JPS61140942A - リソグラフイ−用マスク構造体 - Google Patents
リソグラフイ−用マスク構造体Info
- Publication number
- JPS61140942A JPS61140942A JP59261838A JP26183884A JPS61140942A JP S61140942 A JPS61140942 A JP S61140942A JP 59261838 A JP59261838 A JP 59261838A JP 26183884 A JP26183884 A JP 26183884A JP S61140942 A JPS61140942 A JP S61140942A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- lithography
- holder
- ray
- aluminum nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59261838A JPS61140942A (ja) | 1984-12-13 | 1984-12-13 | リソグラフイ−用マスク構造体 |
US06/794,180 US4677042A (en) | 1984-11-05 | 1985-11-01 | Mask structure for lithography, method for preparation thereof and lithographic method |
DE19853539201 DE3539201A1 (de) | 1984-11-05 | 1985-11-05 | Maskenstruktur fuer die lithografie, verfahren zu ihrer herstellung und lithografieverfahren |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59261838A JPS61140942A (ja) | 1984-12-13 | 1984-12-13 | リソグラフイ−用マスク構造体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61140942A true JPS61140942A (ja) | 1986-06-28 |
JPH0481856B2 JPH0481856B2 (enrdf_load_stackoverflow) | 1992-12-25 |
Family
ID=17367442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59261838A Granted JPS61140942A (ja) | 1984-11-05 | 1984-12-13 | リソグラフイ−用マスク構造体 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61140942A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6249623A (ja) * | 1985-07-19 | 1987-03-04 | Nec Corp | X線露光マスク |
JPH01304396A (ja) * | 1988-05-31 | 1989-12-07 | Nissin Electric Co Ltd | X線露光用マスク素材の製造方法 |
JPH0316116A (ja) * | 1989-03-09 | 1991-01-24 | Canon Inc | X線リソグラフィー用マスク構造体及びそれを用いたx線露光方法 |
-
1984
- 1984-12-13 JP JP59261838A patent/JPS61140942A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6249623A (ja) * | 1985-07-19 | 1987-03-04 | Nec Corp | X線露光マスク |
JPH01304396A (ja) * | 1988-05-31 | 1989-12-07 | Nissin Electric Co Ltd | X線露光用マスク素材の製造方法 |
JPH0316116A (ja) * | 1989-03-09 | 1991-01-24 | Canon Inc | X線リソグラフィー用マスク構造体及びそれを用いたx線露光方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0481856B2 (enrdf_load_stackoverflow) | 1992-12-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4677042A (en) | Mask structure for lithography, method for preparation thereof and lithographic method | |
US4837123A (en) | Mask structure for lithography, method of preparation thereof and lithographic method | |
JPS61140942A (ja) | リソグラフイ−用マスク構造体 | |
US5882826A (en) | Membrane and mask, and exposure apparatus using the mask, and device producing method using the mask | |
JPS61249056A (ja) | リソグラフイ−用マスク構造体 | |
JPS61117545A (ja) | X線リソグラフイ−法及びx線リソグラフイ−用マスク保持体 | |
JPH0481855B2 (enrdf_load_stackoverflow) | ||
JPS6068336A (ja) | リソグラフィー用マスク構造体 | |
JPH0690998B2 (ja) | X線リソグラフィー用マスク構造体の製造方法 | |
JPS6068339A (ja) | リソグラフィ−用マスク構造体 | |
JPS61118754A (ja) | X線リソグラフイ−法及びx線リソグラフイ−用マスク保持体 | |
JPS61121055A (ja) | X線リソグラフイ−法及びx線リソグラフイ−用マスク保持体 | |
JPS61134764A (ja) | リソグラフイ−用マスク構造体 | |
JPH0482049B2 (enrdf_load_stackoverflow) | ||
JPS61110139A (ja) | X線リソグラフイ−法及びx線リソグラフイ−用マスク保持体 | |
JP2962049B2 (ja) | X線マスク | |
JPS62108522A (ja) | リソグラフィー用マスク構造体の製造方法、及び薄膜の製造方法 | |
JPS6045419B2 (ja) | 軟x線リソグラフイ−用マスクおよびその製造法 | |
JPH053131B2 (enrdf_load_stackoverflow) | ||
JPH0482047B2 (enrdf_load_stackoverflow) | ||
JPS61134765A (ja) | リソグラフイ−用マスク構造体 | |
JPH0294427A (ja) | X線マスク構造体 | |
JPS6068337A (ja) | X線リソグラフィ−用マスクの作成方法 | |
JPS6118953A (ja) | X線リソグラフイ−用マスク構造体 | |
JPS61255346A (ja) | X線露光用マスク |