JPS6111886B2 - - Google Patents
Info
- Publication number
- JPS6111886B2 JPS6111886B2 JP56149615A JP14961581A JPS6111886B2 JP S6111886 B2 JPS6111886 B2 JP S6111886B2 JP 56149615 A JP56149615 A JP 56149615A JP 14961581 A JP14961581 A JP 14961581A JP S6111886 B2 JPS6111886 B2 JP S6111886B2
- Authority
- JP
- Japan
- Prior art keywords
- powder
- silicon nitride
- nitrogen
- silicon
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000843 powder Substances 0.000 claims description 48
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 41
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 39
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 18
- -1 nitrogen-containing silane compound Chemical class 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229910000077 silane Inorganic materials 0.000 claims description 9
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 14
- 239000013078 crystal Substances 0.000 description 14
- 239000000047 product Substances 0.000 description 11
- 239000002994 raw material Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 239000002245 particle Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 239000012299 nitrogen atmosphere Substances 0.000 description 6
- 239000007858 starting material Substances 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000000635 electron micrograph Methods 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 description 3
- 229910000071 diazene Inorganic materials 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005469 granulation Methods 0.000 description 3
- 230000003179 granulation Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005695 dehalogenation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012772 electrical insulation material Substances 0.000 description 1
- 230000009970 fire resistant effect Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14961581A JPS5855316A (ja) | 1981-09-24 | 1981-09-24 | 窒化珪素粉末の製造法 |
DE19823235304 DE3235304A1 (de) | 1981-09-24 | 1982-09-24 | Verfahren zum herstellen von siliciumnitrid-pulver |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14961581A JPS5855316A (ja) | 1981-09-24 | 1981-09-24 | 窒化珪素粉末の製造法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5855316A JPS5855316A (ja) | 1983-04-01 |
JPS6111886B2 true JPS6111886B2 (fr) | 1986-04-05 |
Family
ID=15479076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14961581A Granted JPS5855316A (ja) | 1981-09-24 | 1981-09-24 | 窒化珪素粉末の製造法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5855316A (fr) |
DE (1) | DE3235304A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010114141A1 (fr) | 2009-03-30 | 2010-10-07 | 宇部興産株式会社 | Poudre d'un composé de silane contenant de l'azote et son procédé de fabrication |
JP2011213546A (ja) * | 2010-03-31 | 2011-10-27 | Ube Industries Ltd | 結晶質窒化ケイ素粉末の製造方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5939704A (ja) * | 1982-08-26 | 1984-03-05 | Asahi Glass Co Ltd | 窒化珪素の合成法 |
JPS61191506A (ja) * | 1985-02-18 | 1986-08-26 | Toyo Soda Mfg Co Ltd | 高α型窒化珪素粉末の製造法 |
JPS62148309A (ja) * | 1985-12-23 | 1987-07-02 | Toyo Soda Mfg Co Ltd | 高α型窒化珪素粉末の製造法 |
JP2907366B2 (ja) * | 1993-05-18 | 1999-06-21 | 宇部興産株式会社 | 結晶質窒化珪素粉末の製造法 |
JP5589295B2 (ja) * | 2009-03-30 | 2014-09-17 | 宇部興産株式会社 | 含窒素シラン化合物粉末及びその製造方法 |
JP5589294B2 (ja) * | 2009-03-30 | 2014-09-17 | 宇部興産株式会社 | 含窒素シラン化合物粉末及びその製造方法 |
JP5170344B2 (ja) * | 2010-03-31 | 2013-03-27 | 宇部興産株式会社 | サイアロン系酸窒化物蛍光体の製造方法及びサイアロン系酸窒化物蛍光体 |
KR101574888B1 (ko) * | 2014-04-14 | 2015-12-07 | 오씨아이 주식회사 | 입자크기의 균일도를 향상시킨 연속식 질화규소 제조장치 및 제조방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52130300A (en) * | 1976-04-26 | 1977-11-01 | Sato Kenkyusho | Constanttpressure mechanism for hand labeler or the like |
JPS54124898A (en) * | 1978-03-22 | 1979-09-28 | Toyo Soda Mfg Co Ltd | Preparation of silicon nitride |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4101616A (en) * | 1975-10-30 | 1978-07-18 | Gte Sylvania Incorporated | Process for producing Si3 N4 article |
US4264547A (en) * | 1978-11-08 | 1981-04-28 | Battelle Memorial Institute | Silicon nitride-based sintering composition |
JPS5595605A (en) * | 1979-01-10 | 1980-07-21 | Toyo Soda Mfg Co Ltd | High purity silicon nitride and production thereof |
-
1981
- 1981-09-24 JP JP14961581A patent/JPS5855316A/ja active Granted
-
1982
- 1982-09-24 DE DE19823235304 patent/DE3235304A1/de not_active Ceased
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52130300A (en) * | 1976-04-26 | 1977-11-01 | Sato Kenkyusho | Constanttpressure mechanism for hand labeler or the like |
JPS54124898A (en) * | 1978-03-22 | 1979-09-28 | Toyo Soda Mfg Co Ltd | Preparation of silicon nitride |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010114141A1 (fr) | 2009-03-30 | 2010-10-07 | 宇部興産株式会社 | Poudre d'un composé de silane contenant de l'azote et son procédé de fabrication |
JP2011213546A (ja) * | 2010-03-31 | 2011-10-27 | Ube Industries Ltd | 結晶質窒化ケイ素粉末の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
DE3235304A1 (de) | 1983-04-14 |
JPS5855316A (ja) | 1983-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4387079A (en) | Method of manufacturing high-purity silicon nitride powder | |
JPH0134925B2 (fr) | ||
US4619905A (en) | Process for the synthesis of silicon nitride | |
JPS5913442B2 (ja) | 高純度の型窒化珪素の製造法 | |
JPS6111886B2 (fr) | ||
US4716028A (en) | Process for preparation of high-type silicon nitride powder | |
EP0206795B1 (fr) | Procédé de préparation de poudres de nitrure de silicium | |
JPS6111885B2 (fr) | ||
US4770830A (en) | Process for preparation of high α-type silicon nitride powder | |
JPS5930645B2 (ja) | 高純度α型窒化珪素の製造法 | |
JPH0535084B2 (fr) | ||
JPS6227004B2 (fr) | ||
JP2000044223A (ja) | 炭化珪素の製造方法 | |
JPS6227003B2 (fr) | ||
EP0179670A2 (fr) | Production de whiskers en carbure de silicium de type toile d'araignée | |
JPS621564B2 (fr) | ||
JPH0454609B2 (fr) | ||
JPH0454610B2 (fr) | ||
JPS6259049B2 (fr) | ||
JP2635695B2 (ja) | α−窒化ケイ素粉末の製造方法 | |
JPS6227400A (ja) | 窒化けい素ウイスカ−の製造方法 | |
JPS6335563B2 (fr) | ||
JPS63162516A (ja) | 窒化ケイ素の製造方法 | |
JPS63100099A (ja) | β−サイアロンウイスカ−の製造方法 | |
JPS6140805A (ja) | 窒化珪素微粉末の製造方法 |