JPS61158891A - 結晶成長方法 - Google Patents
結晶成長方法Info
- Publication number
- JPS61158891A JPS61158891A JP60253009A JP25300985A JPS61158891A JP S61158891 A JPS61158891 A JP S61158891A JP 60253009 A JP60253009 A JP 60253009A JP 25300985 A JP25300985 A JP 25300985A JP S61158891 A JPS61158891 A JP S61158891A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- oxygen
- carbon
- silicon
- pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 94
- 238000000034 method Methods 0.000 title claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 72
- 229910052799 carbon Inorganic materials 0.000 claims description 61
- 229910052760 oxygen Inorganic materials 0.000 claims description 50
- 239000001301 oxygen Substances 0.000 claims description 50
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 47
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 28
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 28
- 238000002844 melting Methods 0.000 claims description 15
- 230000008018 melting Effects 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 238000002109 crystal growth method Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 48
- 239000010703 silicon Substances 0.000 description 48
- 238000006243 chemical reaction Methods 0.000 description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 238000010586 diagram Methods 0.000 description 13
- 229910002804 graphite Inorganic materials 0.000 description 11
- 239000010439 graphite Substances 0.000 description 11
- 239000000155 melt Substances 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000005247 gettering Methods 0.000 description 6
- 238000012544 monitoring process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- 229910002090 carbon oxide Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000010309 melting process Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000012806 monitoring device Methods 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- OANVFVBYPNXRLD-UHFFFAOYSA-M propyromazine bromide Chemical compound [Br-].C12=CC=CC=C2SC2=CC=CC=C2N1C(=O)C(C)[N+]1(C)CCCC1 OANVFVBYPNXRLD-UHFFFAOYSA-M 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 208000019698 Cutaneous collagenous vasculopathy Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 201000009911 cataract 8 multiple types Diseases 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005511 kinetic theory Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011490 mineral wool Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/041—Doping control in crystal growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR84430048.3 | 1984-12-28 | ||
| EP84430048A EP0191111B1 (en) | 1984-12-28 | 1984-12-28 | Improvements to pulling processes and equipment for growing silicon crystals having high and controlled carbon content |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61158891A true JPS61158891A (ja) | 1986-07-18 |
| JPH034515B2 JPH034515B2 (https=) | 1991-01-23 |
Family
ID=8192959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60253009A Granted JPS61158891A (ja) | 1984-12-28 | 1985-11-13 | 結晶成長方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4705591A (https=) |
| EP (1) | EP0191111B1 (https=) |
| JP (1) | JPS61158891A (https=) |
| DE (1) | DE3485093D1 (https=) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6323895A (ja) * | 1986-07-14 | 1988-02-01 | フアルミタリア・カルロ・エルバ・エツセ・ピ−・ア− | 新規な６−もしくは７−メチレンアンドロスタ−１，４−ジエン−３，１７−ジオン誘導体およびその製造方法 |
| WO2017017917A1 (ja) * | 2015-07-29 | 2017-02-02 | 信越半導体株式会社 | シリコン単結晶の育成方法 |
| JP2017114709A (ja) * | 2015-12-22 | 2017-06-29 | 信越半導体株式会社 | 単結晶製造装置及び単結晶の製造方法 |
| JP2018008872A (ja) * | 2016-06-30 | 2018-01-18 | インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ | Ｃｚシリコンウエハを製造する方法及び半導体装置を製造する方法 |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8805478D0 (en) * | 1988-03-08 | 1988-04-07 | Secr Defence | Method & apparatus for growing semi-conductor crystalline materials |
| US5445679A (en) * | 1992-12-23 | 1995-08-29 | Memc Electronic Materials, Inc. | Cleaning of polycrystalline silicon for charging into a Czochralski growing process |
| JP2807609B2 (ja) * | 1993-01-28 | 1998-10-08 | 三菱マテリアルシリコン株式会社 | 単結晶の引上装置 |
| JP3341378B2 (ja) * | 1993-08-25 | 2002-11-05 | 富士通株式会社 | シリコン結晶中の水素濃度測定方法及びシリコン結晶の製造方法 |
| US5753567A (en) * | 1995-08-28 | 1998-05-19 | Memc Electronic Materials, Inc. | Cleaning of metallic contaminants from the surface of polycrystalline silicon with a halogen gas or plasma |
| JP2839018B2 (ja) * | 1996-07-31 | 1998-12-16 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5795381A (en) * | 1996-09-09 | 1998-08-18 | Memc Electrical Materials, Inc. | SIO probe for real-time monitoring and control of oxygen during czochralski growth of single crystal silicon |
| US6491752B1 (en) * | 1999-07-16 | 2002-12-10 | Sumco Oregon Corporation | Enhanced n-type silicon material for epitaxial wafer substrate and method of making same |
| US6344083B1 (en) | 2000-02-14 | 2002-02-05 | Memc Electronic Materials, Inc. | Process for producing a silicon melt |
| US6749683B2 (en) | 2000-02-14 | 2004-06-15 | Memc Electronic Materials, Inc. | Process for producing a silicon melt |
| UA49103C2 (uk) * | 2000-08-21 | 2002-09-16 | Закрите Акціонерне Товариство "Піллар" | Спосіб виділення частини зливка вирощеного монокристала кремнію з заданою концентрацією домішки вуглецю |
| CN1486374A (zh) * | 2000-12-22 | 2004-03-31 | Memc | 监测用于半导体生长的拉晶机中气态环境的方法 |
| US20090120353A1 (en) * | 2007-11-13 | 2009-05-14 | Memc Electronic Materials, Inc. | Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt |
| CN115074829B (zh) * | 2022-07-13 | 2024-01-26 | 西安奕斯伟材料科技股份有限公司 | 拉晶炉 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5627244U (https=) * | 1979-08-07 | 1981-03-13 | ||
| JPS59121193A (ja) * | 1982-12-27 | 1984-07-13 | Fujitsu Ltd | シリコン結晶 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4415401A (en) * | 1980-03-10 | 1983-11-15 | Mobil Solar Energy Corporation | Control of atmosphere surrounding crystal growth zone |
| US4443411A (en) * | 1980-12-15 | 1984-04-17 | Mobil Solar Energy Corporation | Apparatus for controlling the atmosphere surrounding a crystal growth zone |
| US4400232A (en) * | 1981-11-09 | 1983-08-23 | Eagle-Picher Industries, Inc. | Control of oxygen- and carbon-related crystal defects in silicon processing |
| JPS5918191A (ja) * | 1982-07-16 | 1984-01-30 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法 |
| US4591409A (en) * | 1984-05-03 | 1986-05-27 | Texas Instruments Incorporated | Control of nitrogen and/or oxygen in silicon via nitride oxide pressure during crystal growth |
-
1984
- 1984-12-28 EP EP84430048A patent/EP0191111B1/en not_active Expired - Lifetime
- 1984-12-28 DE DE8484430048T patent/DE3485093D1/de not_active Expired - Lifetime
-
1985
- 1985-11-13 JP JP60253009A patent/JPS61158891A/ja active Granted
- 1985-12-06 US US06/806,150 patent/US4705591A/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5627244U (https=) * | 1979-08-07 | 1981-03-13 | ||
| JPS59121193A (ja) * | 1982-12-27 | 1984-07-13 | Fujitsu Ltd | シリコン結晶 |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6323895A (ja) * | 1986-07-14 | 1988-02-01 | フアルミタリア・カルロ・エルバ・エツセ・ピ−・ア− | 新規な６−もしくは７−メチレンアンドロスタ−１，４−ジエン−３，１７−ジオン誘導体およびその製造方法 |
| WO2017017917A1 (ja) * | 2015-07-29 | 2017-02-02 | 信越半導体株式会社 | シリコン単結晶の育成方法 |
| JP2017030992A (ja) * | 2015-07-29 | 2017-02-09 | 信越半導体株式会社 | シリコン単結晶の育成方法 |
| JP2017114709A (ja) * | 2015-12-22 | 2017-06-29 | 信越半導体株式会社 | 単結晶製造装置及び単結晶の製造方法 |
| JP2018008872A (ja) * | 2016-06-30 | 2018-01-18 | インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ | Ｃｚシリコンウエハを製造する方法及び半導体装置を製造する方法 |
| US10273597B2 (en) | 2016-06-30 | 2019-04-30 | Infineon Technologies Ag | Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device |
| US10724149B2 (en) | 2016-06-30 | 2020-07-28 | Infineon Technologies Ag | Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device |
| US10837120B2 (en) | 2016-06-30 | 2020-11-17 | Infineon Technologies Ag | Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH034515B2 (https=) | 1991-01-23 |
| DE3485093D1 (de) | 1991-10-24 |
| EP0191111B1 (en) | 1991-09-18 |
| EP0191111A1 (en) | 1986-08-20 |
| US4705591A (en) | 1987-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS61158891A (ja) | 結晶成長方法 | |
| US4956153A (en) | Apparatus for Czochralski single crystal growing | |
| CA1067800A (en) | Control of oxygen in silicon crystals | |
| EP0229322A2 (en) | Method and apparatus for Czochralski single crystal growing | |
| KR101217679B1 (ko) | 실리콘 단결정의 제조 방법 | |
| US5041186A (en) | Method for manufacturing compound semiconductor single crystals using a hydrogen monitor gas | |
| JP2686223B2 (ja) | 単結晶製造装置 | |
| JP4905138B2 (ja) | 酸化アルミニウム単結晶の製造方法 | |
| JP2002145697A (ja) | 単結晶シリコンウェーハ、インゴット及びその製造方法 | |
| US20060191468A1 (en) | Process for producing single crystal | |
| CN113846378A (zh) | 用于制造氮掺杂的单晶硅的方法 | |
| GB2120954A (en) | Reducing impurity levels in pulled single crystals | |
| TW201923168A (zh) | 砷化鎵系化合物半導體結晶及晶圓群 | |
| JP4904862B2 (ja) | 酸化アルミニウム単結晶の製造方法及び得られる酸化アルミニウム単結晶 | |
| JP3900816B2 (ja) | シリコンウェーハの製造方法 | |
| JPH03184345A (ja) | シリコンウェハおよびその製造方法 | |
| JP5061728B2 (ja) | シリコン単結晶の育成方法 | |
| JP2002293691A (ja) | シリコン単結晶の製造方法及びシリコン単結晶並びにシリコンウエーハ | |
| JP2735740B2 (ja) | シリコン単結晶の製造方法 | |
| CN103890241B (zh) | 单晶的制造方法 | |
| JP4100812B2 (ja) | ＧａＡｓ単結晶，及びその製造方法 | |
| JP2008222483A (ja) | シリコン単結晶の製造方法 | |
| JPS6117489A (ja) | シリコン単結晶の製造方法 | |
| JP2735741B2 (ja) | シリコン単結晶の製造方法 | |
| JPH04275994A (ja) | 半導体単結晶の製造方法 |