JPS61244068A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPS61244068A
JPS61244068A JP60085233A JP8523385A JPS61244068A JP S61244068 A JPS61244068 A JP S61244068A JP 60085233 A JP60085233 A JP 60085233A JP 8523385 A JP8523385 A JP 8523385A JP S61244068 A JPS61244068 A JP S61244068A
Authority
JP
Japan
Prior art keywords
light shielding
layer
process
passivation layer
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60085233A
Other versions
JPH0666471B2 (en
Inventor
Hisashi Fukuda
Hiroaki Kakinuma
Satoru Nishikawa
Original Assignee
Oki Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Ind Co Ltd filed Critical Oki Electric Ind Co Ltd
Priority to JP60085233A priority Critical patent/JPH0666471B2/en
Publication of JPS61244068A publication Critical patent/JPS61244068A/en
Publication of JPH0666471B2 publication Critical patent/JPH0666471B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

PURPOSE:To avoid the deterioration of light shielding characteristics and simplify the process by forming a light shielding film with an amorphous carbon thin film. CONSTITUTION:After an activation layer 74, a source electrode 76, a drain electrode 77 and a passivation layer 79 are formed, a light shielding layer 12 is formed out of an amorphous carbon film. In this case, the passivation layer 79 and the light shielding layer 12 can be made to grow in one process only by changing material gas in the same plasma CVD apparatus. For instance, when the passivation layer 79 is made of a-SiOx, the light shielding layer 12 can be formed on the passivation layer 79 continuously in one process by changing the material gas from SiHx+N2O to C2H2+H2. After these layers are formed, the unnecessary parts of those layers above a display electrode 81 are removed by plasma etching. With this constitution, processes such as deposition of a metal layer for the light shielding layer, photolithography and reformation of the passivation layer are unnecessitated and the process can be quite simplified.
JP60085233A 1985-04-20 1985-04-20 Thin film transistor Expired - Lifetime JPH0666471B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60085233A JPH0666471B2 (en) 1985-04-20 1985-04-20 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60085233A JPH0666471B2 (en) 1985-04-20 1985-04-20 Thin film transistor

Publications (2)

Publication Number Publication Date
JPS61244068A true JPS61244068A (en) 1986-10-30
JPH0666471B2 JPH0666471B2 (en) 1994-08-24

Family

ID=13852843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60085233A Expired - Lifetime JPH0666471B2 (en) 1985-04-20 1985-04-20 Thin film transistor

Country Status (1)

Country Link
JP (1) JPH0666471B2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0263170A (en) * 1988-03-18 1990-03-02 Nokia Graetz Gmbh Thin layer transistor
US4956680A (en) * 1986-12-22 1990-09-11 Seiko Instruments Inc. Thin film transistor
JPH03192332A (en) * 1989-10-13 1991-08-22 Hughes Aircraft Co Liquid crystal light valve structural body of separated pixel
JPH05216060A (en) * 1992-02-04 1993-08-27 Ngk Insulators Ltd Space optical modulating element and production thereof
US5330616A (en) * 1988-02-01 1994-07-19 Semiconductor Energy Laboratory Co., Ltd. Electric device provided with carbon pattern structure and manufacturing method for the same
US5552630A (en) * 1990-04-13 1996-09-03 Fuji Xerox Co., Ltd. Thin film transistor having metallic light shield
EP0856592A1 (en) * 1997-02-04 1998-08-05 N.V. Bekaert S.A. A coating comprising layers of diamond like carbon and diamond like nanocomposite compositions
US6115090A (en) * 1997-03-26 2000-09-05 Semiconductor Energy Laboratory Co., Ltd. Display device
US6228471B1 (en) 1997-02-04 2001-05-08 N.V. Bekaert S.A. Coating comprising layers of diamond like carbon and diamond like nanocomposite compositions
US6927826B2 (en) 1997-03-26 2005-08-09 Semiconductor Energy Labaratory Co., Ltd. Display device
US7508033B2 (en) 1998-04-24 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with diamond-like carbon film on backside of substrate
WO2011135908A1 (en) * 2010-04-30 2011-11-03 シャープ株式会社 Circuit board and display device
CN105575819A (en) * 2016-02-26 2016-05-11 华南理工大学 Metal oxide thin film transistor with top gate structure and manufacturing method thereof

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4956680A (en) * 1986-12-22 1990-09-11 Seiko Instruments Inc. Thin film transistor
US5330616A (en) * 1988-02-01 1994-07-19 Semiconductor Energy Laboratory Co., Ltd. Electric device provided with carbon pattern structure and manufacturing method for the same
JPH0263170A (en) * 1988-03-18 1990-03-02 Nokia Graetz Gmbh Thin layer transistor
JPH03192332A (en) * 1989-10-13 1991-08-22 Hughes Aircraft Co Liquid crystal light valve structural body of separated pixel
US5552630A (en) * 1990-04-13 1996-09-03 Fuji Xerox Co., Ltd. Thin film transistor having metallic light shield
JPH05216060A (en) * 1992-02-04 1993-08-27 Ngk Insulators Ltd Space optical modulating element and production thereof
EP0856592A1 (en) * 1997-02-04 1998-08-05 N.V. Bekaert S.A. A coating comprising layers of diamond like carbon and diamond like nanocomposite compositions
WO1998033948A1 (en) * 1997-02-04 1998-08-06 N.V. Bekaert S.A. A coating comprising layers of diamond like carbon and diamond like nanocomposite compositions
US6228471B1 (en) 1997-02-04 2001-05-08 N.V. Bekaert S.A. Coating comprising layers of diamond like carbon and diamond like nanocomposite compositions
US6115090A (en) * 1997-03-26 2000-09-05 Semiconductor Energy Laboratory Co., Ltd. Display device
US6593990B1 (en) 1997-03-26 2003-07-15 Semiconductor Energy Laboratory Co., Ltd. Display device
US6927826B2 (en) 1997-03-26 2005-08-09 Semiconductor Energy Labaratory Co., Ltd. Display device
US7190428B2 (en) 1997-03-26 2007-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device
US7436463B2 (en) 1997-03-26 2008-10-14 Semiconductor Energy Laboratory Co., Ltd. Display device
US7508033B2 (en) 1998-04-24 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with diamond-like carbon film on backside of substrate
WO2011135908A1 (en) * 2010-04-30 2011-11-03 シャープ株式会社 Circuit board and display device
JP5275515B2 (en) * 2010-04-30 2013-08-28 シャープ株式会社 Circuit board and a display device
CN105575819A (en) * 2016-02-26 2016-05-11 华南理工大学 Metal oxide thin film transistor with top gate structure and manufacturing method thereof

Also Published As

Publication number Publication date
JPH0666471B2 (en) 1994-08-24

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term