JPS6152990B2 - - Google Patents
Info
- Publication number
- JPS6152990B2 JPS6152990B2 JP56031452A JP3145281A JPS6152990B2 JP S6152990 B2 JPS6152990 B2 JP S6152990B2 JP 56031452 A JP56031452 A JP 56031452A JP 3145281 A JP3145281 A JP 3145281A JP S6152990 B2 JPS6152990 B2 JP S6152990B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- base
- emitter
- type
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 37
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 20
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 6
- 230000002457 bidirectional effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
- H10D10/841—Vertical heterojunction BJTs having a two-dimensional base, e.g. modulation-doped base, inversion layer base or delta-doped base
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/134,235 US4326208A (en) | 1980-03-26 | 1980-03-26 | Semiconductor inversion layer transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56147477A JPS56147477A (en) | 1981-11-16 |
| JPS6152990B2 true JPS6152990B2 (enrdf_load_stackoverflow) | 1986-11-15 |
Family
ID=22462384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3145281A Granted JPS56147477A (en) | 1980-03-26 | 1981-03-06 | Semiconductor transistor |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4326208A (enrdf_load_stackoverflow) |
| EP (1) | EP0036501B1 (enrdf_load_stackoverflow) |
| JP (1) | JPS56147477A (enrdf_load_stackoverflow) |
| DE (1) | DE3163572D1 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102602050B1 (ko) * | 2022-12-27 | 2023-11-14 | (주)에스텔라 | 동물 맞춤형 솔루션 제공 장치 및 방법 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4910562A (en) * | 1982-04-26 | 1990-03-20 | International Business Machines Corporation | Field induced base transistor |
| US4532533A (en) * | 1982-04-27 | 1985-07-30 | International Business Machines Corporation | Ballistic conduction semiconductor device |
| US4800415A (en) * | 1984-09-21 | 1989-01-24 | American Telephone And Telegraph Company, At&T Bell Laboratories | Bipolar inversion channel device |
| JP2777898B2 (ja) * | 1989-02-20 | 1998-07-23 | 富士通株式会社 | 化合物半導体装置 |
| US5113231A (en) * | 1989-09-07 | 1992-05-12 | California Institute Of Technology | Quantum-effect semiconductor devices |
| US5235216A (en) * | 1991-07-15 | 1993-08-10 | International Business Machines Corporation | Bipolar transistor using emitter-base reverse bias carrier generation |
| JP2734260B2 (ja) * | 1991-12-02 | 1998-03-30 | 日本電気株式会社 | トンネルトランジスタ |
| US5326985A (en) * | 1992-09-28 | 1994-07-05 | Motorola, Inc. | Bipolar doped semiconductor structure and method for making |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL294716A (enrdf_load_stackoverflow) * | 1962-06-29 | 1900-01-01 |
-
1980
- 1980-03-26 US US06/134,235 patent/US4326208A/en not_active Expired - Lifetime
-
1981
- 1981-02-25 EP EP81101370A patent/EP0036501B1/en not_active Expired
- 1981-02-25 DE DE8181101370T patent/DE3163572D1/de not_active Expired
- 1981-03-06 JP JP3145281A patent/JPS56147477A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102602050B1 (ko) * | 2022-12-27 | 2023-11-14 | (주)에스텔라 | 동물 맞춤형 솔루션 제공 장치 및 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0036501B1 (en) | 1984-05-16 |
| DE3163572D1 (en) | 1984-06-20 |
| US4326208A (en) | 1982-04-20 |
| JPS56147477A (en) | 1981-11-16 |
| EP0036501A1 (en) | 1981-09-30 |
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