JPS6121014B2 - - Google Patents
Info
- Publication number
- JPS6121014B2 JPS6121014B2 JP53067763A JP6776378A JPS6121014B2 JP S6121014 B2 JPS6121014 B2 JP S6121014B2 JP 53067763 A JP53067763 A JP 53067763A JP 6776378 A JP6776378 A JP 6776378A JP S6121014 B2 JPS6121014 B2 JP S6121014B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- current
- switch
- pnpn
- hfeq
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000015556 catabolic process Effects 0.000 description 10
- 230000003321 amplification Effects 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- 230000002457 bidirectional effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008094 contradictory effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
Landscapes
- Thyristor Switches And Gates (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6776378A JPS54159161A (en) | 1978-06-07 | 1978-06-07 | Semiconductor switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6776378A JPS54159161A (en) | 1978-06-07 | 1978-06-07 | Semiconductor switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54159161A JPS54159161A (en) | 1979-12-15 |
| JPS6121014B2 true JPS6121014B2 (cg-RX-API-DMAC7.html) | 1986-05-24 |
Family
ID=13354293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6776378A Granted JPS54159161A (en) | 1978-06-07 | 1978-06-07 | Semiconductor switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54159161A (cg-RX-API-DMAC7.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56111321A (en) * | 1980-02-08 | 1981-09-03 | Hitachi Ltd | Semiconductor switch |
-
1978
- 1978-06-07 JP JP6776378A patent/JPS54159161A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54159161A (en) | 1979-12-15 |
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