置及びその予備処理方法 | |
JPS60730A (ja) | バブラ | |
Aso et al. | A novel dielectric isolation process using molten SiGe |