JPH0329332Y2 - - Google Patents
Info
- Publication number
- JPH0329332Y2 JPH0329332Y2 JP19719683U JP19719683U JPH0329332Y2 JP H0329332 Y2 JPH0329332 Y2 JP H0329332Y2 JP 19719683 U JP19719683 U JP 19719683U JP 19719683 U JP19719683 U JP 19719683U JP H0329332 Y2 JPH0329332 Y2 JP H0329332Y2
- Authority
- JP
- Japan
- Prior art keywords
- heating section
- flow
- crucible
- gas
- heat shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 15
- 239000007789 gas Substances 0.000 description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19719683U JPS60105665U (ja) | 1983-12-23 | 1983-12-23 | ガスの流れを均一にした単結晶引上装置の加熱部 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19719683U JPS60105665U (ja) | 1983-12-23 | 1983-12-23 | ガスの流れを均一にした単結晶引上装置の加熱部 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60105665U JPS60105665U (ja) | 1985-07-18 |
JPH0329332Y2 true JPH0329332Y2 (enrdf_load_stackoverflow) | 1991-06-21 |
Family
ID=30755320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19719683U Granted JPS60105665U (ja) | 1983-12-23 | 1983-12-23 | ガスの流れを均一にした単結晶引上装置の加熱部 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60105665U (enrdf_load_stackoverflow) |
-
1983
- 1983-12-23 JP JP19719683U patent/JPS60105665U/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60105665U (ja) | 1985-07-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4747906A (en) | Process and apparatus for purifying silicon | |
JPH0329332Y2 (enrdf_load_stackoverflow) | ||
TW202246592A (zh) | 溫區控制系統和晶體生長設備 | |
US3021198A (en) | Method for producing semiconductor single crystals | |
JPH092892A (ja) | 半導体単結晶引き上げ装置 | |
JPS62211914A (ja) | 半導体薄膜気相成長装置 | |
JPS6086822A (ja) | 半導体薄膜気相成長装置 | |
CN109666968B (zh) | 硅单晶的制造方法 | |
JPS6123008Y2 (enrdf_load_stackoverflow) | ||
JPS63176388A (ja) | 単結晶引上げ装置 | |
JPH054358B2 (enrdf_load_stackoverflow) | ||
KR0157365B1 (ko) | 실리콘 단결정 성장노내의 가스 흐름을 원활하게 하기 위한 방법 및 이를 실현하기 위한 장치 | |
JPS6327426B2 (enrdf_load_stackoverflow) | ||
JPH11246294A (ja) | 単結晶引上装置 | |
JPH04124083A (ja) | 半導体単結晶育成装置 | |
JPS62171984A (ja) | 結晶製造装置 | |
JPS61158890A (ja) | 結晶成長装置 | |
JPH02212393A (ja) | 気相成長方法及びその装置 | |
JPH01251710A (ja) | 気相成長装置 | |
JPH0733303B2 (ja) | 結晶成長装置 | |
JPS6240720A (ja) | 気相エピタキシヤル成長装置 | |
JPS6126217A (ja) | 気相成長装置 | |
JPH0365415B2 (enrdf_load_stackoverflow) | ||
JPS6144791A (ja) | シリコン単結晶引上装置の炭素ルツボ | |
JP3126530B2 (ja) | 単結晶体の製造方法およびその装置 |