JPS61126689A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS61126689A
JPS61126689A JP59246814A JP24681484A JPS61126689A JP S61126689 A JPS61126689 A JP S61126689A JP 59246814 A JP59246814 A JP 59246814A JP 24681484 A JP24681484 A JP 24681484A JP S61126689 A JPS61126689 A JP S61126689A
Authority
JP
Japan
Prior art keywords
word
line
block
cell array
lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59246814A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0467717B2 (enrdf_load_stackoverflow
Inventor
Yoshihiro Takemae
義博 竹前
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59246814A priority Critical patent/JPS61126689A/ja
Priority to US06/798,785 priority patent/US4758993A/en
Priority to DE8585114695T priority patent/DE3585773D1/de
Priority to EP85114695A priority patent/EP0182353B1/en
Publication of JPS61126689A publication Critical patent/JPS61126689A/ja
Publication of JPH0467717B2 publication Critical patent/JPH0467717B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
JP59246814A 1984-11-19 1984-11-21 半導体記憶装置 Granted JPS61126689A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59246814A JPS61126689A (ja) 1984-11-21 1984-11-21 半導体記憶装置
US06/798,785 US4758993A (en) 1984-11-19 1985-11-18 Random access memory device formed on a semiconductor substrate having an array of memory cells divided into sub-arrays
DE8585114695T DE3585773D1 (de) 1984-11-19 1985-11-19 Auf einem halbleitersubstrat formierter ram, mit einer in submatrizen unterteilten speichermatrix.
EP85114695A EP0182353B1 (en) 1984-11-19 1985-11-19 Random access memory device formed on a semiconductor substrate having an array of memory cells divided in sub-arrays

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59246814A JPS61126689A (ja) 1984-11-21 1984-11-21 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS61126689A true JPS61126689A (ja) 1986-06-14
JPH0467717B2 JPH0467717B2 (enrdf_load_stackoverflow) 1992-10-29

Family

ID=17154081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59246814A Granted JPS61126689A (ja) 1984-11-19 1984-11-21 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS61126689A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63113997A (ja) * 1986-10-31 1988-05-18 Nec Corp 半導体記憶装置
JPS63133397A (ja) * 1986-11-25 1988-06-06 Nec Corp 半導体集積化メモリ
JPS63247995A (ja) * 1987-04-03 1988-10-14 Mitsubishi Electric Corp 半導体記憶装置
JPH01144294A (ja) * 1987-11-30 1989-06-06 Toshiba Corp キャッシュメモリ
JPH02226595A (ja) * 1989-02-27 1990-09-10 Nec Corp 半導体記憶装置
JPH04106783A (ja) * 1990-08-28 1992-04-08 Sharp Corp ダイナミック型半導体記憶装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114385A (ja) * 1981-12-26 1983-07-07 Fujitsu Ltd 半導体記憶装置のデコ−ダ回路
JPS58211393A (ja) * 1982-06-02 1983-12-08 Mitsubishi Electric Corp 半導体メモリ装置
JPS58212696A (ja) * 1982-06-03 1983-12-10 Mitsubishi Electric Corp 半導体メモリ装置
JPS5930294A (ja) * 1982-08-11 1984-02-17 Toshiba Corp 半導体記憶装置
JPS5965468A (ja) * 1982-10-06 1984-04-13 Mitsubishi Electric Corp 半導体メモリ装置
JPS5972699A (ja) * 1982-10-18 1984-04-24 Mitsubishi Electric Corp 半導体メモリ装置
JPS5972695A (ja) * 1982-10-18 1984-04-24 Mitsubishi Electric Corp 半導体メモリ装置
JPS5972698A (ja) * 1982-10-18 1984-04-24 Mitsubishi Electric Corp 半導体メモリ装置
JPS5975488A (ja) * 1982-10-20 1984-04-28 Mitsubishi Electric Corp 半導体メモリ装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114385A (ja) * 1981-12-26 1983-07-07 Fujitsu Ltd 半導体記憶装置のデコ−ダ回路
JPS58211393A (ja) * 1982-06-02 1983-12-08 Mitsubishi Electric Corp 半導体メモリ装置
JPS58212696A (ja) * 1982-06-03 1983-12-10 Mitsubishi Electric Corp 半導体メモリ装置
JPS5930294A (ja) * 1982-08-11 1984-02-17 Toshiba Corp 半導体記憶装置
JPS5965468A (ja) * 1982-10-06 1984-04-13 Mitsubishi Electric Corp 半導体メモリ装置
JPS5972699A (ja) * 1982-10-18 1984-04-24 Mitsubishi Electric Corp 半導体メモリ装置
JPS5972695A (ja) * 1982-10-18 1984-04-24 Mitsubishi Electric Corp 半導体メモリ装置
JPS5972698A (ja) * 1982-10-18 1984-04-24 Mitsubishi Electric Corp 半導体メモリ装置
JPS5975488A (ja) * 1982-10-20 1984-04-28 Mitsubishi Electric Corp 半導体メモリ装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63113997A (ja) * 1986-10-31 1988-05-18 Nec Corp 半導体記憶装置
JPS63133397A (ja) * 1986-11-25 1988-06-06 Nec Corp 半導体集積化メモリ
JPS63247995A (ja) * 1987-04-03 1988-10-14 Mitsubishi Electric Corp 半導体記憶装置
JPH01144294A (ja) * 1987-11-30 1989-06-06 Toshiba Corp キャッシュメモリ
JPH02226595A (ja) * 1989-02-27 1990-09-10 Nec Corp 半導体記憶装置
JPH04106783A (ja) * 1990-08-28 1992-04-08 Sharp Corp ダイナミック型半導体記憶装置

Also Published As

Publication number Publication date
JPH0467717B2 (enrdf_load_stackoverflow) 1992-10-29

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