JPH053131B2 - - Google Patents
Info
- Publication number
- JPH053131B2 JPH053131B2 JP13887884A JP13887884A JPH053131B2 JP H053131 B2 JPH053131 B2 JP H053131B2 JP 13887884 A JP13887884 A JP 13887884A JP 13887884 A JP13887884 A JP 13887884A JP H053131 B2 JPH053131 B2 JP H053131B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- ray
- adhesive
- membrane
- holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 21
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 238000001015 X-ray lithography Methods 0.000 claims description 13
- 239000012528 membrane Substances 0.000 claims description 11
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 229910000830 fernico Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59138878A JPS6118957A (ja) | 1984-07-06 | 1984-07-06 | Ｘ線リソグラフイ−用マスクの作成方法 |
| DE3524196A DE3524196C3 (de) | 1984-07-06 | 1985-07-05 | Lithografiemaske |
| US07/150,494 US4804600A (en) | 1984-07-06 | 1988-02-01 | Lithographic mask structure and process for preparing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59138878A JPS6118957A (ja) | 1984-07-06 | 1984-07-06 | Ｘ線リソグラフイ−用マスクの作成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6118957A JPS6118957A (ja) | 1986-01-27 |
| JPH053131B2 true JPH053131B2 (enrdf_load_stackoverflow) | 1993-01-14 |
Family
ID=15232221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59138878A Granted JPS6118957A (ja) | 1984-07-06 | 1984-07-06 | Ｘ線リソグラフイ−用マスクの作成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6118957A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0795512B2 (ja) * | 1987-05-14 | 1995-10-11 | 沖電気工業株式会社 | Ｘ線露光マスク用メンブレンの製造方法 |
-
1984
- 1984-07-06 JP JP59138878A patent/JPS6118957A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6118957A (ja) | 1986-01-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6746819B1 (en) | Use of polyimide for adhesive layers, lithographic method for producing microcomponents and method for producing composite material | |
| US4677042A (en) | Mask structure for lithography, method for preparation thereof and lithographic method | |
| US4804600A (en) | Lithographic mask structure and process for preparing the same | |
| US4254174A (en) | Supported membrane composite structure and its method of manufacture | |
| US6180292B1 (en) | Structure and manufacture of X-ray mask pellicle with washer-shaped member | |
| US4837123A (en) | Mask structure for lithography, method of preparation thereof and lithographic method | |
| US4170512A (en) | Method of manufacture of a soft-X-ray mask | |
| CA1261193A (en) | Process for the production of an x-ray mask with a metal carrier foil | |
| CN111115564A (zh) | 一种干法转印光刻胶制备微纳结构的方法 | |
| JPH053131B2 (enrdf_load_stackoverflow) | ||
| JPS60220933A (ja) | Ｘ線露光マスク及びその製造方法 | |
| JPH0362927A (ja) | 半導体装置およびその製造方法 | |
| JP3638440B2 (ja) | Ｘ線マスクおよびこの製造方法 | |
| JPH0563933B2 (enrdf_load_stackoverflow) | ||
| JPH0481855B2 (enrdf_load_stackoverflow) | ||
| JPS61140942A (ja) | リソグラフイ−用マスク構造体 | |
| JPH0563932B2 (enrdf_load_stackoverflow) | ||
| JP2005157223A (ja) | レチクルおよび半導体装置の製造方法 | |
| JP4402568B2 (ja) | Ｘ線マスクおよびこの製造方法 | |
| US6921630B2 (en) | Photoresist substrate having robust adhesion | |
| JP4402730B2 (ja) | Ｘ線マスクおよびこの製造方法 | |
| JPH0212808A (ja) | Ｘ線リソグラフィー用マスクの作成方法 | |
| JPS6068337A (ja) | Ｘ線リソグラフィ−用マスクの作成方法 | |
| JPS6068338A (ja) | Ｘ線リソグラフィ−用マスクの作成方法 | |
| JPH03259509A (ja) | 放射線露光用マスク構造体 |