JPS61160930A - 基板の表面処理液供給方法 - Google Patents

基板の表面処理液供給方法

Info

Publication number
JPS61160930A
JPS61160930A JP81585A JP81585A JPS61160930A JP S61160930 A JPS61160930 A JP S61160930A JP 81585 A JP81585 A JP 81585A JP 81585 A JP81585 A JP 81585A JP S61160930 A JPS61160930 A JP S61160930A
Authority
JP
Japan
Prior art keywords
substrate
nozzle
horizontal
treatment liquid
surface treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP81585A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0237690B2 (enExample
Inventor
Mitsuhiro Fujita
藤田　充宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP81585A priority Critical patent/JPS61160930A/ja
Publication of JPS61160930A publication Critical patent/JPS61160930A/ja
Publication of JPH0237690B2 publication Critical patent/JPH0237690B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Weting (AREA)
JP81585A 1985-01-09 1985-01-09 基板の表面処理液供給方法 Granted JPS61160930A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP81585A JPS61160930A (ja) 1985-01-09 1985-01-09 基板の表面処理液供給方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP81585A JPS61160930A (ja) 1985-01-09 1985-01-09 基板の表面処理液供給方法

Publications (2)

Publication Number Publication Date
JPS61160930A true JPS61160930A (ja) 1986-07-21
JPH0237690B2 JPH0237690B2 (enExample) 1990-08-27

Family

ID=11484168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP81585A Granted JPS61160930A (ja) 1985-01-09 1985-01-09 基板の表面処理液供給方法

Country Status (1)

Country Link
JP (1) JPS61160930A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61140355U (enExample) * 1985-02-20 1986-08-30
JPH01170023A (ja) * 1987-12-25 1989-07-05 Casio Comput Co Ltd フォトレジスト現像装置
US5020200A (en) * 1989-08-31 1991-06-04 Dainippon Screen Mfg. Co., Ltd. Apparatus for treating a wafer surface
KR100873152B1 (ko) * 2007-08-03 2008-12-10 세메스 주식회사 기판 세정 장치
WO2017090505A1 (ja) * 2015-11-24 2017-06-01 東京エレクトロン株式会社 基板液処理装置、基板液処理方法および記憶媒体

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5575223A (en) * 1978-12-04 1980-06-06 Fujitsu Ltd Manufacturing semiconductor device
JPS59126633A (ja) * 1983-01-10 1984-07-21 Mitsubishi Electric Corp 半導体ウエ−ハの処理装置
JPS59232417A (ja) * 1983-06-16 1984-12-27 Toshiba Corp 半導体ウエ−ハのレジスト現像装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5575223A (en) * 1978-12-04 1980-06-06 Fujitsu Ltd Manufacturing semiconductor device
JPS59126633A (ja) * 1983-01-10 1984-07-21 Mitsubishi Electric Corp 半導体ウエ−ハの処理装置
JPS59232417A (ja) * 1983-06-16 1984-12-27 Toshiba Corp 半導体ウエ−ハのレジスト現像装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61140355U (enExample) * 1985-02-20 1986-08-30
JPH01170023A (ja) * 1987-12-25 1989-07-05 Casio Comput Co Ltd フォトレジスト現像装置
US5020200A (en) * 1989-08-31 1991-06-04 Dainippon Screen Mfg. Co., Ltd. Apparatus for treating a wafer surface
KR100873152B1 (ko) * 2007-08-03 2008-12-10 세메스 주식회사 기판 세정 장치
WO2017090505A1 (ja) * 2015-11-24 2017-06-01 東京エレクトロン株式会社 基板液処理装置、基板液処理方法および記憶媒体
CN108292599A (zh) * 2015-11-24 2018-07-17 东京毅力科创株式会社 基板液处理装置、基板液处理方法和存储介质
JPWO2017090505A1 (ja) * 2015-11-24 2018-08-16 東京エレクトロン株式会社 基板液処理装置、基板液処理方法および記憶媒体
US10770316B2 (en) 2015-11-24 2020-09-08 Tokyo Electron Limited Substrate liquid processing apparatus, substrate liquid processing method and recording medium
US20200365424A1 (en) * 2015-11-24 2020-11-19 Tokyo Electron Limited Substrate liquid processing apparatus, substrate liquid processing method and recording medium
CN108292599B (zh) * 2015-11-24 2022-06-10 东京毅力科创株式会社 基板液处理装置、基板液处理方法和存储介质
US11862486B2 (en) 2015-11-24 2024-01-02 Tokyo Electron Limited Substrate liquid processing apparatus, substrate liquid processing method and recording medium

Also Published As

Publication number Publication date
JPH0237690B2 (enExample) 1990-08-27

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