JPS61116871A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPS61116871A
JPS61116871A JP23965384A JP23965384A JPS61116871A JP S61116871 A JPS61116871 A JP S61116871A JP 23965384 A JP23965384 A JP 23965384A JP 23965384 A JP23965384 A JP 23965384A JP S61116871 A JPS61116871 A JP S61116871A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
source
gate
wirings
11b
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23965384A
Inventor
Mitsuhiro Mukaidono
Hirohisa Tanaka
Kozo Yano
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725Source or drain electrodes for field effect devices
    • H01L29/41733Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45Ohmic electrodes
    • H01L29/456Ohmic electrodes on silicon
    • H01L29/458Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

Abstract

PURPOSE:To improve insulation between a gate and a source by forming a source electrode on a gate electrode so as not to superpose on the edge of the gate electrode. CONSTITUTION:Source wirings 11 are partly formed in double wirings 11a, 11b. A thin film transistor TFT is formed of one 11b of the double wirings and a branch 12a formed on a gate wiring 12. In other words, wirings 11a, 11b are extended in parallel without superposing on the edge 12b with one edge 12b of the branch 12a of the wiring 12 disposed therebetween. With the thus construction, it can suppress the leakage between the gate and the source, thereby improve the yield of the TFT.
JP23965384A 1984-11-13 1984-11-13 Thin film transistor Pending JPS61116871A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23965384A JPS61116871A (en) 1984-11-13 1984-11-13 Thin film transistor

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP23965384A JPS61116871A (en) 1984-11-13 1984-11-13 Thin film transistor
GB8527474A GB2169746B (en) 1984-11-13 1985-11-07 Thin film transistor
DE19853539794 DE3539794C2 (en) 1984-11-13 1985-11-09
US07235728 US4843438A (en) 1984-11-13 1988-08-19 Thin film transistor
US07304278 US4918494A (en) 1984-11-13 1989-01-31 Thin film transistor

Publications (1)

Publication Number Publication Date
JPS61116871A true true JPS61116871A (en) 1986-06-04

Family

ID=17047900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23965384A Pending JPS61116871A (en) 1984-11-13 1984-11-13 Thin film transistor

Country Status (1)

Country Link
JP (1) JPS61116871A (en)

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