JPS61123142A - ドライエツチング方法 - Google Patents

ドライエツチング方法

Info

Publication number
JPS61123142A
JPS61123142A JP59244945A JP24494584A JPS61123142A JP S61123142 A JPS61123142 A JP S61123142A JP 59244945 A JP59244945 A JP 59244945A JP 24494584 A JP24494584 A JP 24494584A JP S61123142 A JPS61123142 A JP S61123142A
Authority
JP
Japan
Prior art keywords
etching
gas
dry etching
oxygen
halogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59244945A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0363807B2 (https=
Inventor
Kazuyuki Tomita
和之 富田
Masuo Tanno
丹野　益男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59244945A priority Critical patent/JPS61123142A/ja
Priority to US06/799,657 priority patent/US4678539A/en
Publication of JPS61123142A publication Critical patent/JPS61123142A/ja
Publication of JPH0363807B2 publication Critical patent/JPH0363807B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5346—Dry etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP59244945A 1984-11-20 1984-11-20 ドライエツチング方法 Granted JPS61123142A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59244945A JPS61123142A (ja) 1984-11-20 1984-11-20 ドライエツチング方法
US06/799,657 US4678539A (en) 1984-11-20 1985-11-19 Dry-etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59244945A JPS61123142A (ja) 1984-11-20 1984-11-20 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS61123142A true JPS61123142A (ja) 1986-06-11
JPH0363807B2 JPH0363807B2 (https=) 1991-10-02

Family

ID=17126295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59244945A Granted JPS61123142A (ja) 1984-11-20 1984-11-20 ドライエツチング方法

Country Status (2)

Country Link
US (1) US4678539A (https=)
JP (1) JPS61123142A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990005994A1 (fr) * 1988-11-18 1990-05-31 Kabushiki Kaisha Tokuda Seisakusho Procede de gravure par la voie seche
JPH1187324A (ja) * 1997-09-04 1999-03-30 Hitachi Ltd プラズマ処理方法
KR100376233B1 (ko) * 1995-09-28 2003-06-12 미쓰이 가가쿠 가부시키가이샤 드라이프로세스용가스
WO2007105261A1 (ja) * 2006-03-09 2007-09-20 Philtech Inc. 層間絶縁膜のドライエッチング方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4923562A (en) * 1987-07-16 1990-05-08 Texas Instruments Incorporated Processing of etching refractory metals
US4873118A (en) * 1988-11-18 1989-10-10 Atlantic Richfield Company Oxygen glow treating of ZnO electrode for thin film silicon solar cell
EP0424299A3 (en) * 1989-10-20 1991-08-28 International Business Machines Corporation Selective silicon nitride plasma etching
US5188704A (en) * 1989-10-20 1993-02-23 International Business Machines Corporation Selective silicon nitride plasma etching
US5296095A (en) * 1990-10-30 1994-03-22 Matsushita Electric Industrial Co., Ltd. Method of dry etching
US5431772A (en) * 1991-05-09 1995-07-11 International Business Machines Corporation Selective silicon nitride plasma etching process
DE4232475C2 (de) * 1992-09-28 1998-07-02 Siemens Ag Verfahren zum plasmachemischen Trockenätzen von Si¶3¶N¶4¶-Schichten hochselektiv zu SiO¶2¶-Schichten
US5756402A (en) * 1992-12-28 1998-05-26 Kabushiki Kaisha Toshiba Method of etching silicon nitride film
US5824604A (en) * 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist
US5911887A (en) * 1996-07-19 1999-06-15 Cypress Semiconductor Corporation Method of etching a bond pad
US6536449B1 (en) 1997-11-17 2003-03-25 Mattson Technology Inc. Downstream surface cleaning process
US20090191715A1 (en) * 2006-03-09 2009-07-30 Toshio Hayashi Method for etching interlayer dielectric film
JP5537324B2 (ja) * 2010-08-05 2014-07-02 株式会社東芝 半導体装置の製造方法
CN107708840B (zh) * 2015-05-29 2022-12-20 俄亥俄州创新基金会 从气体流分离co2的方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8004005A (nl) * 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990005994A1 (fr) * 1988-11-18 1990-05-31 Kabushiki Kaisha Tokuda Seisakusho Procede de gravure par la voie seche
KR100376233B1 (ko) * 1995-09-28 2003-06-12 미쓰이 가가쿠 가부시키가이샤 드라이프로세스용가스
JPH1187324A (ja) * 1997-09-04 1999-03-30 Hitachi Ltd プラズマ処理方法
WO2007105261A1 (ja) * 2006-03-09 2007-09-20 Philtech Inc. 層間絶縁膜のドライエッチング方法

Also Published As

Publication number Publication date
JPH0363807B2 (https=) 1991-10-02
US4678539A (en) 1987-07-07

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term