JPH0481858B2 - - Google Patents
Info
- Publication number
- JPH0481858B2 JPH0481858B2 JP59255947A JP25594784A JPH0481858B2 JP H0481858 B2 JPH0481858 B2 JP H0481858B2 JP 59255947 A JP59255947 A JP 59255947A JP 25594784 A JP25594784 A JP 25594784A JP H0481858 B2 JPH0481858 B2 JP H0481858B2
- Authority
- JP
- Japan
- Prior art keywords
- chemical
- chemical liquid
- tank
- cleaning
- chemical solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000126 substance Substances 0.000 claims description 146
- 239000007788 liquid Substances 0.000 claims description 58
- 235000012431 wafers Nutrition 0.000 claims description 40
- 238000004140 cleaning Methods 0.000 claims description 28
- 238000001816 cooling Methods 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000001914 filtration Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000005406 washing Methods 0.000 description 6
- 238000007654 immersion Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、製造処理工程で汚染した半導体ウ
エーハを薬液及び純水で洗浄するようにした、半
導体ウエーハの洗浄装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor wafer cleaning apparatus that cleans semiconductor wafers contaminated during a manufacturing process using a chemical solution and pure water.
従来の製造工程における半導体ウエーハ（以下
「ウエーハ」と称する）の洗浄装置は、第２図に
構成図で示すようになつていた。１及び２は薬液
槽で、ウエーハに付着している処理液や異物を除
去するための薬液がためられている。３及び４は
薬液槽１及び２に順に浸漬処理されたウエーハを
純水で洗浄する洗浄槽、５は洗浄槽４からのウエ
ーハに純水を噴射後、遠心脱水乾燥するすすぎ乾
燥機である。６は薬液の供給管、７は弁、８は汚
れた薬液の排出管、９は弁、１０は薬液槽１，２
に供給された薬液を洗浄効率のよいように80〜
150℃に加熱するヒータである。
A cleaning apparatus for semiconductor wafers (hereinafter referred to as "wafers") in a conventional manufacturing process has a configuration as shown in FIG. 2. Chemical liquid tanks 1 and 2 store chemical liquid for removing processing liquid and foreign matter adhering to the wafer. Reference numerals 3 and 4 indicate cleaning tanks for washing the wafers sequentially immersed in chemical baths 1 and 2 with pure water, and 5 indicates a rinsing dryer for injecting pure water onto the wafers from the cleaning tank 4 and then centrifugally dehydrating and drying the wafers. 6 is a chemical supply pipe, 7 is a valve, 8 is a dirty chemical discharge pipe, 9 is a valve, 10 is a chemical tank 1, 2
80~ to improve the cleaning efficiency of the chemical solution supplied to the
This is a heater that heats up to 150℃.
上記従来装置において、カセツトに収容した多
数枚のウエーハ（図示は略す）を、薬液槽１，２
の高温の薬液に順次浸漬し、つづいて、水洗槽
３，４に順次入れられ、純水で洗われる。次にウ
エーハはすすぎ乾燥機５に入れられ、純水の噴射
を受けてから遠心脱水乾燥される。 In the conventional apparatus described above, a large number of wafers (not shown) housed in a cassette are placed in chemical tanks 1 and 2.
They are sequentially immersed in a high-temperature chemical solution, and then sequentially placed in washing tanks 3 and 4, where they are washed with pure water. Next, the wafer is placed in a rinse dryer 5, where it is sprayed with pure water and then centrifugally dehydrated and dried.
薬液槽１，２でのウエーハの浸漬処理で、ウエ
ーハの持込みなどによる異物が薬液中に増加し、
ウエーハの洗浄能力が低下するので、数十サイク
ルの浸漬使用後、薬液を交換するためにウエーハ
の浸漬処理を中断し、薬液の加熱をやめ、温度が
50℃以下になるのを待つて排出していた。つづい
て、新薬液を供給管６により空の薬液槽１叉は２
に供給し、ヒータ１０で薬液を80゜〜150℃に加熱
し、処理を再開し、このような操作を繰返してい
た。 During the immersion process of wafers in chemical baths 1 and 2, foreign matter due to wafers brought in increases in the chemical solution.
Since the cleaning ability of the wafer decreases, after several tens of cycles of immersion use, the wafer immersion process is interrupted to replace the chemical solution, the heating of the chemical solution is stopped, and the temperature is lowered.
They waited for the temperature to drop below 50℃ before discharging it. Next, the new chemical solution is supplied to the empty chemical tank 1 or 2 using the supply pipe 6.
The chemical solution was heated to 80° to 150° C. by the heater 10, the process was restarted, and this operation was repeated.
上記のような従来のウエーハの洗浄装置では、
使用薬液に汚れがでてきても、温度が高くて使用
中に薬液を循環ろ過することはできなかつた。こ
のため、薬液が汚れた薬液槽１又は２のウエーハ
の浸漬を中止し、薬液の温度低下をまち排出しな
ければならず、生産性を低下させていた。また、
排出薬液の処理が面倒であり、排出量が多いこと
は好ましくなかつた。そこで、薬液の排出量を極
力少なくするために、薬液をできるだけ長く使用
することが行われているが、処理サイクル数を増
加すると、薬液中の異物量が増加し、処理された
ウエーハに異物が付着し、パターン欠陥や薄酸化
膜の絶縁特性の低下などが増大し、ウエーハの品
質の著しい低下を招くという問題点があつた。
In conventional wafer cleaning equipment as mentioned above,
Even if the chemical solution used became dirty, it was not possible to circulate and filter the chemical solution during use due to the high temperature. For this reason, it is necessary to stop immersing the wafer in the chemical tank 1 or 2 contaminated with the chemical solution, and to drain the temperature of the chemical solution away, resulting in a decrease in productivity. Also,
Processing of the discharged chemical solution is troublesome, and a large amount of discharged chemical solution is undesirable. Therefore, in order to minimize the amount of chemical discharged, the chemical solution is used for as long as possible. However, as the number of processing cycles increases, the amount of foreign matter in the chemical solution increases, and the foreign matter may end up on the processed wafer. There was a problem in that the wafers adhered to each other, increasing pattern defects and deterioration of the insulation properties of the thin oxide film, resulting in a significant deterioration in the quality of the wafer.
この発明は、このような問題点を解決するため
になされたもので、薬液槽の薬液を一定の浸漬処
理回数ごとにろ過して再使用を可能にし、ろ過を
行うときには、交代用の薬液を新たに洗浄用に用
いることによつて、常に一定数の薬液槽を稼動さ
せて生産性の低下を防止するとともに、ウエーハ
の品質に影響を及ぼさない範囲で、薬液をできる
だけ長く使用し、薬液の交換回数を減らして薬液
の排出量を極力減少できるウエーハの洗浄装置を
得ることを目的としている。 This invention was made to solve these problems, and it enables reuse by filtering the chemical solution in the chemical tank every certain number of immersion treatments, and when performing filtration, it is possible to use a replacement chemical solution. By newly using it for cleaning, a certain number of chemical baths are always in operation to prevent a drop in productivity, and the chemical solution is used for as long as possible without affecting the quality of the wafers. The object of the present invention is to provide a wafer cleaning device that can reduce the number of exchanges and reduce the amount of chemical solution discharged as much as possible.
この発明に係る半導体ウエーハの洗浄装置は、
半導体ウエーハの洗浄用の薬液を収容し、ヒータ
により前記薬液が洗浄温度に加熱される洗浄用の
薬液槽、及び前記薬液が加熱されずに待機され加
熱されることにより洗浄用となる交代用の薬液槽
と、洗浄用の前記薬液槽への前記ウエーハの浸漬
処理回数をカウントするカウント手段と、前記各
カウント手段のカウント値に基づき洗浄用の前記
薬液槽の薬液がろ過時期近くに達したときに交代
用の前記薬液槽の薬液の加熱を開始するととも
に、前記ろ過時期に達した前記薬液の加熱を停止
する加熱制御部と、前記ろ過時期に達した前記薬
液を回収する冷却槽と、前記冷却槽に設けられ前
記冷却槽に回収された前記薬液の温度が所定温度
まで低下したことを検知する温度センサと、前記
温度センサの検知により動作し前記冷却槽の薬液
を送り管を介して元の前記薬液槽に送給するポン
プと、前記送り管の途中に設けられ前記冷却槽か
らの薬液をろ過するフイルタと、前記各カウント
手段のカウント値に基づき交換時期に達した前記
薬液槽の薬液を前記冷却槽を介して外部に排出す
る排出手段と、前記薬液を排出した前記薬液槽に
前記冷却槽及び送り管を介して新しい薬液を充て
んする充てん手段とを備えたものである。
The semiconductor wafer cleaning apparatus according to the present invention includes:
A cleaning chemical tank containing a chemical solution for cleaning semiconductor wafers and in which the chemical solution is heated to a cleaning temperature by a heater; a chemical solution tank, a counting means for counting the number of times the wafer is immersed in the cleaning chemical solution tank, and when the chemical solution in the cleaning chemical solution tank reaches near the filtration time based on the count value of each of the counting means; a heating control unit that starts heating the chemical liquid in the alternate chemical liquid tank and stops heating the chemical liquid that has reached the filtration time; a cooling tank that collects the chemical liquid that has reached the filtration time; A temperature sensor is provided in a cooling tank and detects when the temperature of the chemical solution collected in the cooling tank has decreased to a predetermined temperature; a pump for feeding the chemical liquid to the chemical liquid tank, a filter provided in the middle of the feed pipe for filtering the chemical liquid from the cooling tank, and a chemical liquid in the chemical liquid tank whose replacement time has been reached based on the count value of each of the counting means. and a filling means for filling the chemical liquid tank from which the chemical liquid has been discharged with new chemical liquid through the cooling tank and the feed pipe.
この発明においては、常用の薬液槽の薬液が所
定処理回数に至るとウエーハが交代の薬液槽で浸
漬処理され、ろ過時期に達した薬液槽の薬液は冷
却槽に回収され、温度が下がるのを待つてフイル
タによりろ過され、異物が除去されたのち元の薬
液槽に戻されて交代用に待機され、こうして薬液
は数回繰り返し再使用され、使用限界に至つたと
きには、新しい薬液と交換される。
In this invention, when the chemical solution in the regular chemical bath reaches a predetermined number of processing times, the wafer is immersed in the alternate chemical bath, and when the chemical solution in the chemical bath reaches the filtration time, it is collected in the cooling tank and the temperature is allowed to drop. After waiting, it is filtered through a filter, and after foreign matter is removed, it is returned to the original chemical tank and kept on standby for replacement.The chemical solution is thus reused several times, and when it reaches its usable limit, it is replaced with a new chemical solution. .
第１図はこの発明によるウエーハの洗浄装置の
一実施例を示す構成図であり、１〜５，７，９，
１０は上記従来装置と同一のものである。２０は
交代用の薬液槽で、収容した薬液を加熱するヒー
タ１０が設けられてある。このとき、図示されて
いないが、各薬液槽１，２，２０の薬液への浸漬
処理回数をカウントするカウント手段が設けら
れ、このカウント手段のカウント値に基づき、薬
液槽１又は２の薬液がろ過時期に達したときに交
代用の薬液槽２０の加熱を開始するとともに、ろ
過時期に達した薬液の加熱を停止する加熱制御部
が設けられている。
FIG. 1 is a block diagram showing an embodiment of a wafer cleaning apparatus according to the present invention.
10 is the same as the conventional device described above. Reference numeral 20 denotes a chemical solution tank for alternate use, and a heater 10 for heating the stored chemical solution is provided. At this time, although not shown, a counting means is provided for counting the number of times each of the chemical liquid tanks 1, 2, and 20 is immersed in the chemical liquid, and based on the count value of this counting means, the chemical liquid in the chemical liquid tank 1 or 2 is A heating control unit is provided that starts heating the alternate chemical liquid tank 20 when the filtering time has arrived and stops heating the chemical liquid when the filtering time has reached.
２１は薬液槽１，２，２０の薬液を排出する排
出管、２２は排出管２１からの薬液を回収し後述
のポンプ、フイルタ等を破損しない所定温度まで
薬液を降温させるための冷却槽、２３は冷却槽２
２の薬液が所定温度まで低下したことを検知する
温度センサ、２４は冷却槽２２の薬液を送る送り
管、２５はポンプ、２６は送り管２４の途中に設
けられポンプ２５により送り管２４を送給される
薬液をろ過して異物を除去するフイルタ、２７は
弁、２８は冷却槽２２に新しい薬液を供給する供
給管、３０は弁であり、排出管２９とともに排出
手段を構成し、冷却槽２２を介して交換時期に至
つた薬液を外部に排出する。 21 is a discharge pipe for discharging the chemicals from the chemical tanks 1, 2, and 20; 22 is a cooling tank for collecting the chemicals from the discharge pipe 21 and lowering the temperature of the chemicals to a predetermined temperature that will not damage pumps, filters, etc., which will be described later; 23; is cooling tank 2
2 is a temperature sensor that detects when the chemical liquid has dropped to a predetermined temperature; 24 is a feed pipe for sending the chemical liquid in the cooling tank 22; 25 is a pump; 26 is installed in the middle of the feed pipe 24; A filter 27 filters the supplied chemical solution to remove foreign substances, 27 is a valve, 28 is a supply pipe that supplies new chemical solution to the cooling tank 22, 30 is a valve, which constitutes a discharge means together with the discharge pipe 29, and the cooling tank 22, the chemical solution that has reached the time of replacement is discharged to the outside.
このとき、供給管２８、弁２７、ポンプ２５、
送り管２４、フイルタ２６は充てん手段を構成
し、薬液が外部に排出された薬液槽に新しい薬液
を充てんする。 At this time, the supply pipe 28, the valve 27, the pump 25,
The feed pipe 24 and the filter 26 constitute a filling means, which fills the chemical tank from which the chemical liquid has been discharged to the outside with new chemical liquid.
上記一実施例の装置によるウエーハの洗浄は、
次のようにする。まず、新薬液が冷却槽２２に供
給され、ポンプ２５により送り管２４からフイル
タ２６に通され、各薬液槽１，２，２０に供給充
満される。そこで、薬液槽１，２のヒータ１０が
入れられ薬液が設定した洗浄温度に達すると、ウ
エーハを薬液槽１，２に順に一定時間宛浸漬す
る。つづいて、薬液槽２からのウエーハを水洗槽
３，４に順に入れ純水で洗う。ついで、ウエーハ
をすすぎ乾燥機５に入れ、純水の噴射をしてから
遠心脱水乾燥する。 Wafer cleaning using the apparatus of the above embodiment is as follows:
Do as follows. First, a new chemical solution is supplied to the cooling tank 22, passed through the feed pipe 24 through the filter 26 by the pump 25, and is supplied to fill each of the chemical solution tanks 1, 2, and 20. Therefore, when the heaters 10 of the chemical liquid baths 1 and 2 are turned on and the chemical liquid reaches the set cleaning temperature, the wafer is immersed in the chemical liquid baths 1 and 2 in order for a certain period of time. Subsequently, the wafers from the chemical solution tank 2 are placed in washing tanks 3 and 4 in order and washed with pure water. Next, the wafer is placed in a rinse dryer 5, sprayed with pure water, and then centrifugally dehydrated and dried.
各薬液槽１，２，２０の薬液の自動交換は、次
のようにして行われる。薬液槽１，２，２０ごと
にウエーハの浸漬処理回数をカウント手段により
カウントし、例として薬液槽２が所定回数の５サ
イクル前になつてろ過時期近くになると、待機し
ていた交代用の薬液槽２０のヒータ１０を加熱制
御部によりオンして薬液の加熱を開始し、薬液槽
２のカウント手段のカウント値が所定回数に達す
ると、薬液槽２のヒータ１０をオフして薬液槽２
０に交代して使用を開始する。薬液槽２の薬液を
排出管２１から冷却槽２２に入れる。ここで薬液
の温度が50℃以下になると、温度センサ２３の検
出信号によりポンプ２５が始動し、薬液は送り管
２４からフイルタ２６に通されろ過され、薬液槽
２に戻され待機状態になる。次に、薬液槽１が所
定処理回数の５サイクル前になると、薬液槽２の
ヒータ１０が入れられる。 Automatic replacement of the chemical liquid in each chemical liquid tank 1, 2, 20 is performed as follows. The number of wafer immersion treatments is counted by a counting means in each of chemical baths 1, 2, and 20. For example, when chemical bath 2 reaches 5 cycles before the predetermined number of cycles and is nearing the filtration time, the waiting replacement chemical solution is The heater 10 of the tank 20 is turned on by the heating control unit to start heating the chemical liquid, and when the count value of the counting means of the chemical liquid tank 2 reaches a predetermined number of times, the heater 10 of the chemical liquid tank 2 is turned off and the heating of the chemical liquid tank 2 is started.
0 and start using it. The chemical liquid in the chemical liquid tank 2 is put into the cooling tank 22 from the discharge pipe 21. When the temperature of the chemical drops below 50° C., the pump 25 is started by a detection signal from the temperature sensor 23, and the chemical is passed from the feed pipe 24 through the filter 26, filtered, and returned to the chemical tank 2, where it enters a standby state. Next, when the chemical liquid tank 1 reaches five cycles before the predetermined number of processing times, the heater 10 of the chemical liquid tank 2 is turned on.
このようにして、各薬液槽１，２，２０の使用
前の新薬液は、昇温→ウエーハ処理（所定回数）
→冷却槽２２での冷却→ろ過→元の薬液槽へ戻し
→昇温→ウエーハ処理（所定回数）と、この循環
サイクルを２、３回繰返し使用された後、限度に
至つた薬液として排出管２９から排出される。つ
づいて、再び冷却槽２２に新薬液が供給される。 In this way, the temperature of the new chemical solution in each chemical tank 1, 2, 20 before use is increased → wafer processing (predetermined number of times)
→ Cooling in the cooling tank 22 → Filtration → Return to the original chemical tank → Temperature increase → Wafer processing (predetermined number of times) After this circulation cycle is repeated two or three times, the chemical has reached its limit and is discharged from the pipe. It is discharged from 29. Subsequently, the new chemical solution is supplied to the cooling tank 22 again.
なお、上記実施例では常用の薬液槽を２槽と、
水洗槽を２槽とを設けたが、必要によりそれぞれ
槽数を変えてもよい。 In addition, in the above embodiment, there are two commonly used chemical liquid tanks,
Although two washing tanks are provided, the number of washing tanks may be changed as necessary.
以上のように、この発明によれば、それぞれ薬
液を充てんした複数槽の薬液槽のうち、一槽を交
代用に待機し、使用中の薬液槽の薬液がろ過時期
に至るとこれを冷却槽に回収し、代わりに交代用
の薬液槽を使用し、冷却槽において降温した薬液
をフイルタによりろ過して元の薬液槽に戻すよう
にし、使用限度に至つて交換時期に達した薬液は
外部に排出し、新しい薬液を充てんするようにし
たため、ウエーハの薬液槽への浸漬処理が中止す
ることなく連続して行え、自動化することがで
き、生産性が向上され、薬液の再使用ができ排出
量が低減し、薬液の使用量が減少される。
As described above, according to the present invention, one of the plurality of chemical liquid tanks each filled with a chemical liquid is kept on standby for replacement, and when the chemical liquid in the chemical liquid tank in use reaches the time for filtration, it is transferred to the cooling tank. Instead, a replacement chemical tank is used, and the chemical liquid that has cooled in the cooling tank is filtered through a filter and returned to the original chemical tank. Chemical liquids that have reached their usage limit and are due for replacement are stored outside. Since the wafers are drained and filled with new chemicals, the process of immersing wafers in the chemical tank can be performed continuously without interruption and can be automated, improving productivity, allowing the reuse of chemicals, and reducing emissions. is reduced, and the amount of chemical solution used is reduced.
第１図はこの発明によるウエーハの洗浄装置の
一実施例の構成図、第２図は従来のウエーハの洗
浄装置の構成図である。
１，２……薬液槽、３，４……水洗槽、５……
乾燥機（すすぎ乾燥機）、１０……ヒータ、２０
……交代用薬液槽、２２……冷却槽、２４……送
り管、２５……ポンプ、２６……フイルタ。な
お、図中同一符号は同一又は相当部分を示す。
FIG. 1 is a block diagram of an embodiment of a wafer cleaning apparatus according to the present invention, and FIG. 2 is a block diagram of a conventional wafer cleaning apparatus. 1, 2... Chemical tank, 3, 4... Washing tank, 5...
Dryer (rinse dryer), 10... Heater, 20
...Replacement chemical tank, 22...Cooling tank, 24...Feed pipe, 25...Pump, 26...Filter. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
タにより前記薬液が洗浄温度に加熱される洗浄用
の薬液槽、及び前記薬液が加熱されずに待機され
加熱されることにより洗浄用となる交代用の薬液
槽と、 洗浄用の前記薬液槽への前記ウエーハの浸漬処
理回数をカウントするカウント手段と、 前記各カウント手段のカウント値に基づき洗浄
用の前記薬液槽の薬液がろ過時期近くに達したと
きに交代用の前記薬液槽の薬液の加熱を開始する
とともに、前記ろ過時期に達した前記薬液の加熱
を停止する加熱制御部と、 前記ろ過時期に達した前記薬液を回収する冷却
槽と、 前記冷却槽に設けられ前記冷却槽に回収された
前記薬液の温度が所定温度まで低下したことを検
知する温度センサと、 前記温度センサの検知により動作し前記冷却槽
の薬液を送り管を介して元の前記薬液槽に送給す
るポンプと、 前記送り管の途中に設けられ前記冷却槽からの
薬液をろ過するフイルタと、 前記各カウント手段のカウント値に基づき交換
時期に達した前記薬液槽の薬液を前記冷却槽を介
して外部に排出する排出手段と、 前記薬液を排出した前記薬液槽に前記冷却槽及
び送り管を介して新しい薬液を充てんする充てん
手段と を備えたことを特徴とする半導体ウエーハの洗浄
装置。[Scope of Claims] 1. A cleaning chemical tank containing a chemical solution for cleaning semiconductor wafers and heating the chemical solution to a cleaning temperature by a heater, and cleaning by waiting and heating the chemical solution without being heated. a replacement chemical bath for cleaning; a counting means for counting the number of times the wafer is immersed in the cleaning chemical bath; and a filter for filtering the chemical liquid in the cleaning chemical bath based on the count value of each counting means. a heating control unit that starts heating the chemical liquid in the replacement chemical liquid tank when the time is near, and stops heating the chemical liquid when the filtration time has been reached; and collecting the chemical liquid when the filtration time has been reached. a temperature sensor provided in the cooling tank to detect when the temperature of the chemical solution collected in the cooling tank has decreased to a predetermined temperature; A pump that supplies the chemical liquid to the original chemical tank via a feeding pipe; A filter that is provided in the middle of the feeding pipe that filters the chemical liquid from the cooling tank; and a filter that determines when it is time to replace the chemical liquid based on the count values of each of the counting means. a discharge means for discharging the chemical liquid from the chemical liquid tank to the outside through the cooling tank; and a filling means for filling the chemical liquid tank from which the chemical liquid has been discharged with new chemical liquid through the cooling tank and the feed pipe. A semiconductor wafer cleaning device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25594784A JPS61133633A (en) | 1984-12-03 | 1984-12-03 | Wet scrubber of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25594784A JPS61133633A (en) | 1984-12-03 | 1984-12-03 | Wet scrubber of semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61133633A JPS61133633A (en) | 1986-06-20 |
| JPH0481858B2 true JPH0481858B2 (en) | 1992-12-25 |
Family
ID=17285786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25594784A Granted JPS61133633A (en) | 1984-12-03 | 1984-12-03 | Wet scrubber of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61133633A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2522805B2 (en) * | 1987-11-20 | 1996-08-07 | 三井石油化学工業株式会社 | Cleaning method |
| DE19926462C1 (en) * | 1999-02-18 | 2000-11-30 | Steag Micro Tech Gmbh | Method and device for treating substrates |
| KR100891067B1 (en) | 2007-12-03 | 2009-03-31 | 주식회사 동부하이텍 | Wet station apparatus |
| KR101099737B1 (en) | 2010-01-05 | 2011-12-28 | 세메스 주식회사 | Heated chemecal supply apparatus |
| JP2018018990A (en) * | 2016-07-28 | 2018-02-01 | 株式会社カネカ | Etching processing unit and etching processing method |
| CN111370294B (en) * | 2020-03-17 | 2023-04-07 | 长江存储科技有限责任公司 | Method, apparatus and storage medium for processing wafers using chemical reagents |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57148480U (en) * | 1981-03-12 | 1982-09-17 | ||
| JPS587830A (en) * | 1981-07-08 | 1983-01-17 | Hitachi Ltd | Article washing method and device thererof |
| JPS5981030U (en) * | 1982-11-24 | 1984-05-31 | 日本電気ホームエレクトロニクス株式会社 | semiconductor manufacturing equipment |
| JPS59123581A (en) * | 1982-12-28 | 1984-07-17 | 株式会社東芝 | Washing apparatus |
-
1984
- 1984-12-03 JP JP25594784A patent/JPS61133633A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61133633A (en) | 1986-06-20 |
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