JPS61214475A - Thin-film transistor - Google Patents
Thin-film transistorInfo
- Publication number
- JPS61214475A JPS61214475A JP5558185A JP5558185A JPS61214475A JP S61214475 A JPS61214475 A JP S61214475A JP 5558185 A JP5558185 A JP 5558185A JP 5558185 A JP5558185 A JP 5558185A JP S61214475 A JPS61214475 A JP S61214475A
- Authority
- JP
- Japan
- Prior art keywords
- contact layer
- ohmic contact
- phosphorus
- thin film
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 13
- 239000007789 gas Substances 0.000 claims abstract description 15
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000002994 raw material Substances 0.000 claims abstract description 9
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims abstract description 8
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 7
- 239000011737 fluorine Substances 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- WPPVEXTUHHUEIV-UHFFFAOYSA-N trifluorosilane Chemical compound F[SiH](F)F WPPVEXTUHHUEIV-UHFFFAOYSA-N 0.000 claims description 3
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 11
- 238000009792 diffusion process Methods 0.000 abstract description 11
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 11
- 239000011574 phosphorus Substances 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 5
- 229910000077 silane Inorganic materials 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- FSZJTXIGLKPMOT-UHFFFAOYSA-N F.F.F.[SiH4] Chemical compound F.F.F.[SiH4] FSZJTXIGLKPMOT-UHFFFAOYSA-N 0.000 abstract 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 2
- 150000004678 hydrides Chemical class 0.000 abstract 2
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- WKFBZNUBXWCCHG-UHFFFAOYSA-N phosphorus trifluoride Chemical compound FP(F)F WKFBZNUBXWCCHG-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- IEPMHPLKKUKRSX-UHFFFAOYSA-J silicon(4+);tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Si+4] IEPMHPLKKUKRSX-UHFFFAOYSA-J 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は液晶パネルの駆動等に用いらｎる薄膜トラン
ジスタ（以下Ｔ］ＦＴと略す】に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film transistor (hereinafter abbreviated as FT) used for driving a liquid crystal panel, etc.
この発明は液晶パネルの駆動等に用いらｎるＴＦＴにお
いて、オーム接触層６ｔ−８フツ化シランと水素、ホス
フィン等から作成することによりリンがオーム接触層６
からソース、ドレイン電極７．８へ拡散するのを防ぎ、
且つオーム接触層６の成長速度を増ししかも原料ガスの
危険性が々いようにしｔものである。In a TFT used for driving a liquid crystal panel, the present invention provides an ohmic contact layer 6t-8 made of fluorinated silane, hydrogen, phosphine, etc.
to prevent diffusion from the source and drain electrodes 7.8,
Moreover, the growth rate of the ohmic contact layer 6 is increased, and the danger of the source gas is increased.
第２図は従来のＴＰＴの断面構造図である。第２図にお
いて１は絶縁性基板で石英、ガラス等から成る。２はゲ
ート電極であってクロム、アルミニウム等から取り絶縁
性基板１の上にスパッタ法、真窒蒸渭法等で形成さｎる
。ゲート肥縁膜８及び非晶質半導体薄膜４は各々二酸化
シリコン及び水素化非晶質シリコン等から成りともにＰ
ＯＶＤ法によってゲート電極２及び絶縁性基ｒＬ１の上
に形成される。絶縁膜５は二酸化シリコン等がら成りｒ
ｃｖ：ｏ法によって非晶負半導体薄膜４の上に形成さＩ
Ｌる。オーム接触層６は従来ル型水素化非晶質シリコン
（１十−α−’ ｉ ： Ｂ）ｔｉｔはホスフィン、水
素、４フツ化ケイ２をぶ科ガスとするフッ素を含むｎ型
水素化非晶負シリコンＣ％十−α−εｉ：Ｈ：Ｆ）によ
って形成してい几。FIG. 2 is a cross-sectional structural diagram of a conventional TPT. In FIG. 2, reference numeral 1 denotes an insulating substrate made of quartz, glass, or the like. Reference numeral 2 denotes a gate electrode, which is made of chromium, aluminum, etc., and is formed on the insulating substrate 1 by sputtering, true nitrogen evaporation, or the like. The gate thickening film 8 and the amorphous semiconductor thin film 4 are each made of silicon dioxide, hydrogenated amorphous silicon, etc., and are both made of P.
It is formed on the gate electrode 2 and the insulating group rL1 by an OVD method. The insulating film 5 is made of silicon dioxide or the like.
I formed on the amorphous negative semiconductor thin film 4 by the cv:o method.
L. The ohmic contact layer 6 is a conventional hydrogenated amorphous silicon (10-α-' i : B) titanium oxide containing n-type hydrogenated non-crystalline silicon containing phosphine, hydrogen, and fluorine containing silicon tetrafluoride 2 as a gas. It is made of crystalline negative silicon (C% 10-α-εi:H:F).
オーム級触唐６の材料に【：従来外十−α−ｓ６：Ｈが
広く用いら几ている。しかし、ｎ十−６−Ｂ４：１ｉ中
に含まｎるりンは拡散係数が大きくソース、ドレイン電
極７．８に容易に拡散し、その九めに接触抵抗ｔ−６ま
り下げることができなかった。リンの拡散を防ぐために
最近答十−α−８（：Ｈ：Ｆが使用さｎることがめるが
、＋−↓−ｓｚ：Ｈ二ｙ１作るだめの従来のｙＡ科ガ
スの主成分４フッ化ケイ素は毒性が強く、ｔ７ｔｒｊＸ
としての成長速度も遅いなどの欠点があった。Conventionally, 10-α-s6:H has been widely used as the material for Ohm-class contact 6. However, nruphosphorus contained in n-6-B4:1i has a large diffusion coefficient and easily diffuses into the source and drain electrodes, making it impossible to lower the contact resistance by t-6. . Recently, to prevent the diffusion of phosphorus, 10-α-8(:H:F) has been used, but +-↓-sz:H2y1 is the main component of the conventional yA family gas that cannot be made. Silicon is highly toxic and t7trjX
There were drawbacks such as slow growth rate.
そこでこの発明は従来のかかる欠点１に解決するｔめオ
ーム接触層６の材料としてフッ素を含むをｎ型水素化非
晶質シリコンを用い且つ外＋−５−Ｂｉ：Ｈ：Ｆｔ−作
成する九めの原料ガスとしてホスフィンを含む３フッ化
シ２ンを使用することによってリンのソース、ドレイン
電Ｗ７．８への拡散を抑制し且つオーム接触層６の成長
速度を速めるようにした。Therefore, the present invention solves the above drawbacks of the conventional ohmic contact layer 6 by using n-type hydrogenated amorphous silicon containing fluorine as the material of the ohmic contact layer 6 and creating an outer +-5-Bi:H:Ft-9. By using phosphorus trifluoride containing phosphine as the raw material gas, diffusion of phosphorus into the source/drain electrode W7.8 is suppressed and the growth rate of the ohmic contact layer 6 is increased.
□ 上記の材料でオーム妥触層５ｔ−形成すると 、＋
−，−ｓ４：ａ：ｖの中のリンは、＋ 、、Ｂ４二Ｉ
Ｉ中のリンより拡散係数が小さいのでリンのソース、ド
レイン電極７．８への拡散が抑制でき且つオーム接触層
６の成長速度は３フッ化シラン以外の原料ガス、例えば
シラン、水素と４フッ化ケイ素などの原料ガスを用いた
場合に比べ数倍速くなる。□ When forming an ohmic compatible layer 5t- with the above material, +
-, -s4: phosphorus in a:v is +,,B42I
Since the diffusion coefficient is smaller than that of phosphorus in I, the diffusion of phosphorus into the source and drain electrodes 7.8 can be suppressed, and the growth rate of the ohmic contact layer 6 can be increased by using source gases other than trifluorosilane, such as silane, hydrogen and tetrafluorosilane. This is several times faster than when using raw material gas such as silicon oxide.
以下に本発明の実施例を図面に基いて詳細に説明する。 Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図に本発明でオーム黴触１−に用いるｎ”−ａ−８
ｉ ： Ｈ： Ｆｉｒ ＯＶＤＫ ヨッテ作成する際の
膜の成長速度と投入電力＠贋との関係を示す。黒丸は本
発明のホスフィンと８フツ化シランとｔ−原料ガスに用
いｔ場合、白丸番；従来通りホスフィンと４７フ化ケイ
素と水素と金属湯ガスに用い九場会金示している。従来
の原料ガスでは成長速度が遅く０．７〜８．ＯＡ／秒′
秒置８度る。Figure 1 shows n''-a-8 used for ohmic mold contact 1- in the present invention.
i: H: Fir OVDK Shows the relationship between the film growth rate and the input power @fake when creating the yacht. The black circles indicate the number of white circles used for the phosphine, octafluoride silane, and raw material gas of the present invention. With conventional raw material gas, the growth rate is slow and is 0.7 to 8. OA/sec'
The second is 8 degrees.
−万本発明の原料ガスでは成長速度が２．０〜８、ＱＡ
／秒程度であり、従来の成長速度を上回っている。また
８フツ化シランは４フツ化ケイ素、シランに比べて毒性
、燃性とも低い。ま７′ｃ８フツ化シ２ンはオーム接触
層全フッ素を含むｎ散水素化微結晶非結晶混相シ、リコ
ン（％＋−μｃ −８ｉ：Ｉｉ：ＩＦ）によって形成す
る場合にも用いることができ、一般には水素、ホスフィ
ンと８フツ化シラ７０’ｌ’ ＯＶＤＶＣヨツ”Ｃｎ”
−ｐ Ｏ−Ｂ ｉ ： Ｈ：１１′を形成する。-The raw material gas of the present invention has a growth rate of 2.0 to 8, QA
/second, which exceeds the conventional growth rate. Silane octafluoride is also lower in toxicity and flammability than silicon tetrafluoride and silane. The 7'c8 fluoride silicon can also be used when the ohmic contact layer is formed by an n-dispersed hydrogenated microcrystalline amorphous mixed phase silicon containing total fluorine (%+-μc-8i:Ii:IF). Generally, hydrogen, phosphine and octafluoride 70'l' OVDVC "Cn"
-p O-B i :H:11' is formed.
本発明では第２図のオーム接触層６ｔ−ホスフィンと８
フツ化シランとからＩ’ＯＶＤ法によって作成し九ｎ十
−Ｇ−８＜：Ｈ：Ｆにより形成している。ソース電極７
、ドレイン電極８はともにクロム、アルミニウム等から
成りオーム接触層６の上にスパッタ法により形成さｒｌ
−る。In the present invention, the ohmic contact layer 6t-phosphine and 8
It is prepared from fluorinated silane by the I'OVD method and formed by 9n0-G-8<:H:F. Source electrode 7
, the drain electrode 8 is made of chromium, aluminum, etc. and is formed on the ohmic contact layer 6 by sputtering.
-ru.
上記のように構成さｒＬ７ＨＴＩＦＴのゲート電標２に
電圧を印加すると、ゲート絶縁膜８と非晶質半導体薄膜
４の間にチャネルが形成さ７４，１ このときにソース
電極７とドレイン電極８の間に電圧を印加すｎば、ソー
スを極７、ドレイン電極８の間に電流が流ｎる。オーム
接触層６は、ソース、ドレイン電極７．８と非晶質半導
体薄膜４との接触抵抗を低く押さえる働きがある。When a voltage is applied to the gate electrode 2 of the rL7HTIFT configured as described above, a channel is formed between the gate insulating film 8 and the amorphous semiconductor thin film 4 74,1. If a voltage is applied between them, a current flows between the source electrode 7 and the drain electrode 8. The ohmic contact layer 6 has the function of keeping the contact resistance between the source and drain electrodes 7.8 and the amorphous semiconductor thin film 4 low.
この発明は以上説明したようにオーム接触層から他層へ
のリンの拡散を抑制するだけでなくオーム接触層の成長
速度を増し、がっｉ料ガスの安全性が高いという効果が
ある。As explained above, this invention not only suppresses the diffusion of phosphorus from the ohmic contact layer to other layers, but also increases the growth rate of the ohmic contact layer, and has the effect of increasing the safety of the i-metal gas.
第１図は本発明にかかるオーム接触層の成長速度を示す
図、第２図は従来のＴＰＴの断面構造図でｂる。
４０．非晶質半導体薄膜
６６．オーム通触層
７０．ソース電極
８０．ドレイン電極
以上
工業技術院長
出願人 セイコー電子工業株式会社
代理人 弁理士 最 上 務
投入’Ｕｙ’ｆ！ｌ ＜Ｗ／ｃｒａリ
オーＡ１卆触層のＡ長速崖とホＴ図
第１図FIG. 1 is a diagram showing the growth rate of an ohmic contact layer according to the present invention, and FIG. 2 is a diagram showing a cross-sectional structure of a conventional TPT. 40. Amorphous semiconductor thin film 66. Ohmic contact layer 70. Source electrode 80. Applicant for Drain Electrode and above Director of Industrial Science and Technology Agent of Seiko Electronics Co., Ltd. Patent Attorney Mogami Input 'Uy'f! l <W/cra Rioux A1 contact layer A long scarp and Ho T diagram Figure 1
Claims (2)
ート電極と、前記ゲート電極を被うように形成されたゲ
ート絶縁膜と、前記ゲート絶縁膜上に形成された非晶質
半導体薄膜と、前記非晶質半導体薄膜上にあつて、前記
ゲート電極の直上及び直上から間隔を置いて設けられた
絶縁膜と、前記非晶質半導体薄膜上にあつて、前記絶縁
膜に被われていない部分に形成されたオーム接触層と、
前記オーム接触層上に設けられたソース電極及びドレイ
ン電極とから成る薄膜トランジスタにおいて、前記オー
ム接触層がホスフィンを含む３フッ化シランを原料とす
るガスにより作られるフッ素を含むｎ型水素化非晶質シ
リコンであることを特徴とする薄膜トランジスタ。(1) An insulating substrate, a gate electrode provided on the insulating substrate, a gate insulating film formed to cover the gate electrode, and an amorphous semiconductor formed on the gate insulating film. a thin film, an insulating film provided on the amorphous semiconductor thin film directly above and spaced apart from directly above the gate electrode, and an insulating film provided on the amorphous semiconductor thin film and covered with the insulating film. an ohmic contact layer formed on the non-contact parts;
In a thin film transistor comprising a source electrode and a drain electrode provided on the ohmic contact layer, the ohmic contact layer is made of a fluorine-containing n-type hydrogenated amorphous material made from a gas made from trifluorosilane containing phosphine. A thin film transistor characterized by being made of silicon.
と水素とを原料とするガスにより作られるフッ素を含む
をｎ型水素化微結晶非結晶混相シリコンであることを特
徴とする特許請求の範囲第１項記載の薄膜トランジスタ
。(2) The ohmic contact layer is a fluorine-containing n-type hydrogenated microcrystalline amorphous mixed-phase silicon made from a gas containing trifluorosilane containing fins and hydrogen as raw materials. The thin film transistor according to scope 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5558185A JPS61214475A (en) | 1985-03-19 | 1985-03-19 | Thin-film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5558185A JPS61214475A (en) | 1985-03-19 | 1985-03-19 | Thin-film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61214475A true JPS61214475A (en) | 1986-09-24 |
Family
ID=13002703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5558185A Pending JPS61214475A (en) | 1985-03-19 | 1985-03-19 | Thin-film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61214475A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5440168A (en) * | 1993-02-22 | 1995-08-08 | Ryoden Semiconductor System Engineering Corporation | Thin-film transistor with suppressed off-current and Vth |
| KR19980074495A (en) * | 1997-03-25 | 1998-11-05 | 윤종용 | Thin film transistor using fluorine-containing oxide film (SiOF) and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56135968A (en) * | 1980-03-27 | 1981-10-23 | Canon Inc | Amorphous silicon thin film transistor and manufacture thereof |
| JPS5767020A (en) * | 1980-10-15 | 1982-04-23 | Agency Of Ind Science & Technol | Thin silicon film and its manufacture |
-
1985
- 1985-03-19 JP JP5558185A patent/JPS61214475A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56135968A (en) * | 1980-03-27 | 1981-10-23 | Canon Inc | Amorphous silicon thin film transistor and manufacture thereof |
| JPS5767020A (en) * | 1980-10-15 | 1982-04-23 | Agency Of Ind Science & Technol | Thin silicon film and its manufacture |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5440168A (en) * | 1993-02-22 | 1995-08-08 | Ryoden Semiconductor System Engineering Corporation | Thin-film transistor with suppressed off-current and Vth |
| US5885858A (en) * | 1993-02-22 | 1999-03-23 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing thin-film transistor |
| US6103556A (en) * | 1993-02-22 | 2000-08-15 | Mitsubishi Denki Kabushiki Kaisha | Thin-film transistor and method of manufacturing the same |
| KR19980074495A (en) * | 1997-03-25 | 1998-11-05 | 윤종용 | Thin film transistor using fluorine-containing oxide film (SiOF) and manufacturing method thereof |
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