JPS61145818A - Heat processing method for semiconductor thin film - Google Patents
Heat processing method for semiconductor thin filmInfo
- Publication number
- JPS61145818A JPS61145818A JP59268809A JP26880984A JPS61145818A JP S61145818 A JPS61145818 A JP S61145818A JP 59268809 A JP59268809 A JP 59268809A JP 26880984 A JP26880984 A JP 26880984A JP S61145818 A JPS61145818 A JP S61145818A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- laser light
- film
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はレーザ光による半導体薄膜の熱処理方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of heat treating a semiconductor thin film using laser light.
従来、非晶質半導体の結晶化、或はイオン注入された不
純物の活性化等のために、半導体薄膜の熱処理が行なわ
れていた。Conventionally, semiconductor thin films have been heat-treated to crystallize amorphous semiconductors or activate ion-implanted impurities.
電気炉による熱処理の場合、例えばアモルファスシリコ
ン薄膜の結晶化のためには、少くとも ６００℃を越え
る高温に長時間保持されることが必要であった。また、
イオン注入法によってアモルファスシリコンに注入され
九不純物の活性化のためＫも、同程度の高温処理が必要
であつ九。In the case of heat treatment using an electric furnace, for example, in order to crystallize an amorphous silicon thin film, it is necessary to maintain the temperature at a high temperature exceeding at least 600° C. for a long time. Also,
K, which is implanted into amorphous silicon by ion implantation, requires a similar high-temperature treatment to activate impurities.
そして、このアモルファスシリコン薄膜は、シラン（８
１Ｈ４）を反応ガスとして熱分解（ＣＶＤ）法、プラズ
マ分解法または光分解法によって形成されるが、分解析
出されたアモルファスシリコンには、なおも一部の水素
が結合し九ものが含まれる。このシリコンと結合した水
素は、熱処理過程において。This amorphous silicon thin film is made of silane (8
It is formed by thermal decomposition (CVD) method, plasma decomposition method, or photodecomposition method using 1H4) as a reaction gas, but the amorphous silicon that is separated and separated still contains some hydrogen bonded to it. . This hydrogen combined with silicon is removed during the heat treatment process.
シリコン薄膜中の欠陥を減少させ、半導体としての電気
的特性を向上させる有用物質である。以下、結合水素を
含むアモルファスシリコンをａ−８１：Ｈと略記する。It is a useful substance that reduces defects in silicon thin films and improves their electrical properties as a semiconductor. Hereinafter, amorphous silicon containing bonded hydrogen will be abbreviated as a-81:H.
ところが、上述のような高温度の熱処理がなされるため
、ａ−８１：Ｈ薄膜が被着形成される基板には石英ガラ
スのような耐熱性材料を用いなければならず、価格が上
昇するという問題があった。However, since the above-mentioned high-temperature heat treatment is performed, a heat-resistant material such as quartz glass must be used for the substrate on which the a-81:H thin film is deposited, which increases the price. There was a problem.
また、ａ−８１：Ｈ薄膜から結合水素が放出されてしま
い、半導体としての電気的特性が劣化するという問題が
あった。Further, there is a problem in that bonded hydrogen is released from the a-81:H thin film, resulting in deterioration of the electrical characteristics as a semiconductor.
かかる点に鑑み１本発明の目的は、全般的に比較的低温
処理を可能にして従来の欠点を除去した半導体薄膜の熱
処理方法を提供するところにある・φ−１（３）を短時
間照射して、半導体薄膜（２）の所定領域を所定の高温
に加熱した後、半導体薄膜（２）を比較的長時間に亘っ
て、比較的低温度で加熱するようにした半導体薄膜の熱
処理方法である。In view of the above points, an object of the present invention is to provide a method for heat treatment of semiconductor thin films which enables relatively low temperature treatment in general and eliminates the drawbacks of the conventional methods. A heat treatment method for a semiconductor thin film, in which a predetermined region of the semiconductor thin film (2) is heated to a predetermined high temperature, and then the semiconductor thin film (2) is heated at a relatively low temperature for a relatively long period of time. be.
かかる本発明によれば、レーザ光の短時間照射のため、
半導体薄膜の所定領域のみが所要の高温度となり、比較
的長時間低温度の加熱によって、半導体薄膜の特性が向
上する。According to the present invention, for short-time irradiation with laser light,
Only a predetermined region of the semiconductor thin film is brought to the required high temperature, and the properties of the semiconductor thin film are improved by heating at a low temperature for a relatively long period of time.
（実施例〕
以下、ｉｉ図〜第３図を参照しながら、本発明による半
導体薄膜の熱処理方法の一実施例について説明する。(Example) Hereinafter, an example of the method for heat treatment of a semiconductor thin film according to the present invention will be described with reference to FIGS. ii to 3.
第１図Ｋ、本発明方法の一実施例が適用される半導体装
置の構成を示す。FIG. 1K shows the structure of a semiconductor device to which an embodiment of the method of the present invention is applied.
第１図において、（１）は基板であって、例えばンーダ
ガラスから成る。（２）は半導体薄膜であって、本実施
例では前述のａ−８１：Ｈから成り、基板（１）上に被
着形成される。その厚さｔは例えば２００ｎｍである。In FIG. 1, reference numeral (1) denotes a substrate, which is made of, for example, powdered glass. (2) is a semiconductor thin film, which in this embodiment is made of the aforementioned a-81:H, and is deposited on the substrate (1). The thickness t is, for example, 200 nm.
（３）は波長が２４５ｎｍのＫｒＦエキシマレーザ光で
あって、半導体薄膜（２）に間欠的に照射される。(3) is a KrF excimer laser beam having a wavelength of 245 nm, which is intermittently irradiated onto the semiconductor thin film (2).
本実施例においては、先ず、レーザ光（３）の短時間照
射によって、ａ−８１：Ｈ膜（２）のみが局部的に所定
の結晶化温度まで加熱される。次いで、ａ−８１： Ｈ
膜（２）中のレーザ光（３）Ｋ誘起され九欠陥や熱歪に
よる欠陥を除去するため、電気炉によって、半導体装置
全体が比較的低温度で長時間加熱される。In this example, first, only the a-81:H film (2) is locally heated to a predetermined crystallization temperature by short-time irradiation with laser light (3). Then a-81: H
In order to remove defects induced by laser light (3) and thermal strain in the film (2), the entire semiconductor device is heated in an electric furnace at a relatively low temperature for a long time.
波長が４００ｎｍ以下の紫外線に対して、アモルファス
シリコンの吸収係数αは１０’ｍ−’以上と極めて大き
いので、レーザ光（３）はａ−８１：Ｈ膜（２）の表面
からの深さｄｔ＝１／αが１０ｎｍと極めて浅い範囲で
吸収されて熱エネルギーに変換される。For ultraviolet light with a wavelength of 400 nm or less, the absorption coefficient α of amorphous silicon is extremely large at 10'm-' or more, so the laser beam (3) is transmitted at a depth dt from the surface of the a-81:H film (2). =1/α is absorbed in an extremely shallow range of 10 nm and converted into thermal energy.
また、レーザ光（３）の１回の照射時間（パルス幅）を
τｓｅｃ 、 ａ−８１：Ｈ膜（２）の熱拡散係数をＤ
ｃＩＲ”／’ｓｅｅとすると、このτ、。。間にａ−８
ｌ ＳＨ膜（２）の表面から熱が拡散する距離ｄｈは次
の（１）式で表わされる。In addition, the irradiation time (pulse width) of one laser beam (3) is τsec, and the thermal diffusion coefficient of the a-81:H film (2) is D
cIR"/'see, this τ..., between a-8
The distance dh through which heat diffuses from the surface of the lSH film (2) is expressed by the following equation (1).
ｄｈ＝２ｙ″ＴＦ ・・・・・・（１）こ
の拡散距離ｄｈがａ−８１：Ｈ膜（２）の厚さｔを越え
ない場合、ａ−８１：Ｈ膜（２）の表面に発生した熱は
レーザ光（３）の照射時間中に基板（１）ｔで到達せず
、ａ−８ｌ：Ｈ膜（２）のレーザ光照射領域のみが局部
的に所定の高温になる。dh=2y″TF ・・・・・・(1) If this diffusion distance dh does not exceed the thickness t of the a-81:H film (2), it will occur on the surface of the a-81:H film (2). The generated heat does not reach the substrate (1) t during the irradiation time of the laser beam (3), and only the laser beam irradiated area of the a-8l:H film (2) becomes locally at a predetermined high temperature.
所定の温度上昇分子、を得るために必要なレーず光のパ
ルス当シのエネルギー密度１．（υｉ）は次の（２）式
のように表わされる。Energy density per pulse of laser light necessary to obtain a predetermined temperature increase in the molecule.1. (υi) is expressed as the following equation (2).
Ｅ、 ＝ （１−Ｒ） Ｔ、・ｃ、す・２ｆ「 ・・・
・・・（２）ここく、Ｒは表面の反射率、ＣＰは比熱、
ρは密度である。E, = (1-R) T,・c,su・2f "...
...(2) Here, R is the reflectance of the surface, CP is the specific heat,
ρ is the density.
ａ−８１：Ｈの反射率Ｒは略７０チと大きく、また、熱
拡散係数りは略０．０１ ｃｙｓ”／ ｓ＠ａと推定さ
れる。結晶化に必要なエネルギー密度は２０ ｒｎＪ／
ｃｍ”以上あれば良く、本実施例においては、パルス幅
が１４ｎｓ＠ａで１００ ｍＪ／ＣＩＩＭ麿のＫｒＦエ
キシマレーザ光が用いられ、ａ−８１：Ｈ膜（２）は約
１０００℃まで加熱されて、結晶化がなされる。この場
合、レーザ光の照射時間が極めて短か（、ａ−８ｌ：Ｈ
膜（２）が高温になる時間もまた極めて短かい丸め、そ
の中の結合水素はすべて放出されるに至らず、一部はシ
リコンと結合したままの状態で残留する。The reflectance R of a-81:H is as large as approximately 70 cm, and the thermal diffusion coefficient is estimated to be approximately 0.01 cys"/s@a. The energy density required for crystallization is 20 rnJ/
In this example, KrF excimer laser light with a pulse width of 14 ns@a and 100 mJ/CIIM was used, and the a-81:H film (2) was heated to about 1000°C. In this case, the laser beam irradiation time is extremely short (, a-8l:H
The time during which the film (2) is heated to a high temperature is also extremely short, and all of the bonded hydrogen therein is not released, and some of it remains bonded to silicon.
第２図はレーザ光照射前後における８１：Ｈ膜の赤外線
吸収スペクトルであって、同図中、Ａは照射前、Ｂは照
射後を示す。この第２図からレーザ光の照射後において
も、シリコン膜中に結合水素が存在し【いることが判る
。なお、従来の高温炉結晶化処理によるものでは、この
赤外線吸収は認められない。FIG. 2 shows the infrared absorption spectra of the 81:H film before and after laser beam irradiation, in which A shows before irradiation and B shows after irradiation. It can be seen from FIG. 2 that bonded hydrogen exists in the silicon film even after laser beam irradiation. Note that this infrared absorption is not observed in conventional high-temperature furnace crystallization treatment.
上述のような結晶化処理の後、光誘起欠陥や熱歪による
欠陥を除去するため、電気炉において、圧力が１ ｔｏ
ｒｒの窒素ガス中で３００℃１時間の比較的低温度長時
間の熱処理がなされる。このとき、結合水素がシリコン
結晶中の欠陥を減少させるので、半導体としての電気的
特性が向上する。この模様を第３図に示す。After the crystallization process as described above, in order to remove photo-induced defects and defects due to thermal strain, the pressure was increased to 1 to
A heat treatment is performed at a relatively low temperature for 1 hour at 300° C. in nitrogen gas at a temperature of 30° C. for a long time. At this time, since the bonded hydrogen reduces defects in the silicon crystal, the electrical characteristics as a semiconductor are improved. This pattern is shown in Figure 3.
第３図において、白丸及び黒丸はシリ；ン膜の光導電率
及び暗導電率を示す。また、横軸の！。In FIG. 3, white circles and black circles indicate the photoconductivity and dark conductivity of the silicon film. Also, on the horizontal axis! .
■及び■はそれぞれレーザ光照射前、照射後及び低温炉
処理後の状態を示す。■ and ■ indicate the states before laser beam irradiation, after irradiation, and after low temperature furnace treatment, respectively.
同図から明らかなように、暗導電率はレーザ照射後大幅
に増大して多結晶薄膜の特性を示し、低温炉処理後、更
に増大する。一方、光導電率はレーザ照射後に減少する
が、低温炉処理によってレーザ照射前よシも増大し、良
好な多結晶膜特性を示す。As is clear from the figure, the dark conductivity increases significantly after laser irradiation, exhibiting the characteristics of a polycrystalline thin film, and further increases after low temperature furnace treatment. On the other hand, although the photoconductivity decreases after laser irradiation, the low temperature furnace treatment increases it even more than before laser irradiation, indicating good polycrystalline film properties.
次に、第４図を参照しながら、本発明方法をイオン注入
法による不純物の活性化に適用した他の実施例について
説明する。Next, with reference to FIG. 4, another embodiment in which the method of the present invention is applied to activation of impurities by ion implantation will be described.
この場合、ａ−ｓｔ：ＨＪＩＩＫはｐ型となる不純物が
例えば５０ Ｋ・Ｖのエネルギーで１０／ｅＩｌ？の密
度でイオン注入される。このイオン注入され九ａ−８１
：Ｈ膜がエネルギー密度８０ ｍＪ ７ｃｍ”のＫｒＦ
エキシマレーザ。に短時間照射された後、前述の実施例
と同様に、１ ｔｏｒｒの窒素ガス中で３００℃１時間
の低温炉処理がなされる。In this case, a-st:HJIIK has a p-type impurity of, for example, 10/eIl? at an energy of 50 K·V. Ions are implanted at a density of This ion implantation is nine a-81
:H film is KrF with energy density 80 mJ 7 cm”
excimer laser. After being irradiated for a short period of time, a low-temperature furnace treatment is performed at 300° C. for 1 hour in nitrogen gas at 1 torr, as in the previous example.
この場合の導電率の変化の模様を第４図に示す。FIG. 4 shows the pattern of change in conductivity in this case.
第４図において、横軸の１．１及び■は、それぞれレー
ザ光照射前、照射後及び低温炉処理後の状態を示し、■
は低温炉処理のみを行なった後の状態を示す。In FIG. 4, 1.1 and ■ on the horizontal axis indicate the states before laser beam irradiation, after irradiation, and after low temperature furnace treatment, respectively;
shows the state after only low-temperature furnace treatment.
同図から明らかなように、レーザ光を照射することなく
、低温炉処理のみを行った場合、活性化は認められない
のに対して、レーザ光照射によって、導電率が１０”／
Ω傭まで活性化されたｐ＋型のａ−８１：Ｈ膜は、低温
炉処理によって、その導電率が更に増大しておシ、イオ
ン注入による不純物が効果的に活性化されていることが
判る。As is clear from the figure, when only low temperature furnace treatment was performed without laser light irradiation, no activation was observed, whereas with laser light irradiation, the electrical conductivity increased by 10”/
It can be seen that the conductivity of the p+ type a-81:H film, which has been activated to Ωm, further increases through low-temperature furnace treatment, and the impurities caused by ion implantation are effectively activated. .
次に、第５図を参照しながら、本発明の更に他の実施例
について説明する。Next, still another embodiment of the present invention will be described with reference to FIG.
第５図において、ガラス基板（１）上に半導体薄膜（２
）として結晶シリコン膜が形成され、ノ４ルスレーザ光
（３）の光源（４）としてＫｒＦエキシマレーザが用い
られる。レーザ光（３）は、レンズ（５）によって所定
の大きさに集束されて、半導体薄膜（２）の表面の局所
（２ａ）を照射して所定温度まで加熱する。In FIG. 5, a semiconductor thin film (2) is placed on a glass substrate (1).
), and a KrF excimer laser is used as the light source (4) of the Norse laser beam (3). The laser beam (3) is focused to a predetermined size by a lens (5), and irradiates a local area (2a) on the surface of the semiconductor thin film (2) to heat it to a predetermined temperature.
（２）は低温処理のためのエネルギービームであって、
そのビーム源α４としてはアルコ９ンレーザ、炭酸がス
レーブま九は赤外線灯等が用いられる。低温処理の場合
、エネルギービーム斡を局部的に照射する必要はなく、
その照射量はシャッタ（ロ）によって制御される。(2) is an energy beam for low temperature processing,
As the beam source α4, an alcohol laser, an infrared lamp, etc. are used as the beam source α4. In the case of low-temperature processing, there is no need to irradiate the energy beam locally;
The amount of irradiation is controlled by a shutter (b).
波長が２４５ｎｍの紫外線に対する結晶シリコンの吸収
係数αは、前出のアモルファスシリコンのそれと同じく
、１０ｃＩＲ以上であるから、レーザ光（３）が結晶シ
リコン膜（２）内へ進入する深さｄｔは前出実施例の場
合と同じく、１０ｎｍとなる。The absorption coefficient α of crystalline silicon for ultraviolet rays with a wavelength of 245 nm is 10 cIR or more, as is the case with the aforementioned amorphous silicon, so the depth dt at which the laser beam (3) enters the crystalline silicon film (2) is As in the case of the previous example, the thickness is 10 nm.
一方、結晶シリコンの熱拡散係数りは、アモルファスシ
リコンのそれに比べて非常に大きく、０．９ ｃｍ”
／ｓ＠ｅであって、レーザ光の照射時間τを１゜ｎ Ｉ
Ｉ＠ｅ とすれば、この７時間内に熱が拡散する距離ｄ
ｈは、前出（１）式から、１．９μｍとなる。従って、
本実施例においては、結晶シリコン膜（２）の厚さが１
．９μｍを越える場合、レーザ光照射時間中に結晶シリ
コン膜（２）のみが局部的に加熱され、基板（１）への
熱拡散はない。On the other hand, the thermal diffusivity of crystalline silicon is much larger than that of amorphous silicon, 0.9 cm.
/s@e, and the laser beam irradiation time τ is 1゜n I
If I@e, then the distance d that heat diffuses within the last 7 hours is
From equation (1) above, h is 1.9 μm. Therefore,
In this example, the thickness of the crystalline silicon film (2) is 1
．． If it exceeds 9 μm, only the crystalline silicon film (2) is locally heated during the laser beam irradiation time, and there is no heat diffusion to the substrate (1).
また、レーザ光（３）の所要エネルギー密度は前出（２
）式から求めることができる。In addition, the required energy density of the laser beam (3) is
) can be obtained from the formula.
シリコン膜（２）の表面を融点の１４１５℃まで加熱す
るためＫは、無反射コーティングによってＲキ０として
、比熱Ｃ，＝ ０．７ 、密度ρ＝２．３３であるから
、Ｅｐ ＝０．４３ Ｊ ／ｅｙｅ”
のエネルギーが必要となる・
光誘起欠陥等の除去のためのエネルギービーム（２）の
照射条件は結晶シリコン膜（２）の到達温度が劣化しな
い範囲の上限の６００℃の場合、照射時間が１μｌ＠七
以上となる。In order to heat the surface of the silicon film (2) to its melting point of 1415°C, K is Rki0 due to the anti-reflection coating, specific heat C, = 0.7, density ρ = 2.33, and Ep = 0. Energy of 43 J/eye” is required. The irradiation conditions for the energy beam (2) for removing photo-induced defects, etc. are 600°C, which is the upper limit of the range in which the temperature reached by the crystalline silicon film (2) does not deteriorate. , the irradiation time is 1 μl@7 or more.
本実施例においても、前述の実施例におけると同様の効
果が得られる。In this embodiment as well, the same effects as in the above-mentioned embodiments can be obtained.
以上、被処理半導体がシリコンである場合について説明
したが、ガリウム砒素（ＧａＡｍ）の場合には、し・−
デ光のノ臂ルス照射によって、ＡＭの放出を抑制するこ
とができる。Above, we have explained the case where the semiconductor to be processed is silicon, but in the case of gallium arsenide (GaAm),...
AM emission can be suppressed by irradiating the arm with delight.
更に、本発明方法によれば、短波長レーザ光のノ臂ルス
照射によって、処理の深さを極めて小さくすることがで
きるため、所謂３次元集積回路の製造に好適である。Further, according to the method of the present invention, the depth of processing can be made extremely small by irradiating the arm with short wavelength laser light, so that it is suitable for manufacturing so-called three-dimensional integrated circuits.
以上詳述のように１本発明によれば、レーザ光の短時間
照射によって、処理領域を局限することができると共に
、被処理半導体中の有用物質の放出を抑制することがで
きる。As described in detail above, according to one aspect of the present invention, by short-time irradiation with laser light, the processing area can be localized, and the release of useful substances in the semiconductor to be processed can be suppressed.
更に、比較的低温長時間の処理を行なうことによって、
レーザ光照射による半導体の欠陥が除去され、良好な特
性の半導体薄膜が得られる。Furthermore, by processing at relatively low temperatures for a long time,
Defects in the semiconductor due to laser beam irradiation are removed, and a semiconductor thin film with good characteristics is obtained.
第１図は本発明による半導体薄膜の熱処理方法の一実施
例を説明するための半導体装置の断面図、第２図及び第
３図は本発明の一実施例の説明に供する線図、第４図は
本発明の他の実施例の説明に供する線図、第５図は本発
明の更に他の実施例を示す構成図である。
（２）は半導体薄膜、（３）はエネルギービーム（レー
ザ光）、斡はエネルギービームである。
第１図
第２図FIG. 1 is a cross-sectional view of a semiconductor device for explaining an embodiment of the heat treatment method for a semiconductor thin film according to the present invention, FIGS. 2 and 3 are diagrams for explaining an embodiment of the present invention, and FIG. The figure is a diagram for explaining another embodiment of the invention, and FIG. 5 is a configuration diagram showing still another embodiment of the invention. (2) is a semiconductor thin film, (3) is an energy beam (laser light), and 斡 is an energy beam. Figure 1 Figure 2
Claims (1)
上記半導体薄膜の所定領域を所定の高温に加熱した後、
上記半導体薄膜を比較的長時間に亘つて比較的低温度で
加熱することを特徴とする半導体薄膜の熱処理方法。By irradiating a laser beam that is absorbed by a semiconductor thin film for a short period of time,
After heating a predetermined region of the semiconductor thin film to a predetermined high temperature,
A method for heat treatment of a semiconductor thin film, which comprises heating the semiconductor thin film at a relatively low temperature for a relatively long period of time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59268809A JPH07118444B2 (en) | 1984-12-20 | 1984-12-20 | Heat treatment method for semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59268809A JPH07118444B2 (en) | 1984-12-20 | 1984-12-20 | Heat treatment method for semiconductor thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61145818A true JPS61145818A (en) | 1986-07-03 |
| JPH07118444B2 JPH07118444B2 (en) | 1995-12-18 |
Family
ID=17463558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59268809A Expired - Lifetime JPH07118444B2 (en) | 1984-12-20 | 1984-12-20 | Heat treatment method for semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07118444B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6325913A (en) * | 1986-07-17 | 1988-02-03 | Nec Corp | Manufacuture of semiconductor thin film |
| JPH06188268A (en) * | 1992-12-16 | 1994-07-08 | Casio Comput Co Ltd | Manufacture of thin film transistor |
| JPH06216044A (en) * | 1993-01-20 | 1994-08-05 | Nec Corp | Manufacture of semiconductor thin film |
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| JPS57138129A (en) * | 1981-02-19 | 1982-08-26 | Matsushita Electric Ind Co Ltd | Manufacture of amorphous thin-film |
| US4370175A (en) * | 1979-12-03 | 1983-01-25 | Bernard B. Katz | Method of annealing implanted semiconductors by lasers |
| JPS5860530A (en) * | 1981-10-06 | 1983-04-11 | Toshiba Corp | Manufacture of semiconductor film |
| JPS5892227A (en) * | 1981-11-28 | 1983-06-01 | Mitsubishi Electric Corp | Gettering for crystal defect |
| JPS5893216A (en) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | Manufacture of semiconductor device |
| JPS58134476A (en) * | 1982-02-05 | 1983-08-10 | Mitsubishi Electric Corp | Thin film transistor |
| JPS58170065A (en) * | 1982-03-31 | 1983-10-06 | Toshiba Corp | Manufacture of thin film field effect transistor |
| JPS58197717A (en) * | 1982-05-13 | 1983-11-17 | Toshiba Corp | Preparation of semiconductor device |
| JPS58206163A (en) * | 1982-05-27 | 1983-12-01 | Toshiba Corp | Manufacture of thin film semiconductor device |
| JPS59181531A (en) * | 1983-03-31 | 1984-10-16 | Oki Electric Ind Co Ltd | Formation of diffusion region |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4370175A (en) * | 1979-12-03 | 1983-01-25 | Bernard B. Katz | Method of annealing implanted semiconductors by lasers |
| JPS57104217A (en) * | 1980-12-22 | 1982-06-29 | Toshiba Corp | Surface heat treatment |
| JPS57138129A (en) * | 1981-02-19 | 1982-08-26 | Matsushita Electric Ind Co Ltd | Manufacture of amorphous thin-film |
| JPS5860530A (en) * | 1981-10-06 | 1983-04-11 | Toshiba Corp | Manufacture of semiconductor film |
| JPS5892227A (en) * | 1981-11-28 | 1983-06-01 | Mitsubishi Electric Corp | Gettering for crystal defect |
| JPS5893216A (en) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | Manufacture of semiconductor device |
| JPS58134476A (en) * | 1982-02-05 | 1983-08-10 | Mitsubishi Electric Corp | Thin film transistor |
| JPS58170065A (en) * | 1982-03-31 | 1983-10-06 | Toshiba Corp | Manufacture of thin film field effect transistor |
| JPS58197717A (en) * | 1982-05-13 | 1983-11-17 | Toshiba Corp | Preparation of semiconductor device |
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| JPS59181531A (en) * | 1983-03-31 | 1984-10-16 | Oki Electric Ind Co Ltd | Formation of diffusion region |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6325913A (en) * | 1986-07-17 | 1988-02-03 | Nec Corp | Manufacuture of semiconductor thin film |
| JPH06188268A (en) * | 1992-12-16 | 1994-07-08 | Casio Comput Co Ltd | Manufacture of thin film transistor |
| JPH06216044A (en) * | 1993-01-20 | 1994-08-05 | Nec Corp | Manufacture of semiconductor thin film |
| JPH0828337B2 (en) * | 1993-01-20 | 1996-03-21 | 日本電気株式会社 | Method for manufacturing semiconductor thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07118444B2 (en) | 1995-12-18 |
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