JPS61148862A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS61148862A JPS61148862A JP59269661A JP26966184A JPS61148862A JP S61148862 A JPS61148862 A JP S61148862A JP 59269661 A JP59269661 A JP 59269661A JP 26966184 A JP26966184 A JP 26966184A JP S61148862 A JPS61148862 A JP S61148862A
- Authority
- JP
- Japan
- Prior art keywords
- region
- substrate
- source
- semiconductor
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
Landscapes
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59269661A JPS61148862A (ja) | 1984-12-22 | 1984-12-22 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59269661A JPS61148862A (ja) | 1984-12-22 | 1984-12-22 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61148862A true JPS61148862A (ja) | 1986-07-07 |
| JPH0127590B2 JPH0127590B2 (enExample) | 1989-05-30 |
Family
ID=17475451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59269661A Granted JPS61148862A (ja) | 1984-12-22 | 1984-12-22 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61148862A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08115985A (ja) * | 1994-10-17 | 1996-05-07 | Nec Corp | 低雑音の半導体集積回路 |
| JP2006523962A (ja) * | 2003-04-16 | 2006-10-19 | レイセオン・カンパニー | 修正されたcmosプロセスにより製造された放射線硬化トランジスタ |
-
1984
- 1984-12-22 JP JP59269661A patent/JPS61148862A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08115985A (ja) * | 1994-10-17 | 1996-05-07 | Nec Corp | 低雑音の半導体集積回路 |
| JP2006523962A (ja) * | 2003-04-16 | 2006-10-19 | レイセオン・カンパニー | 修正されたcmosプロセスにより製造された放射線硬化トランジスタ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0127590B2 (enExample) | 1989-05-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |