JPH0230195B2 - - Google Patents

Info

Publication number
JPH0230195B2
JPH0230195B2 JP60012181A JP1218185A JPH0230195B2 JP H0230195 B2 JPH0230195 B2 JP H0230195B2 JP 60012181 A JP60012181 A JP 60012181A JP 1218185 A JP1218185 A JP 1218185A JP H0230195 B2 JPH0230195 B2 JP H0230195B2
Authority
JP
Japan
Prior art keywords
layer
waveguide
active
waveguide layer
active waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60012181A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61171190A (ja
Inventor
Yasuharu Suematsu
Shigehisa Arai
Juichi Tomori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shingijutsu Kaihatsu Jigyodan
Original Assignee
Shingijutsu Kaihatsu Jigyodan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shingijutsu Kaihatsu Jigyodan filed Critical Shingijutsu Kaihatsu Jigyodan
Priority to JP60012181A priority Critical patent/JPS61171190A/ja
Publication of JPS61171190A publication Critical patent/JPS61171190A/ja
Publication of JPH0230195B2 publication Critical patent/JPH0230195B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP60012181A 1985-01-25 1985-01-25 分布反射形レ−ザ Granted JPS61171190A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60012181A JPS61171190A (ja) 1985-01-25 1985-01-25 分布反射形レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60012181A JPS61171190A (ja) 1985-01-25 1985-01-25 分布反射形レ−ザ

Publications (2)

Publication Number Publication Date
JPS61171190A JPS61171190A (ja) 1986-08-01
JPH0230195B2 true JPH0230195B2 (enrdf_load_stackoverflow) 1990-07-04

Family

ID=11798249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60012181A Granted JPS61171190A (ja) 1985-01-25 1985-01-25 分布反射形レ−ザ

Country Status (1)

Country Link
JP (1) JPS61171190A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6461081A (en) * 1987-09-01 1989-03-08 Japan Res Dev Corp Distributed-feedback type semiconductor laser and manufacture thereof
JP3142333B2 (ja) * 1991-12-17 2001-03-07 株式会社東芝 分布帰還型半導体レ−ザ及びその駆動方法
JP5287460B2 (ja) * 2009-04-17 2013-09-11 富士通株式会社 半導体レーザ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53144693A (en) * 1977-05-23 1978-12-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser
JPS5878792A (ja) * 1981-11-05 1983-05-12 Sumitomo Chem Co Ltd 記録紙

Also Published As

Publication number Publication date
JPS61171190A (ja) 1986-08-01

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Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term