JPS61150198A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
JPS61150198A
JPS61150198A JP59278408A JP27840884A JPS61150198A JP S61150198 A JPS61150198 A JP S61150198A JP 59278408 A JP59278408 A JP 59278408A JP 27840884 A JP27840884 A JP 27840884A JP S61150198 A JPS61150198 A JP S61150198A
Authority
JP
Japan
Prior art keywords
row
lines
circuit
decoder
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59278408A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0346914B2 (enrdf_load_stackoverflow
Inventor
Masamichi Asano
正通 浅野
Hiroshi Iwahashi
岩橋　弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59278408A priority Critical patent/JPS61150198A/ja
Priority to DE8585116542T priority patent/DE3583669D1/de
Priority to EP85116542A priority patent/EP0187375B1/en
Priority to US06/813,237 priority patent/US4805150A/en
Publication of JPS61150198A publication Critical patent/JPS61150198A/ja
Publication of JPH0346914B2 publication Critical patent/JPH0346914B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP59278408A 1984-12-25 1984-12-25 不揮発性半導体記憶装置 Granted JPS61150198A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59278408A JPS61150198A (ja) 1984-12-25 1984-12-25 不揮発性半導体記憶装置
DE8585116542T DE3583669D1 (de) 1984-12-25 1985-12-24 Nichtfluechtige halbleiterspeicheranordnung.
EP85116542A EP0187375B1 (en) 1984-12-25 1985-12-24 Nonvolatile semiconductor memory device
US06/813,237 US4805150A (en) 1984-12-25 1985-12-24 Programmable semiconductor memory device having grouped high voltage supply circuits for writing data

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59278408A JPS61150198A (ja) 1984-12-25 1984-12-25 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS61150198A true JPS61150198A (ja) 1986-07-08
JPH0346914B2 JPH0346914B2 (enrdf_load_stackoverflow) 1991-07-17

Family

ID=17596927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59278408A Granted JPS61150198A (ja) 1984-12-25 1984-12-25 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS61150198A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6419593A (en) * 1987-07-14 1989-01-23 Toshiba Corp Programmable rom
JPS6478493A (en) * 1987-09-19 1989-03-23 Fujitsu Ltd Nonvolatile memory device
JP2002056688A (ja) * 2000-08-07 2002-02-22 Samsung Electronics Co Ltd 半導体メモリ装置
JP2002093182A (ja) * 2000-07-13 2002-03-29 Samsung Electronics Co Ltd 小占有面積の行デコーディング回路を有するフラッシュメモリ装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987697A (ja) * 1982-11-10 1984-05-21 Toshiba Corp 不揮発性半導体記憶装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987697A (ja) * 1982-11-10 1984-05-21 Toshiba Corp 不揮発性半導体記憶装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6419593A (en) * 1987-07-14 1989-01-23 Toshiba Corp Programmable rom
JPS6478493A (en) * 1987-09-19 1989-03-23 Fujitsu Ltd Nonvolatile memory device
JP2002093182A (ja) * 2000-07-13 2002-03-29 Samsung Electronics Co Ltd 小占有面積の行デコーディング回路を有するフラッシュメモリ装置
JP2002056688A (ja) * 2000-08-07 2002-02-22 Samsung Electronics Co Ltd 半導体メモリ装置

Also Published As

Publication number Publication date
JPH0346914B2 (enrdf_load_stackoverflow) 1991-07-17

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