JPS6122470B2 - - Google Patents
Info
- Publication number
- JPS6122470B2 JPS6122470B2 JP52105596A JP10559677A JPS6122470B2 JP S6122470 B2 JPS6122470 B2 JP S6122470B2 JP 52105596 A JP52105596 A JP 52105596A JP 10559677 A JP10559677 A JP 10559677A JP S6122470 B2 JPS6122470 B2 JP S6122470B2
- Authority
- JP
- Japan
- Prior art keywords
- rom
- ion implantation
- region
- check
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005468 ion implantation Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 13
- 239000011574 phosphorus Substances 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000002513 implantation Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- -1 Phosphorus ion Chemical class 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10559677A JPS5438764A (en) | 1977-09-01 | 1977-09-01 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10559677A JPS5438764A (en) | 1977-09-01 | 1977-09-01 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5438764A JPS5438764A (en) | 1979-03-23 |
| JPS6122470B2 true JPS6122470B2 (enExample) | 1986-05-31 |
Family
ID=14411871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10559677A Granted JPS5438764A (en) | 1977-09-01 | 1977-09-01 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5438764A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5676565A (en) * | 1979-11-28 | 1981-06-24 | Nec Corp | Integrated circuit |
| JPS5771568A (en) * | 1980-10-22 | 1982-05-04 | Fujitsu Ltd | Marking method of bubble meory wafer |
| JPS59127859A (ja) * | 1983-01-12 | 1984-07-23 | Sanyo Electric Co Ltd | Ｒｏｍ半導体装置の製造方法 |
-
1977
- 1977-09-01 JP JP10559677A patent/JPS5438764A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5438764A (en) | 1979-03-23 |
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