JPS6113383B2 - - Google Patents
Info
- Publication number
- JPS6113383B2 JPS6113383B2 JP367481A JP367481A JPS6113383B2 JP S6113383 B2 JPS6113383 B2 JP S6113383B2 JP 367481 A JP367481 A JP 367481A JP 367481 A JP367481 A JP 367481A JP S6113383 B2 JPS6113383 B2 JP S6113383B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- semiconductor
- semiconductor device
- insulating film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 9
- 238000005192 partition Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 230000005669 field effect Effects 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000001947 vapour-phase growth Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP367481A JPS56158455A (en) | 1981-01-12 | 1981-01-12 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP367481A JPS56158455A (en) | 1981-01-12 | 1981-01-12 | Semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1437772A Division JPS5513137B2 (en, 2012) | 1972-02-10 | 1972-02-10 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12934585A Division JPS6163041A (ja) | 1985-06-14 | 1985-06-14 | 半導体装置の製造方法 |
| JP60129346A Division JPS6163061A (ja) | 1985-06-14 | 1985-06-14 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56158455A JPS56158455A (en) | 1981-12-07 |
| JPS6113383B2 true JPS6113383B2 (en, 2012) | 1986-04-12 |
Family
ID=11563963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP367481A Granted JPS56158455A (en) | 1981-01-12 | 1981-01-12 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56158455A (en, 2012) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR920004366B1 (ko) * | 1989-09-08 | 1992-06-04 | 현대전자산업 주식회사 | 반도체 장치의 자기 정렬 콘택 제조방법 |
| JPH065570U (ja) * | 1991-12-06 | 1994-01-25 | 株式会社セラミツク藍 | 脚付きグラス |
-
1981
- 1981-01-12 JP JP367481A patent/JPS56158455A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56158455A (en) | 1981-12-07 |
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