JPS61144885A - Heatproof, thin film optoelectric transducer and production thereof - Google Patents
Heatproof, thin film optoelectric transducer and production thereofInfo
- Publication number
- JPS61144885A JPS61144885A JP59267256A JP26725684A JPS61144885A JP S61144885 A JPS61144885 A JP S61144885A JP 59267256 A JP59267256 A JP 59267256A JP 26725684 A JP26725684 A JP 26725684A JP S61144885 A JPS61144885 A JP S61144885A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- silicide
- semiconductor
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 238000006243 chemical reaction Methods 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 7
- 229910021332 silicide Inorganic materials 0.000 abstract description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 56
- 238000010438 heat treatment Methods 0.000 description 7
- 150000002736 metal compounds Chemical class 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野１
本発明は耐熱性簿膜光電変換素子およびその製法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application 1] The present invention relates to a heat-resistant film photoelectric conversion element and a method for manufacturing the same.
［従来の技術］
従来、薄膜光電変換素子の電気的接続のために、たとえ
ば透明基板と半導体との間にＩＴＯ。[Prior Art] Conventionally, ITO has been used between a transparent substrate and a semiconductor, for example, for electrical connection of a thin film photoelectric conversion element.
ＩＴＯ／５ｎ０２．５ｎ０２、Ｉｎ２Ｏ３、Ｃｄ Ｓ
ｎＯｙ（ｘ−０，５〜２、ｙ−１２〜４）、Ｉｒ Ｏ（
ｚ−０，３３〜０．５）な ｉ−ｚ
どからなる金属化合物層が形成され、透明電極として用
いられたり、半導体上にＡ１、ＳＵＳ １鉄、Ｎｉ、
Ｃｕ、 Ｌｌんちゆう、Ｚｎ、 Ａｇなどの金属層が形
成され、裏面電極として用いられたりしている。ITO/5n02.5n02, In2O3, CdS
nOy (x-0, 5~2, y-12~4), IrO(
A metal compound layer consisting of i-z such as z-0,33~0.5) is formed and used as a transparent electrode, or a metal compound layer consisting of A1, SUS 1 iron, Ni, etc. is formed on the semiconductor.
A metal layer such as Cu, aluminum, Zn, or Ag is formed and used as a back electrode.
しかし、このようにして製造された薄膜光電変換素子を
５０℃程度以上の温度で使用すると、電気的接続に用い
た金属化合物あるいは金属が半導体中に拡散し、半導体
特性が低下する。とくに金属化合物層や金属層が接触す
る半導体が非晶質のばあいには、半導体特性の低下が著
しい。とりわけ屋外に設置されるアモルファスシリコン
（以下、ａ−８ｉという）系太陽電池のばあいには約８
０℃にもなり、太陽電池特性の低下が著しい。However, if the thin film photoelectric conversion element manufactured in this manner is used at a temperature of about 50° C. or higher, the metal compound or metal used for electrical connection will diffuse into the semiconductor, and the semiconductor characteristics will deteriorate. Particularly when the semiconductor with which the metal compound layer or metal layer is in contact is amorphous, the semiconductor properties are significantly deteriorated. In particular, in the case of amorphous silicon (hereinafter referred to as A-8I) solar cells installed outdoors, approximately 8
At temperatures as low as 0°C, the solar cell characteristics are significantly degraded.
［発明が解決しようとする問題点］
本発明は薄膜光電変換素子を高温で使用したばあいに生
ずる、電気的接続用の金属化合物層や金属層の半導体中
への拡散による薄膜光電変換素子の特性の低下を、電極
面での反射光の損失をおこさないようにして少なくする
ためになされたものである。[Problems to be Solved by the Invention] The present invention solves problems in thin film photoelectric conversion elements due to diffusion of metal compound layers and metal layers for electrical connection into semiconductors, which occurs when thin film photoelectric conversion elements are used at high temperatures. This was done in order to reduce the deterioration of the characteristics by preventing loss of reflected light on the electrode surface.
［問題点を解決するための手段］
本発明は、半導体とすくなくとも一方の電極との間に、
厚さ５〜１００人のシリサイド形成元素層を設けたこと
を特徴とする耐熱性薄膜光電変換素子、および半導体と
少なくとも一方の電極との間に厚さ５〜１００人のシリ
サイド形成元素層を設けた耐熱性薄膜光電変換素子を製
造する際に、半導体−５〜１００へのシリサイド形成元
素層−電極からなる層を形成したのち、１８０℃〜成膜
瀉度で０．５〜４時間熱処理することを特徴とする耐熱
性ＷＩＷＡ光電変換素子の製法に関する。[Means for Solving the Problems] The present invention provides a structure in which a semiconductor is connected between a semiconductor and at least one electrode.
A heat-resistant thin film photoelectric conversion element characterized in that a silicide-forming element layer with a thickness of 5 to 100 people is provided, and a silicide-forming element layer with a thickness of 5 to 100 people is provided between a semiconductor and at least one electrode. When manufacturing a heat-resistant thin film photoelectric conversion element, a layer consisting of a silicide-forming element layer and an electrode is formed on the semiconductor -5 to 100, and then heat treated at 180°C to a film formation temperature for 0.5 to 4 hours. The present invention relates to a method for manufacturing a heat-resistant WIWA photoelectric conversion element.
［実施例］
本発明の耐熱性薄膜光電変換素子においては、入光側の
電極または裏面電極と半導体層との間にシリサイド形成
元素層が設けられている。[Example] In the heat-resistant thin film photoelectric conversion element of the present invention, a silicide-forming element layer is provided between the light incident side electrode or back electrode and the semiconductor layer.
本発明に用いる半導体としては、非晶質または結晶質を
含む非晶質半導体であればとくに限定はない。このよう
な半導体の具体例としては、ａ−８ｉ：Ｈ、ａ−３ｉ：
Ｆ ： Ｈ、ａ−３ｉＧｅ： Ｈ、ａ−８ｉＳｎ：Ｈ
、ａ−８ｉＮ ： Ｈ、ａ−８ｉＧｅ： Ｆ ： Ｈ、
ａ−３ｉＳｎ： Ｆ ：Ｈ、ａ−８ｉ：Ｎ ：Ｆ
：Ｈ、ａ−８ｉＣ：Ｈ、ａ−８ｉＣ：Ｆ ：Ｈ、ａ−８
ｉＯ：Ｈ、ａ−８ｉＯ：Ｆ ：Ｈなどがあげれらる。前
記半導体は、ｐ型、ｎ型、真性のいずれであってもよい
。The semiconductor used in the present invention is not particularly limited as long as it is amorphous or an amorphous semiconductor containing crystalline. Specific examples of such semiconductors include a-8i:H, a-3i:
F: H, a-3iGe: H, a-8iSn:H
, a-8iN: H, a-8iGe: F: H,
a-3iSn: F:H, a-8i:N:F
:H, a-8iC:H, a-8iC:F :H, a-8
Examples include iO:H and a-8iO:F:H. The semiconductor may be p-type, n-type, or intrinsic.
前記シリサイド形成元素としては、たとえばＬｉ１Ｈａ
、にａ、 Ｒｈ、 Ｃｓ、 ｔ＋ｏ、ｃａ、 Ｓｒ、Ｂ
ａ１Ｓｃ、 Ｙ 。As the silicide forming element, for example, Li1Ha
, nia, Rh, Cs, t+o, ca, Sr, B
a1Sc, Y.
Ｌａ、 Ｔｉ、 Ｚｒ、Ｈｆ、 Ｖ 、 Ｎｂ、 Ｔａ
、 Ｃｒ、Ｎｏ、 Ｗ 、Ｈｎ。La, Ti, Zr, Hf, V, Nb, Ta
, Cr, No., W, Hn.
Ｒｅ、 Ｆｅ、 Ｒｕ、 Ｏｓ、 Ｃｏ、 Ｒｈ、 Ｉ
ｒ、 Ｎｉ、ｐａ、 ｐｉなどがあげられる。Re, Fe, Ru, Os, Co, Rh, I
Examples include r, Ni, pa, pi, etc.
前記入光側の電極としては、たとえばＩＴＯ１ＩＴＯ／
５ｎ０２、ＳｎＯ２、Ｉｎ２Ｏ３、Ｃｄ ＳｎＯ（ｘ
−０，５〜ｙ
２、■−２〜４）、ｌｒ Ｏ（ｚ−０，３３〜０．５）
な １−ｚ
どからなる金属化合物層からなる電極が代表例としてあ
げられるが、これらに限定されるものではない。As the electrode on the light input side, for example, ITO1ITO/
5n02, SnO2, In2O3, Cd SnO(x
-0,5~y2, ■-2~4), lr O(z-0,33~0.5)
Typical examples include electrodes made of metal compound layers such as 1-z, but are not limited thereto.
前記裏面電極としては、通常裏面電極として用いられる
金属、合金などから形成される裏面電極であればとくに
限定なく使用されつるが、前記シリサイド形成元素以外
の元素からなる裏面電極あるいは前記シリカサイド形成
元素を含まない合金などから形成されている電極である
ことが、形成されるシリサイド層の厚さなどを所望の値
にしやすく、経時変化が少ないなどの点から好ましい。The back electrode may be used without particular limitation as long as it is a back electrode formed from a metal, alloy, etc. that is normally used as a back electrode, but it may be a back electrode made of an element other than the silicide-forming element or the silica side-forming element. It is preferable that the electrode be made of an alloy or the like that does not contain .
前記裏面電極の具体例としては、ＡＩ、ＡＱ、Ａｌｌ。Specific examples of the back electrode include AI, AQ, and All.
ＳＯ８、Ｎｉ、 Ｃｕ、 Ｌｌんちゅう、鉄、Ｉｎ、Ｔ
ｉなど、好ましくは波長０．６．以上の光に対する反射
率が２０〜９９％、さらに好ましくは４５〜９９％と高
く、電気伝導度が０．１ｘｌＯ！ 〜６．２ｘ１Ｏ５（
Ω−ｃｍ）−１と大きい金属から形成された電極があげ
られるが、これらに限定されるものではない。前記光に
対する反射率が高く、電気伝導度の大きい裏面電極とし
ては、Ｃｕ、 ＡＱなどの金属から形成された裏面電極
があげられる。なお裏面電極は単層であってもよく、多
層であってもよいが、多層のばあいにはシリサイド形成
元素層に接する層が前記光に対する反射率が高く、電気
伝導度の大きい金属層であることが、反射光の有効利用
、直列抵抗の低下などの点から好ましい。SO8, Ni, Cu, Llinchu, Iron, In, T
i, etc., preferably with a wavelength of 0.6. The reflectance for the above light is as high as 20-99%, more preferably 45-99%, and the electrical conductivity is 0.1xlO! ~6.2x1O5(
Examples include, but are not limited to, electrodes formed from metals having a large resistance (Ω-cm)-1. Examples of the back electrode having a high reflectance to light and high electrical conductivity include back electrodes made of metals such as Cu and AQ. Note that the back electrode may be a single layer or a multilayer, but in the case of a multilayer, the layer in contact with the silicide-forming element layer is a metal layer that has a high reflectance to the light and a high electrical conductivity. It is preferable that there be 100% from the viewpoint of effective use of reflected light, reduction in series resistance, etc.
なお本発明においては半導体と少なくとも−方の電極と
の間にシリサイド形成元素層が設けられていればよいが
、以下の説明は裏面電極と半導体との間にシリサイド形
成元素層が設けられたばあいについて行なう。Note that in the present invention, it is sufficient that a silicide-forming element layer is provided between the semiconductor and at least the negative electrode, but the following explanation applies only when a silicide-forming element layer is provided between the back electrode and the semiconductor. Follow Ai.
本発明においては、半導体と裏面電極との間に厚さ５〜
１００人、好ましくは１〜４０人のシリサイド形成元素
層が設けられている。該シリサイド形成元素層の厚さが
５人未満になると、均一で品質のよい層がえられなくな
ったり、裏面電極を形成する金属の半導体中への熱によ
る拡散を充分防止することができなくなったりする。In the present invention, the thickness between the semiconductor and the back electrode is 5 to 5.
A layer of 100, preferably 1 to 40, silicide-forming elements is provided. If the thickness of the silicide-forming element layer is less than 5 layers, it may become impossible to obtain a uniform and high-quality layer, or it may become impossible to sufficiently prevent the metal forming the back electrode from diffusing into the semiconductor due to heat. do.
また層の厚さが１００人をこえると、該層が存在するた
めに直列電気抵抗が増したり、光の吸収が増し、裏面電
極面での反射光が少な（なったり、シリサイド形成元素
層の形成に時間がかかつたりするという問題が生ずる。Furthermore, if the thickness of the layer exceeds 100 layers, the presence of the layer increases the series electrical resistance, increases the absorption of light, and reduces the amount of light reflected on the back electrode surface, or the silicide-forming element layer increases. A problem arises in that it takes a long time to form.
シリサイド形成元素層の厚さは蒸着時の振動子モニター
値を用いて測定してもよいし、８１８８などの表面分析
から求めた厚さの検量線を利用して測定してもよい。The thickness of the silicide-forming element layer may be measured using a vibrator monitor value during vapor deposition, or may be measured using a thickness calibration curve obtained from surface analysis such as 8188.
つぎに本発明の耐熱性薄膜光電変換素子の製法を、光入
射側から順にｐ型、ｉ型、ｎ型の半導体を設けた太陽電
池を例にとり説明する。Next, a method for manufacturing a heat-resistant thin film photoelectric conversion element of the present invention will be explained using as an example a solar cell in which p-type, i-type, and n-type semiconductors are provided in order from the light incident side.
なお本明細書にいう薄膜充電変換素子とは、厚さ１０２
〜１０６Ａ程度の半導体層、好ましくは０、０２〜１０
０−の非晶質半導体層を含む、たとえば太陽電池、光検
出素子、光電面ドラム、レーザー、エレクトロルミネッ
センス素子などで代表される光電変換素子を意味する。Note that the thin film charge conversion element referred to in this specification refers to a thickness of 102
~106A semiconductor layer, preferably 0.02~10
It means a photoelectric conversion element including a 0- amorphous semiconductor layer, such as a solar cell, a photodetection element, a photocathode drum, a laser, an electroluminescence element, etc.
まず透明電極を設けた透明基板上に、常法により非晶質
のｐ層、ｉ層、ｎ層を形成する。そののちシリサイド形
成元素の１種であるクロムを用いて通常の電子ビーム蒸
着法により、所定の厚さの層を形成する。もちろんクロ
ムをスパッター用ターゲットを用いてスパッター法によ
り堆積させてもよい。First, amorphous p-layer, i-layer, and n-layer are formed by a conventional method on a transparent substrate provided with a transparent electrode. Thereafter, a layer of a predetermined thickness is formed using chromium, which is one of the silicide-forming elements, by a normal electron beam evaporation method. Of course, chromium may be deposited by sputtering using a sputtering target.
そののち裏面電極を常法により堆積させることにより、
本発明の耐熱性薄膜光電変換素子がえられる。After that, by depositing the back electrode by a conventional method,
A heat-resistant thin film photoelectric conversion element of the present invention can be obtained.
上記説明ではｐｉｎ型太陽電池について説明したが、シ
ョットキ型やｐｎ型の太陽電池あるいは他の光電変換素
子についても同様である。また太烏電池はへテロ接合の
太陽電池であってもよく、ホモ接合の太陽電池であって
もよい。In the above description, a pin type solar cell has been described, but the same applies to Schottky type or pn type solar cells or other photoelectric conversion elements. Furthermore, the Taikarasu cell may be a heterojunction solar cell or a homojunction solar cell.
このようにして作製された本発明の耐熱性薄膜充電変換
素子は、このままでも加熱による光電変換素子特性の低
下が少なく良好な特性を有するものであるが、さらに１
８０℃〜成膜温度（１８０〜４００℃程度）でＯ，Ｓ〜
４時間程度熱処理すると、シリサイド形成元素層がシリ
サイド化し、裏面電極や半導体であるＳｉ層との接触を
よくすることができ、その界面の直列抵抗を減少させる
ことができる。The heat-resistant thin film charging/converting device of the present invention produced in this manner has good characteristics with little deterioration in photoelectric conversion device characteristics due to heating even as it is;
O, S ~ at 80℃ ~ film forming temperature (approximately 180~400℃)
When the heat treatment is performed for about 4 hours, the silicide-forming element layer becomes silicide, making it possible to improve contact with the back electrode and the semiconductor Si layer, and reducing the series resistance at the interface.
このようにして製造される本発明の耐熱性薄膜光電変換
素子は、たとえば５０℃以上のような高温で使用される
、あるいは使用中に５０℃以上になることがあるような
用途に使用される太陽電池や光検出素子などとして好適
に使用される。The heat-resistant thin film photoelectric conversion element of the present invention manufactured in this way is used at high temperatures such as 50°C or higher, or used in applications where the temperature may reach 50°C or higher during use. Suitable for use as solar cells, photodetecting elements, etc.
とくに屋外に設置され、使用温度が８０℃にもなる太陽
電池に用いたばあいに、本発明の効果が大きく発揮され
る。またシリサイド層が薄いため、長波長光の裏面電極
面での反射ロスが極めて少ない。The effects of the present invention are particularly effective when used in solar cells that are installed outdoors and have operating temperatures of as much as 80°C. Furthermore, since the silicide layer is thin, there is extremely little reflection loss of long-wavelength light on the back electrode surface.
つぎに本発明の耐熱性ＷＩｉａ光電変換素子を実施例に
もとづき説明する。Next, the heat-resistant WIia photoelectric conversion element of the present invention will be explained based on Examples.
実施例１
厚さ１０００人のＩＴＯ／ ５ｎＯｚ透明電極を設けた
厚さ１履の青板ガラス基板上に、基板温度約２００℃、
圧力的１ＴＯｒｒにて、ＳｉＨ４、Ｂ２Ｈ，からなる混
合ガス、３１）Ｉ４、Ｈ２からなる混合ガス、５ｔＨａ
、ＰＨ３からなる混合ガスをこの順に用いて、グロー
放電分解法にてそれぞれアモルファスタイプのｐｌを１
２０人、ｉ層を５０００人、０層を３００人の厚さにな
るように堆積させた。Example 1 A 1000-thick ITO/5nOz transparent electrode was placed on a 1-layer-thick blue plate glass substrate at a substrate temperature of about 200°C.
At a pressure of 1 TOrr, a mixed gas consisting of SiH4, B2H, 31) A mixed gas consisting of I4, H2, 5tHa
, PH3 was used in this order, and 1 pl of each amorphous type was obtained by glow discharge decomposition method.
The layers were deposited to a thickness of 20 layers, an i layer of 5000 layers, and a 0 layer of 300 layers.
そののち、クロム層を電子ビーム蒸着法にて１０４ Ｔ
Ｏｒｒで厚さが２０人になるようにｎ層上に堆積させた
のち、つづいてＡ（ｌを１０００人の厚さに堆積させた
。ついで２００℃で２Ｒ間熱処理して太陽電池を製造し
た。After that, a chromium layer was deposited at 104 T using an electron beam evaporation method.
Orr was deposited on the n layer to a thickness of 20 layers, followed by A(l) deposited to a thickness of 1000 layers.Then, heat treatment was performed at 200° C. for 2R to produce a solar cell. .
えられた太陽電池のｐ層、ｉ層、ｎ層、クロム層および
＾ｇ層はそれぞれ１２０＾、５ｏｏｏ人、３ＧＯＡ 、
２０人、１０００人ｆ）厚すテアッタ。The p-layer, i-layer, n-layer, chromium layer and g-layer of the obtained solar cell are respectively 120^, 5ooo, 3GOA,
20 people, 1000 people f) Atsushitaatta.
えられた太陽電池の特性および２３０℃で６時間加熱し
たのちの特性をＡＨ−１，１００＋ｅＷ／ｉのソーラー
シミュレーターを用いて測定した。その結果を第１表に
示す。The characteristics of the obtained solar cell and the characteristics after heating at 230° C. for 6 hours were measured using an AH-1,100+eW/i solar simulator. The results are shown in Table 1.
実施例２
２００℃で２時間熱処理しなかったほかは実施例１と同
様にして太陽電池を作製し、えられた太陽電池の特性を
測定した。その結果を第１表に示す。Example 2 A solar cell was produced in the same manner as in Example 1, except that the heat treatment at 200° C. for 2 hours was not performed, and the characteristics of the obtained solar cell were measured. The results are shown in Table 1.
比較例１
クロム層を設けなかったほかは実施例１と同様にして太
陽電池を作製し、えられた太Ｆｉｇ池の特性および２３
０℃で６時間加熱したのちの特性を測定した。その結果
を第１表に示す。Comparative Example 1 A solar cell was produced in the same manner as in Example 1 except that the chromium layer was not provided, and the characteristics of the obtained solar cell and 23
The characteristics were measured after heating at 0° C. for 6 hours. The results are shown in Table 1.
Ｃ以下余白）
［発明の効果］
以上説明したように、薄膜光電変換素子を製造するばあ
いに、半導体と裏面電極との間に薄いシリサイド形成元
素層を設けることにより、薄膜光電変換素子を高温で使
用したばあいにも、裏面電極を構成する金属成分や入光
側の電極を構成する金属化合物成分が半導体中に拡散す
ることを防ぎ、薄膜光電変換素子の低下を少なくするこ
とができる。さらにシリサイド形成元素層を５〜１００
人、好ましくは７〜４０Ａというように薄（形成するた
め、太陽電池のばあいには長波長光の裏面反射光を充分
利用できるなどの効果が生ずる。また半導体−シリサイ
ド形成元素層−電極を積層させたのち１８０℃〜成ＩＩ
温度で０１５〜４時間熱処理することにより、えられる
耐熱性′？１ＩＷＡ光電変換素子特性（とくに太陽電池
特性のうちの短絡電流およびフィルファクター）をさら
に改良することができる。(Blank below C) [Effects of the Invention] As explained above, when manufacturing a thin film photoelectric conversion element, by providing a thin silicide-forming element layer between the semiconductor and the back electrode, the thin film photoelectric conversion element can be heated to high temperatures. When used in the semiconductor device, it is possible to prevent the metal component constituting the back electrode and the metal compound component constituting the light incident side electrode from diffusing into the semiconductor, thereby reducing deterioration of the thin film photoelectric conversion element. Furthermore, 5 to 100 layers of silicide forming elements are added.
In the case of solar cells, effects such as the ability to fully utilize the back-reflected light of long wavelength light are produced.Also, the semiconductor-silicide-forming element layer-electrode layer is formed as thin as 7 to 40A. After laminating, 180°C ~ Formation II
Heat resistance obtained by heat treatment at a temperature of 0.15 to 4 hours. The characteristics of the 1IWA photoelectric conversion element (particularly the short circuit current and fill factor of the solar cell characteristics) can be further improved.
Claims (1)
１００Åのシリサイド形成元素層を設けたことを特徴と
する耐熱性薄膜光電変換素子。 ２ 前記シリサイド形成元素層の厚さが７〜４０Åであ
る特許請求の範囲第１項記載の耐熱性薄膜光電変換素子
。 ３ 半導体が厚さ０．０２〜１００μｍの非晶質薄膜で
ある特許請求の範囲第１項記載の耐熱性薄膜光電変換素
子。 ４ 裏面電極を形成する金属の波長０．６μｍ以上の光
に対する反射率が２０〜９９％で、電気伝導度が０．１
×１０＾５〜６．２×１０＾５（Ω・ｃｍ）＾−＾１で
ある特許請求の範囲第１項記載の耐熱性薄膜光電変換素
子。 ５ 半導体と少なくとも一方の電極との間に、厚さ５〜
１００Åのシリサイド形成元素層を設けた耐熱性薄膜光
電変換素子を製造する際に、半導体−厚さ５〜１００Å
のシリサイド形成元素層−電極からなる層を形成したの
ち、１８０℃〜成膜温度で０．５〜４時間熱処理するこ
とを特徴とする耐熱性薄膜光電変換素子の製法。[Claims] 1. Between the semiconductor and at least one electrode, there is a
A heat-resistant thin film photoelectric conversion element characterized by providing a 100 Å layer of a silicide-forming element. 2. The heat-resistant thin film photoelectric conversion element according to claim 1, wherein the silicide-forming element layer has a thickness of 7 to 40 Å. 3. The heat-resistant thin film photoelectric conversion element according to claim 1, wherein the semiconductor is an amorphous thin film with a thickness of 0.02 to 100 μm. 4 The reflectance of the metal forming the back electrode for light with a wavelength of 0.6 μm or more is 20 to 99%, and the electrical conductivity is 0.1
x10^5 to 6.2 x 10^5 (Ωcm)^-^1. The heat-resistant thin film photoelectric conversion element according to claim 1. 5 Between the semiconductor and at least one electrode, there is a thickness of 5 to
When manufacturing a heat-resistant thin film photoelectric conversion element provided with a 100 Å silicide-forming element layer, a semiconductor layer with a thickness of 5 to 100 Å is used.
A method for manufacturing a heat-resistant thin film photoelectric conversion element, which comprises forming a layer consisting of a silicide-forming element layer and an electrode, and then heat-treating the layer at a film-forming temperature of 180° C. for 0.5 to 4 hours.
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59267256A JPH065770B2 (en) | 1984-12-18 | 1984-12-18 | Manufacturing method of heat-resistant thin film photoelectric conversion element |
| CA483934A CA1270931C (en) | 1984-06-15 | 1985-06-13 | Heat-resistant thin film photoelectric converter with diffusion blocking layer |
| AU43651/85A AU576594B2 (en) | 1984-06-15 | 1985-06-13 | Heat-resistant thin film photoelectric converter |
| DE8585107371T DE3581561D1 (en) | 1984-06-15 | 1985-06-14 | HEAT-RESISTANT PHOTOELECTRIC THICK FILM CONVERTER. |
| EP85107371A EP0165570B1 (en) | 1984-06-15 | 1985-06-14 | Heat-resistant thin film photoelectric converter |
| KR1019850004216A KR910005761B1 (en) | 1984-06-15 | 1985-06-14 | Heat-resistant thin film photo electric converter and its manufacturing method |
| CN85104921A CN1003267B (en) | 1984-10-11 | 1985-06-27 | Heat-pesistant thin film photoelectric converter |
| US06/942,644 US4765845A (en) | 1984-06-15 | 1986-12-17 | Heat-resistant thin film photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59267256A JPH065770B2 (en) | 1984-12-18 | 1984-12-18 | Manufacturing method of heat-resistant thin film photoelectric conversion element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61144885A true JPS61144885A (en) | 1986-07-02 |
| JPH065770B2 JPH065770B2 (en) | 1994-01-19 |
Family
ID=17442308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59267256A Expired - Lifetime JPH065770B2 (en) | 1984-06-15 | 1984-12-18 | Manufacturing method of heat-resistant thin film photoelectric conversion element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH065770B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61225877A (en) * | 1985-03-29 | 1986-10-07 | Kyocera Corp | Photovoltaic device |
| JPS63159851U (en) * | 1987-04-08 | 1988-10-19 | ||
| JPH0290574A (en) * | 1988-09-27 | 1990-03-30 | Kanegafuchi Chem Ind Co Ltd | Heat resistant solar cell |
| JP2002261302A (en) * | 2001-02-28 | 2002-09-13 | Kyocera Corp | THIN-FILM CRYSTALLINE Si SOLAR CELL |
| JP2010225735A (en) * | 2009-03-23 | 2010-10-07 | Mitsubishi Electric Corp | Photosensor and method of manufacturing the same |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5858777A (en) * | 1981-10-05 | 1983-04-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor element |
| JPS5878473A (en) * | 1981-11-05 | 1983-05-12 | Seiko Epson Corp | Thin film solar battery |
| JPS5892280A (en) * | 1981-11-27 | 1983-06-01 | Seiko Epson Corp | Thin film solar cell |
| JPS5892281A (en) * | 1981-11-27 | 1983-06-01 | Seiko Epson Corp | Thin film solar cell |
| JPS60210825A (en) * | 1984-04-04 | 1985-10-23 | Hitachi Ltd | Solar battery |
| JPS60211880A (en) * | 1984-04-05 | 1985-10-24 | Semiconductor Energy Lab Co Ltd | Manufacture of photoelectric conversion device |
| JPS6126268A (en) * | 1984-07-16 | 1986-02-05 | Kanegafuchi Chem Ind Co Ltd | Heat-resistant amorphous silicon solar cell and manufacture thereof |
-
1984
- 1984-12-18 JP JP59267256A patent/JPH065770B2/en not_active Expired - Lifetime
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5858777A (en) * | 1981-10-05 | 1983-04-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor element |
| JPS5878473A (en) * | 1981-11-05 | 1983-05-12 | Seiko Epson Corp | Thin film solar battery |
| JPS5892280A (en) * | 1981-11-27 | 1983-06-01 | Seiko Epson Corp | Thin film solar cell |
| JPS5892281A (en) * | 1981-11-27 | 1983-06-01 | Seiko Epson Corp | Thin film solar cell |
| JPS60210825A (en) * | 1984-04-04 | 1985-10-23 | Hitachi Ltd | Solar battery |
| JPS60211880A (en) * | 1984-04-05 | 1985-10-24 | Semiconductor Energy Lab Co Ltd | Manufacture of photoelectric conversion device |
| JPS6126268A (en) * | 1984-07-16 | 1986-02-05 | Kanegafuchi Chem Ind Co Ltd | Heat-resistant amorphous silicon solar cell and manufacture thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61225877A (en) * | 1985-03-29 | 1986-10-07 | Kyocera Corp | Photovoltaic device |
| JPS63159851U (en) * | 1987-04-08 | 1988-10-19 | ||
| JPH0290574A (en) * | 1988-09-27 | 1990-03-30 | Kanegafuchi Chem Ind Co Ltd | Heat resistant solar cell |
| JP2002261302A (en) * | 2001-02-28 | 2002-09-13 | Kyocera Corp | THIN-FILM CRYSTALLINE Si SOLAR CELL |
| JP2010225735A (en) * | 2009-03-23 | 2010-10-07 | Mitsubishi Electric Corp | Photosensor and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH065770B2 (en) | 1994-01-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100237661B1 (en) | Back reflector layer, method for forming it, and photovoltaic element using it and manufacturing method thereof | |
| KR950001956B1 (en) | Multi-junctional semiconductor device | |
| US4765845A (en) | Heat-resistant thin film photoelectric converter | |
| EP0538840B1 (en) | Photovoltaic device | |
| US5603778A (en) | Method of forming transparent conductive layer, photoelectric conversion device using the transparent conductive layer, and manufacturing method for the photoelectric conversion device | |
| US5668050A (en) | Solar cell manufacturing method | |
| JPH0656883B2 (en) | Semiconductor device | |
| US4956023A (en) | Integrated solar cell device | |
| JPS61144885A (en) | Heatproof, thin film optoelectric transducer and production thereof | |
| JPS613471A (en) | Semiconductor device | |
| JP3025392B2 (en) | Thin film solar cell and manufacturing method | |
| JP3162261B2 (en) | Solar cell manufacturing method and manufacturing apparatus | |
| JPH10226598A (en) | Transparent conductive titanium oxide film and its production | |
| JPS60210825A (en) | Solar battery | |
| JPS61212070A (en) | Thin film semiconductor solar cell containing amorphous material | |
| JPS6191973A (en) | Heat resisting thin film photoelectric conversion element and manufacture thereof | |
| CN110797428A (en) | Heterojunction solar cell | |
| JPS63503103A (en) | Multi-junction semiconductor device | |
| JP2648698B2 (en) | Heat-resistant solar cell | |
| JPH0542834B2 (en) | ||
| JPS61283174A (en) | Heat resistant thin film photoelectric converter and manufacture thereof | |
| JPH0456170A (en) | Manufacture of thin-film solar cell | |
| JP2757896B2 (en) | Photovoltaic device | |
| JPS59154081A (en) | Solar battery | |
| JP2952121B2 (en) | Photovoltaic element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |