JPS61137388A - 半導体レ−ザ - Google Patents
半導体レ−ザInfo
- Publication number
- JPS61137388A JPS61137388A JP26026584A JP26026584A JPS61137388A JP S61137388 A JPS61137388 A JP S61137388A JP 26026584 A JP26026584 A JP 26026584A JP 26026584 A JP26026584 A JP 26026584A JP S61137388 A JPS61137388 A JP S61137388A
- Authority
- JP
- Japan
- Prior art keywords
- wavelength
- layer
- film
- semiconductor
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000005253 cladding Methods 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 238000002310 reflectometry Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 20
- 230000000694 effects Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26026584A JPS61137388A (ja) | 1984-12-10 | 1984-12-10 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26026584A JPS61137388A (ja) | 1984-12-10 | 1984-12-10 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61137388A true JPS61137388A (ja) | 1986-06-25 |
| JPH0147031B2 JPH0147031B2 (enrdf_load_stackoverflow) | 1989-10-12 |
Family
ID=17345647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26026584A Granted JPS61137388A (ja) | 1984-12-10 | 1984-12-10 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61137388A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63124592A (ja) * | 1986-11-14 | 1988-05-28 | Nec Corp | 半導体レ−ザ装置 |
| JPS63229892A (ja) * | 1987-03-19 | 1988-09-26 | Sanyo Electric Co Ltd | 半導体レ−ザ |
| DE3728566A1 (de) * | 1987-08-27 | 1989-03-09 | Telefunken Electronic Gmbh | Optoelektronisches halbleiterbauelement |
| US5244749A (en) * | 1992-08-03 | 1993-09-14 | At&T Bell Laboratories | Article comprising an epitaxial multilayer mirror |
| US6717231B2 (en) | 1999-01-11 | 2004-04-06 | Samsung Electronics Co., Ltd. | Trench isolation regions having recess-inhibiting layers therein that protect against overetching |
| EP1766739A4 (en) * | 2004-06-30 | 2010-01-27 | Finisar Corp | SEMICONDUCTOR LASER WITH SIDE MODE SUPPRESSION |
-
1984
- 1984-12-10 JP JP26026584A patent/JPS61137388A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63124592A (ja) * | 1986-11-14 | 1988-05-28 | Nec Corp | 半導体レ−ザ装置 |
| JPS63229892A (ja) * | 1987-03-19 | 1988-09-26 | Sanyo Electric Co Ltd | 半導体レ−ザ |
| DE3728566A1 (de) * | 1987-08-27 | 1989-03-09 | Telefunken Electronic Gmbh | Optoelektronisches halbleiterbauelement |
| US5244749A (en) * | 1992-08-03 | 1993-09-14 | At&T Bell Laboratories | Article comprising an epitaxial multilayer mirror |
| US6717231B2 (en) | 1999-01-11 | 2004-04-06 | Samsung Electronics Co., Ltd. | Trench isolation regions having recess-inhibiting layers therein that protect against overetching |
| EP1766739A4 (en) * | 2004-06-30 | 2010-01-27 | Finisar Corp | SEMICONDUCTOR LASER WITH SIDE MODE SUPPRESSION |
| US7711016B2 (en) | 2004-06-30 | 2010-05-04 | Finisar Corporation | Semiconductor laser with side mode suppression |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0147031B2 (enrdf_load_stackoverflow) | 1989-10-12 |
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