JPS61194695A - ワ−ド線クランプ回路 - Google Patents

ワ−ド線クランプ回路

Info

Publication number
JPS61194695A
JPS61194695A JP60034164A JP3416485A JPS61194695A JP S61194695 A JPS61194695 A JP S61194695A JP 60034164 A JP60034164 A JP 60034164A JP 3416485 A JP3416485 A JP 3416485A JP S61194695 A JPS61194695 A JP S61194695A
Authority
JP
Japan
Prior art keywords
word line
mos transistor
transistor
circuit
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60034164A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0334151B2 (enExample
Inventor
Junzo Yamada
順三 山田
Tsuneo Mano
真野　恒夫
Nobuaki Ieda
家田　信明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP60034164A priority Critical patent/JPS61194695A/ja
Publication of JPS61194695A publication Critical patent/JPS61194695A/ja
Publication of JPH0334151B2 publication Critical patent/JPH0334151B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Dram (AREA)
JP60034164A 1985-02-22 1985-02-22 ワ−ド線クランプ回路 Granted JPS61194695A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60034164A JPS61194695A (ja) 1985-02-22 1985-02-22 ワ−ド線クランプ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60034164A JPS61194695A (ja) 1985-02-22 1985-02-22 ワ−ド線クランプ回路

Publications (2)

Publication Number Publication Date
JPS61194695A true JPS61194695A (ja) 1986-08-29
JPH0334151B2 JPH0334151B2 (enExample) 1991-05-21

Family

ID=12406567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60034164A Granted JPS61194695A (ja) 1985-02-22 1985-02-22 ワ−ド線クランプ回路

Country Status (1)

Country Link
JP (1) JPS61194695A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62103897A (ja) * 1985-07-01 1987-05-14 Nec Corp メモリ回路
US5113374A (en) * 1989-08-30 1992-05-12 Nec Corporation Mos type semiconductor memory device having a word line resetting circuit
US5363331A (en) * 1991-12-24 1994-11-08 Oki Electric Industry Co., Ltd. Semiconductor memory with column line control circuits for protection against broken column lines
JPH07130173A (ja) * 1993-11-04 1995-05-19 Nec Corp 半導体メモリ装置
JP2001167577A (ja) * 1999-10-29 2001-06-22 Infineon Technologies Ag 集積メモリ
US6542427B2 (en) * 2001-03-08 2003-04-01 Micron Technology, Inc. Power validation for memory devices on power up

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62103897A (ja) * 1985-07-01 1987-05-14 Nec Corp メモリ回路
US5113374A (en) * 1989-08-30 1992-05-12 Nec Corporation Mos type semiconductor memory device having a word line resetting circuit
US5363331A (en) * 1991-12-24 1994-11-08 Oki Electric Industry Co., Ltd. Semiconductor memory with column line control circuits for protection against broken column lines
JPH07130173A (ja) * 1993-11-04 1995-05-19 Nec Corp 半導体メモリ装置
JP2001167577A (ja) * 1999-10-29 2001-06-22 Infineon Technologies Ag 集積メモリ
US6542427B2 (en) * 2001-03-08 2003-04-01 Micron Technology, Inc. Power validation for memory devices on power up
US6731562B2 (en) 2001-03-08 2004-05-04 Micron Technology, Inc. Power validation for memory devices on power up

Also Published As

Publication number Publication date
JPH0334151B2 (enExample) 1991-05-21

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