JPS61190132U - - Google Patents
Info
- Publication number
- JPS61190132U JPS61190132U JP7434985U JP7434985U JPS61190132U JP S61190132 U JPS61190132 U JP S61190132U JP 7434985 U JP7434985 U JP 7434985U JP 7434985 U JP7434985 U JP 7434985U JP S61190132 U JPS61190132 U JP S61190132U
- Authority
- JP
- Japan
- Prior art keywords
- correction plate
- reactive ion
- ion etching
- etched
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 10
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7434985U JPS61190132U (enrdf_load_stackoverflow) | 1985-05-20 | 1985-05-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7434985U JPS61190132U (enrdf_load_stackoverflow) | 1985-05-20 | 1985-05-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61190132U true JPS61190132U (enrdf_load_stackoverflow) | 1986-11-27 |
Family
ID=30614564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7434985U Pending JPS61190132U (enrdf_load_stackoverflow) | 1985-05-20 | 1985-05-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61190132U (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62108527A (ja) * | 1985-11-06 | 1987-05-19 | Anelva Corp | ドライエツチング装置 |
| JPH01298182A (ja) * | 1988-05-27 | 1989-12-01 | Hitachi Ltd | エッチング装置 |
-
1985
- 1985-05-20 JP JP7434985U patent/JPS61190132U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62108527A (ja) * | 1985-11-06 | 1987-05-19 | Anelva Corp | ドライエツチング装置 |
| JPH01298182A (ja) * | 1988-05-27 | 1989-12-01 | Hitachi Ltd | エッチング装置 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS627272B2 (enrdf_load_stackoverflow) | ||
| US6167835B1 (en) | Two chamber plasma processing apparatus | |
| JPS6337193B2 (enrdf_load_stackoverflow) | ||
| JPS61190132U (enrdf_load_stackoverflow) | ||
| US5330615A (en) | Symmetric double water plasma etching system | |
| JPS57210631A (en) | Reactive type ion etching method | |
| JPH074718B2 (ja) | 静電吸着装置 | |
| JPS6247131A (ja) | 反応性イオンエツチング装置 | |
| JPS5647572A (en) | Etching method of indium oxide film | |
| JPH0573051B2 (enrdf_load_stackoverflow) | ||
| JPS6423537A (en) | Plasma processing device | |
| JPS629324Y2 (enrdf_load_stackoverflow) | ||
| JPH0425017A (ja) | 真空成膜装置 | |
| JPS61113235A (ja) | プラズマエツチング装置 | |
| JPS59217330A (ja) | 反応性イオンエツチング装置 | |
| JPH0451473Y2 (enrdf_load_stackoverflow) | ||
| JPS57143827A (en) | Parallel, flat electrode | |
| JPS6126223A (ja) | エツチング方法および装置 | |
| JPS57114231A (en) | Plasma etching device | |
| JPH01238120A (ja) | エッチング装置 | |
| JPS61128526A (ja) | プラズマエツチング装置 | |
| TWM665816U (zh) | 靜電吸盤及電漿處理裝置 | |
| JPS63292625A (ja) | プラズマ制御方法 | |
| JPS61272928A (ja) | ドライエツチング方法 | |
| JPS57170536A (en) | Dry etching method |