JPS61133633A - Wet scrubber of semiconductor wafer - Google Patents
Wet scrubber of semiconductor waferInfo
- Publication number
- JPS61133633A JPS61133633A JP25594784A JP25594784A JPS61133633A JP S61133633 A JPS61133633 A JP S61133633A JP 25594784 A JP25594784 A JP 25594784A JP 25594784 A JP25594784 A JP 25594784A JP S61133633 A JPS61133633 A JP S61133633A
- Authority
- JP
- Japan
- Prior art keywords
- chemical
- tank
- bath
- chemical solution
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、製造処理工程で汚染した半導体ウェーハを
薬液及び純水で洗浄するようにした、半導体ウェーハの
洗浄装置に関する０
〔従来の技術〕
従来の製造工程における半導体ウェーハ（以下「ウェー
ハ」と称する）の洗浄装置は、第２図に構成図で示すよ
うになっていた。（１）及び（２）は薬液槽で、ウェー
ハに付着している処理液や異物を除去するための薬液が
ためられている０（３）及び（４）は薬液槽（１）及び
（２）に順に浸漬処理されたウェーハを純水で洗浄する
洗浄槽、（５）は洗浄？１（４）からのウェーハに純水
を噴射後、遠心脱水乾燥するすすぎ乾燥機である。（６
）は薬液の供給管、（７）は弁、（８）は汚れた薬液の
排出管、（９）は弁、α〔は薬液槽１１） 、 ＋２）
に供給された薬液を洗浄効率のよいように８０°〜１５
０℃に加熱するヒータである。[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a semiconductor wafer cleaning device that cleans semiconductor wafers contaminated during a manufacturing process using a chemical solution and pure water. [Prior Art] A cleaning apparatus for semiconductor wafers (hereinafter referred to as "wafers") in a conventional manufacturing process is shown in a block diagram in FIG. (1) and (2) are chemical solution tanks, and 0 (3) and (4) are chemical solution tanks (1) and (2) that store chemical solutions for removing processing liquid and foreign matter adhering to wafers. ) is a cleaning tank in which the wafers that have been immersed are washed with pure water in order, and (5) is a cleaning tank? This is a rinsing dryer that sprays pure water onto the wafers from 1 (4) and then centrifugally dehydrates and dries them. (6
) is the chemical supply pipe, (7) is the valve, (8) is the dirty chemical discharge pipe, (9) is the valve, α [is the chemical tank 11), +2)
80° to 15° to improve cleaning efficiency.
This is a heater that heats the temperature to 0°C.
上記従来装置において、カセットに収容した多数枚のウ
ェーハ（図示は略す）を、薬液槽（１） 、 （２）の
高温の薬液に順次浸漬し、つづいて、水洗槽（３）。In the conventional apparatus described above, a large number of wafers (not shown) housed in a cassette are sequentially immersed in high-temperature chemical solutions in chemical baths (1) and (2), and then immersed in a rinsing bath (3).
（４）に順次入れられ、純水で洗われる。次にウェーハ
はすすぎ乾燥機（５）Ｋ入れられ、純水の噴射を受けて
から遠心脱水乾燥される。(4) and washed with pure water. Next, the wafer is placed in a rinse dryer (5)K, where it is sprayed with pure water and centrifugally dehydrated and dried.
薬液槽１１） 、 ＋２）でのウェーハの浸漬処理で、
ウェーハの持込みなどによる異物が薬液中に増加し、ウ
ェーハの洗浄能力が低下するので、数十サイクルの浸漬
使用後、ウェーハの浸漬処理を中断し、薬液の加熱をや
め、温度が５０″Ｃ以下になるのを待って排出していた
。つづいて、新薬液を供給管（６）により空の薬液槽（
１）又は（２）に供給し、ヒータ（Ｉｎで薬液を８０〜
１５０°Ｃに加熱し、処理を再開し、とのような操作を
繰返していた。In the wafer immersion process in the chemical bath 11), +2),
Foreign matter due to wafers brought in increases in the chemical solution, reducing the wafer cleaning ability, so after several dozen cycles of immersion, the wafer immersion process is interrupted, heating of the chemical solution is stopped, and the temperature is below 50"C. Then, the new chemical solution was poured into the empty chemical tank (6) using the supply pipe (6).
1) or (2), and the heater (In)
The process was repeated by heating to 150°C and restarting the process.
〔発明が解決しようとする問題点〕
上記のような従来のウェーハの洗浄装置では、使用薬液
に汚れがでてきても、温度が高くて使用中に薬液を循環
ろ過することはできなかった。このため、薬液が汚れた
薬液槽（１）又は（２）のウェーハの浸漬を中止し、薬
液の６温度低下をまち排出しなければならず、生産性を
低下させていた。また、排出薬液の処理が面倒であり、
排出量が多いことは好ましくなかった。このため、薬液
をできるだけ長く使用し、処理サイクル数を増加すると
、薬液中の異物量が増加し、処理されたウェーハに異物
が付着し、パターン欠陥や薄酸化膜の絶縁特性の低下な
ど悪影響を及ぼすという問題点があった。[Problems to be Solved by the Invention] In the conventional wafer cleaning apparatus as described above, even if the chemical solution used becomes dirty, the chemical solution cannot be circulated and filtered during use due to the high temperature. For this reason, it is necessary to stop dipping the wafer in the chemical tank (1) or (2) contaminated with the chemical solution, and drain the chemical solution immediately after the temperature drops, reducing productivity. In addition, it is troublesome to dispose of the discharged chemical solution.
A large amount of emissions was not desirable. Therefore, if the chemical solution is used for as long as possible and the number of processing cycles is increased, the amount of foreign matter in the chemical solution will increase, and the foreign matter will adhere to the processed wafer, causing negative effects such as pattern defects and a decrease in the insulation properties of the thin oxide film. There was a problem with the effect of
この発明は、このような問題点を解決するためになされ
たもので、薬液槽の薬液が所定浸漬サイクル数を終えて
も再使用ができ、ウェーハの薬液槽への浸漬処理の中止
をなくして生産性を向上し、薬液の使用量が低減され、
排出薬液量を減少できるウェーハ洗浄装置を得ることを
目的としている。This invention was made to solve these problems, and it is possible to reuse the chemical solution in the chemical bath even after a predetermined number of immersion cycles, thereby eliminating the need to stop the wafer immersion process in the chemical bath. Improved productivity, reduced chemical usage,
The objective is to obtain a wafer cleaning device that can reduce the amount of discharged chemical liquid.
この発明にかかるウェーハの洗浄装置は、常用の薬液槽
の外に予備として交代の薬液槽を設は薬液を入れておき
、常用の薬液槽の薬液が所定処理回数に至ると、交代の
薬液槽でウェーハの浸漬処理をするようにし、使用限度
に至った薬液を排出して冷却槽に入れ温度降下させ、低
温になった薬液をフィルタに通しろ過して元の薬液槽に
戻し再使用するようにしたものである。In the wafer cleaning apparatus according to the present invention, a spare chemical tank is installed as a spare in addition to the regular chemical tank, and when the chemical solution in the regular chemical tank reaches a predetermined number of times, the replacement chemical tank is replaced. The wafers are immersed in the wafer, and the chemical solution that has reached its usage limit is discharged and placed in a cooling tank to lower the temperature.The cooled chemical solution is filtered through a filter and returned to the original chemical tank for reuse. This is what I did.
この発明においては、常用の薬液槽の薬液が所定処理回
数に至るとウェーハが交代の薬液槽で浸漬処理され、使
用中止の薬液槽の薬液は排出され冷却槽で低温になり、
フィルタでろ過され異物が除去されて元の薬液槽に戻さ
れ、こうして薬液は数回の繰返し再使用がされる０
〔実施例〕
第１図はこの発明によるウェーハの洗浄装置の一実施例
を示す構成図であり、（１）〜（５） ’＋ （７）
、 （９） 。In this invention, when the chemical solution in the regular chemical bath reaches a predetermined number of processing times, the wafer is immersed in the alternate chemical bath, and the chemical solution in the discontinued chemical bath is drained and cooled to a low temperature in the cooling tank.
The chemical solution is filtered through a filter to remove foreign matter and returned to the original chemical tank, and thus the chemical solution is reused several times. It is a configuration diagram showing (1) to (5) '+ (7)
, (9).
Ｑｌは上記従来装置と同一のものである。（ホ）は交代
用の薬液槽で、収容した薬液を加熱するヒータａ〔が設
けられである。に）は各薬液槽＜１１．１２） 、 ｅ
Ａの薬液を排出する排出管、翰はとの排出管ｅηからの
薬液を一時ためておき、低温に降下させるための冷却槽
、（財）は冷却槽（イ）の薬液の温度を検出する温度セ
ンサ、（ハ）は冷却槽（イ）の薬液を送る送り管、に）
はポンプ、（ホ）は送り管（ハ）の途中に入れられ低温
の薬液が通され、異物を除去するフィルタ、（支）は弁
、に）は新薬液の供給管、翰は使用できなくなった薬液
の排出管、（至）は弁である。Ql is the same as in the conventional device. (E) is a chemical liquid tank for alternate use, and is equipped with a heater a for heating the stored chemical liquid. ) is each chemical tank <11.12), e
A discharge pipe for discharging the chemical solution from A, a cooling tank for temporarily storing the chemical solution from the discharge pipe eη of Kanhato, and bringing it down to a low temperature. (Foundation) detects the temperature of the chemical solution in the cooling tank (A). Temperature sensor (C) is to the feed pipe that sends the chemical liquid to the cooling tank (B))
(E) is the pump, (E) is a filter that is inserted in the middle of the feed pipe (C) to pass the low-temperature chemical solution and removes foreign substances, (branch) is the valve, (2) is the supply pipe for the new chemical solution, and the wire can no longer be used. The discharge pipe for the chemical solution, (to) is the valve.
上記一実施例の装置によるウェーハの洗浄は、次のよう
にする。まず、新薬液が冷却槽（イ）に供給され、ポン
プ（ハ）によシ送り管（ハ）からフィルタ（ホ）釦通さ
れ、各薬液槽（１１、（２１、翰に供給充満される０そ
こで、薬液槽（１） 、 ＋２）のヒータ傾が入れられ
薬液が設定した高温度に達すると、ウェーハを薬液槽（
１） 、 （２）に順に一定時間宛浸漬する。つづいて
、薬液槽（２）からのウェーハを水洗槽（３） 、 （
４）に順に入れ純水で洗う。ついで、ウェーハをすすぎ
乾燥機（５）に入れ、純水の噴射をしてから遠心脱水乾
燥する。Wafer cleaning using the apparatus of the above embodiment is performed as follows. First, the new chemical solution is supplied to the cooling tank (A), passed through the feed pipe (C) to the filter (E) button by the pump (C), and is supplied to each chemical solution tank (11, (21, and 2)). 0 Then, the heaters of the chemical baths (1), +2) are turned on, and when the chemical liquid reaches the set high temperature, the wafer is transferred to the chemical bath (1), +2).
1) and (2) for a certain period of time. Next, the wafers from the chemical tank (2) are transferred to the washing tank (3), (
4) and wash with pure water. Next, the wafer is placed in a rinse dryer (5), sprayed with pure water, and then centrifugally dehydrated and dried.
各薬液槽＋１） 、 （２１、Ｈの薬液の自動交換は、
次のようにして行われる０薬液槽＋１１ 、 （２）
、 ｅｌｌごとにウェーハの処理回数を計数している。Each chemical tank + 1), (21, automatic exchange of H chemical solution,
0 chemical tank + 11 performed as follows, (2)
, the number of wafer processing is counted for each ell.
例として薬液槽（２）が所定回数の５サイクル前になる
と、待期していた薬液槽（イ）のヒータａ〔が入れられ
る。この檜の薬液の温度が所定値に上昇後、薬液槽（２
）が所定処理回数に達するとこの槽の使用を中止し、薬
液槽翰に交代して使用を開始する。薬液槽（２）の薬液
を排出管Ｑηから冷却槽（イ）に入れろ。ここで薬液が
冷却され温度が５０°Ｃ以下に力ると、温度センサ（ホ
）の検出信号によりポンプ（ハ）が始動し、薬液は送り
管（ハ）からフィルタ翰に通されろ過され、薬液槽（２
）に戻され待摘状態になる０次Ｋ、薬液槽（１）が所定
処理回数の５サイクル前になると、薬液槽（２）のヒー
タＯＱが入れられる。For example, when the chemical liquid tank (2) reaches five cycles before the predetermined number of cycles, the waiting heater a of the chemical liquid tank (a) is turned on. After the temperature of this cypress chemical solution rises to a predetermined value, the chemical solution tank (2
) reaches a predetermined number of treatments, the use of this tank is stopped and the chemical tank is replaced by the chemical tank. Pour the chemical liquid from the chemical liquid tank (2) into the cooling tank (a) through the discharge pipe Qη. When the chemical liquid is cooled down to a temperature below 50°C, the pump (c) is started by the detection signal from the temperature sensor (e), and the chemical liquid is passed from the feed pipe (c) through the filter tube and filtered. Chemical tank (2
) is returned to the waiting state, and when the chemical liquid tank (1) reaches five cycles before the predetermined number of processing times, the heater OQ of the chemical liquid tank (2) is turned on.
このようにして、各薬液槽ｔｌ） 、 ＋２） 、 Ｈ
の使用前の新薬液は、昇温→ウェーハ処理（所定回数）
→冷却槽（イ）での冷却→ろ過→元の薬液槽へ戻し→昇
温→ウェーハ処理（所定回数）と、この循環サイクルを
２．３回繰返し使用された後、限度に至った薬液として
排出管−から排出される。つづいて、再び冷却槽（イ）
に新薬液が供給される。In this way, each chemical tank tl), +2), H
Before use, the new chemical solution is heated → wafer processed (predetermined number of times)
→ Cooling in the cooling tank (A) → Filtration → Return to the original chemical tank → Temperature increase → Wafer processing (predetermined number of times) After repeating this circulation cycle 2.3 times, the chemical solution has reached its limit. It is discharged from the discharge pipe. Next, the cooling tank (a) again
A new chemical solution will be supplied.
なお、上記実施例では常用の薬液槽を２檜と、水洗槽を
２槽とを設けたが、必要によシそれぞれ槽数を変えても
よい０
〔発明の効果〕
以上のように、この発明によれば、それぞれ薬液を充て
んした複数槽の薬液槽のうち、一槽を交代用に待誘し、
薬液を高温にして使用中の他の檜がウェーハの所定処理
回数に至ると使用中止し、交代の槽を使用し°、使用中
止の槽の薬液を冷却槽に入れ低温にし、フィルタに通し
て元の薬液槽に戻すようにし、使用限度に至った薬液は
外部に排出し、新液を補充するようにしたので、ウェー
７１の薬液槽への浸漬処理が中止することなく連続して
行え、自動化することができ、生産性が向上され、薬液
の再使用ができ排出量が低減し、薬液の使用量が減少さ
れる０In the above embodiment, two chemical tanks and two washing tanks were provided for regular use, but the number of tanks may be changed depending on the necessity. According to the invention, among a plurality of chemical liquid tanks each filled with a chemical liquid, one tank is reserved for replacement,
The chemical solution is heated to a high temperature, and when the other cypress in use reaches the specified number of wafer processing cycles, it is stopped and a replacement tank is used. Since the chemical liquid that has reached its usage limit is drained outside and replenished with new liquid, the wafer 71 can be immersed in the chemical liquid tank continuously without interruption. It can be automated, productivity is improved, chemicals can be reused, emissions are reduced, and the amount of chemicals used is reduced.
第１図はこの発明によるウェーノーの洗浄装置の一実施
例の構成図１、第２図は従来のウェーハの洗浄装置の構
成図である。
１．２・・・薬液槽、３．４・・・水洗槽、５・・・乾
燥機（すすぎ乾燥機）、１０・・・ヒータ、２０・・・
交代用薬液槽、２２・・・冷却槽、２４・・・送り管、
２５・・・ポンプ、２６・・・フィルタFIG. 1 is a block diagram of an embodiment of a wafer cleaning apparatus according to the present invention, and FIG. 2 is a block diagram of a conventional wafer cleaning apparatus. 1.2... Chemical tank, 3.4... Washing tank, 5... Dryer (rinsing dryer), 10... Heater, 20...
Alternative chemical liquid tank, 22...Cooling tank, 24...Feeding pipe,
25...Pump, 26...Filter
Claims (1)
を除き、この半導体ウェーハを水洗槽で洗い、この水洗
槽からのウェーハを乾燥機に入れ、乾燥するようにした
装置において、それぞれ薬液をためており、そのうちの
１種を交代用に待機させてあり、他の槽がウェーハの所
定処理回数に至ると使用を中止し、上記交代用の槽を使
用するようにした複数槽の薬液槽、上記使用中止の薬液
槽から排出された高温の薬液を受入れ、温度降下させる
冷却槽、この冷却槽の低温に下つた薬液を元の薬液槽に
戻す送り管、及びこの送り管の途中に設けられ、戻す薬
液をろ過するフィルタを備え、上記薬液槽の所定使用限
度に至つた薬液は上記冷却槽を経て外部に排出し、補充
の新薬液を上記冷却槽に入れ、上記フィルタに通して空
の上記薬液槽に充てんするようにしたことを特徴とする
半導体ウェーハの洗浄装置。A semiconductor wafer is immersed in a high-temperature chemical solution in a chemical solution tank to remove contamination, the semiconductor wafer is washed in a water washing tank, and the wafer from the washing tank is placed in a dryer for drying. a plurality of chemical solution tanks, one of which is kept on standby for replacement, and when the other tanks reach a predetermined number of wafer processing, use is stopped and the replacement tank is used; A cooling tank that receives and lowers the temperature of the high-temperature chemical discharged from the discontinued chemical tank, a feed pipe that returns the low-temperature chemical liquid in this cooling tank to the original chemical tank, and a pipe installed in the middle of this feed pipe. , a filter is provided to filter the chemical solution to be returned, and the chemical solution that has reached the specified usage limit in the chemical solution tank is discharged to the outside through the cooling tank, and a new chemical solution is put into the cooling tank to be replenished. A semiconductor wafer cleaning device, characterized in that the chemical solution tank is filled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25594784A JPS61133633A (en) | 1984-12-03 | 1984-12-03 | Wet scrubber of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25594784A JPS61133633A (en) | 1984-12-03 | 1984-12-03 | Wet scrubber of semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61133633A true JPS61133633A (en) | 1986-06-20 |
| JPH0481858B2 JPH0481858B2 (en) | 1992-12-25 |
Family
ID=17285786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25594784A Granted JPS61133633A (en) | 1984-12-03 | 1984-12-03 | Wet scrubber of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61133633A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01135024A (en) * | 1987-11-20 | 1989-05-26 | Mitsui Petrochem Ind Ltd | Washing |
| DE19926462C1 (en) * | 1999-02-18 | 2000-11-30 | Steag Micro Tech Gmbh | Method and device for treating substrates |
| KR100891067B1 (en) | 2007-12-03 | 2009-03-31 | 주식회사 동부하이텍 | Wet station apparatus |
| KR101099737B1 (en) | 2010-01-05 | 2011-12-28 | 세메스 주식회사 | Heated chemecal supply apparatus |
| JP2018018990A (en) * | 2016-07-28 | 2018-02-01 | 株式会社カネカ | Etching processing unit and etching processing method |
| CN111370294A (en) * | 2020-03-17 | 2020-07-03 | 长江存储科技有限责任公司 | Method, apparatus and storage medium for processing wafers using chemical reagents |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57148480U (en) * | 1981-03-12 | 1982-09-17 | ||
| JPS587830A (en) * | 1981-07-08 | 1983-01-17 | Hitachi Ltd | Article washing method and device thererof |
| JPS5981030U (en) * | 1982-11-24 | 1984-05-31 | 日本電気ホームエレクトロニクス株式会社 | semiconductor manufacturing equipment |
| JPS59123581A (en) * | 1982-12-28 | 1984-07-17 | 株式会社東芝 | Washing apparatus |
-
1984
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57148480U (en) * | 1981-03-12 | 1982-09-17 | ||
| JPS587830A (en) * | 1981-07-08 | 1983-01-17 | Hitachi Ltd | Article washing method and device thererof |
| JPS5981030U (en) * | 1982-11-24 | 1984-05-31 | 日本電気ホームエレクトロニクス株式会社 | semiconductor manufacturing equipment |
| JPS59123581A (en) * | 1982-12-28 | 1984-07-17 | 株式会社東芝 | Washing apparatus |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01135024A (en) * | 1987-11-20 | 1989-05-26 | Mitsui Petrochem Ind Ltd | Washing |
| DE19926462C1 (en) * | 1999-02-18 | 2000-11-30 | Steag Micro Tech Gmbh | Method and device for treating substrates |
| KR100891067B1 (en) | 2007-12-03 | 2009-03-31 | 주식회사 동부하이텍 | Wet station apparatus |
| KR101099737B1 (en) | 2010-01-05 | 2011-12-28 | 세메스 주식회사 | Heated chemecal supply apparatus |
| JP2018018990A (en) * | 2016-07-28 | 2018-02-01 | 株式会社カネカ | Etching processing unit and etching processing method |
| CN111370294A (en) * | 2020-03-17 | 2020-07-03 | 长江存储科技有限责任公司 | Method, apparatus and storage medium for processing wafers using chemical reagents |
| CN111370294B (en) * | 2020-03-17 | 2023-04-07 | 长江存储科技有限责任公司 | Method, apparatus and storage medium for processing wafers using chemical reagents |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0481858B2 (en) | 1992-12-25 |
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