JPS61171161A - One-dimensional image sensor - Google Patents
One-dimensional image sensorInfo
- Publication number
- JPS61171161A JPS61171161A JP60010834A JP1083485A JPS61171161A JP S61171161 A JPS61171161 A JP S61171161A JP 60010834 A JP60010834 A JP 60010834A JP 1083485 A JP1083485 A JP 1083485A JP S61171161 A JPS61171161 A JP S61171161A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- patterned
- image sensor
- dimensional image
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 9
- 239000011521 glass Substances 0.000 abstract description 2
- 238000001020 plasma etching Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract 2
- 208000032366 Oversensing Diseases 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はファクシミリ用等の一次元イメージセンサに係
り、特に高解像度な画像読み取り装置に好適な順次駆動
方式−次元イメージセンサに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a one-dimensional image sensor for facsimile and the like, and particularly to a sequential drive type-dimensional image sensor suitable for a high-resolution image reading device.
従来の装置は、特開昭５８−２０４５６６号に記載のよ
うに、非晶質水素化シリコン光導電膜（以下、ａ−８ｉ
と記す）を、下部成極上にマスクＣＶＤ法等によシ形成
していた。すなわち、ａ−８ｉけ１下部電極ストライプ
間にまたがって形成されていた。ａ−３ｉの比抗抗は１
０１０Ω・α、誘電率は１ｉ程度であるため、蓄積時定
数はＩＱｍｓ程度あＪ）、５ｍｓ以下の読み取り速度全
要求される一次元イメージセンサには十分である。しか
しながら、光照射による電荷の発生は、透明電極下のみ
ならず透明電極が被着していない部分のａ−３ｉ中でも
生ずる。筆者の実験によれば、ｇ１図において、ｅ＝１
２５μｍ、９２１２５μｍ、ｄ＝０．５■に一定とした
時、ｐ−Ｗ（すなわち、下部電極間の間隙）ｔ−１０μ
ｍから１００ ａｍ迄変化嘔せたが、その光電流値は、
Ｉ Ｔｏ （ｉｎｄｉｕｍ’ｌ’ｉｌ Ｑｘｉｄｅ ）
と下部電極の間の光電流を１とした時、第２図のごとく
なり、はとんど同程度であることがわかった。すなわち
、この部分での光電流のりａストークは極めて大きく、
実用上解像度を向上させることは極めて困難である。The conventional device uses an amorphous hydrogenated silicon photoconductive film (hereinafter referred to as a-8i
) was formed on the lower electrode layer by a mask CVD method or the like. In other words, it was formed across the A-8i lower electrode stripes. The specific resistance of a-3i is 1
Since the dielectric constant is about 1i, the storage time constant is about IQms (J), which is sufficient for a one-dimensional image sensor that requires a reading speed of 5ms or less. However, the generation of charges due to light irradiation occurs not only under the transparent electrode but also in the portion a-3i where the transparent electrode is not attached. According to the author's experiments, in the g1 diagram, e=1
When constant at 25μm, 92125μm, d=0.5■, p-W (i.e. gap between lower electrodes) t-10μ
The photocurrent value varied from m to 100 am, but the photocurrent value was
I To (indium'l'il Qxide)
When the photocurrent between the two electrodes and the lower electrode is set to 1, the results are shown in Figure 2, and it was found that the photocurrents are almost the same. In other words, the photocurrent a stalk in this part is extremely large,
It is extremely difficult to improve resolution in practice.
一方、この種のクロストークをまったく生じない構造と
して、特開昭第５８−５６３６３号公報に記載された第
３図に示す如きものが提案されている。On the other hand, as a structure that does not cause this type of crosstalk at all, a structure as shown in FIG. 3 described in Japanese Patent Application Laid-Open No. 58-56363 has been proposed.
これは、ａ−３ｉのｐｉｎダイオードを便りため、ａ−
３ｉ膜は各画素ごとに分離している。したがって、クロ
ストークはまったく発生しないが、各画素ごとに分離さ
れているａ−３ｉの上層に抵抗の低いｐ層があり、下層
にも低抵抗のｎ層があるため、これを介して、上部電極
と下部電極が短絡するのを防止するために、ａ−３ｉの
エツジ部分が５ｉ（ｈ膜４によって被覆されている。こ
の方式の欠点は、５ｉ０１膜４をスパッタ法によりａ−
８ｉ上に被覆する際、ａ−３ｉに対してスパッタリング
によるダメージを与えること、ｓｊＯ鵞膜４を堆積し、
エツチングするという工程が必要なことである。This is based on the pin diode of a-3i, so a-
The 3i film is separated for each pixel. Therefore, no crosstalk occurs at all, but since there is a low-resistance p-layer on the upper layer of the a-3i that is separated from each pixel, and there is also a low-resistance n-layer on the lower layer, the upper In order to prevent short circuit between the electrode and the lower electrode, the edge portion of a-3i is covered with a 5i (h film 4).The disadvantage of this method is that the 5i01 film 4 is coated with a-
When coating on 8i, damage to a-3i by sputtering, depositing sjO film 4,
This requires an etching process.
本発明の目的は簡単な工程でクロストークのない一次元
イメージセンサを提供することにある。An object of the present invention is to provide a one-dimensional image sensor without crosstalk through simple steps.
高抵抗なａ−：ｄｉはそれ自体をパターン化した場合、
ｐｉｎ構造と異なって、エツジ部に電極を被着しても上
下の電極が短絡することはない。さらに、下部電極にＣ
ｒを使用し、これをノくターン化した上にａ−８ｉを積
層し、その上にＩＴＯ透明電極を被着して、暗時の電流
値を測定し、パターン化しないＣｒ膜を使用した場合と
比較したところ、ａ−８ｉ膜厚０．６＃ｍ％Ｃｒ膜厚０
゜２ａｍの時、印加電圧５ｖ以下では電流値に変化が見
られないことがわかった。ちなみに、ａ−８ｉをｐｉｎ
（ｐ層膜厚３００Ａ１１層０．５５９ｍ５ｒ１層２００
人）構造とした場合は、２桁以上の電流値の増加が見ら
れ、この構造の場合、段差部で電流が集中して流れる。When high resistance a-:di is patterned itself,
Unlike the pin structure, even if electrodes are attached to the edge portions, the upper and lower electrodes will not be short-circuited. Furthermore, C
A-8i was laminated on top of this, and an ITO transparent electrode was deposited on top of it, and the current value in the dark was measured, and a non-patterned Cr film was used. When compared with the case, a-8i film thickness is 0.6#m%Cr film thickness is 0
It was found that when the applied voltage was 5 V or less, no change was observed in the current value at 2 am. By the way, pin the a-8i
(p layer thickness: 300 A, 11 layers, 0.559 m, 5 r, 1 layer, 200
In the case of the structure, the current value increases by more than two orders of magnitude, and in this structure, the current flows in a concentrated manner at the stepped portion.
これらの事実から、ａ−３ｉをパターン化し、Ｃｒｋ下
部電極、ＩＴＯｌ−上部電極とする画素構造とすれば良
いと考えられる。From these facts, it is considered that a-3i may be patterned to form a pixel structure in which a Crk lower electrode and an ITOl upper electrode are formed.
以下、本発明の一実施例を第４図により説明す
Ｊる。An embodiment of the present invention will be explained below with reference to FIG.
Jru.
ガラス基板５上に、Ｃｒ膜を厚さ０．２μｍにスパッタ
法によシ堆積した。次に、通常のホトエツチング法によ
り、Ｃｒ ｌｉｉ ｆ パターン化し下部電極１とした
。次に、プラズマＣＶＤ法により、ａ−８ｉを厚さ１μ
ｍに堆積した。さらに、ＣＦ ａガスを使って、プラズ
マエツチング法により、ａ−３ｉをパターン化し光導電
膜２とした。七の除、Ｃｒ寛極１の３方のエツジを被覆
するようにパターン化した。次に、ＩＴＯ？堆積し、通
常のホトエツチングによって、ＩＴＯ？パターン化して
上部電極３とした。A Cr film was deposited on the glass substrate 5 to a thickness of 0.2 μm by sputtering. Next, the lower electrode 1 was formed into a Cr lii f pattern by a normal photoetching method. Next, by plasma CVD method, a-8i was coated with a thickness of 1 μm.
It was deposited in m. Further, a-3i was patterned to form a photoconductive film 2 by plasma etching using CFa gas. It was patterned so as to cover the edges of 3 sides of the Cr-tolerant electrode 1. Next, ITO? By depositing and conventional photoetching, ITO? It was patterned to form the upper electrode 3.
本構造によれば、ａ−８ｉ膜２が各画素ととに独立して
いるため、画素間分離は完全であり、クロストークはな
い。さらｇ、ａ−３ｉがＩＴＯとＣｒを完全に分離して
いるため、ａ−８ｉのエツジ部の被覆のために８ｉ０２
パターンを形成する必要はなく、工程は極めて単純化さ
れる。第５図は、第４図のｘ−ｘ’面断面図である。第
４図と同−符号部は同一部分を示す。According to this structure, since the a-8i film 2 is independent of each pixel, the separation between pixels is perfect and there is no crosstalk. Furthermore, since A-3i completely separates ITO and Cr, 8i02 was used to cover the edges of A-8i.
There is no need to form a pattern, and the process is extremely simplified. FIG. 5 is a sectional view taken along line xx' in FIG. 4. The same reference numerals as in FIG. 4 indicate the same parts.
第５図に示すように、極めて簡単な構成で、良好な特性
の菓子を得られる。As shown in FIG. 5, confectionery with good properties can be obtained with an extremely simple structure.
本発明に、よれば、クロストークのまったくない一次元
イメージセンサヲ簡単なプロセスで形成できる。According to the present invention, a one-dimensional image sensor with no crosstalk can be formed by a simple process.
なお、本実施例では、ＩＴＯｌ−ホトエツチングにより
加工したが、このパターンは寸法が大きいため、例えば
、マスクスパッタやマスクＣＶＤ０様な方法で形成して
も良い。さらに、透明電極として、ＩＴＯ以外のＳ ｎ
Ｏ鵞、 Ｉ ｎ＊Ｏｓなども使用可能である。In this embodiment, the pattern was processed by ITOl-photoetching, but since this pattern is large in size, it may be formed by a method such as mask sputtering or mask CVD0, for example. Furthermore, as a transparent electrode, S n other than ITO can be used.
Ogo, In*Os, etc. can also be used.
また、ここでは、光導電膜としてａ−８ｉの単層膜を使
用したが、これのかわりに、８ ’３Ｎ４ ＃８ｉ０鵞
などの絶縁膜からなるブロッキング層とａ−８ｉなどの
光導電膜を積層してもやはシ同じ構造が形成できること
は言う迄もない。In addition, here, a single layer film of a-8i was used as the photoconductive film, but instead of this, a blocking layer made of an insulating film such as 8'3N4 #8i0 and a photoconductive film such as a-8i were used. It goes without saying that the same structure can be formed by laminating them.
第１図は従来センサの平面図、第２図は電極のギャップ
とクロストークの関係を示す測定データ、第３図は他の
従来センサの断面図、第４図は本発明によるセンサの平
面図、第５図は本発明によるセンサの断面図である。
１・・・下部電極、２・・・ａ−８ｉ膜、３・・・ＩＴ
Ｏ透明第１囚
Ｐ−ｗ （声ルノ
４４目
算５日Fig. 1 is a plan view of a conventional sensor, Fig. 2 is measurement data showing the relationship between electrode gap and crosstalk, Fig. 3 is a sectional view of another conventional sensor, and Fig. 4 is a plan view of a sensor according to the present invention. , FIG. 5 is a cross-sectional view of a sensor according to the invention. 1... Lower electrode, 2... a-8i film, 3... IT
O Transparent 1st Prisoner P-w (Voice Runo 44 days count 5 days)
Claims (1)
晶質水素化シリコン光導電膜を形成し、上部共通電極に
透明電極を形成することにより、光電変換部を形成した
一次元イメージセンサにおいて、前記非晶質水素化シリ
コン光導電膜を下部電極間の間隙部で切断し、その上に
上部透明電極を形成したことを特徴とする一次元イメー
ジセンサ。In a one-dimensional image sensor in which a photoelectric conversion section is formed by forming at least a high-resistance amorphous hydrogenated silicon photoconductive film on the striped lower electrode and forming a transparent electrode on the upper common electrode, A one-dimensional image sensor characterized in that a crystalline hydrogenated silicon photoconductive film is cut at a gap between lower electrodes, and an upper transparent electrode is formed thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60010834A JPS61171161A (en) | 1985-01-25 | 1985-01-25 | One-dimensional image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60010834A JPS61171161A (en) | 1985-01-25 | 1985-01-25 | One-dimensional image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61171161A true JPS61171161A (en) | 1986-08-01 |
Family
ID=11761380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60010834A Pending JPS61171161A (en) | 1985-01-25 | 1985-01-25 | One-dimensional image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61171161A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6367772A (en) * | 1986-09-09 | 1988-03-26 | Fuji Xerox Co Ltd | Image sensor and manufacture of same |
| JPH01117059A (en) * | 1987-10-30 | 1989-05-09 | Toshiba Corp | Image sensor |
| JPH02162765A (en) * | 1988-12-15 | 1990-06-22 | Kanegafuchi Chem Ind Co Ltd | Linear image sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56136076A (en) * | 1980-03-26 | 1981-10-23 | Hitachi Ltd | Photoelectric converter |
| JPS59143362A (en) * | 1983-02-03 | 1984-08-16 | Fuji Xerox Co Ltd | Passivation film |
-
1985
- 1985-01-25 JP JP60010834A patent/JPS61171161A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56136076A (en) * | 1980-03-26 | 1981-10-23 | Hitachi Ltd | Photoelectric converter |
| JPS59143362A (en) * | 1983-02-03 | 1984-08-16 | Fuji Xerox Co Ltd | Passivation film |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6367772A (en) * | 1986-09-09 | 1988-03-26 | Fuji Xerox Co Ltd | Image sensor and manufacture of same |
| JPH01117059A (en) * | 1987-10-30 | 1989-05-09 | Toshiba Corp | Image sensor |
| JPH02162765A (en) * | 1988-12-15 | 1990-06-22 | Kanegafuchi Chem Ind Co Ltd | Linear image sensor |
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