JPS61174773A - 電界効果トランジスタの製造方法 - Google Patents

電界効果トランジスタの製造方法

Info

Publication number
JPS61174773A
JPS61174773A JP60017802A JP1780285A JPS61174773A JP S61174773 A JPS61174773 A JP S61174773A JP 60017802 A JP60017802 A JP 60017802A JP 1780285 A JP1780285 A JP 1780285A JP S61174773 A JPS61174773 A JP S61174773A
Authority
JP
Japan
Prior art keywords
thin film
semi
gate
metal thin
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60017802A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0322696B2 (enrdf_load_stackoverflow
Inventor
Yasuharu Nakajima
康晴 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60017802A priority Critical patent/JPS61174773A/ja
Publication of JPS61174773A publication Critical patent/JPS61174773A/ja
Publication of JPH0322696B2 publication Critical patent/JPH0322696B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP60017802A 1985-01-30 1985-01-30 電界効果トランジスタの製造方法 Granted JPS61174773A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60017802A JPS61174773A (ja) 1985-01-30 1985-01-30 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60017802A JPS61174773A (ja) 1985-01-30 1985-01-30 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS61174773A true JPS61174773A (ja) 1986-08-06
JPH0322696B2 JPH0322696B2 (enrdf_load_stackoverflow) 1991-03-27

Family

ID=11953848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60017802A Granted JPS61174773A (ja) 1985-01-30 1985-01-30 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS61174773A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6276566A (ja) * 1986-08-27 1987-04-08 Toshiba Corp 電界効果トランジスタの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6276566A (ja) * 1986-08-27 1987-04-08 Toshiba Corp 電界効果トランジスタの製造方法

Also Published As

Publication number Publication date
JPH0322696B2 (enrdf_load_stackoverflow) 1991-03-27

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