JPS61144083A - ジヨセフソン接合素子の形成方法 - Google Patents
ジヨセフソン接合素子の形成方法Info
- Publication number
- JPS61144083A JPS61144083A JP59265455A JP26545584A JPS61144083A JP S61144083 A JPS61144083 A JP S61144083A JP 59265455 A JP59265455 A JP 59265455A JP 26545584 A JP26545584 A JP 26545584A JP S61144083 A JPS61144083 A JP S61144083A
- Authority
- JP
- Japan
- Prior art keywords
- superconductor electrode
- superconductor
- tunnel barrier
- electrode
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000002887 superconductor Substances 0.000 claims abstract description 46
- 230000004888 barrier function Effects 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000004020 conductor Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 abstract description 4
- 238000011161 development Methods 0.000 abstract description 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 19
- 239000010955 niobium Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59265455A JPS61144083A (ja) | 1984-12-18 | 1984-12-18 | ジヨセフソン接合素子の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59265455A JPS61144083A (ja) | 1984-12-18 | 1984-12-18 | ジヨセフソン接合素子の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61144083A true JPS61144083A (ja) | 1986-07-01 |
| JPH0234195B2 JPH0234195B2 (enrdf_load_stackoverflow) | 1990-08-01 |
Family
ID=17417401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59265455A Granted JPS61144083A (ja) | 1984-12-18 | 1984-12-18 | ジヨセフソン接合素子の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61144083A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62183576A (ja) * | 1986-02-08 | 1987-08-11 | Agency Of Ind Science & Technol | ジヨセフソン素子の製造方法 |
| JPH0379093A (ja) * | 1989-08-23 | 1991-04-04 | Hitachi Ltd | ジョセフソン集積回路 |
| JPH06177442A (ja) * | 1992-12-01 | 1994-06-24 | Agency Of Ind Science & Technol | ジョセフソン接合の作製方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58175830A (ja) * | 1982-04-08 | 1983-10-15 | Matsushita Electric Ind Co Ltd | パタ−ン形成方法 |
| JPS58200586A (ja) * | 1982-05-10 | 1983-11-22 | ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン | ニオブ−絶縁体−ニオブのジヨセフソンのトンネル接合デバイスのその場製造の方法 |
-
1984
- 1984-12-18 JP JP59265455A patent/JPS61144083A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58175830A (ja) * | 1982-04-08 | 1983-10-15 | Matsushita Electric Ind Co Ltd | パタ−ン形成方法 |
| JPS58200586A (ja) * | 1982-05-10 | 1983-11-22 | ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン | ニオブ−絶縁体−ニオブのジヨセフソンのトンネル接合デバイスのその場製造の方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62183576A (ja) * | 1986-02-08 | 1987-08-11 | Agency Of Ind Science & Technol | ジヨセフソン素子の製造方法 |
| JPH0379093A (ja) * | 1989-08-23 | 1991-04-04 | Hitachi Ltd | ジョセフソン集積回路 |
| JPH06177442A (ja) * | 1992-12-01 | 1994-06-24 | Agency Of Ind Science & Technol | ジョセフソン接合の作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0234195B2 (enrdf_load_stackoverflow) | 1990-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |