JPS61283174A - Heat resistant thin film photoelectric converter and manufacture thereof - Google Patents
Heat resistant thin film photoelectric converter and manufacture thereofInfo
- Publication number
- JPS61283174A JPS61283174A JP60124789A JP12478985A JPS61283174A JP S61283174 A JPS61283174 A JP S61283174A JP 60124789 A JP60124789 A JP 60124789A JP 12478985 A JP12478985 A JP 12478985A JP S61283174 A JPS61283174 A JP S61283174A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor
- silicide layer
- layer
- film photoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 36
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 8
- 150000002736 metal compounds Chemical class 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 5
- 230000006866 deterioration Effects 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 52
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006852 SnOy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は耐熱性薄膜光電変換素子およびその製法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a heat-resistant thin film photoelectric conversion element and a method for manufacturing the same.
［従来の技術］
従来、薄膜光電変換素子の電気的接続のために、たとえ
ば透明基板と半導体との間にＩＴＯ１ＩＴＯ／５ｎＯｘ
、５ｎｏ２、ｆｒｉｚ ０３、Ｃｄｘ５ｎＯｙ（ｘ＝０
．５〜２、ｙ＝１２〜４）、Ｉｒ、０ （ｚ−０，
３３〜０．５）な １−Ｚ
どからなる金属化合物層が形成され、透明電極として用
いられたり、半導体上にＭ、 Ａｕ、 Ｃｕ。[Prior Art] Conventionally, for electrical connection of thin film photoelectric conversion elements, for example, ITO1ITO/5nOx was used between a transparent substrate and a semiconductor.
, 5no2, friz 03, Cdx5nOy (x=0
．． 5-2, y=12-4), Ir, 0 (z-0,
A metal compound layer consisting of 1-Z (33-0.5) or the like is formed and used as a transparent electrode, or on a semiconductor with M, Au, or Cu.
しんちゅう、Ｚｎ、 Ａｇなとの金属層が形成され、裏
面電極として用いられたりしている。A metal layer such as brass, Zn, or Ag is formed and used as a back electrode.
しかし、このようにして製造された薄膜光電変換素子を
５０℃程度以上の温度で使用すると、電気的接続に用い
た金属化合物あるいは金属が半導体中に拡散し、半導体
特性が低下する。とくに金属化合物層や金属層が接触す
る半導体が非晶質のばあいには、半導体特性の低下が著
しい。とりわけ屋外に設置されるアモルファスシリコン
（以下、ａ−８ｉという）系太陽電池のばあいには約８
０℃にもなり、太陽電池特性の低下が著しい。However, if the thin film photoelectric conversion element manufactured in this manner is used at a temperature of about 50° C. or higher, the metal compound or metal used for electrical connection will diffuse into the semiconductor, and the semiconductor characteristics will deteriorate. Particularly when the semiconductor with which the metal compound layer or metal layer is in contact is amorphous, the semiconductor properties are significantly deteriorated. In particular, in the case of amorphous silicon (hereinafter referred to as A-8I) solar cells installed outdoors, approximately 8
At temperatures as low as 0°C, the solar cell characteristics are significantly degraded.
［発明が解決しようとする問題点］
本発明は薄膜光電変換素子を高温で使用したばあいに生
ずる、電気的接続用の金属化合物層や金属層の半導体中
への拡散による薄膜光電変換素子の特性の低下を少なく
するためになされたものである。[Problems to be Solved by the Invention] The present invention solves problems in thin film photoelectric conversion elements due to diffusion of metal compound layers and metal layers for electrical connection into semiconductors, which occurs when thin film photoelectric conversion elements are used at high temperatures. This was done to reduce the deterioration of characteristics.
［問題点を解決するための手段］
本発明は、半導体と少なくとも一方の電極との間にシリ
サイド層を設けたことを特徴とする耐熱性薄膜光電変換
素子、および半導体と少なくとも一方の電極との間にシ
リサイド層を設けた耐熱性Ｉｌｌ光電変換素子を製造す
る際に、半導体−シリサイド層−電極からなる層を形成
したのち、１８０℃〜成膜温度で０，５〜４時間熱処理
することを特徴とする耐熱性ＷｊｒＩ！Ａ光電変換素子
の製法に関する。[Means for Solving the Problems] The present invention provides a heat-resistant thin film photoelectric conversion element characterized in that a silicide layer is provided between a semiconductor and at least one electrode, and a heat-resistant thin film photoelectric conversion element characterized in that a silicide layer is provided between a semiconductor and at least one electrode. When manufacturing a heat-resistant Ill photoelectric conversion element with a silicide layer provided between them, it is recommended that after forming a layer consisting of a semiconductor, a silicide layer, and an electrode, heat treatment is performed at a temperature of 180° C. to film formation temperature for 0.5 to 4 hours. Features heat resistance WjrI! A: Regarding a method for manufacturing a photoelectric conversion element.
［実施例］
本発明の耐熱性簿膜光電変換素子においては、入光側の
電極または裏面電極と半導体層との間にシリサイド層が
設けられている。[Example] In the heat-resistant film photoelectric conversion element of the present invention, a silicide layer is provided between the light incident side electrode or back electrode and the semiconductor layer.
本発明に用いる半導体としては、非晶質または結晶質を
含む非晶質半導体であればとくに限定はない。このよう
な半導体の具体例としては、ａ−３ｉ：Ｈ、ａ−３ｉ：
Ｆ ： Ｈ、ａ−８ｉＧｅ：Ｈ５ａ−８ｉＳｎ：Ｈ、
ａ−３ｉＮ ：Ｈ、ａ−８ｔＧｅ：Ｆ ：Ｈ、ａ−８ｉ
Ｓｎ：Ｆ ：Ｈ１ａ−８ｉ：Ｎ ：Ｆ ：Ｈ、ａ−３ｉ
Ｃ：Ｈ１ａ−８ｉＣ：Ｆ ：ｔｌ 、 ａ−８ｉＯ：Ｈ
、ａ−８ｉＯ：Ｆ ：Ｈなどがあげれらる。前記半導体
は、ｐ型、ｎ型、真性のいずれであってもよい。The semiconductor used in the present invention is not particularly limited as long as it is amorphous or an amorphous semiconductor containing crystalline. Specific examples of such semiconductors include a-3i:H, a-3i:
F: H, a-8iGe:H5a-8iSn:H,
a-3iN:H, a-8tGe:F:H, a-8i
Sn:F:H1a-8i:N:F:H, a-3i
C:H1a-8iC:F:tl, a-8iO:H
, a-8iO:F:H, and the like. The semiconductor may be p-type, n-type, or intrinsic.
前記シリサイドとしては、たとえばＲｂ、 Ｃ３゜ＨＱ
、ｃａ、 Ｓｒ、 Ｂａ、 ｓｃ、 Ｙ １Ｌａ、 Ｔ
ｉ、Ｚｒ、 Ｈｆ、 Ｖ 。Examples of the silicide include Rb, C3゜HQ
, ca, Sr, Ba, sc, Y 1La, T
i, Zr, Hf, V.
Ｎｂ１ＴａＳＣｒ、 Ｎｏ、Ｗ 、Ｈｎ、 Ｒｅ、 Ｆ
ｅ１Ｒｕ、 Ｏｓ、 ｃｏ。Nb1TaSCr, No, W, Hn, Re, F
e1Ru, Os, co.
Ｒ１１、Ｉｒ１Ｎｔ、Ｐｄ、 Ｐｔなどのシリサイドが
アケラれる。Silicides such as R11, Ir1Nt, Pd, and Pt are removed.
前記入光側の電極としては、たとえばＩＴＯ。The electrode on the light input side is made of, for example, ITO.
ＩＴＯ／ＳｎＯ２，５ｎｏ２、Ｉｎｚ Ｏｓ、Ｃｄ
ＳｎＯｙ（ｘ−０，５〜２、ｙ−２〜４）、Ｉｒ Ｏ（
Ｚ＝０．３３〜０．５）なＺ １−Ｚ
どからなる金属化合物層からなる電極が代表例としてあ
げられるが、これらに限定されるものではない。ITO/SnO2, 5no2, Inz Os, Cd
SnOy (x-0, 5~2, y-2~4), IrO (
A typical example is an electrode made of a metal compound layer such as Z 1-Z where Z=0.33 to 0.5), but is not limited thereto.
前記裏面電極としては、通常裏面電極として用いられる
金属、合金などから形成される裏面電極であればとくに
限定なく使用されうる。The back electrode may be any back electrode made of a metal, alloy, or the like that is normally used as a back electrode.
前記裏面電極の具体例としては、＃、 Ａｇ、 ＡＵ、
Ｃｕ、しんちゅう、Ｚｎなど、好ましくは波長０．６ρ
以上の光に対する反射率が２０〜９９％、さらに好まし
くは４５〜９９％と高く、電気伝導度が０．１×１０Ｓ
〜６．２Ｘ１０Ｓ （Ω・ｃｍ） −’と大きい金属
から形成された電極があげられるが、これらに限定され
るものではない。前記光に対する反射率が高く、電気伝
導度の大きい裏面電極としては、Ｃｕ、 Ａｇなとの金
属から形成された仮面電極があげられる。なお裏面電極
は単層であってもよく、多層であってもよいが、多層の
ばあいにはシリサイド層に接する層が前記光に対する反
射率が高く、電気伝導度の大きい金属層であることが、
反射光の有効利用、直列抵抗の低下などの点から好まし
い。Specific examples of the back electrode include #, Ag, AU,
Cu, brass, Zn, etc., preferably wavelength 0.6ρ
The reflectance for the above light is as high as 20-99%, more preferably 45-99%, and the electrical conductivity is 0.1 x 10S.
An example is an electrode made of a metal with a diameter of 6.2×10S (Ω·cm) −′, but the electrode is not limited thereto. Examples of the back electrode having a high reflectance to light and high electrical conductivity include mask electrodes made of metals such as Cu and Ag. Note that the back electrode may be a single layer or a multilayer, but in the case of a multilayer, the layer in contact with the silicide layer should be a metal layer that has a high reflectance to the light and a high electrical conductivity. but,
This is preferable from the viewpoints of effective use of reflected light and reduction in series resistance.
なお本発明においては半導体と少なくとも一方の電極と
の間にシリサイド層が設けられていればよいが、以下の
説明は裏面電極と半導体との間にシリサイド層が設けら
れたばあいについて行なう。In the present invention, it is sufficient that a silicide layer is provided between the semiconductor and at least one of the electrodes, but the following description will be made regarding the case where the silicide layer is provided between the back electrode and the semiconductor.
本発明においては、半導体と裏面電極との間に厚さ５〜
３００人、好ましくは７〜１００人のシリサイド層が設
けられている。該シリサイド層の厚さが５人未満になる
と、均一で品質のよい層がえられなくなったり、裏面電
極を形成する金属の半導体中への熱による拡散を充分防
止することができなくなったりする傾向が生ずる。In the present invention, the thickness between the semiconductor and the back electrode is 5 to 5.
A silicide layer of 300, preferably 7 to 100, is provided. When the thickness of the silicide layer is less than 5 layers, it becomes impossible to obtain a uniform and high-quality layer, and it tends to become impossible to sufficiently prevent the metal forming the back electrode from diffusing into the semiconductor due to heat. occurs.
また層の厚さが３００人をこえると、該層が存在するた
めに直列電気抵抗が増したり、光の吸収が増し、裏面電
極面での反射光が少なくなったり、シリサイド層の形成
に時間がかかったりするという問題が生ずる傾向にある
。Furthermore, if the thickness of the layer exceeds 300 layers, the presence of the layer increases the series electrical resistance, increases the absorption of light, reduces the amount of light reflected on the back electrode surface, and takes time to form the silicide layer. There is a tendency for problems such as problems such as
シリサイド層の厚さは蒸着時の撮動子モニター値を用い
て測定してもよいし、ＳＩＭＳなどの表面分析から求め
た厚さの検量線を利用して測定してもよい。The thickness of the silicide layer may be measured using a sensor monitor value during vapor deposition, or may be measured using a thickness calibration curve obtained from surface analysis such as SIMS.
つぎに本発明の耐熱性薄膜光電変換素子の製法を、光入
射側から順にｐ型、ｉ型、ｎ型の半導体を設けた太陽電
池を例にとり説明する。Next, a method for manufacturing a heat-resistant thin film photoelectric conversion element of the present invention will be explained using as an example a solar cell in which p-type, i-type, and n-type semiconductors are provided in order from the light incident side.
なお本明細書にいうＦ４ｍ光電変換素子とは、厚さ１０
２〜１０６人程度の半導体層、好ましくは０．０２〜１
００虜の非晶質半導体層を含む、たとえば太陽電池、光
検出素子、光電面ドラム、レーザー、エレクトロルミネ
ッセンス素子などで代表される光電変換素子を意味する
。Note that the F4m photoelectric conversion element referred to in this specification refers to a thickness of 10
2 to 106 semiconductor layers, preferably 0.02 to 1
It refers to a photoelectric conversion element, such as a solar cell, a photodetector, a photocathode drum, a laser, an electroluminescent element, etc., which contains an amorphous semiconductor layer.
まず透明電極を設けた透明基板上に、常法により非晶質
のｐ層、１層、ｎ層を形成し、そののちシリサイドター
ゲットを用いてスパッター法により所定の厚さにシリサ
イド層を形成する。First, amorphous p-layer, 1-layer, and n-layer are formed by a conventional method on a transparent substrate provided with a transparent electrode, and then a silicide layer is formed to a predetermined thickness by sputtering using a silicide target. .
シリサイドターゲットのかわりにシリコンとシリサイド
形成金属とのロスバッターを行ないシリサイド層を形成
してもよい。もちろんシリサイド層の形成を電子ビーム
法で行なってもよい。Instead of using a silicide target, a silicide layer may be formed by performing loss battering between silicon and a silicide forming metal. Of course, the silicide layer may be formed by an electron beam method.
そののち裏面電極を常法により堆積させることにより、
本発明の耐熱性Ｎｉｌ光電変換素子がえられる。After that, by depositing the back electrode by a conventional method,
A heat-resistant Nil photoelectric conversion element of the present invention can be obtained.
上記説明ではｐｉｎ型太１１ｉＴ！１池について説明し
たが、ショットキ型やｐｎ型の太陽電池あるいは他の光
電変換素子についても同様である。また太陽電池はへテ
ロ接合の太陽電池であってもよく、ホモ接合の太陽電池
であってもよい。In the above explanation, the pin type is 11iT! Although the description has been made for one cell, the same applies to Schottky type or pn type solar cells or other photoelectric conversion elements. Further, the solar cell may be a heterojunction solar cell or a homojunction solar cell.
このようにして作製された本発明の耐熱性薄膜光電変換
素子は、このままでも加熱による光電変換素子特性の低
下が少なく良好な特性を有するものであるが、さらに１
８０℃〜成膜温度（１８０〜４００℃程度）で０．５〜
４時間時間熱処理すると、シリサイド層と半導体および
シリサイド層と電極との接触をよくすることができ、そ
の界面の直列抵抗を減少させることができる。The heat-resistant thin film photoelectric conversion device of the present invention thus produced has good properties with little deterioration in photoelectric conversion device characteristics due to heating even as it is;
0.5 to 80℃ to film formation temperature (approximately 180 to 400℃)
Heat treatment for 4 hours can improve the contact between the silicide layer and the semiconductor and the silicide layer and the electrode, and can reduce the series resistance at the interface.
このようにして製造される本発明の耐熱性基、膜光電変
換素子は、たとえば５０℃以上゛のような高温で使用さ
れる、あるいは使用中に５０℃以上になることがあるよ
うな用途に使用される太陽電池や光検出素子などとして
好適に使用される。The heat-resistant group/film photoelectric conversion device of the present invention produced in this way can be used at high temperatures of 50°C or higher, or for applications where the temperature may reach 50°C or higher during use. It is suitably used as a solar cell, a photodetector element, etc.
とくに屋外に設置され、使用温度が８０℃にもなる太陽
電池に用いたばあいに、本発明の効果が大きく発揮され
る。またシリサイド層が薄いため、長波長光の裏面電極
面での反射ロスが極めて少ない。The effects of the present invention are particularly effective when used in solar cells that are installed outdoors and have operating temperatures of as much as 80°C. Furthermore, since the silicide layer is thin, there is extremely little reflection loss of long-wavelength light on the back electrode surface.
つぎに本発明の耐熱性薄膜光電変換素子を実施例にもと
づき説明する。Next, the heat-resistant thin film photoelectric conversion element of the present invention will be explained based on Examples.
実施例１
厚さ１０００人のＩＴＯ／ ＳｎＯ□透明電極を設けた
厚さ１＃ｌの青板ガラス基板上に、基板温度約２００℃
、圧力的Ｉ Ｔｏｒｒにて、Ｓ！Ｈａ 、ＣＨａ、Ｂ２
Ｈ６からなる混合ガス、５ｉＨａ、Ｈ２からなる混合ガ
ス、５ｉＨａ 、ＰＨ３からなる混合ガスをこの順に用
いて、グロー放電分解法にてそれぞれアモルファスタイ
プのｐ層を１２０人、ｉ層を５０００人、ｎＷＩを３０
０人の厚さになるように堆積させた。Example 1 A substrate temperature of about 200°C was placed on a 1#l thick blue plate glass substrate on which a 1000-thick ITO/SnO□ transparent electrode was provided.
, at pressure I Torr, S! Ha, CHa, B2
Using a mixed gas consisting of H6, 5iHa, a mixed gas consisting of H2, 5iHa, and PH3 in this order, an amorphous type p-layer was formed by 120 people, an i-layer by 5000 people, and nWI using the glow discharge decomposition method. 30
It was deposited to a thickness of 0.
そののち、モリブデン含有率１５ａｔｍ％のモリブデン
シリサイドターゲットをスパッターし、厚さが３０人に
なるようにｎ層上に堆積させたのち、つづいてＡＱを１
０００人の厚さに電子ビーム法で堆積させた。ついで２
００℃で２時間熱処理して太陽電池をえた。After that, a molybdenum silicide target with a molybdenum content of 15 atm% was sputtered and deposited on the n layer to a thickness of 30 mm, and then AQ was 15 atm%.
The film was deposited to a thickness of 1,000 mm using an electron beam method. Then 2
A solar cell was obtained by heat treatment at 00°C for 2 hours.
えられた太陽電池のｐ層、１層、ｎ層、モリブデンシリ
サイド層およびＡ（Ｉｌｌはそれぞれ１２０人、５００
０人、３００人、３０人、１０００人の厚さであった。The p-layer, 1-layer, n-layer, molybdenum silicide layer and A (Ill are 120 and 500 layers, respectively) of the obtained solar cell.
The thickness was 0, 300, 30, and 1000.
えられた太陽電池の特性および２３０℃で６時間加熱し
たのちの特性をＡＨ−１，１０ｈ＋１４／１：１！のソ
ーラーシミュレーターを用いて測定した。その結果を第
１表に示す。The characteristics of the obtained solar cell and the characteristics after heating at 230°C for 6 hours are AH-1, 10h+14/1:1! Measured using a solar simulator. The results are shown in Table 1.
実施例２
２００℃で２時間熱処理しなかったほかは実施例１と同
様にして太陽電池を作製し、えられた太陽電池の特性を
測定した。その結果を第１表に示す。Example 2 A solar cell was produced in the same manner as in Example 1, except that the heat treatment at 200° C. for 2 hours was not performed, and the characteristics of the obtained solar cell were measured. The results are shown in Table 1.
比較例１
モリブデンシリサイド層を設けなかったほかは実施例１
と同様にして太陽電池を作製し、えられた太陽電池の特
性および２３０℃で６時間加熱したのちの特性を測定し
た。その結果を第１表に示す。Comparative example 1 Example 1 except that no molybdenum silicide layer was provided
A solar cell was produced in the same manner as above, and the characteristics of the obtained solar cell and the characteristics after heating at 230° C. for 6 hours were measured. The results are shown in Table 1.
［発明の効果］
以上説明したように、薄膜光電変゛換素子を製造するば
あいに、半導体と裏面電極との間に薄いシリサイド層を
設けることにより、簿膜光電変換素子を高温で使用した
ばあいにも、裏面電極を構成する金属成分や入光側の電
極を構成する金属化合物成分が半導体中に拡散すること
を防ぎ、薄膜光電変換素子の低下を少なくすることがで
きる。さらにシリサイド層を５〜３００人、好ましくは
７〜１００人というように薄く形成するため、太陽電池
のばあいには長波長光の裏面反射光を充分利用できるな
どの効果が生ずる。[Effects of the Invention] As explained above, when manufacturing a thin film photoelectric conversion element, by providing a thin silicide layer between the semiconductor and the back electrode, it is possible to use the thin film photoelectric conversion element at high temperatures. Even in such cases, it is possible to prevent the metal component constituting the back electrode and the metal compound component constituting the light incident side electrode from diffusing into the semiconductor, thereby reducing deterioration of the thin film photoelectric conversion element. Furthermore, since the silicide layer is formed as thin as 5 to 300 layers, preferably 7 to 100 layers, effects such as the ability to fully utilize the back-reflected light of long wavelength light are produced in the case of solar cells.
また半導体−シリサイド層−電極を積層させたのち１８
０℃〜成膜温度で０．５〜４時間熱処理することにより
、えられる耐熱性薄膜光電変換素子特性（とくに太陽電
池特性のうちの短絡電流およびフィルファクター）をさ
らに改良することができる。In addition, after laminating the semiconductor-silicide layer-electrode, 18
By heat-treating at a temperature of 0° C. to film-forming temperature for 0.5 to 4 hours, the properties of the resulting heat-resistant thin film photoelectric conversion element (particularly the short-circuit current and fill factor of the solar cell properties) can be further improved.
Claims (1)
層を設けたことを特徴とする耐熱性薄膜光電変換素子。 ２ 前記シリサイド層の厚さが５〜３００Åである特許
請求の範囲第１項記載の耐熱性薄膜光電変換素子。 ３ 前記シリサイド層の厚さが７〜１００Åである特許
請求の範囲第１項記載の耐熱性薄膜光電変換素子。 ４ 半導体が厚さ０．０２〜１００μｍの非晶質薄膜で
ある特許請求の範囲第１項記載の耐熱性薄膜光電変換素
子。 ５ 半導体と電極との間にシリサイド層を設けた耐熱性
薄膜光電変換素子を製造する際に、半導体−シリサイド
層−電極からなる層を形成したのち、１８０℃〜成膜温
度で０．５〜４時間熱処理することを特徴とする耐熱性
薄膜光電変換素子の製法。[Scope of Claims] 1. A heat-resistant thin film photoelectric conversion element characterized in that a silicide layer is provided between a semiconductor and at least one electrode. 2. The heat-resistant thin film photoelectric conversion element according to claim 1, wherein the silicide layer has a thickness of 5 to 300 Å. 3. The heat-resistant thin film photoelectric conversion element according to claim 1, wherein the silicide layer has a thickness of 7 to 100 Å. 4. The heat-resistant thin film photoelectric conversion element according to claim 1, wherein the semiconductor is an amorphous thin film with a thickness of 0.02 to 100 μm. 5. When manufacturing a heat-resistant thin film photoelectric conversion element in which a silicide layer is provided between a semiconductor and an electrode, after forming a layer consisting of a semiconductor, a silicide layer, and an electrode, a film formation temperature of 0.5 to 180° C. A method for producing a heat-resistant thin film photoelectric conversion element, characterized by heat treatment for 4 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60124789A JPH088368B2 (en) | 1985-06-07 | 1985-06-07 | Manufacturing method of heat-resistant thin film photoelectric conversion element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60124789A JPH088368B2 (en) | 1985-06-07 | 1985-06-07 | Manufacturing method of heat-resistant thin film photoelectric conversion element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61283174A true JPS61283174A (en) | 1986-12-13 |
| JPH088368B2 JPH088368B2 (en) | 1996-01-29 |
Family
ID=14894159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60124789A Expired - Lifetime JPH088368B2 (en) | 1985-06-07 | 1985-06-07 | Manufacturing method of heat-resistant thin film photoelectric conversion element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH088368B2 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52141565A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor unit |
| JPS5471564A (en) * | 1977-11-17 | 1979-06-08 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
| JPS5735318A (en) * | 1980-08-12 | 1982-02-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS59147469A (en) * | 1983-02-14 | 1984-08-23 | Hitachi Ltd | Amorphous silicon solar cell |
| JPS59177974A (en) * | 1983-03-28 | 1984-10-08 | Nippon Denso Co Ltd | Amorphous silicon group semiconductor element |
-
1985
- 1985-06-07 JP JP60124789A patent/JPH088368B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52141565A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor unit |
| JPS5471564A (en) * | 1977-11-17 | 1979-06-08 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
| JPS5735318A (en) * | 1980-08-12 | 1982-02-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS59147469A (en) * | 1983-02-14 | 1984-08-23 | Hitachi Ltd | Amorphous silicon solar cell |
| JPS59177974A (en) * | 1983-03-28 | 1984-10-08 | Nippon Denso Co Ltd | Amorphous silicon group semiconductor element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH088368B2 (en) | 1996-01-29 |
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