JPH0215676A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPH0215676A
JPH0215676A JP16525188A JP16525188A JPH0215676A JP H0215676 A JPH0215676 A JP H0215676A JP 16525188 A JP16525188 A JP 16525188A JP 16525188 A JP16525188 A JP 16525188A JP H0215676 A JPH0215676 A JP H0215676A
Authority
JP
Japan
Prior art keywords
light shielding
shielding film
prevent
melting point
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16525188A
Inventor
Masaki Hiroi
Hiroshi Ikeguchi
Mamoru Ishida
Koji Mori
Yutaka Sano
Original Assignee
Ricoh Co Ltd
Ricoh Res Inst Of Gen Electron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd, Ricoh Res Inst Of Gen Electron filed Critical Ricoh Co Ltd
Priority to JP16525188A priority Critical patent/JPH0215676A/en
Publication of JPH0215676A publication Critical patent/JPH0215676A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To prevent an OFF-current from increasing due to the effect of photo- carriers by shielding light rays with a light shielding film so as to prevent the reduction in an Ion/off.
CONSTITUTION: A light shielding film 3 of a high melting point metal or an oxide of it is formed on an upper part or a lower part of a channel forming region provided with poly-Si which serves as an active layer 5. A high melting point metal such as Cr or W can be used as the light shielding film 3. And, it is preferable that an insulating film 4 is provided between the light shielding film 3 and a TFT section through an LPCVD method or the like to prevent an electrical contact between the light shielding film 3 and the active layer 5.
COPYRIGHT: (C)1990,JPO&Japio
JP16525188A 1988-07-01 1988-07-01 Thin film transistor Pending JPH0215676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16525188A JPH0215676A (en) 1988-07-01 1988-07-01 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16525188A JPH0215676A (en) 1988-07-01 1988-07-01 Thin film transistor

Publications (1)

Publication Number Publication Date
JPH0215676A true JPH0215676A (en) 1990-01-19

Family

ID=15808756

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16525188A Pending JPH0215676A (en) 1988-07-01 1988-07-01 Thin film transistor

Country Status (1)

Country Link
JP (1) JPH0215676A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335540B1 (en) 1993-06-24 2002-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
US6340830B1 (en) 1992-06-09 2002-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6501097B1 (en) 1994-04-29 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6835586B2 (en) 1998-12-25 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6914302B2 (en) 1998-12-18 2005-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7276730B2 (en) 1998-12-28 2007-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
US8158980B2 (en) 2001-04-19 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
US9482891B2 (en) 2014-03-28 2016-11-01 Nlt Technologies, Ltd. Liquid crystal display unit

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6340830B1 (en) 1992-06-09 2002-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6528852B2 (en) 1992-06-09 2003-03-04 Semiconductor Energy Laboratory Co., Ltd. Double gated electronic device and method of forming the same
US6815772B2 (en) 1992-06-09 2004-11-09 Semiconductor Energy Laboratory Co., Ltd. Dual gate MOSFET
US6335540B1 (en) 1993-06-24 2002-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
US6573589B2 (en) 1993-06-24 2003-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
US6501097B1 (en) 1994-04-29 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6914302B2 (en) 1998-12-18 2005-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6835586B2 (en) 1998-12-25 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7276730B2 (en) 1998-12-28 2007-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
US8643015B2 (en) 1998-12-28 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
US8158980B2 (en) 2001-04-19 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
US9482891B2 (en) 2014-03-28 2016-11-01 Nlt Technologies, Ltd. Liquid crystal display unit

Similar Documents

Publication Publication Date Title
TW283263B (en) Fabrication method of semiconductor device and field effect transistor
JPH03278466A (en) Thin film transistor and manufacture thereof
JPH04267563A (en) Thin film semiconductor device and method of manufacturing same
JPH0495930A (en) Liquid crystal display device and its manufacture
JPS59204274A (en) Thin film transistor
JPH02218166A (en) Thin film transistor
JPS62172713A (en) Manufacture of semiconductor device
CA2354139A1 (en) Display devices
JPH0442579A (en) Manufacture of thin film transistor
JPS6045219A (en) Active matrix type display device
JPS59208783A (en) Thin film transistor
EP0813251A3 (en) Thin-film transistor and display device using the same
JPH04286330A (en) Contact for integrated circuit
JPS62143476A (en) Semiconductor storage device
JPH02159730A (en) Formation of thin film transistor
JPS62188277A (en) Formation of low concentration doped structure
JPS5425178A (en) Manufacture for semiconductor device
JPH01173650A (en) Manufacture of amorphous silicon thin-film transistor
JPH04284649A (en) Antifuse
JPH03211885A (en) Semiconductor device and manufacture thereof
JPH03165575A (en) Thin film transistor and manufacture thereof
JPH0465879A (en) Nonvolatile semiconductor storage device
JPS56111258A (en) Thin film semiconductor device
JPS58142566A (en) Thin film semiconductor device
JPS5422781A (en) Insulator gate protective semiconductor device