JPS6118878B2 - - Google Patents
Info
- Publication number
- JPS6118878B2 JPS6118878B2 JP14685578A JP14685578A JPS6118878B2 JP S6118878 B2 JPS6118878 B2 JP S6118878B2 JP 14685578 A JP14685578 A JP 14685578A JP 14685578 A JP14685578 A JP 14685578A JP S6118878 B2 JPS6118878 B2 JP S6118878B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- layer
- type
- refractive index
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 37
- 239000007791 liquid phase Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14685578A JPS5574193A (en) | 1978-11-28 | 1978-11-28 | Manufacturing semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14685578A JPS5574193A (en) | 1978-11-28 | 1978-11-28 | Manufacturing semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5574193A JPS5574193A (en) | 1980-06-04 |
| JPS6118878B2 true JPS6118878B2 (enrdf_load_stackoverflow) | 1986-05-14 |
Family
ID=15417070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14685578A Granted JPS5574193A (en) | 1978-11-28 | 1978-11-28 | Manufacturing semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5574193A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5769793A (en) * | 1980-10-16 | 1982-04-28 | Mitsubishi Electric Corp | Semiconductor laser device |
-
1978
- 1978-11-28 JP JP14685578A patent/JPS5574193A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5574193A (en) | 1980-06-04 |
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