JPS61224365A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS61224365A
JPS61224365A JP60063431A JP6343185A JPS61224365A JP S61224365 A JPS61224365 A JP S61224365A JP 60063431 A JP60063431 A JP 60063431A JP 6343185 A JP6343185 A JP 6343185A JP S61224365 A JPS61224365 A JP S61224365A
Authority
JP
Japan
Prior art keywords
semiconductor
layer
base
thin film
multilayer film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60063431A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0325029B2 (enrdf_load_stackoverflow
Inventor
Yasuhiro Shiraki
靖寛 白木
Kiyokazu Nakagawa
清和 中川
Yoshimasa Murayama
村山　良昌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60063431A priority Critical patent/JPS61224365A/ja
Priority to US06/839,349 priority patent/US4785340A/en
Publication of JPS61224365A publication Critical patent/JPS61224365A/ja
Publication of JPH0325029B2 publication Critical patent/JPH0325029B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP60063431A 1985-03-29 1985-03-29 半導体装置 Granted JPS61224365A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60063431A JPS61224365A (ja) 1985-03-29 1985-03-29 半導体装置
US06/839,349 US4785340A (en) 1985-03-29 1986-03-13 Semiconductor device having doping multilayer structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60063431A JPS61224365A (ja) 1985-03-29 1985-03-29 半導体装置

Publications (2)

Publication Number Publication Date
JPS61224365A true JPS61224365A (ja) 1986-10-06
JPH0325029B2 JPH0325029B2 (enrdf_load_stackoverflow) 1991-04-04

Family

ID=13229077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60063431A Granted JPS61224365A (ja) 1985-03-29 1985-03-29 半導体装置

Country Status (1)

Country Link
JP (1) JPS61224365A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027179A (en) * 1985-12-03 1991-06-25 Fujitsu Limited Resonant-tunneling heterojunction bipolar transistor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027179A (en) * 1985-12-03 1991-06-25 Fujitsu Limited Resonant-tunneling heterojunction bipolar transistor device
US5389804A (en) * 1985-12-03 1995-02-14 Fujitsu Limited Resonant-tunneling heterojunction bipolar transistor device

Also Published As

Publication number Publication date
JPH0325029B2 (enrdf_load_stackoverflow) 1991-04-04

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term