JPS61203668A - Image sensor - Google Patents
Image sensorInfo
- Publication number
- JPS61203668A JPS61203668A JP60045087A JP4508785A JPS61203668A JP S61203668 A JPS61203668 A JP S61203668A JP 60045087 A JP60045087 A JP 60045087A JP 4508785 A JP4508785 A JP 4508785A JP S61203668 A JPS61203668 A JP S61203668A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- amorphous silicon
- image sensor
- diode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 26
- 230000000903 blocking effect Effects 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 239000011521 glass Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 4
- 238000009751 slip forming Methods 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 229910001120 nichrome Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
- H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、マトリクス型イメージセンサに係わり、特に
マトリクスイメージセンサに使用されるフォトダイオー
ドとブロッキングダイオードを一体化して積層形成する
ことにより、マトリクスイメージセンサの製造工程の合
理化を計ったものである。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a matrix image sensor, and in particular, the present invention relates to a matrix image sensor, and in particular, a matrix image sensor is produced by integrating and stacking a photodiode and a blocking diode used in a matrix image sensor. This is an attempt to streamline the sensor manufacturing process.
近時、ファクシミリの普及により、使用されるイメージ
センサも多種にわたるが、アモルファスシリコンフォト
ダイオードを多数配列したイメージセンサは、その優れ
た性能によって広範囲に利用されている。Recently, with the spread of facsimiles, there are many different types of image sensors being used, and image sensors in which a large number of amorphous silicon photodiodes are arranged are widely used due to their excellent performance.
一方、イメージセンサの外部引出し線を減少するために
、フォトダイオードをマトリックス配列にして、それぞ
れのフォトダイオード間の漏洩電流を低減するために、
フォトダイオードとブロッキングダイオードを一対とし
た、マトリックス構造のイメージセンサが実用化されて
いる。On the other hand, in order to reduce the external lead wires of the image sensor, the photodiodes are arranged in a matrix, and in order to reduce the leakage current between each photodiode,
Image sensors with a matrix structure, which include a pair of photodiodes and blocking diodes, have been put into practical use.
然しながら、従来、このようなマトリックス構成のイメ
ージセンサでは、フォトダイオードとブロッキングダイ
オードが、基板上にそれぞれ独立に形成されているので
製造工程が複雑化し、又フォトダイオードと異なってブ
ロッキングダイオードでは、光が入射しないように、遮
光膜を形成する必要があって製造工程が煩雑になり、こ
れ等の改善が要望されている。However, in conventional image sensors with such a matrix configuration, the photodiode and the blocking diode are formed independently on the substrate, which complicates the manufacturing process.Also, unlike the photodiode, the blocking diode does not allow light to pass through. It is necessary to form a light-shielding film to prevent the light from entering, which complicates the manufacturing process, and there is a demand for improvements in this area.
第３図は、従来のフォトダイオードとブロッキングダイ
オードの構造を説明するための要部断面図である。FIG. 3 is a sectional view of a main part for explaining the structure of a conventional photodiode and a blocking diode.
ガラス基板１があって、その表面にフォトダイオードと
、ブロッキングダイオードが形成されているが、フォト
ダイオードではガラス基板１上に透明電極２として、例
えば酸化錫又はインジウム錫の酸化物が成膜され、その
表面にアモルファスシリコン層が、順次ｐＦｉｉ３、ｉ
Ｎ４、ｎ層５がそれぞれ１００人、５０００人、２００
人程鹿の厚みで形成されており、最上層に電極６として
例えばニクロム金属が形成されている。There is a glass substrate 1, on the surface of which a photodiode and a blocking diode are formed.In the photodiode, a film of tin oxide or indium tin oxide, for example, is formed as a transparent electrode 2 on the glass substrate 1. On its surface, an amorphous silicon layer is sequentially formed as pFii3,i
N4, N layer 5: 100, 5000, 200, respectively
The electrode 6 is formed on the top layer with a nichrome metal, for example, formed as the electrode 6.
ブロッキングダイオードは、透明電極７上に同様にアモ
ルファスシリコン層の９層８．１層９．１層１０と電極
１１が形成されていて、更に投射光を遮光するために遮
光膜１２が形成されている。The blocking diode has nine amorphous silicon layers 8, 1, 9, and 10 and an electrode 11 formed on the transparent electrode 7, and a light-shielding film 12 is further formed to block the projected light. There is.
これらフォトダイオードとブロッキングダイオードの表
面全体に、絶縁層１３が被膜された上、コンタクトホー
ル部を介して、電極配線１４がなされている。An insulating layer 13 is coated over the entire surface of these photodiodes and blocking diodes, and electrode wiring 14 is provided through contact holes.
このような、フォトダイオードと、ブロッキングダイオ
ードがそれぞれ独立に形成すると、製造工程が複雑にな
るのと、マトリックスに形成するための配線が不便であ
り、又遮光膜を形成しなければならないという欠点があ
る。When a photodiode and a blocking diode are formed independently, the manufacturing process becomes complicated, the wiring for forming them in a matrix is inconvenient, and a light-shielding film must be formed. be.
上記のイメージセンサでは、フォトダイオードとブロッ
キングダイオードが独立に形成されているために、製造
工程、電極の配線、遮光膜の形成等の複雑な工程を必要
とすることが問題である。In the above-mentioned image sensor, since the photodiode and the blocking diode are formed independently, there is a problem in that it requires complicated processes such as manufacturing process, electrode wiring, and formation of a light-shielding film.
本発明は、上記問題点を解消したイメージセンサを提供
するもので、その手段は、アモルファスシリコンフォト
ダイオードと、アモルファスシ、リコンブロッキングダ
イオードを、電極上に積層して、一体化したイメージセ
ンサによって達成できる。The present invention provides an image sensor that solves the above-mentioned problems, and is achieved by an integrated image sensor in which an amorphous silicon photodiode, an amorphous silicon photodiode, and an amorphous silicon blocking diode are stacked on an electrode. can.
本発明は、マトリクス型イメージセンサで、フォトダイ
オードとブロッキングダイオードが、それぞれ独立に形
成していたものを、一体化して形成するもので、光が入
射する透明電極上にフォトダイオード素子としてアモル
ファスシリコンのｎ−１−ｐ層を形成し、バッファ層と
してｎ層を形成し、その上にプロ７キングダイオード素
子としてアモルファスシリコン膜のｐ−１−ｎＪｉｔの
構造にすることにより、ｎ−ｉ −ｐ−ｎ−ｐ−ｔ−ｎ
層からなるフォトダイオードとブロッキングダイオード
が積層一体化されたイメージセンサが形成でき、製造工
程が容易になると共に、アモルファスシリコンのｎ層（
バッファ層）の膜厚を適切な厚みにすることにより、ブ
ロッキングダイオードに入射する光を遮光させることが
出来るし、更に完全に遮光するには、ｎ層の代わりに金
属遮光膜を形成してもよく、これによって、従来行って
いた遮光膜の形成を不要にしたものである。The present invention is a matrix-type image sensor in which a photodiode and a blocking diode, which were previously formed independently, are integrally formed, and an amorphous silicon photodiode element is placed on a transparent electrode into which light enters. By forming an n-1-p layer, forming an n layer as a buffer layer, and forming a p-1-nJit structure of an amorphous silicon film as a blocking diode element thereon, n-i-p- n-p-t-n
It is possible to form an image sensor in which a photodiode and a blocking diode are laminated into an integrated layer, which simplifies the manufacturing process.
By setting the film thickness of the buffer layer to an appropriate thickness, it is possible to block the light that enters the blocking diode.For even more complete light blocking, it is possible to form a metal light-shielding film instead of the n-layer. This makes it unnecessary to form a light-shielding film, which was conventionally done.
第１図（ａ）は、本発明によるアモルファスシリコンダ
イオードの製造方法を説明するための要部断面図である
。FIG. 1(a) is a sectional view of a main part for explaining the method of manufacturing an amorphous silicon diode according to the present invention.
ガラス基板２１上に、透明電極２２を形成し、その表面
に１層２３．１層２４．９層２５、バッファ層として１
層２６．９層２７．１層２８．１層２９のアモルファス
シリコンを連続的に成膜して、最上部に電極３０を形成
して完成するが、光はガラス基板側から矢印のように入
射する。A transparent electrode 22 is formed on a glass substrate 21, and one layer 23, one layer 24, nine layers 25, and one buffer layer are formed on the surface of the transparent electrode 22.
Layer 26.9 Layer 27.1 Layer 28.1 Layer 29 of amorphous silicon is successively deposited and an electrode 30 is formed on the top to complete the process, but light is incident from the glass substrate side as shown by the arrow. do.
第１図（ｂ）は、この構造における等価回路であり、基
板側の透明電極２２と、１層２３．１層２４．９層２５
がフォトダイオードＡとして動作することになり、１層
２６を介してその上層の９層２７．１層２８．１層２９
、上部電極３０によってブロッキングダイオードＢが形
成されることになる。FIG. 1(b) is an equivalent circuit in this structure, in which the transparent electrode 22 on the substrate side, 1 layer 23, 1 layer 24, 9 layers 25
will operate as a photodiode A, and the nine layers 27, 1 layer 28, 1 layer 29 above it will be
, a blocking diode B is formed by the upper electrode 30.
アモルファスシリコン層の１層２６は、プロフキングダ
イオード部の遮光を兼ねるために、厚みを少なくとも１
μＩ以上にする必要があるが、ｎ型アモルファスシリコ
ン層は、光の吸収が大きく、従来形成した遮光膜に比較
して遜色のない遮光性を有することになる。One layer 26 of the amorphous silicon layer has a thickness of at least 1 mm in order to also serve as a light shield for the profking diode part.
The n-type amorphous silicon layer has a large absorption of light and has a light-shielding property comparable to that of a conventionally formed light-shielding film, although it needs to be μI or more.
このように、フォトダイオードとブロッキングダイオー
ドを、同一基板領域に立体的に積層することにより、製
造工程が著しく簡略化されることになる。In this way, by three-dimensionally stacking the photodiode and the blocking diode on the same substrate area, the manufacturing process is significantly simplified.
第２図は、本発明の他の実施例を示す要部断面図である
。FIG. 2 is a sectional view of main parts showing another embodiment of the present invention.
ガラス基板３１上に、透明電極３２を形成し、その表面
にアモルファスシリコン膜を１層３３．１層３４．９層
３５を形成するが、その表面に遮光膜としてニクロム等
の遮光金属３９を蒸着等により、厚みが１０００人〜２
０００人形成した後に、９層４０．、ｉ層３６．０層３
７のアモルファスシリコンを連続的に成膜して、最後に
、上部電極３８を形成して完成するが、この場合には遮
光金属があるために、ガラス基板側から入射する光は完
全に遮光される。A transparent electrode 32 is formed on a glass substrate 31, and one layer 33, one layer 34, and nine layers 35 of amorphous silicon film are formed on the surface of the transparent electrode 32, and a light-shielding metal 39 such as nichrome is vapor-deposited on the surface as a light-shielding film. Depending on the thickness, the thickness is 1000 to 2
After forming 000 people, 9 layers 40. , i layer 36.0 layer 3
A film of amorphous silicon No. 7 is successively formed, and finally, the upper electrode 38 is formed to complete the process, but in this case, since there is a light-shielding metal, the light incident from the glass substrate side is completely blocked. Ru.
この構造では、透明電極３２と１層３３．１層３４．９
層３５がフォトダイオードとして動作し、その上層の９
層４０． を層３６．０層３７、上部電極３８によっ
てブロッキングダイオードが形成されている。In this structure, the transparent electrode 32 and one layer 33.1 layer 34.9
Layer 35 acts as a photodiode, and layer 9 above it acts as a photodiode.
Layer 40. The layer 36.0, the layer 37, and the upper electrode 38 form a blocking diode.
以上、詳細に説明したように、本発明のイメージセンサ
の構造は、製造方法が容易になり、安価なイメージセン
サを供し得るという効果大なるものがある。As described above in detail, the structure of the image sensor of the present invention has the great effect of simplifying the manufacturing method and providing an inexpensive image sensor.
第１図（ａ）と第１図山）は、本発明の実施例であるイ
メージセンサの構造を説明するための要部断面図、
第２図は、本発明の他の実施例であるイメージセンサの
構造を説明するための断面図、第３図は、従来の、イメ
ージセンサの構造を説明するための断面図、
図において、
２１はガラス基板、 ２２は透明電極、２３はｎ
型アモルファスシリコン膜、
２４はｉ型アモルファスシリコン膜、
２５はｐ型アモルファスシリコン膜、
２６はｎ型アモルファスシリコン膜、
２７はｐ型アモルファスシリコン膜、
２８はｉ型アモルファスシリコン膜、
２９はｎ型アモルファスシリコン膜、
３０は上部電極、
３９は遮光金属、
４０はｐ層のアモルファスシリコン膜、をそれぞれ示し
ている。
第１図（０）
第２ＦＩ！Ｊ
第３図1(a) and 1) are sectional views of main parts for explaining the structure of an image sensor that is an embodiment of the present invention, and FIG. 2 is an image that is another embodiment of the present invention. FIG. 3 is a cross-sectional view for explaining the structure of a sensor, and FIG. 3 is a cross-sectional view for explaining the structure of a conventional image sensor. In the figure, 21 is a glass substrate, 22 is a transparent electrode, and 23 is an n
24 is an i-type amorphous silicon film, 25 is a p-type amorphous silicon film, 26 is an n-type amorphous silicon film, 27 is a p-type amorphous silicon film, 28 is an i-type amorphous silicon film, 29 is an n-type amorphous silicon film A silicon film, 30 is an upper electrode, 39 is a light-shielding metal, and 40 is a p-layer amorphous silicon film. Figure 1 (0) 2nd FI! J Figure 3
Claims (1)
スシリコンブロッキングダイオードを、電極上に積層し
て一体化したことを特徴とするイメージセンサ。An image sensor characterized by integrating an amorphous silicon photodiode and an amorphous silicon blocking diode by stacking them on an electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60045087A JPS61203668A (en) | 1985-03-06 | 1985-03-06 | Image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60045087A JPS61203668A (en) | 1985-03-06 | 1985-03-06 | Image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61203668A true JPS61203668A (en) | 1986-09-09 |
Family
ID=12709538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60045087A Pending JPS61203668A (en) | 1985-03-06 | 1985-03-06 | Image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61203668A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01278079A (en) * | 1988-04-29 | 1989-11-08 | Kyocera Corp | Photosensor |
| WO1993026046A1 (en) * | 1992-06-15 | 1993-12-23 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Semiconductor device |
| EP0601200A1 (en) * | 1992-06-15 | 1994-06-15 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Semiconductor device |
| US6157072A (en) * | 1991-04-27 | 2000-12-05 | Kanegafuchi Chemical Industry Co., Ltd. | Image sensor |
| WO2018131638A1 (en) * | 2017-01-15 | 2018-07-19 | 一般財団法人 総合研究奨励会 | Photodetector array |
-
1985
- 1985-03-06 JP JP60045087A patent/JPS61203668A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01278079A (en) * | 1988-04-29 | 1989-11-08 | Kyocera Corp | Photosensor |
| US6157072A (en) * | 1991-04-27 | 2000-12-05 | Kanegafuchi Chemical Industry Co., Ltd. | Image sensor |
| WO1993026046A1 (en) * | 1992-06-15 | 1993-12-23 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Semiconductor device |
| EP0601200A1 (en) * | 1992-06-15 | 1994-06-15 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Semiconductor device |
| EP0601200A4 (en) * | 1992-06-15 | 1994-10-26 | Kanegafuchi Chemical Ind | Semiconductor device. |
| WO2018131638A1 (en) * | 2017-01-15 | 2018-07-19 | 一般財団法人 総合研究奨励会 | Photodetector array |
| JPWO2018131638A1 (en) * | 2017-01-15 | 2019-11-07 | サイントル株式会社 | Photodetector array |
| US10991764B2 (en) | 2017-01-15 | 2021-04-27 | Signtle Inc. | Photodetector array |
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