JPS61190973A - 静電破壊防止素子 - Google Patents

静電破壊防止素子

Info

Publication number
JPS61190973A
JPS61190973A JP60030393A JP3039385A JPS61190973A JP S61190973 A JPS61190973 A JP S61190973A JP 60030393 A JP60030393 A JP 60030393A JP 3039385 A JP3039385 A JP 3039385A JP S61190973 A JPS61190973 A JP S61190973A
Authority
JP
Japan
Prior art keywords
island
conductivity type
electrostatic breakdown
prevention element
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60030393A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0566741B2 (enrdf_load_stackoverflow
Inventor
Yoshinori Akamatsu
由規 赤松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP60030393A priority Critical patent/JPS61190973A/ja
Publication of JPS61190973A publication Critical patent/JPS61190973A/ja
Publication of JPH0566741B2 publication Critical patent/JPH0566741B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP60030393A 1985-02-20 1985-02-20 静電破壊防止素子 Granted JPS61190973A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60030393A JPS61190973A (ja) 1985-02-20 1985-02-20 静電破壊防止素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60030393A JPS61190973A (ja) 1985-02-20 1985-02-20 静電破壊防止素子

Publications (2)

Publication Number Publication Date
JPS61190973A true JPS61190973A (ja) 1986-08-25
JPH0566741B2 JPH0566741B2 (enrdf_load_stackoverflow) 1993-09-22

Family

ID=12302678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60030393A Granted JPS61190973A (ja) 1985-02-20 1985-02-20 静電破壊防止素子

Country Status (1)

Country Link
JP (1) JPS61190973A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04167563A (ja) * 1990-10-31 1992-06-15 Nec Corp 半導体装置の保護回路
WO1999017369A1 (de) * 1997-09-30 1999-04-08 Infineon Technologies Ag Integrierte halbleiterschaltung mit schutzstruktur zum schutz vor elektrostatischer entladung
JP2008147527A (ja) * 2006-12-12 2008-06-26 Toyota Central R&D Labs Inc 静電気保護用半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04167563A (ja) * 1990-10-31 1992-06-15 Nec Corp 半導体装置の保護回路
WO1999017369A1 (de) * 1997-09-30 1999-04-08 Infineon Technologies Ag Integrierte halbleiterschaltung mit schutzstruktur zum schutz vor elektrostatischer entladung
US6441437B1 (en) * 1997-09-30 2002-08-27 Infineon Technologies Ag Integrated semiconductor circuit with protective structure for protection against electrostatic discharge
JP2008147527A (ja) * 2006-12-12 2008-06-26 Toyota Central R&D Labs Inc 静電気保護用半導体装置

Also Published As

Publication number Publication date
JPH0566741B2 (enrdf_load_stackoverflow) 1993-09-22

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