JPS6116099A - ダイナミック型半導体記憶装置 - Google Patents

ダイナミック型半導体記憶装置

Info

Publication number
JPS6116099A
JPS6116099A JP59136110A JP13611084A JPS6116099A JP S6116099 A JPS6116099 A JP S6116099A JP 59136110 A JP59136110 A JP 59136110A JP 13611084 A JP13611084 A JP 13611084A JP S6116099 A JPS6116099 A JP S6116099A
Authority
JP
Japan
Prior art keywords
bit line
memory cell
potential
bit lines
complementary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59136110A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0414436B2 (enExample
Inventor
Yoshii Oota
佳似 太田
Toshio Mitsumoto
三本　敏夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59136110A priority Critical patent/JPS6116099A/ja
Publication of JPS6116099A publication Critical patent/JPS6116099A/ja
Priority to US07/154,442 priority patent/US5329479A/en
Publication of JPH0414436B2 publication Critical patent/JPH0414436B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP59136110A 1984-06-29 1984-06-29 ダイナミック型半導体記憶装置 Granted JPS6116099A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59136110A JPS6116099A (ja) 1984-06-29 1984-06-29 ダイナミック型半導体記憶装置
US07/154,442 US5329479A (en) 1984-06-29 1988-02-08 Dynamic semiconductor memories

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59136110A JPS6116099A (ja) 1984-06-29 1984-06-29 ダイナミック型半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6116099A true JPS6116099A (ja) 1986-01-24
JPH0414436B2 JPH0414436B2 (enExample) 1992-03-12

Family

ID=15167523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59136110A Granted JPS6116099A (ja) 1984-06-29 1984-06-29 ダイナミック型半導体記憶装置

Country Status (2)

Country Link
US (1) US5329479A (enExample)
JP (1) JPS6116099A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63275096A (ja) * 1987-05-06 1988-11-11 Mitsubishi Electric Corp 半導体記憶装置
JPH02168492A (ja) * 1988-12-21 1990-06-28 Nec Corp ダイナミックｒａｍのメモリセル
JPH0316094A (ja) * 1988-12-29 1991-01-24 Sharp Corp ダイナミック型半導体記憶装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6198151B1 (en) 1997-10-24 2001-03-06 Nippon Steel Semiconductor Corp. Semiconductor device, semiconductor integrated circuit device, and method of manufacturing same
JPH11232868A (ja) * 1998-02-10 1999-08-27 Nippon Foundry Inc 半導体記憶集積回路
DE19837407A1 (de) * 1998-08-18 1999-10-21 Siemens Ag Dynamischer Speicher
JPWO2003052829A1 (ja) * 2001-12-14 2005-04-28 株式会社日立製作所 半導体装置及びその製造方法
US6888187B2 (en) * 2002-08-26 2005-05-03 International Business Machines Corporation DRAM cell with enhanced SER immunity
US7164595B1 (en) * 2005-08-25 2007-01-16 Micron Technology, Inc. Device and method for using dynamic cell plate sensing in a DRAM memory cell
US7375999B2 (en) * 2005-09-29 2008-05-20 Infineon Technologies Ag Low equalized sense-amp for twin cell DRAMs

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52154314A (en) * 1976-06-17 1977-12-22 Ibm Twooelement memory cell
JPS60164989A (ja) * 1984-02-08 1985-08-28 Toshiba Corp ダイナミツク型ランダムアクセスメモリ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5512576A (en) * 1978-07-12 1980-01-29 Nec Corp Integrated memory cell
JPS60239993A (ja) * 1984-05-12 1985-11-28 Sharp Corp ダイナミツク型半導体記憶装置
US4715015A (en) * 1984-06-01 1987-12-22 Sharp Kabushiki Kaisha Dynamic semiconductor memory with improved sense signal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52154314A (en) * 1976-06-17 1977-12-22 Ibm Twooelement memory cell
JPS60164989A (ja) * 1984-02-08 1985-08-28 Toshiba Corp ダイナミツク型ランダムアクセスメモリ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63275096A (ja) * 1987-05-06 1988-11-11 Mitsubishi Electric Corp 半導体記憶装置
JPH02168492A (ja) * 1988-12-21 1990-06-28 Nec Corp ダイナミックｒａｍのメモリセル
JPH0316094A (ja) * 1988-12-29 1991-01-24 Sharp Corp ダイナミック型半導体記憶装置

Also Published As

Publication number Publication date
JPH0414436B2 (enExample) 1992-03-12
US5329479A (en) 1994-07-12

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees