JPS61186280A - 多元半導体単結晶の育成方法 - Google Patents
多元半導体単結晶の育成方法Info
- Publication number
- JPS61186280A JPS61186280A JP2547285A JP2547285A JPS61186280A JP S61186280 A JPS61186280 A JP S61186280A JP 2547285 A JP2547285 A JP 2547285A JP 2547285 A JP2547285 A JP 2547285A JP S61186280 A JPS61186280 A JP S61186280A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- solvent
- ampoule
- seed
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 102
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 239000003708 ampul Substances 0.000 claims abstract description 55
- 239000000463 material Substances 0.000 claims abstract description 44
- 239000002904 solvent Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000002994 raw material Substances 0.000 claims abstract description 11
- 238000007789 sealing Methods 0.000 claims abstract description 11
- 238000009826 distribution Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000003780 insertion Methods 0.000 abstract 1
- 230000037431 insertion Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 239000002178 crystalline material Substances 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000155 melt Substances 0.000 description 3
- 230000004308 accommodation Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 101000927774 Homo sapiens Rho guanine nucleotide exchange factor 12 Proteins 0.000 description 1
- 102100033193 Rho guanine nucleotide exchange factor 12 Human genes 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2547285A JPS61186280A (ja) | 1985-02-13 | 1985-02-13 | 多元半導体単結晶の育成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2547285A JPS61186280A (ja) | 1985-02-13 | 1985-02-13 | 多元半導体単結晶の育成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61186280A true JPS61186280A (ja) | 1986-08-19 |
| JPH0132200B2 JPH0132200B2 (cg-RX-API-DMAC10.html) | 1989-06-29 |
Family
ID=12166978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2547285A Granted JPS61186280A (ja) | 1985-02-13 | 1985-02-13 | 多元半導体単結晶の育成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61186280A (cg-RX-API-DMAC10.html) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5332899A (en) * | 1976-09-08 | 1978-03-28 | Hitachi Ltd | Production of ferrite single crystal |
| JPS5752573U (cg-RX-API-DMAC10.html) * | 1980-09-12 | 1982-03-26 |
-
1985
- 1985-02-13 JP JP2547285A patent/JPS61186280A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5332899A (en) * | 1976-09-08 | 1978-03-28 | Hitachi Ltd | Production of ferrite single crystal |
| JPS5752573U (cg-RX-API-DMAC10.html) * | 1980-09-12 | 1982-03-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0132200B2 (cg-RX-API-DMAC10.html) | 1989-06-29 |
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