JPH0132200B2 - - Google Patents

Info

Publication number
JPH0132200B2
JPH0132200B2 JP60025472A JP2547285A JPH0132200B2 JP H0132200 B2 JPH0132200 B2 JP H0132200B2 JP 60025472 A JP60025472 A JP 60025472A JP 2547285 A JP2547285 A JP 2547285A JP H0132200 B2 JPH0132200 B2 JP H0132200B2
Authority
JP
Japan
Prior art keywords
crystal
ampoule
solvent
seed
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60025472A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61186280A (ja
Inventor
Yoshio Fujino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP2547285A priority Critical patent/JPS61186280A/ja
Publication of JPS61186280A publication Critical patent/JPS61186280A/ja
Publication of JPH0132200B2 publication Critical patent/JPH0132200B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP2547285A 1985-02-13 1985-02-13 多元半導体単結晶の育成方法 Granted JPS61186280A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2547285A JPS61186280A (ja) 1985-02-13 1985-02-13 多元半導体単結晶の育成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2547285A JPS61186280A (ja) 1985-02-13 1985-02-13 多元半導体単結晶の育成方法

Publications (2)

Publication Number Publication Date
JPS61186280A JPS61186280A (ja) 1986-08-19
JPH0132200B2 true JPH0132200B2 (cg-RX-API-DMAC10.html) 1989-06-29

Family

ID=12166978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2547285A Granted JPS61186280A (ja) 1985-02-13 1985-02-13 多元半導体単結晶の育成方法

Country Status (1)

Country Link
JP (1) JPS61186280A (cg-RX-API-DMAC10.html)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5332899A (en) * 1976-09-08 1978-03-28 Hitachi Ltd Production of ferrite single crystal
JPS5752573U (cg-RX-API-DMAC10.html) * 1980-09-12 1982-03-26

Also Published As

Publication number Publication date
JPS61186280A (ja) 1986-08-19

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