JPS61144890A - Production of lens of led lamp - Google Patents

Production of lens of led lamp

Info

Publication number
JPS61144890A
JPS61144890A JP59267772A JP26777284A JPS61144890A JP S61144890 A JPS61144890 A JP S61144890A JP 59267772 A JP59267772 A JP 59267772A JP 26777284 A JP26777284 A JP 26777284A JP S61144890 A JPS61144890 A JP S61144890A
Authority
JP
Japan
Prior art keywords
lens
chip
frame
led chip
resin material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59267772A
Other languages
Japanese (ja)
Other versions
JPH0422354B2 (en
Inventor
Tomio Nakaya
中矢　富夫
Hoichiro Kashiwara
柏原　鳳一郎
Osamu Waki
脇　脩
Toshihide Kawamura
河村　俊秀
Hiroo Sakai
酒井　弘生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP59267772A priority Critical patent/JPS61144890A/en
Publication of JPS61144890A publication Critical patent/JPS61144890A/en
Publication of JPH0422354B2 publication Critical patent/JPH0422354B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F13/00—Illuminated signs; Luminous advertising
    • G09F13/20—Illuminated signs; Luminous advertising with luminescent surfaces or parts
    • G09F13/22—Illuminated signs; Luminous advertising with luminescent surfaces or parts electroluminescent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Abstract

PURPOSE:To prevent the optical losses such as absorption or diffusion of the light from an LED chip, etc., by a method wherein a circular frame is arranged on a substrate, with the LED chip bonded on the substrate as the center, and a resin material is dropped from above the LED chip to form a convex lens shaped with surface tention within the frame. CONSTITUTION:A circular and enclosing frame 4 is arranged on a substrate 2, with an LED chip 1, on which wire 3 is bonded, as the center. A resin material 5 is dropped from above the chip 1 to form a convex lens 6 on the chip 1 with the surface tention of the resin material 5 within the frame 4. The chip 1 is buried in the lens 6, with the result that the optical losses of absorption and deffusion of the light from the LED chip 1 because of the non-presence of an air layer between the chip 1 and the lens 6.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、ＬＩＣＩ）ランプのレンズの製造方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a method for manufacturing lenses for LICI lamps.

（従来技術） 従来のＬＥＤランゾにおいては第４図に示すように、基
板ａ上にワイヤーボンディングした１個ま九は複数個の
ＬＥＤチツゾｂが配置されている。そして、別体で内部
を空洞に形成した凸状のレンズＣを、前記ＬＥＤチツ７
″ｂに被せるようにして基板ａに取付けていた。(Prior Art) In a conventional LED lamp, as shown in FIG. 4, one or more LED lamps (b) are arranged on a substrate (a) by wire bonding. Then, a separate convex lens C having a hollow interior is attached to the LED chip 7.
It was attached to board a so as to cover ``b''.

（発明が解決しようとする問題点） 前記従来例におけるＩＪＤランプは、別体で形成シタレ
ンズをＬＥＤチップに被せるようにして基板に取付ける
ため、ＬＥＤチッグとレンズのセンターがズして配置さ
れる懸念があった。また、レンズの内部が空洞に形成さ
れているので、ＬＥＤチップとレンズとの間に空気層に
よる空間が形成され、その空間でＬＥＤチッグからの光
線が吸収や散乱等の光学的損失を生じる要因となってい
た。(Problems to be Solved by the Invention) Since the IJD lamp in the conventional example is attached to the substrate by covering the LED chip with a separately formed lens, there is a concern that the center of the LED chip and the lens may be misaligned. was there. In addition, since the inside of the lens is formed into a cavity, an air layer is formed between the LED chip and the lens, which is a factor that causes optical losses such as absorption and scattering of light rays from the LED chip. It became.

本発明は、このような従来のＬＥＤランプのレンズに起
因する問題点を解決しようとするものである。The present invention aims to solve the problems caused by the lenses of conventional LED lamps.

（問題点を解決するための手段） 前記問題点を解決するための手段として本発明ハ、基板
上にボンディングしたＩＤチップを中心として、その周
囲を囲むようにして円形状の枠を配置し、前記ＬＥＤチ
ップの上部から樹脂材を滴下させ、前記枠の内側に前記
樹脂材の表面張力を利用して凸状のレンズを、前記ＩＤ
チップ上に形成することを要旨とするものである。(Means for Solving the Problems) As a means for solving the above problems, the present invention 3) arranges a circular frame around the ID chip bonded on the substrate so as to surround the ID chip, and the LED A resin material is dropped from the top of the chip, and a convex lens is attached to the inside of the frame using the surface tension of the resin material.
The gist is to form it on a chip.

（作　用） 上記の構成により、ＬＥＤチッグとレンズのセンターが
ズして配置されることがなくなり、かつＩＪＤチップ上
に直接レンズが形成されるので、空気層の空間によって
生じるＬＥＤチップからの光の吸収や散乱等の光学的損
失を防止することができる。(Function) With the above configuration, the centers of the LED chip and the lens will not be misaligned, and the lens will be formed directly on the IJD chip, so light from the LED chip generated by the air space will be removed. Optical losses such as absorption and scattering can be prevented.

（実施例） 以下、本発明を図示の実施例により詳細に説明すると、
ｌは、基板２にボンディングされたＬｌチップであり、
その上面にワイヤー３がボンディングされている。４は
、円形状の枠であり、前記ＬＥＤチツゾ１を中心として
、その周囲を囲むようにして配置されている。(Examples) Hereinafter, the present invention will be explained in detail with reference to illustrated examples.
l is an Ll chip bonded to the substrate 2,
A wire 3 is bonded to its upper surface. Reference numeral 4 denotes a circular frame, which is arranged to surround the LED chip 1 with the LED chip 1 at the center.

そして、第２図に示すように、水平に設置した基板２上
のｌｌＣＤチップ１の上方からシリコンやフロン系等の
樹脂材５を滴下させ、第３図に示すように、前記枠４の
内側に樹脂材５の表面張力を利用して凸状のレンズ６が
ＬＥＤチップｌ上に形成される。Then, as shown in FIG. 2, a resin material 5 such as silicon or fluorocarbon is dropped from above the llCD chip 1 on the horizontally placed substrate 2, and as shown in FIG. Then, a convex lens 6 is formed on the LED chip l using the surface tension of the resin material 5.

本発明に係るＬＥＤランゾのレンズ６は、上記のように
して形成することができ、枠４によって滴下した樹脂Ａ
流出を阻止すると共に枠４の内側に樹脂材５の表面張力
を利用して凸状のレンズ６を形成することができ、更に
滴下させる樹脂材５の量と枠４の大きさによって、レン
ズ６の形状や大きさを任意に調整することができる。The lens 6 of the LED Lanzo according to the present invention can be formed as described above, and the resin A dropped by the frame 4 can be formed as described above.
In addition to preventing outflow, a convex lens 6 can be formed inside the frame 4 by utilizing the surface tension of the resin material 5. Furthermore, depending on the amount of the resin material 5 to be dropped and the size of the frame 4, the lens 6 can be formed. The shape and size of can be adjusted arbitrarily.

また、前記枠４は、前記し／ズ６を形成するシリコンや
フロン系等の樹脂材５と親和性のない材質で形成するこ
とが好ましく、場合によってはレンズ６を形成した後、
枠４を取外してもよい。Further, the frame 4 is preferably formed of a material that has no affinity with the resin material 5 such as silicon or fluorocarbon that forms the lens 6. In some cases, after forming the lens 6,
The frame 4 may be removed.

（発明の効果） 以上説明したよ、うに、本発明に係るＬＥＤランプのレ
ンズの製造方法は、基板上にボンディングしたＬＩＩＣ
Ｄチップを中心として、その周囲を囲むようにして円形
状の枠を配置し、前記ＬＩＤチップの上ガ ＝から樹脂材を滴下させ、前記枠の内側に樹脂材の表面
張力を利用して凸状のレンズを、前記ＬＥＤチップ上に
形成するものであるから、ＬＥＤチッゾとレンズのセン
ターがダレることなく、確実に一散させることができる
。(Effects of the Invention) As explained above, the method for manufacturing a lens for an LED lamp according to the present invention is a method for producing a lens for an LED lamp bonded on a substrate.
A circular frame is placed around the D chip, and a resin material is dropped from the top of the LID chip, and a convex shape is formed inside the frame using the surface tension of the resin material. Since the lens is formed on the LED chip, the center of the LED chip and the lens do not sag and can be reliably dispersed.

また、レンズ内Ｋ　ＬＥＤチッゾが埋設されるため、従
来のＬＩＩＣＤランプのように、　ＬＩＤチップとレン
ズとの間に空気層の空間が形成されることがなくなり、
ＬＥＤＩＤチップ上の吸収や散乱等の光学的損失を未然
に防止できる等の優れた効果を奏する。In addition, since the K LED chip is buried inside the lens, there is no air space between the LID chip and the lens, unlike in conventional LII CD lamps.
This has excellent effects such as being able to prevent optical losses such as absorption and scattering on the LED ID chip.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、本発明に係るＬＩＤランプのレンズを示す斜
視図、第２図、第３図は、本発明に係るＬＥＤランプの
レンズ１造要領を示す断面図、第４図は、従来例の断面
図である。 １・・・・・・ＬＥＤチッｆ　　　２・・・・・・基板
４・・・・・・枠　　　　　　　５・・・・・・樹脂材
６・・・・・・レンズ 第１図 ゞ２！！Ｉ　　　　　第３１！１ 第４１！１FIG. 1 is a perspective view showing a lens of an LID lamp according to the present invention, FIGS. 2 and 3 are cross-sectional views showing a method for manufacturing a lens of an LED lamp according to the present invention, and FIG. 4 is a conventional example. FIG. 1... LED chip f 2... Board 4... Frame 5... Resin material 6... Lens Figure 1 2! ! I 31st!1 41st!1

Claims (1)

【特許請求の範囲】[Claims] 基板上にボンディングしたＬＥＤチップを中心として、
その周囲を囲むようにして円形状の枠を配置し、前記Ｌ
ＥＤチップの上部から樹脂材を滴下させ、前記枠の内側
に前記樹脂材の表面張力を利用して凸状のレンズを、前
記ＬＥＤチップ上に形成することを特徴とするＬＥＤラ
ンプのレンズの製造方法。Centering on LED chips bonded onto the board,
Arrange a circular frame so as to surround it, and
Manufacturing a lens for an LED lamp, characterized in that a resin material is dropped from the top of the ED chip, and a convex lens is formed on the LED chip inside the frame by utilizing the surface tension of the resin material. Method.
JP59267772A 1984-12-19 1984-12-19 Production of lens of led lamp Granted JPS61144890A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59267772A JPS61144890A (en) 1984-12-19 1984-12-19 Production of lens of led lamp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59267772A JPS61144890A (en) 1984-12-19 1984-12-19 Production of lens of led lamp

Publications (2)

Publication Number Publication Date
JPS61144890A true JPS61144890A (en) 1986-07-02
JPH0422354B2 JPH0422354B2 (en) 1992-04-16

Family

ID=17449370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59267772A Granted JPS61144890A (en) 1984-12-19 1984-12-19 Production of lens of led lamp

Country Status (1)

Country Link
JP (1) JPS61144890A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07231120A (en) * 1994-02-18 1995-08-29 Rohm Co Ltd Light emitting device and manufacture thereof and manufacture of led head
DE19631736A1 (en) * 1996-08-06 1998-02-12 Stm Sensor Technologie Muenche Method and device for manufacturing lenses of micro-optical systems and light transmitter / light receiver system
KR20030033273A (en) * 2001-10-19 2003-05-01 (주) 나노옵토테크놀러지 Chip type l.d.m
JP2004087812A (en) * 2002-08-27 2004-03-18 Sanyo Electric Co Ltd Light emitting device
JP2006310856A (en) * 2005-04-27 2006-11-09 Samsung Electro Mech Co Ltd Lcd backlight unit using light-emitting diode
JP2007123891A (en) * 2005-10-27 2007-05-17 Lg Innotek Co Ltd Light emitting diode package and method for manufacturing the same
WO2007083481A1 (en) * 2006-01-19 2007-07-26 Rohm Co., Ltd. Semiconductor display device and process for manufacturing the same
WO2007086229A1 (en) 2006-01-26 2007-08-02 Sony Corporation Light source device and display device
JP2007242792A (en) * 2006-03-07 2007-09-20 Avago Technologies Ecbu Ip (Singapore) Pte Ltd Light emitting diode
JP2008021650A (en) * 2006-07-10 2008-01-31 Samsung Electro-Mechanics Co Ltd Direct-type illumination backlight apparatus
JP2012089848A (en) * 2010-10-21 2012-05-10 Semileds Optoelectronics Co Ltd Light emitting diode (led) package and method of fabrication
JP2014029341A (en) * 2013-09-17 2014-02-13 Nikon Corp Light receiving/emitting unit and optical encoder
US9142734B2 (en) 2003-02-26 2015-09-22 Cree, Inc. Composite white light source and method for fabricating
WO2016180816A1 (en) * 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Method for producing a lens for an optoelectronic lighting device
US9666772B2 (en) 2003-04-30 2017-05-30 Cree, Inc. High powered light emitter packages with compact optics
US10615324B2 (en) 2013-06-14 2020-04-07 Cree Huizhou Solid State Lighting Company Limited Tiny 6 pin side view surface mount LED

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07231120A (en) * 1994-02-18 1995-08-29 Rohm Co Ltd Light emitting device and manufacture thereof and manufacture of led head
DE19631736A1 (en) * 1996-08-06 1998-02-12 Stm Sensor Technologie Muenche Method and device for manufacturing lenses of micro-optical systems and light transmitter / light receiver system
EP0827214A1 (en) * 1996-08-06 1998-03-04 STM Sensor Technologie München GmbH Procedure and apparatus used to manufacture lenses of micro-optical systems and light transmitter/receiver systems
US5945041A (en) * 1996-08-06 1999-08-31 Stm Sensor Technologie Munchen Gmbh Method and device for producing lenses of microoptical systems and optical emitter/receiver system
KR20030033273A (en) * 2001-10-19 2003-05-01 (주) 나노옵토테크놀러지 Chip type l.d.m
JP2004087812A (en) * 2002-08-27 2004-03-18 Sanyo Electric Co Ltd Light emitting device
US9142734B2 (en) 2003-02-26 2015-09-22 Cree, Inc. Composite white light source and method for fabricating
US9666772B2 (en) 2003-04-30 2017-05-30 Cree, Inc. High powered light emitter packages with compact optics
US8148897B2 (en) 2005-04-27 2012-04-03 Samsung Electro-Mechanics Co., Ltd. Backlight unit for LCD using LED
JP2006310856A (en) * 2005-04-27 2006-11-09 Samsung Electro Mech Co Ltd Lcd backlight unit using light-emitting diode
US9012947B2 (en) 2005-10-27 2015-04-21 Lg Innotek Co., Ltd. Light emitting diode package and method of manufacturing the same
US8963188B2 (en) 2005-10-27 2015-02-24 Lg Innotek Co., Ltd. Light emitting diode package and method of manufacturing the same
JP2007123891A (en) * 2005-10-27 2007-05-17 Lg Innotek Co Ltd Light emitting diode package and method for manufacturing the same
US9054283B2 (en) 2005-10-27 2015-06-09 Lg Innotek Co., Ltd. Light emitting diode package and method of manufacturing the same
WO2007083481A1 (en) * 2006-01-19 2007-07-26 Rohm Co., Ltd. Semiconductor display device and process for manufacturing the same
JPWO2007083481A1 (en) * 2006-01-19 2009-06-11 ローム株式会社 Semiconductor display device and manufacturing method of semiconductor display device
WO2007086229A1 (en) 2006-01-26 2007-08-02 Sony Corporation Light source device and display device
JP2007242792A (en) * 2006-03-07 2007-09-20 Avago Technologies Ecbu Ip (Singapore) Pte Ltd Light emitting diode
US7887225B2 (en) 2006-07-10 2011-02-15 Samsung Led Co., Ltd. Direct-type backlight unit having surface light source
JP2008021650A (en) * 2006-07-10 2008-01-31 Samsung Electro-Mechanics Co Ltd Direct-type illumination backlight apparatus
JP2012089848A (en) * 2010-10-21 2012-05-10 Semileds Optoelectronics Co Ltd Light emitting diode (led) package and method of fabrication
US10615324B2 (en) 2013-06-14 2020-04-07 Cree Huizhou Solid State Lighting Company Limited Tiny 6 pin side view surface mount LED
JP2014029341A (en) * 2013-09-17 2014-02-13 Nikon Corp Light receiving/emitting unit and optical encoder
WO2016180816A1 (en) * 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Method for producing a lens for an optoelectronic lighting device

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Publication number Publication date
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